JP2014521992A - 受動光学構成要素の製造方法および受動光学構成要素を備えるデバイス - Google Patents

受動光学構成要素の製造方法および受動光学構成要素を備えるデバイス Download PDF

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Publication number
JP2014521992A
JP2014521992A JP2014520486A JP2014520486A JP2014521992A JP 2014521992 A JP2014521992 A JP 2014521992A JP 2014520486 A JP2014520486 A JP 2014520486A JP 2014520486 A JP2014520486 A JP 2014520486A JP 2014521992 A JP2014521992 A JP 2014521992A
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JP
Japan
Prior art keywords
transparent
wafer
optical
passive optical
optical component
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Pending
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JP2014520486A
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English (en)
Japanese (ja)
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JP2014521992A5 (https=
Inventor
ラドマン，ハルトムート
ウェステンホーファー，ズザンネ
テサノビク，ボージャン
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Ams Sensors Singapore Pte Ltd
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Heptagon Micro Optics Pte Ltd
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Application filed by Heptagon Micro Optics Pte Ltd filed Critical Heptagon Micro Optics Pte Ltd
Publication of JP2014521992A publication Critical patent/JP2014521992A/ja
Publication of JP2014521992A5 publication Critical patent/JP2014521992A5/ja
Pending legal-status Critical Current

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    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B3/00—Simple or compound lenses
    • G02B3/0006—Arrays
    • G02B3/0012—Arrays characterised by the manufacturing method
    • G02B3/0031—Replication or moulding, e.g. hot embossing, UV-casting, injection moulding
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29D—PRODUCING PARTICULAR ARTICLES FROM PLASTICS OR FROM SUBSTANCES IN A PLASTIC STATE
    • B29D11/00—Producing optical elements, e.g. lenses or prisms
    • B29D11/00009—Production of simple or compound lenses
    • B29D11/00278—Lenticular sheets
    • B29D11/00307—Producing lens wafers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29D—PRODUCING PARTICULAR ARTICLES FROM PLASTICS OR FROM SUBSTANCES IN A PLASTIC STATE
    • B29D11/00—Producing optical elements, e.g. lenses or prisms
    • B29D11/00009—Production of simple or compound lenses
    • B29D11/00365—Production of microlenses
    • B29D11/00375—Production of microlenses by moulding lenses in holes through a substrate
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29D—PRODUCING PARTICULAR ARTICLES FROM PLASTICS OR FROM SUBSTANCES IN A PLASTIC STATE
    • B29D11/00—Producing optical elements, e.g. lenses or prisms
    • B29D11/0074—Production of other optical elements not provided for in B29D11/00009- B29D11/0073
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29D—PRODUCING PARTICULAR ARTICLES FROM PLASTICS OR FROM SUBSTANCES IN A PLASTIC STATE
    • B29D11/00—Producing optical elements, e.g. lenses or prisms
    • B29D11/00932—Combined cutting and grinding thereof
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B13/00—Optical objectives specially designed for the purposes specified below
    • G02B13/001—Miniaturised objectives for electronic devices, e.g. portable telephones, webcams, PDAs, small digital cameras
    • G02B13/0085—Miniaturised objectives for electronic devices, e.g. portable telephones, webcams, PDAs, small digital cameras employing wafer level optics
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B3/00—Simple or compound lenses
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/20—Filters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/024—Manufacture or treatment of image sensors covered by group H10F39/12 of coatings or optical elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29K—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES B29B, B29C OR B29D, RELATING TO MOULDING MATERIALS OR TO MATERIALS FOR MOULDS, REINFORCEMENTS, FILLERS OR PREFORMED PARTS, e.g. INSERTS
    • B29K2063/00—Use of EP, i.e. epoxy resins or derivatives thereof, as moulding material
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29L—INDEXING SCHEME ASSOCIATED WITH SUBCLASS B29C, RELATING TO PARTICULAR ARTICLES
    • B29L2011/00—Optical elements, e.g. lenses, prisms
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/804—Containers or encapsulations

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Ophthalmology & Optometry (AREA)
  • Mechanical Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Optical Elements Other Than Lenses (AREA)
  • Light Receiving Elements (AREA)
  • Casting Or Compression Moulding Of Plastics Or The Like (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Optical Integrated Circuits (AREA)
  • Led Device Packages (AREA)
JP2014520486A 2011-07-19 2012-07-10 受動光学構成要素の製造方法および受動光学構成要素を備えるデバイス Pending JP2014521992A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201161509357P 2011-07-19 2011-07-19
US61/509,357 2011-07-19
PCT/CH2012/000160 WO2013010285A1 (en) 2011-07-19 2012-07-10 Method for manufacturing passive optical components, and devices comprising the same

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2017042941A Division JP6763807B2 (ja) 2011-07-19 2017-03-07 受動光学構成要素の製造方法および受動光学構成要素を備えるデバイス

Publications (2)

Publication Number Publication Date
JP2014521992A true JP2014521992A (ja) 2014-08-28
JP2014521992A5 JP2014521992A5 (https=) 2015-08-13

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JP2014520486A Pending JP2014521992A (ja) 2011-07-19 2012-07-10 受動光学構成要素の製造方法および受動光学構成要素を備えるデバイス
JP2017042941A Active JP6763807B2 (ja) 2011-07-19 2017-03-07 受動光学構成要素の製造方法および受動光学構成要素を備えるデバイス

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Country Status (8)

Country Link
US (4) US8767303B2 (https=)
EP (1) EP2735029B1 (https=)
JP (2) JP2014521992A (https=)
KR (1) KR101966478B1 (https=)
CN (1) CN103975436B (https=)
SG (1) SG10201605834YA (https=)
TW (3) TWI647825B (https=)
WO (1) WO2013010285A1 (https=)

Cited By (3)

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JP2014521226A (ja) * 2011-07-19 2014-08-25 ヘプタゴン・マイクロ・オプティクス・プライベート・リミテッド 光電子モジュール、光電子モジュールの製造方法、ならびに光電子モジュールを備える機器およびデバイス
JP2017022200A (ja) * 2015-07-08 2017-01-26 ソニーセミコンダクタソリューションズ株式会社 イメージセンサ、および電子機器
JP2017143211A (ja) * 2016-02-12 2017-08-17 凸版印刷株式会社 固体撮像素子及びその製造方法

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WO2013020238A1 (en) * 2011-08-10 2013-02-14 Heptagon Micro Optics Pte. Ltd. Opto-electronic module and method for manufacturing the same
CN107425030B (zh) 2012-08-20 2020-11-06 赫普塔冈微光有限公司 光学晶片的制造
EP2827368B1 (en) * 2013-07-19 2019-06-05 ams AG Package for an optical sensor, optical sensor arrangement and method of producing a package for an optical sensor
WO2015016772A1 (en) 2013-07-31 2015-02-05 Heptagon Micro Optics Pte. Ltd. Micro-optical orientation sensor and related methods
NL2011843C2 (en) 2013-11-26 2015-05-27 Anteryon Wafer Optics B V A method for manufacturing an optical assembly.
US9711552B2 (en) * 2014-08-19 2017-07-18 Heptagon Micro Optics Pte. Ltd. Optoelectronic modules having a silicon substrate, and fabrication methods for such modules
US9829614B2 (en) 2015-02-02 2017-11-28 Synaptics Incorporated Optical sensor using collimator
US20160307881A1 (en) * 2015-04-20 2016-10-20 Advanced Semiconductor Engineering, Inc. Optical sensor module and method for manufacturing the same
WO2016208403A1 (ja) * 2015-06-23 2016-12-29 ソニー株式会社 イメージセンサ、および電子機器
JP2018537845A (ja) * 2015-10-07 2018-12-20 シナプティクス インコーポレイテッド 指紋感知用イメージセンサ構造
KR101738883B1 (ko) * 2016-01-06 2017-05-23 한국과학기술원 초박형 디지털 카메라 및 그 제조 방법
SG11201602031TA (en) * 2016-03-08 2017-10-30 Tnc Optics & Tech Pte Ltd A fabrication method of optical sensor cover having a lens
DE112020000917T5 (de) 2019-02-25 2021-11-04 Ams Sensors Singapore Pte. Ltd. Herstellung von optischen diffusoren und optische diffusoren
US10734184B1 (en) 2019-06-21 2020-08-04 Elbit Systems Of America, Llc Wafer scale image intensifier

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Publication number Priority date Publication date Assignee Title
JP2014521226A (ja) * 2011-07-19 2014-08-25 ヘプタゴン・マイクロ・オプティクス・プライベート・リミテッド 光電子モジュール、光電子モジュールの製造方法、ならびに光電子モジュールを備える機器およびデバイス
JP2017022200A (ja) * 2015-07-08 2017-01-26 ソニーセミコンダクタソリューションズ株式会社 イメージセンサ、および電子機器
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Also Published As

Publication number Publication date
US20140347747A1 (en) 2014-11-27
WO2013010285A1 (en) 2013-01-24
TW201310626A (zh) 2013-03-01
JP6763807B2 (ja) 2020-09-30
TWI647825B (zh) 2019-01-11
CN103975436B (zh) 2019-05-10
EP2735029B1 (en) 2022-12-21
US8767303B2 (en) 2014-07-01
KR101966478B1 (ko) 2019-04-05
JP2017167533A (ja) 2017-09-21
TWI635601B (zh) 2018-09-11
SG10201605834YA (en) 2016-09-29
US9610743B2 (en) 2017-04-04
US10527762B2 (en) 2020-01-07
US20170235026A1 (en) 2017-08-17
EP2735029A1 (en) 2014-05-28
TW201820597A (zh) 2018-06-01
CN103975436A (zh) 2014-08-06
TW201742238A (zh) 2017-12-01
US20130033767A1 (en) 2013-02-07
KR20140054081A (ko) 2014-05-08
US20160031169A1 (en) 2016-02-04
US9193120B2 (en) 2015-11-24
TWI647824B (zh) 2019-01-11

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