JP2014505322A5 - - Google Patents
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- Publication number
- JP2014505322A5 JP2014505322A5 JP2013542066A JP2013542066A JP2014505322A5 JP 2014505322 A5 JP2014505322 A5 JP 2014505322A5 JP 2013542066 A JP2013542066 A JP 2013542066A JP 2013542066 A JP2013542066 A JP 2013542066A JP 2014505322 A5 JP2014505322 A5 JP 2014505322A5
- Authority
- JP
- Japan
- Prior art keywords
- dopant source
- source gas
- gas
- ion implantation
- container
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000007789 gas Substances 0.000 claims description 95
- 239000002019 doping agent Substances 0.000 claims description 62
- 239000011261 inert gas Substances 0.000 claims description 2
- 238000005468 ion implantation Methods 0.000 claims 22
- 238000009826 distribution Methods 0.000 claims 8
- 238000000034 method Methods 0.000 claims 8
- 238000003860 storage Methods 0.000 claims 8
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 claims 4
- 239000003463 adsorbent Substances 0.000 claims 4
- WTEOIRVLGSZEPR-UHFFFAOYSA-N boron trifluoride Chemical compound FB(F)F WTEOIRVLGSZEPR-UHFFFAOYSA-N 0.000 claims 4
- 238000001179 sorption measurement Methods 0.000 claims 4
- 229910015900 BF3 Inorganic materials 0.000 claims 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims 2
- RBFQJDQYXXHULB-UHFFFAOYSA-N arsane Chemical compound [AsH3] RBFQJDQYXXHULB-UHFFFAOYSA-N 0.000 claims 2
- 239000011810 insulating material Substances 0.000 claims 2
- 229910000073 phosphorus hydride Inorganic materials 0.000 claims 2
- 238000010926 purge Methods 0.000 claims 2
- 229910000077 silane Inorganic materials 0.000 claims 2
- 230000004913 activation Effects 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 claims 1
- -1 polytetrafluoroethylene Polymers 0.000 claims 1
- 229920001343 polytetrafluoroethylene Polymers 0.000 claims 1
- 239000004810 polytetrafluoroethylene Substances 0.000 claims 1
- 230000001105 regulatory effect Effects 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 claims 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US41840210P | 2010-11-30 | 2010-11-30 | |
| US61/418,402 | 2010-11-30 | ||
| PCT/US2011/062168 WO2012074889A2 (en) | 2010-11-30 | 2011-11-26 | Ion implanter system including remote dopant source, and method comprising same |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2014505322A JP2014505322A (ja) | 2014-02-27 |
| JP2014505322A5 true JP2014505322A5 (enExample) | 2018-05-24 |
| JP6355336B2 JP6355336B2 (ja) | 2018-07-11 |
Family
ID=46172480
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2013542066A Active JP6355336B2 (ja) | 2010-11-30 | 2011-11-26 | 遠隔ドーパント源を含むイオン注入機システム及び当該イオン注入機システムを備える方法 |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US20130251913A1 (enExample) |
| EP (1) | EP2647036B1 (enExample) |
| JP (1) | JP6355336B2 (enExample) |
| KR (1) | KR101953401B1 (enExample) |
| CN (1) | CN103329252B (enExample) |
| SG (2) | SG10201509808WA (enExample) |
| TW (1) | TWI557771B (enExample) |
| WO (1) | WO2012074889A2 (enExample) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW201530041A (zh) * | 2013-10-11 | 2015-08-01 | Applied Materials Inc | 促進對於多腔室的系統單點連接之緊密危險性氣體線分配 |
| JP6385708B2 (ja) | 2014-04-18 | 2018-09-05 | 日立ジョンソンコントロールズ空調株式会社 | スクリュー圧縮機 |
| US10229840B2 (en) * | 2014-10-30 | 2019-03-12 | Entegris, Inc. | Ion implanter comprising integrated ventilation system |
| SG11201706560PA (en) | 2015-02-12 | 2017-09-28 | Entegris Inc | Smart package |
| CN109196617B (zh) * | 2016-05-13 | 2021-02-12 | 恩特格里斯公司 | 于氮离子植入中改善离子源效能的氟化组合物 |
| TWI693656B (zh) * | 2019-04-25 | 2020-05-11 | 晨碩國際有限公司 | 離子佈植機用之供氣系統 |
| JP7255952B2 (ja) * | 2019-06-20 | 2023-04-11 | 直嗣 山本 | イオンビーム源 |
| JP7449747B2 (ja) * | 2020-03-30 | 2024-03-14 | 住友重機械工業株式会社 | イオン源ガス配管構造およびイオン源ガス配管システム |
| US11527380B2 (en) | 2020-04-01 | 2022-12-13 | Taiwan Semiconductor Manufacturing Co., Ltd. | Ion implanter toxic gas delivery system |
| US11569062B2 (en) * | 2020-05-22 | 2023-01-31 | Taiwan Semiconductor Manufacturing Co., Ltd. | Gas delivery system for ion implanter |
| WO2025058838A1 (en) * | 2023-09-12 | 2025-03-20 | Lam Research Corporation | Prevention of atmosphere exposure in gas delivery system |
Family Cites Families (23)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6298543A (ja) * | 1985-10-24 | 1987-05-08 | Sony Corp | イオンビ−ム発生装置 |
| FR2633143B1 (fr) * | 1988-06-21 | 1990-10-12 | Eferel Sa | Procede et dispositif pour l'alimentation, en gaz de traitement, d'un reacteur situe dans une zone soumise a des champs electriques et/ou electromagnetiques intenses |
| US5518528A (en) * | 1994-10-13 | 1996-05-21 | Advanced Technology Materials, Inc. | Storage and delivery system for gaseous hydride, halide, and organometallic group V compounds |
| US5980608A (en) * | 1998-01-07 | 1999-11-09 | Advanced Technology Materials, Inc. | Throughflow gas storage and dispensing system |
| US6500238B1 (en) * | 2000-08-10 | 2002-12-31 | Advanced Technology Materials, Inc. | Fluid storage and dispensing system |
| US6515290B1 (en) * | 2000-09-05 | 2003-02-04 | Axcelis Technologies, Inc. | Bulk gas delivery system for ion implanters |
| JP4866534B2 (ja) * | 2001-02-12 | 2012-02-01 | エーエスエム アメリカ インコーポレイテッド | 半導体膜の改良された堆積方法 |
| US6857447B2 (en) | 2002-06-10 | 2005-02-22 | Advanced Technology Materials, Inc. | Pressure-based gas delivery system and method for reducing risks associated with storage and delivery of high pressure gases |
| US6717079B2 (en) * | 2002-06-21 | 2004-04-06 | Varian Semiconductr Equipmentassociates, Inc. | Electrical switches and methods of establishing an electrical connection |
| JP3971965B2 (ja) * | 2002-07-04 | 2007-09-05 | 株式会社神戸製鋼所 | イオン源への材料ガスの供給方法及びその装置 |
| US6770117B2 (en) * | 2002-10-31 | 2004-08-03 | Advanced Technology Materials, Inc. | Ion implantation and wet bench systems utilizing exhaust gas recirculation |
| WO2005060602A2 (en) * | 2003-12-12 | 2005-07-07 | Semequip, Inc. | Controlling the flow of vapors sublimated from solids |
| US7955797B2 (en) * | 2004-10-25 | 2011-06-07 | Advanced Technology Materials, Inc. | Fluid storage and dispensing system including dynamic fluid monitoring of fluid storage and dispensing vessel |
| DE102004052580B4 (de) * | 2004-10-29 | 2008-09-25 | Advanced Micro Devices, Inc., Sunnyvale | Vorrichtung und Verfahren zum Zuführen von Vorstufengasen zu einer Implantationsanlage |
| CN101213008B (zh) * | 2005-05-03 | 2011-09-28 | 高级技术材料公司 | 流体储存和分配系统以及包含该系统的流体供应方法 |
| KR20080041285A (ko) * | 2005-08-30 | 2008-05-09 | 어드밴스드 테크놀러지 머티리얼즈, 인코포레이티드 | 저압 가스 이송 장치 및 방법 |
| JP5105775B2 (ja) * | 2006-06-05 | 2012-12-26 | キヤノン株式会社 | 絶縁配管、プラズマ処理装置及び方法 |
| US7775236B2 (en) * | 2007-02-26 | 2010-08-17 | Applied Materials, Inc. | Method and apparatus for controlling gas flow to a processing chamber |
| KR100855002B1 (ko) * | 2007-05-23 | 2008-08-28 | 삼성전자주식회사 | 플라즈마 이온 주입시스템 |
| DE102007030106A1 (de) * | 2007-06-28 | 2009-01-02 | Intega Gmbh | Verfahren und Vorrichtung zum Behandeln eines Halbleitersubstrats |
| EP2247819B1 (en) * | 2008-01-18 | 2022-11-02 | Pivotal Systems Corporation | Method and apparatus for in situ testing of gas flow controllers |
| US8271211B2 (en) * | 2009-12-09 | 2012-09-18 | Pivotal Systems Corporation | Method and apparatus for enhancing in-situ gas flow measurement performance |
| US8997686B2 (en) * | 2010-09-29 | 2015-04-07 | Mks Instruments, Inc. | System for and method of fast pulse gas delivery |
-
2011
- 2011-11-26 CN CN201180065637.3A patent/CN103329252B/zh active Active
- 2011-11-26 EP EP11844695.4A patent/EP2647036B1/en active Active
- 2011-11-26 SG SG10201509808WA patent/SG10201509808WA/en unknown
- 2011-11-26 WO PCT/US2011/062168 patent/WO2012074889A2/en not_active Ceased
- 2011-11-26 JP JP2013542066A patent/JP6355336B2/ja active Active
- 2011-11-26 KR KR1020137017070A patent/KR101953401B1/ko active Active
- 2011-11-26 US US13/990,760 patent/US20130251913A1/en not_active Abandoned
- 2011-11-26 SG SG2013041694A patent/SG190729A1/en unknown
- 2011-11-30 TW TW100144060A patent/TWI557771B/zh active
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