JP2014506397A - 2段階での均一なドライエッチング - Google Patents
2段階での均一なドライエッチング Download PDFInfo
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- JP2014506397A JP2014506397A JP2013544712A JP2013544712A JP2014506397A JP 2014506397 A JP2014506397 A JP 2014506397A JP 2013544712 A JP2013544712 A JP 2013544712A JP 2013544712 A JP2013544712 A JP 2013544712A JP 2014506397 A JP2014506397 A JP 2014506397A
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- 238000001312 dry etching Methods 0.000 title claims abstract description 70
- 238000000034 method Methods 0.000 claims abstract description 96
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 59
- 229910052814 silicon oxide Inorganic materials 0.000 claims abstract description 59
- 239000007787 solid Substances 0.000 claims abstract description 47
- 238000005530 etching Methods 0.000 claims abstract description 27
- 239000000758 substrate Substances 0.000 claims description 66
- 238000012545 processing Methods 0.000 claims description 65
- 239000006227 byproduct Substances 0.000 claims description 26
- 239000002243 precursor Substances 0.000 claims description 21
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 14
- 229910052731 fluorine Inorganic materials 0.000 claims description 13
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 12
- 239000011737 fluorine Substances 0.000 claims description 12
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims description 11
- 239000001257 hydrogen Substances 0.000 claims description 11
- 229910052739 hydrogen Inorganic materials 0.000 claims description 11
- 229910021529 ammonia Inorganic materials 0.000 claims description 7
- QKCGXXHCELUCKW-UHFFFAOYSA-N n-[4-[4-(dinaphthalen-2-ylamino)phenyl]phenyl]-n-naphthalen-2-ylnaphthalen-2-amine Chemical compound C1=CC=CC2=CC(N(C=3C=CC(=CC=3)C=3C=CC(=CC=3)N(C=3C=C4C=CC=CC4=CC=3)C=3C=C4C=CC=CC4=CC=3)C3=CC4=CC=CC=C4C=C3)=CC=C21 QKCGXXHCELUCKW-UHFFFAOYSA-N 0.000 claims description 7
- 229930195733 hydrocarbon Natural products 0.000 claims description 6
- 150000002430 hydrocarbons Chemical class 0.000 claims description 6
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 2
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 claims description 2
- YZCKVEUIGOORGS-UHFFFAOYSA-N Hydrogen atom Chemical compound [H] YZCKVEUIGOORGS-UHFFFAOYSA-N 0.000 claims description 2
- 229910000040 hydrogen fluoride Inorganic materials 0.000 claims description 2
- 239000004215 Carbon black (E152) Substances 0.000 claims 1
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- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 3
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 3
- 238000004891 communication Methods 0.000 description 3
- 239000003989 dielectric material Substances 0.000 description 3
- 230000006870 function Effects 0.000 description 3
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- 238000010926 purge Methods 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000004913 activation Effects 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000000231 atomic layer deposition Methods 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
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- 229910052760 oxygen Inorganic materials 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 239000000047 product Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910017855 NH 4 F Inorganic materials 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- 235000014548 Rubus moluccanus Nutrition 0.000 description 1
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- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- WYEMLYFITZORAB-UHFFFAOYSA-N boscalid Chemical compound C1=CC(Cl)=CC=C1C1=CC=CC=C1NC(=O)C1=CC=CN=C1Cl WYEMLYFITZORAB-UHFFFAOYSA-N 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 239000003638 chemical reducing agent Substances 0.000 description 1
- 238000009833 condensation Methods 0.000 description 1
- 230000005494 condensation Effects 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 239000002826 coolant Substances 0.000 description 1
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- 229910001873 dinitrogen Inorganic materials 0.000 description 1
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- 125000001153 fluoro group Chemical group F* 0.000 description 1
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- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical group 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
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- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000007800 oxidant agent Substances 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
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- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 238000005092 sublimation method Methods 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 1
- 210000003813 thumb Anatomy 0.000 description 1
- 238000013022 venting Methods 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
- H01L21/31116—Etching inorganic layers by chemical means by dry-etching
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- Chemical & Material Sciences (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Inorganic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Plasma & Fusion (AREA)
- Drying Of Semiconductors (AREA)
Abstract
Description
本出願は、本明細書に全体を参照として組み込む2010年12月14日出願の米国仮特許出願第61/422,942号の利益を主張するものである。
図4は、本発明の実施形態を実施することができる例示的な処理チャンバ400を示す部分断面図である。一般に、水素含有前駆体とフッ素含有前駆体を、1つまたは複数の開孔451を通して遠隔プラズマ領域461〜463内に導入し、プラズマ出力源446によって励起することができる。
Claims (15)
- 基板処理チャンバの基板処理領域内で、パターン形成された基板の表面上の複数のトレンチから酸化ケイ素をエッチングする方法であって、
第1のドライエッチング段階で、前記複数のトレンチそれぞれにおいて前記酸化ケイ素をドライエッチングし、前記複数のトレンチ内の残った酸化ケイ素の表面上に第1の固体副生成物を生成するステップであって、前記第1のドライエッチング段階中に前記酸化ケイ素が第1のエッチング速度で除去されるステップと、
第2のドライエッチング段階で、前記複数のトレンチそれぞれにおいて前記酸化ケイ素をドライエッチングし、前記複数のトレンチ内の残った酸化ケイ素の表面上に第2の固体副生成物を生成するステップであって、前記第2のドライエッチング段階中の前記酸化ケイ素の第2のエッチング速度が、前記第1のエッチング速度未満であるステップと、
前記複数のトレンチから前記第1および第2の固体副生成物を昇華させるステップと
を含む方法。 - 前記第1の固体副生成物が、前記第1のドライエッチング段階と前記第2のドライエッチング段階の間では昇華されない請求項1に記載の方法。
- 前記第1のドライエッチング段階と前記第2のドライエッチング段階の間に本質的に遅延がない請求項1に記載の方法。
- 前記複数のトレンチそれぞれの幅が35nm未満である請求項1に記載の方法。
- 前記第1のドライエッチング段階の期間が、前記第2のドライエッチング段階の期間よりも長い請求項1に記載の方法。
- 前記第1のドライエッチング段階の期間が、約15秒〜約1分の間である請求項1に記載の方法。
- 前記第2のドライエッチング段階の期間が、約5秒〜約30秒の間である請求項1に記載の方法。
- 前記酸化ケイ素が、前記第1および第2のドライエッチング段階中に60℃未満で維持される請求項1に記載の方法。
- 前記酸化ケイ素が、前記複数のトレンチから前記第1および第2の固体副生成物を昇華させる操作中に、90℃よりも高い温度に上昇する請求項1に記載の方法。
- 前記第1のエッチング速度が、前記第2のエッチング速度の約2倍よりも大きい請求項1に記載の方法。
- 前記第1のエッチング速度が、前記第2のエッチング速度の約5倍よりも大きい請求項1に記載の方法。
- 前記第1のドライエッチング段階の前記ドライエッチングが、約1分以下で自己制限的になり、前記第2のドライエッチング段階の前記ドライエッチングが、約2分以上で自己制限的になる請求項1に記載の方法。
- 前記ドライエッチング操作がそれぞれ、
プラズマ流を生成するために、前記基板処理領域に流体結合された遠隔プラズマ領域内にフッ素含有前駆体と水素含有前駆体を流すと共に、前記遠隔プラズマ領域内でプラズマを発生させること
を含む請求項1に記載の方法。 - 前記水素含有前駆体が、原子水素、分子水素、アンモニア、炭化水素、および不完全にハロゲン置換された炭化水素からなる群から選択される少なくとも1つの前駆体を含む請求項13に記載の方法。
- 前記フッ素含有前駆体が、三フッ化窒素、フッ化水素、二原子フッ素、単原子フッ素、およびフッ素置換炭化水素からなる群から選択される少なくとも1つの前駆体を含む請求項13に記載の方法。
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US42294210P | 2010-12-14 | 2010-12-14 | |
US61/422,942 | 2010-12-14 | ||
US13/197,487 | 2011-08-03 | ||
US13/197,487 US8741778B2 (en) | 2010-12-14 | 2011-08-03 | Uniform dry etch in two stages |
PCT/US2011/064724 WO2012106033A2 (en) | 2010-12-14 | 2011-12-13 | Uniform dry etch in two stages |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2014506397A true JP2014506397A (ja) | 2014-03-13 |
JP5925802B2 JP5925802B2 (ja) | 2016-05-25 |
Family
ID=46577711
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2013544712A Active JP5925802B2 (ja) | 2010-12-14 | 2011-12-13 | 2段階での均一なドライエッチング |
Country Status (7)
Country | Link |
---|---|
US (1) | US8741778B2 (ja) |
JP (1) | JP5925802B2 (ja) |
KR (1) | KR101931134B1 (ja) |
CN (1) | CN103210478B (ja) |
SG (1) | SG189944A1 (ja) |
TW (1) | TWI541889B (ja) |
WO (1) | WO2012106033A2 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2017028264A (ja) * | 2015-07-23 | 2017-02-02 | ピーエスケー インコーポレイテッド | 基板処理装置及び基板処理方法 |
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