JP2014512703A5 - - Google Patents

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Publication number
JP2014512703A5
JP2014512703A5 JP2014508363A JP2014508363A JP2014512703A5 JP 2014512703 A5 JP2014512703 A5 JP 2014512703A5 JP 2014508363 A JP2014508363 A JP 2014508363A JP 2014508363 A JP2014508363 A JP 2014508363A JP 2014512703 A5 JP2014512703 A5 JP 2014512703A5
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JP
Japan
Prior art keywords
solar cell
advantageously
group
group iii
depositing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2014508363A
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English (en)
Japanese (ja)
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JP2014512703A (ja
Filing date
Publication date
Priority claimed from US13/098,122 external-priority patent/US20120273042A1/en
Application filed filed Critical
Publication of JP2014512703A publication Critical patent/JP2014512703A/ja
Publication of JP2014512703A5 publication Critical patent/JP2014512703A5/ja
Withdrawn legal-status Critical Current

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JP2014508363A 2011-04-29 2012-03-28 太陽電池構造におけるトンネル接合の品質を改善するための方法 Withdrawn JP2014512703A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US13/098,122 US20120273042A1 (en) 2011-04-29 2011-04-29 Method for improving the quality of a tunnel junction in a solar cell structure
US13/098,122 2011-04-29
PCT/US2012/030983 WO2012148618A1 (en) 2011-04-29 2012-03-28 A method for improving the quality of a tunnel junction in a solar cell structure

Publications (2)

Publication Number Publication Date
JP2014512703A JP2014512703A (ja) 2014-05-22
JP2014512703A5 true JP2014512703A5 (https=) 2015-05-14

Family

ID=45932551

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2014508363A Withdrawn JP2014512703A (ja) 2011-04-29 2012-03-28 太陽電池構造におけるトンネル接合の品質を改善するための方法

Country Status (6)

Country Link
US (1) US20120273042A1 (https=)
EP (1) EP2702617A1 (https=)
JP (1) JP2014512703A (https=)
CN (1) CN103503167B (https=)
RU (1) RU2604476C2 (https=)
WO (1) WO2012148618A1 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106098818A (zh) * 2016-08-26 2016-11-09 扬州乾照光电有限公司 一种锗基砷化镓多结柔性薄膜太阳电池及其制备方法
US10593818B2 (en) * 2016-12-09 2020-03-17 The Boeing Company Multijunction solar cell having patterned emitter and method of making the solar cell

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6437060A (en) * 1987-08-03 1989-02-07 Nippon Telegraph & Telephone Semiconductor element
JPH03235372A (ja) * 1990-02-10 1991-10-21 Sumitomo Electric Ind Ltd 超高効率太陽電池
JPH05201792A (ja) * 1992-01-27 1993-08-10 Hitachi Ltd 薄膜結晶製造装置
JPH08162659A (ja) * 1994-12-06 1996-06-21 Japan Energy Corp 太陽電池
JPH0964386A (ja) * 1995-08-18 1997-03-07 Japan Energy Corp 多接合太陽電池
JPH1012905A (ja) * 1996-06-27 1998-01-16 Hitachi Ltd 太陽電池及びその製造方法
JPH1074968A (ja) * 1996-09-02 1998-03-17 Nippon Telegr & Teleph Corp <Ntt> 太陽電池およびその製造方法
US5944913A (en) * 1997-11-26 1999-08-31 Sandia Corporation High-efficiency solar cell and method for fabrication
US6380601B1 (en) * 1999-03-29 2002-04-30 Hughes Electronics Corporation Multilayer semiconductor structure with phosphide-passivated germanium substrate
US6252287B1 (en) * 1999-05-19 2001-06-26 Sandia Corporation InGaAsN/GaAs heterojunction for multi-junction solar cells
JP2001111074A (ja) * 1999-08-03 2001-04-20 Fuji Xerox Co Ltd 半導体素子及び太陽電池
AU2001297613A1 (en) * 2001-11-08 2003-06-10 Midwest Research Institute Reactive codoping of gaalinp compound semiconductors
US7122733B2 (en) * 2002-09-06 2006-10-17 The Boeing Company Multi-junction photovoltaic cell having buffer layers for the growth of single crystal boron compounds
US7071407B2 (en) * 2002-10-31 2006-07-04 Emcore Corporation Method and apparatus of multiplejunction solar cell structure with high band gap heterojunction middle cell
US7812249B2 (en) * 2003-04-14 2010-10-12 The Boeing Company Multijunction photovoltaic cell grown on high-miscut-angle substrate
RU2308122C1 (ru) * 2006-06-05 2007-10-10 Институт физики полупроводников Сибирского отделения Российской академии наук Каскадный солнечный элемент
CN101373798B (zh) * 2007-08-22 2010-07-21 中国科学院半导体研究所 倒装双结铟镓氮太阳能电池结构
RU2382439C1 (ru) * 2008-06-05 2010-02-20 Общество с ограниченной ответственностью "Национальная инновационная компания "Новые энергетические проекты" (ООО "Национальная инновационная компания "НЭП") Каскадный фотопреобразователь и способ его изготовления

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