TWI557771B - 包括遠端摻雜劑來源的離子佈植器系統以及包含該離子佈植器系統之方法 - Google Patents
包括遠端摻雜劑來源的離子佈植器系統以及包含該離子佈植器系統之方法 Download PDFInfo
- Publication number
- TWI557771B TWI557771B TW100144060A TW100144060A TWI557771B TW I557771 B TWI557771 B TW I557771B TW 100144060 A TW100144060 A TW 100144060A TW 100144060 A TW100144060 A TW 100144060A TW I557771 B TWI557771 B TW I557771B
- Authority
- TW
- Taiwan
- Prior art keywords
- source gas
- dopant source
- container
- gas
- supply
- Prior art date
Links
- 239000002019 doping agent Substances 0.000 title claims description 275
- 238000000034 method Methods 0.000 title claims description 38
- 239000007789 gas Substances 0.000 claims description 513
- 238000005468 ion implantation Methods 0.000 claims description 203
- 238000003860 storage Methods 0.000 claims description 44
- 150000002500 ions Chemical class 0.000 claims description 43
- 239000003463 adsorbent Substances 0.000 claims description 31
- 238000012545 processing Methods 0.000 claims description 23
- 238000009826 distribution Methods 0.000 claims description 20
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 claims description 16
- 238000004519 manufacturing process Methods 0.000 claims description 15
- 239000004065 semiconductor Substances 0.000 claims description 15
- WTEOIRVLGSZEPR-UHFFFAOYSA-N boron trifluoride Chemical compound FB(F)F WTEOIRVLGSZEPR-UHFFFAOYSA-N 0.000 claims description 14
- 238000001179 sorption measurement Methods 0.000 claims description 14
- 230000001105 regulatory effect Effects 0.000 claims description 13
- 239000011261 inert gas Substances 0.000 claims description 10
- 239000007943 implant Substances 0.000 claims description 9
- DIOQZVSQGTUSAI-UHFFFAOYSA-N decane Chemical compound CCCCCCCCCC DIOQZVSQGTUSAI-UHFFFAOYSA-N 0.000 claims description 8
- 229910000073 phosphorus hydride Inorganic materials 0.000 claims description 8
- 229910015900 BF3 Inorganic materials 0.000 claims description 7
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims description 7
- 229910052707 ruthenium Inorganic materials 0.000 claims description 7
- 239000011810 insulating material Substances 0.000 claims description 5
- 230000008569 process Effects 0.000 claims description 5
- 238000000746 purification Methods 0.000 claims description 5
- -1 polytetrafluoroethylene Polymers 0.000 claims description 4
- 229920001343 polytetrafluoroethylene Polymers 0.000 claims description 4
- 239000004810 polytetrafluoroethylene Substances 0.000 claims description 4
- 230000008878 coupling Effects 0.000 claims description 2
- 238000010168 coupling process Methods 0.000 claims description 2
- 238000005859 coupling reaction Methods 0.000 claims description 2
- 239000004744 fabric Substances 0.000 claims description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 30
- 239000012530 fluid Substances 0.000 description 23
- 238000011049 filling Methods 0.000 description 16
- 239000000463 material Substances 0.000 description 16
- 229910052757 nitrogen Inorganic materials 0.000 description 15
- 238000010926 purge Methods 0.000 description 15
- 230000008054 signal transmission Effects 0.000 description 14
- 238000012423 maintenance Methods 0.000 description 12
- 238000012544 monitoring process Methods 0.000 description 6
- 239000000047 product Substances 0.000 description 6
- 239000002594 sorbent Substances 0.000 description 6
- 238000002955 isolation Methods 0.000 description 5
- 239000000203 mixture Substances 0.000 description 5
- 231100000331 toxic Toxicity 0.000 description 5
- 230000002588 toxic effect Effects 0.000 description 5
- 230000005540 biological transmission Effects 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 238000012806 monitoring device Methods 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 238000013022 venting Methods 0.000 description 4
- 238000010521 absorption reaction Methods 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 230000008929 regeneration Effects 0.000 description 3
- 238000011069 regeneration method Methods 0.000 description 3
- 239000013589 supplement Substances 0.000 description 3
- BLIQUJLAJXRXSG-UHFFFAOYSA-N 1-benzyl-3-(trifluoromethyl)pyrrolidin-1-ium-3-carboxylate Chemical compound C1C(C(=O)O)(C(F)(F)F)CCN1CC1=CC=CC=C1 BLIQUJLAJXRXSG-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- WUWOPJNIAKTBSJ-UHFFFAOYSA-N diboron tetrafluoride Chemical compound FB(F)B(F)F WUWOPJNIAKTBSJ-UHFFFAOYSA-N 0.000 description 2
- 239000012777 electrically insulating material Substances 0.000 description 2
- 239000012628 flowing agent Substances 0.000 description 2
- 238000010884 ion-beam technique Methods 0.000 description 2
- 230000000737 periodic effect Effects 0.000 description 2
- 230000029058 respiratory gaseous exchange Effects 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 238000009423 ventilation Methods 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229930182556 Polyacetal Natural products 0.000 description 1
- 239000004809 Teflon Substances 0.000 description 1
- 229920006362 Teflon® Polymers 0.000 description 1
- 239000002250 absorbent Substances 0.000 description 1
- 230000002745 absorbent Effects 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 230000001154 acute effect Effects 0.000 description 1
- 230000006978 adaptation Effects 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 230000000712 assembly Effects 0.000 description 1
- 238000000429 assembly Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000012459 cleaning agent Substances 0.000 description 1
- 239000011538 cleaning material Substances 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 229920001940 conductive polymer Polymers 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000003795 desorption Methods 0.000 description 1
- 230000001627 detrimental effect Effects 0.000 description 1
- OUJISMBVLMMJNR-UHFFFAOYSA-L dicesium;difluoride Chemical compound [F-].[F-].[Cs+].[Cs+] OUJISMBVLMMJNR-UHFFFAOYSA-L 0.000 description 1
- OKZIUSOJQLYFSE-UHFFFAOYSA-N difluoroboron Chemical compound F[B]F OKZIUSOJQLYFSE-UHFFFAOYSA-N 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010891 electric arc Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 238000005429 filling process Methods 0.000 description 1
- 238000011010 flushing procedure Methods 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000011068 loading method Methods 0.000 description 1
- 238000007885 magnetic separation Methods 0.000 description 1
- 238000007726 management method Methods 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- QKCGXXHCELUCKW-UHFFFAOYSA-N n-[4-[4-(dinaphthalen-2-ylamino)phenyl]phenyl]-n-naphthalen-2-ylnaphthalen-2-amine Chemical compound C1=CC=CC2=CC(N(C=3C=CC(=CC=3)C=3C=CC(=CC=3)N(C=3C=C4C=CC=CC4=CC=3)C=3C=C4C=CC=CC4=CC=3)C3=CC4=CC=CC=C4C=C3)=CC=C21 QKCGXXHCELUCKW-UHFFFAOYSA-N 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229920002098 polyfluorene Polymers 0.000 description 1
- 229920006324 polyoxymethylene Polymers 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- CBIYWHCPXHKZME-UHFFFAOYSA-J tetrafluororuthenium Chemical compound [F-].[F-].[F-].[F-].[Ru+4] CBIYWHCPXHKZME-UHFFFAOYSA-J 0.000 description 1
- 239000002341 toxic gas Substances 0.000 description 1
- 230000032258 transport Effects 0.000 description 1
- YRQNNUGOBNRKKW-UHFFFAOYSA-K trifluororuthenium Chemical compound F[Ru](F)F YRQNNUGOBNRKKW-UHFFFAOYSA-K 0.000 description 1
- 238000010977 unit operation Methods 0.000 description 1
- 229940095676 wafer product Drugs 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/48—Ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
- H01J37/08—Ion sources; Ion guns
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/006—Details of gas supplies, e.g. in an ion source, to a beam line, to a specimen or to a workpiece
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T137/00—Fluid handling
- Y10T137/8593—Systems
Landscapes
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- High Energy & Nuclear Physics (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electron Sources, Ion Sources (AREA)
- Filling Or Discharging Of Gas Storage Vessels (AREA)
- Physical Vapour Deposition (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US41840210P | 2010-11-30 | 2010-11-30 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201230134A TW201230134A (en) | 2012-07-16 |
| TWI557771B true TWI557771B (zh) | 2016-11-11 |
Family
ID=46172480
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW100144060A TWI557771B (zh) | 2010-11-30 | 2011-11-30 | 包括遠端摻雜劑來源的離子佈植器系統以及包含該離子佈植器系統之方法 |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US20130251913A1 (enExample) |
| EP (1) | EP2647036B1 (enExample) |
| JP (1) | JP6355336B2 (enExample) |
| KR (1) | KR101953401B1 (enExample) |
| CN (1) | CN103329252B (enExample) |
| SG (2) | SG10201509808WA (enExample) |
| TW (1) | TWI557771B (enExample) |
| WO (1) | WO2012074889A2 (enExample) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW201530041A (zh) * | 2013-10-11 | 2015-08-01 | Applied Materials Inc | 促進對於多腔室的系統單點連接之緊密危險性氣體線分配 |
| JP6385708B2 (ja) | 2014-04-18 | 2018-09-05 | 日立ジョンソンコントロールズ空調株式会社 | スクリュー圧縮機 |
| US10229840B2 (en) * | 2014-10-30 | 2019-03-12 | Entegris, Inc. | Ion implanter comprising integrated ventilation system |
| SG11201706560PA (en) | 2015-02-12 | 2017-09-28 | Entegris Inc | Smart package |
| CN109196617B (zh) * | 2016-05-13 | 2021-02-12 | 恩特格里斯公司 | 于氮离子植入中改善离子源效能的氟化组合物 |
| TWI693656B (zh) * | 2019-04-25 | 2020-05-11 | 晨碩國際有限公司 | 離子佈植機用之供氣系統 |
| JP7255952B2 (ja) * | 2019-06-20 | 2023-04-11 | 直嗣 山本 | イオンビーム源 |
| JP7449747B2 (ja) * | 2020-03-30 | 2024-03-14 | 住友重機械工業株式会社 | イオン源ガス配管構造およびイオン源ガス配管システム |
| US11527380B2 (en) | 2020-04-01 | 2022-12-13 | Taiwan Semiconductor Manufacturing Co., Ltd. | Ion implanter toxic gas delivery system |
| US11569062B2 (en) * | 2020-05-22 | 2023-01-31 | Taiwan Semiconductor Manufacturing Co., Ltd. | Gas delivery system for ion implanter |
| WO2025058838A1 (en) * | 2023-09-12 | 2025-03-20 | Lam Research Corporation | Prevention of atmosphere exposure in gas delivery system |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6298543A (ja) * | 1985-10-24 | 1987-05-08 | Sony Corp | イオンビ−ム発生装置 |
| TW372264B (en) * | 1998-01-07 | 1999-10-21 | L Air Liquide Sa Pour L Expl Des Procedes Georges Claude | Throughflow gas storage and dispensing system |
| TW507246B (en) * | 2000-09-05 | 2002-10-21 | Axcelis Tech Inc | Bulk gas delivery system for ion implanters |
| JP2004039475A (ja) * | 2002-07-04 | 2004-02-05 | Kobe Steel Ltd | イオン源への材料ガスの供給方法及びその装置 |
Family Cites Families (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2633143B1 (fr) * | 1988-06-21 | 1990-10-12 | Eferel Sa | Procede et dispositif pour l'alimentation, en gaz de traitement, d'un reacteur situe dans une zone soumise a des champs electriques et/ou electromagnetiques intenses |
| US5518528A (en) * | 1994-10-13 | 1996-05-21 | Advanced Technology Materials, Inc. | Storage and delivery system for gaseous hydride, halide, and organometallic group V compounds |
| US6500238B1 (en) * | 2000-08-10 | 2002-12-31 | Advanced Technology Materials, Inc. | Fluid storage and dispensing system |
| JP4866534B2 (ja) * | 2001-02-12 | 2012-02-01 | エーエスエム アメリカ インコーポレイテッド | 半導体膜の改良された堆積方法 |
| US6857447B2 (en) | 2002-06-10 | 2005-02-22 | Advanced Technology Materials, Inc. | Pressure-based gas delivery system and method for reducing risks associated with storage and delivery of high pressure gases |
| US6717079B2 (en) * | 2002-06-21 | 2004-04-06 | Varian Semiconductr Equipmentassociates, Inc. | Electrical switches and methods of establishing an electrical connection |
| US6770117B2 (en) * | 2002-10-31 | 2004-08-03 | Advanced Technology Materials, Inc. | Ion implantation and wet bench systems utilizing exhaust gas recirculation |
| WO2005060602A2 (en) * | 2003-12-12 | 2005-07-07 | Semequip, Inc. | Controlling the flow of vapors sublimated from solids |
| US7955797B2 (en) * | 2004-10-25 | 2011-06-07 | Advanced Technology Materials, Inc. | Fluid storage and dispensing system including dynamic fluid monitoring of fluid storage and dispensing vessel |
| DE102004052580B4 (de) * | 2004-10-29 | 2008-09-25 | Advanced Micro Devices, Inc., Sunnyvale | Vorrichtung und Verfahren zum Zuführen von Vorstufengasen zu einer Implantationsanlage |
| CN101213008B (zh) * | 2005-05-03 | 2011-09-28 | 高级技术材料公司 | 流体储存和分配系统以及包含该系统的流体供应方法 |
| KR20080041285A (ko) * | 2005-08-30 | 2008-05-09 | 어드밴스드 테크놀러지 머티리얼즈, 인코포레이티드 | 저압 가스 이송 장치 및 방법 |
| JP5105775B2 (ja) * | 2006-06-05 | 2012-12-26 | キヤノン株式会社 | 絶縁配管、プラズマ処理装置及び方法 |
| US7775236B2 (en) * | 2007-02-26 | 2010-08-17 | Applied Materials, Inc. | Method and apparatus for controlling gas flow to a processing chamber |
| KR100855002B1 (ko) * | 2007-05-23 | 2008-08-28 | 삼성전자주식회사 | 플라즈마 이온 주입시스템 |
| DE102007030106A1 (de) * | 2007-06-28 | 2009-01-02 | Intega Gmbh | Verfahren und Vorrichtung zum Behandeln eines Halbleitersubstrats |
| EP2247819B1 (en) * | 2008-01-18 | 2022-11-02 | Pivotal Systems Corporation | Method and apparatus for in situ testing of gas flow controllers |
| US8271211B2 (en) * | 2009-12-09 | 2012-09-18 | Pivotal Systems Corporation | Method and apparatus for enhancing in-situ gas flow measurement performance |
| US8997686B2 (en) * | 2010-09-29 | 2015-04-07 | Mks Instruments, Inc. | System for and method of fast pulse gas delivery |
-
2011
- 2011-11-26 CN CN201180065637.3A patent/CN103329252B/zh active Active
- 2011-11-26 EP EP11844695.4A patent/EP2647036B1/en active Active
- 2011-11-26 SG SG10201509808WA patent/SG10201509808WA/en unknown
- 2011-11-26 WO PCT/US2011/062168 patent/WO2012074889A2/en not_active Ceased
- 2011-11-26 JP JP2013542066A patent/JP6355336B2/ja active Active
- 2011-11-26 KR KR1020137017070A patent/KR101953401B1/ko active Active
- 2011-11-26 US US13/990,760 patent/US20130251913A1/en not_active Abandoned
- 2011-11-26 SG SG2013041694A patent/SG190729A1/en unknown
- 2011-11-30 TW TW100144060A patent/TWI557771B/zh active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6298543A (ja) * | 1985-10-24 | 1987-05-08 | Sony Corp | イオンビ−ム発生装置 |
| TW372264B (en) * | 1998-01-07 | 1999-10-21 | L Air Liquide Sa Pour L Expl Des Procedes Georges Claude | Throughflow gas storage and dispensing system |
| TW507246B (en) * | 2000-09-05 | 2002-10-21 | Axcelis Tech Inc | Bulk gas delivery system for ion implanters |
| JP2004039475A (ja) * | 2002-07-04 | 2004-02-05 | Kobe Steel Ltd | イオン源への材料ガスの供給方法及びその装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| CN103329252B (zh) | 2016-06-15 |
| KR101953401B1 (ko) | 2019-02-28 |
| SG10201509808WA (en) | 2015-12-30 |
| TW201230134A (en) | 2012-07-16 |
| WO2012074889A2 (en) | 2012-06-07 |
| SG190729A1 (en) | 2013-07-31 |
| EP2647036A2 (en) | 2013-10-09 |
| JP6355336B2 (ja) | 2018-07-11 |
| WO2012074889A3 (en) | 2013-01-10 |
| EP2647036B1 (en) | 2017-10-11 |
| EP2647036A4 (en) | 2015-12-16 |
| US20130251913A1 (en) | 2013-09-26 |
| CN103329252A (zh) | 2013-09-25 |
| KR20130124338A (ko) | 2013-11-13 |
| JP2014505322A (ja) | 2014-02-27 |
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