CN103329252B - 包括远程掺杂剂源的离子注入器系统以及包含该系统的方法 - Google Patents

包括远程掺杂剂源的离子注入器系统以及包含该系统的方法 Download PDF

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Publication number
CN103329252B
CN103329252B CN201180065637.3A CN201180065637A CN103329252B CN 103329252 B CN103329252 B CN 103329252B CN 201180065637 A CN201180065637 A CN 201180065637A CN 103329252 B CN103329252 B CN 103329252B
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China
Prior art keywords
dopant source
source gas
container
gas
supply
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CN201180065637.3A
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English (en)
Chinese (zh)
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CN103329252A (zh
Inventor
W·K·奥兰德
R·凯姆
J·D·斯威尼
J·R·德普雷斯
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Entegris Inc
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Advanced Technology Materials Inc
Entegris Inc
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/48—Ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/08—Ion sources; Ion guns
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/006—Details of gas supplies, e.g. in an ion source, to a beam line, to a specimen or to a workpiece
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T137/00—Fluid handling
    • Y10T137/8593—Systems

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  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electron Sources, Ion Sources (AREA)
  • Filling Or Discharging Of Gas Storage Vessels (AREA)
  • Physical Vapour Deposition (AREA)
CN201180065637.3A 2010-11-30 2011-11-26 包括远程掺杂剂源的离子注入器系统以及包含该系统的方法 Active CN103329252B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US41840210P 2010-11-30 2010-11-30
US61/418,402 2010-11-30
PCT/US2011/062168 WO2012074889A2 (en) 2010-11-30 2011-11-26 Ion implanter system including remote dopant source, and method comprising same

Publications (2)

Publication Number Publication Date
CN103329252A CN103329252A (zh) 2013-09-25
CN103329252B true CN103329252B (zh) 2016-06-15

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Family Applications (1)

Application Number Title Priority Date Filing Date
CN201180065637.3A Active CN103329252B (zh) 2010-11-30 2011-11-26 包括远程掺杂剂源的离子注入器系统以及包含该系统的方法

Country Status (8)

Country Link
US (1) US20130251913A1 (enExample)
EP (1) EP2647036B1 (enExample)
JP (1) JP6355336B2 (enExample)
KR (1) KR101953401B1 (enExample)
CN (1) CN103329252B (enExample)
SG (2) SG10201509808WA (enExample)
TW (1) TWI557771B (enExample)
WO (1) WO2012074889A2 (enExample)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201530041A (zh) * 2013-10-11 2015-08-01 Applied Materials Inc 促進對於多腔室的系統單點連接之緊密危險性氣體線分配
JP6385708B2 (ja) 2014-04-18 2018-09-05 日立ジョンソンコントロールズ空調株式会社 スクリュー圧縮機
US10229840B2 (en) * 2014-10-30 2019-03-12 Entegris, Inc. Ion implanter comprising integrated ventilation system
SG11201706560PA (en) 2015-02-12 2017-09-28 Entegris Inc Smart package
CN109196617B (zh) * 2016-05-13 2021-02-12 恩特格里斯公司 于氮离子植入中改善离子源效能的氟化组合物
TWI693656B (zh) * 2019-04-25 2020-05-11 晨碩國際有限公司 離子佈植機用之供氣系統
JP7255952B2 (ja) * 2019-06-20 2023-04-11 直嗣 山本 イオンビーム源
JP7449747B2 (ja) * 2020-03-30 2024-03-14 住友重機械工業株式会社 イオン源ガス配管構造およびイオン源ガス配管システム
US11527380B2 (en) 2020-04-01 2022-12-13 Taiwan Semiconductor Manufacturing Co., Ltd. Ion implanter toxic gas delivery system
US11569062B2 (en) * 2020-05-22 2023-01-31 Taiwan Semiconductor Manufacturing Co., Ltd. Gas delivery system for ion implanter
WO2025058838A1 (en) * 2023-09-12 2025-03-20 Lam Research Corporation Prevention of atmosphere exposure in gas delivery system

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030068851A1 (en) * 2001-02-12 2003-04-10 Todd Michael A. Dopant precursors and processes
CN1894763A (zh) * 2003-12-12 2007-01-10 山米奎普公司 用于在离子植入中延长设备正常运行时间的方法及装置
CN101213008A (zh) * 2005-05-03 2008-07-02 高级技术材料公司 流体储存和分配系统以及包含该系统的流体供应方法
US20080220596A1 (en) * 2005-08-30 2008-09-11 Advanced Technology Materials, Inc. Delivery of Low Pressure Dopant Gas to a High Voltage Ion Source
US20080289576A1 (en) * 2007-05-23 2008-11-27 Samsung Electronics Co., Ltd. Plasma based ion implantation system

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6298543A (ja) * 1985-10-24 1987-05-08 Sony Corp イオンビ−ム発生装置
FR2633143B1 (fr) * 1988-06-21 1990-10-12 Eferel Sa Procede et dispositif pour l'alimentation, en gaz de traitement, d'un reacteur situe dans une zone soumise a des champs electriques et/ou electromagnetiques intenses
US5518528A (en) * 1994-10-13 1996-05-21 Advanced Technology Materials, Inc. Storage and delivery system for gaseous hydride, halide, and organometallic group V compounds
US5980608A (en) * 1998-01-07 1999-11-09 Advanced Technology Materials, Inc. Throughflow gas storage and dispensing system
US6500238B1 (en) * 2000-08-10 2002-12-31 Advanced Technology Materials, Inc. Fluid storage and dispensing system
US6515290B1 (en) * 2000-09-05 2003-02-04 Axcelis Technologies, Inc. Bulk gas delivery system for ion implanters
US6857447B2 (en) 2002-06-10 2005-02-22 Advanced Technology Materials, Inc. Pressure-based gas delivery system and method for reducing risks associated with storage and delivery of high pressure gases
US6717079B2 (en) * 2002-06-21 2004-04-06 Varian Semiconductr Equipmentassociates, Inc. Electrical switches and methods of establishing an electrical connection
JP3971965B2 (ja) * 2002-07-04 2007-09-05 株式会社神戸製鋼所 イオン源への材料ガスの供給方法及びその装置
US6770117B2 (en) * 2002-10-31 2004-08-03 Advanced Technology Materials, Inc. Ion implantation and wet bench systems utilizing exhaust gas recirculation
US7955797B2 (en) * 2004-10-25 2011-06-07 Advanced Technology Materials, Inc. Fluid storage and dispensing system including dynamic fluid monitoring of fluid storage and dispensing vessel
DE102004052580B4 (de) * 2004-10-29 2008-09-25 Advanced Micro Devices, Inc., Sunnyvale Vorrichtung und Verfahren zum Zuführen von Vorstufengasen zu einer Implantationsanlage
JP5105775B2 (ja) * 2006-06-05 2012-12-26 キヤノン株式会社 絶縁配管、プラズマ処理装置及び方法
US7775236B2 (en) * 2007-02-26 2010-08-17 Applied Materials, Inc. Method and apparatus for controlling gas flow to a processing chamber
DE102007030106A1 (de) * 2007-06-28 2009-01-02 Intega Gmbh Verfahren und Vorrichtung zum Behandeln eines Halbleitersubstrats
EP2247819B1 (en) * 2008-01-18 2022-11-02 Pivotal Systems Corporation Method and apparatus for in situ testing of gas flow controllers
US8271211B2 (en) * 2009-12-09 2012-09-18 Pivotal Systems Corporation Method and apparatus for enhancing in-situ gas flow measurement performance
US8997686B2 (en) * 2010-09-29 2015-04-07 Mks Instruments, Inc. System for and method of fast pulse gas delivery

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030068851A1 (en) * 2001-02-12 2003-04-10 Todd Michael A. Dopant precursors and processes
CN1894763A (zh) * 2003-12-12 2007-01-10 山米奎普公司 用于在离子植入中延长设备正常运行时间的方法及装置
CN101213008A (zh) * 2005-05-03 2008-07-02 高级技术材料公司 流体储存和分配系统以及包含该系统的流体供应方法
US20080220596A1 (en) * 2005-08-30 2008-09-11 Advanced Technology Materials, Inc. Delivery of Low Pressure Dopant Gas to a High Voltage Ion Source
US20080289576A1 (en) * 2007-05-23 2008-11-27 Samsung Electronics Co., Ltd. Plasma based ion implantation system

Also Published As

Publication number Publication date
KR101953401B1 (ko) 2019-02-28
SG10201509808WA (en) 2015-12-30
TWI557771B (zh) 2016-11-11
TW201230134A (en) 2012-07-16
WO2012074889A2 (en) 2012-06-07
SG190729A1 (en) 2013-07-31
EP2647036A2 (en) 2013-10-09
JP6355336B2 (ja) 2018-07-11
WO2012074889A3 (en) 2013-01-10
EP2647036B1 (en) 2017-10-11
EP2647036A4 (en) 2015-12-16
US20130251913A1 (en) 2013-09-26
CN103329252A (zh) 2013-09-25
KR20130124338A (ko) 2013-11-13
JP2014505322A (ja) 2014-02-27

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