CN103503167B - 提高太阳能电池结构中的隧道结的质量的方法 - Google Patents

提高太阳能电池结构中的隧道结的质量的方法 Download PDF

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Publication number
CN103503167B
CN103503167B CN201280020993.8A CN201280020993A CN103503167B CN 103503167 B CN103503167 B CN 103503167B CN 201280020993 A CN201280020993 A CN 201280020993A CN 103503167 B CN103503167 B CN 103503167B
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China
Prior art keywords
tunnel knot
solaode
deposition
solar cell
solar battery
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CN201280020993.8A
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English (en)
Chinese (zh)
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CN103503167A (zh
Inventor
X-Q·刘
C·M·费策尔
D·C·罗
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Boeing Co
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Boeing Co
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
    • H10F10/142—Photovoltaic cells having only PN homojunction potential barriers comprising multiple PN homojunctions, e.g. tandem cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/127—The active layers comprising only Group III-V materials, e.g. GaAs or InP
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/127—The active layers comprising only Group III-V materials, e.g. GaAs or InP
    • H10F71/1272—The active layers comprising only Group III-V materials, e.g. GaAs or InP comprising at least three elements, e.g. GaAlAs or InGaAsP
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/544—Solar cells from Group III-V materials

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  • Photovoltaic Devices (AREA)
CN201280020993.8A 2011-04-29 2012-03-28 提高太阳能电池结构中的隧道结的质量的方法 Active CN103503167B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US13/098,122 US20120273042A1 (en) 2011-04-29 2011-04-29 Method for improving the quality of a tunnel junction in a solar cell structure
US13/098,122 2011-04-29
PCT/US2012/030983 WO2012148618A1 (en) 2011-04-29 2012-03-28 A method for improving the quality of a tunnel junction in a solar cell structure

Publications (2)

Publication Number Publication Date
CN103503167A CN103503167A (zh) 2014-01-08
CN103503167B true CN103503167B (zh) 2016-09-14

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CN201280020993.8A Active CN103503167B (zh) 2011-04-29 2012-03-28 提高太阳能电池结构中的隧道结的质量的方法

Country Status (6)

Country Link
US (1) US20120273042A1 (https=)
EP (1) EP2702617A1 (https=)
JP (1) JP2014512703A (https=)
CN (1) CN103503167B (https=)
RU (1) RU2604476C2 (https=)
WO (1) WO2012148618A1 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106098818A (zh) * 2016-08-26 2016-11-09 扬州乾照光电有限公司 一种锗基砷化镓多结柔性薄膜太阳电池及其制备方法
US10593818B2 (en) * 2016-12-09 2020-03-17 The Boeing Company Multijunction solar cell having patterned emitter and method of making the solar cell

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6380601B1 (en) * 1999-03-29 2002-04-30 Hughes Electronics Corporation Multilayer semiconductor structure with phosphide-passivated germanium substrate
US20040045598A1 (en) * 2002-09-06 2004-03-11 The Boeing Company Multi-junction photovoltaic cell having buffer layers for the growth of single crystal boron compounds
CN101373798A (zh) * 2007-08-22 2009-02-25 中国科学院半导体研究所 倒装双结铟镓氮太阳能电池结构

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6437060A (en) * 1987-08-03 1989-02-07 Nippon Telegraph & Telephone Semiconductor element
JPH03235372A (ja) * 1990-02-10 1991-10-21 Sumitomo Electric Ind Ltd 超高効率太陽電池
JPH05201792A (ja) * 1992-01-27 1993-08-10 Hitachi Ltd 薄膜結晶製造装置
JPH08162659A (ja) * 1994-12-06 1996-06-21 Japan Energy Corp 太陽電池
JPH0964386A (ja) * 1995-08-18 1997-03-07 Japan Energy Corp 多接合太陽電池
JPH1012905A (ja) * 1996-06-27 1998-01-16 Hitachi Ltd 太陽電池及びその製造方法
JPH1074968A (ja) * 1996-09-02 1998-03-17 Nippon Telegr & Teleph Corp <Ntt> 太陽電池およびその製造方法
US5944913A (en) * 1997-11-26 1999-08-31 Sandia Corporation High-efficiency solar cell and method for fabrication
US6252287B1 (en) * 1999-05-19 2001-06-26 Sandia Corporation InGaAsN/GaAs heterojunction for multi-junction solar cells
JP2001111074A (ja) * 1999-08-03 2001-04-20 Fuji Xerox Co Ltd 半導体素子及び太陽電池
AU2001297613A1 (en) * 2001-11-08 2003-06-10 Midwest Research Institute Reactive codoping of gaalinp compound semiconductors
US7071407B2 (en) * 2002-10-31 2006-07-04 Emcore Corporation Method and apparatus of multiplejunction solar cell structure with high band gap heterojunction middle cell
US7812249B2 (en) * 2003-04-14 2010-10-12 The Boeing Company Multijunction photovoltaic cell grown on high-miscut-angle substrate
RU2308122C1 (ru) * 2006-06-05 2007-10-10 Институт физики полупроводников Сибирского отделения Российской академии наук Каскадный солнечный элемент
RU2382439C1 (ru) * 2008-06-05 2010-02-20 Общество с ограниченной ответственностью "Национальная инновационная компания "Новые энергетические проекты" (ООО "Национальная инновационная компания "НЭП") Каскадный фотопреобразователь и способ его изготовления

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6380601B1 (en) * 1999-03-29 2002-04-30 Hughes Electronics Corporation Multilayer semiconductor structure with phosphide-passivated germanium substrate
US20040045598A1 (en) * 2002-09-06 2004-03-11 The Boeing Company Multi-junction photovoltaic cell having buffer layers for the growth of single crystal boron compounds
CN101373798A (zh) * 2007-08-22 2009-02-25 中国科学院半导体研究所 倒装双结铟镓氮太阳能电池结构

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
Optical properties of GaAs/GaNxAs1-x quantum well structures grown by migration-enhanced epitaxy;Y.G. Hong, et al.;《JOURNAL OF CRYSTAL GROWTH》;20020831;第242卷(第1-2期);第29页左列第1段至第34页左列第2段，图1 *

Also Published As

Publication number Publication date
JP2014512703A (ja) 2014-05-22
US20120273042A1 (en) 2012-11-01
RU2604476C2 (ru) 2016-12-10
WO2012148618A1 (en) 2012-11-01
CN103503167A (zh) 2014-01-08
RU2013152841A (ru) 2015-06-10
EP2702617A1 (en) 2014-03-05

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