JP6355336B2 - 遠隔ドーパント源を含むイオン注入機システム及び当該イオン注入機システムを備える方法 - Google Patents

遠隔ドーパント源を含むイオン注入機システム及び当該イオン注入機システムを備える方法 Download PDF

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Publication number
JP6355336B2
JP6355336B2 JP2013542066A JP2013542066A JP6355336B2 JP 6355336 B2 JP6355336 B2 JP 6355336B2 JP 2013542066 A JP2013542066 A JP 2013542066A JP 2013542066 A JP2013542066 A JP 2013542066A JP 6355336 B2 JP6355336 B2 JP 6355336B2
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Japan
Prior art keywords
dopant source
source gas
gas
ion implantation
vessel
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JP2013542066A
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English (en)
Japanese (ja)
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JP2014505322A5 (enExample
JP2014505322A (ja
Inventor
オランダー，ダブリュー．，カール
カイム，ロバート
スウィーニー，ジョセフ，ディー．
デプレ，ジョセフ，アール．
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Entegris Inc
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Entegris Inc
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/48—Ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/08—Ion sources; Ion guns
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/006—Details of gas supplies, e.g. in an ion source, to a beam line, to a specimen or to a workpiece
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T137/00—Fluid handling
    • Y10T137/8593—Systems

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  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electron Sources, Ion Sources (AREA)
  • Filling Or Discharging Of Gas Storage Vessels (AREA)
  • Physical Vapour Deposition (AREA)
JP2013542066A 2010-11-30 2011-11-26 遠隔ドーパント源を含むイオン注入機システム及び当該イオン注入機システムを備える方法 Active JP6355336B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US41840210P 2010-11-30 2010-11-30
US61/418,402 2010-11-30
PCT/US2011/062168 WO2012074889A2 (en) 2010-11-30 2011-11-26 Ion implanter system including remote dopant source, and method comprising same

Publications (3)

Publication Number Publication Date
JP2014505322A JP2014505322A (ja) 2014-02-27
JP2014505322A5 JP2014505322A5 (enExample) 2018-05-24
JP6355336B2 true JP6355336B2 (ja) 2018-07-11

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
JP2013542066A Active JP6355336B2 (ja) 2010-11-30 2011-11-26 遠隔ドーパント源を含むイオン注入機システム及び当該イオン注入機システムを備える方法

Country Status (8)

Country Link
US (1) US20130251913A1 (enExample)
EP (1) EP2647036B1 (enExample)
JP (1) JP6355336B2 (enExample)
KR (1) KR101953401B1 (enExample)
CN (1) CN103329252B (enExample)
SG (2) SG10201509808WA (enExample)
TW (1) TWI557771B (enExample)
WO (1) WO2012074889A2 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10145374B2 (en) 2014-04-18 2018-12-04 Hitachi-Johnson Controls Air Conditioning, Inc. Screw compressor

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* Cited by examiner, † Cited by third party
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TW201530041A (zh) * 2013-10-11 2015-08-01 Applied Materials Inc 促進對於多腔室的系統單點連接之緊密危險性氣體線分配
US10229840B2 (en) * 2014-10-30 2019-03-12 Entegris, Inc. Ion implanter comprising integrated ventilation system
SG11201706560PA (en) 2015-02-12 2017-09-28 Entegris Inc Smart package
CN109196617B (zh) * 2016-05-13 2021-02-12 恩特格里斯公司 于氮离子植入中改善离子源效能的氟化组合物
TWI693656B (zh) * 2019-04-25 2020-05-11 晨碩國際有限公司 離子佈植機用之供氣系統
JP7255952B2 (ja) * 2019-06-20 2023-04-11 直嗣 山本 イオンビーム源
JP7449747B2 (ja) * 2020-03-30 2024-03-14 住友重機械工業株式会社 イオン源ガス配管構造およびイオン源ガス配管システム
US11527380B2 (en) 2020-04-01 2022-12-13 Taiwan Semiconductor Manufacturing Co., Ltd. Ion implanter toxic gas delivery system
US11569062B2 (en) * 2020-05-22 2023-01-31 Taiwan Semiconductor Manufacturing Co., Ltd. Gas delivery system for ion implanter
WO2025058838A1 (en) * 2023-09-12 2025-03-20 Lam Research Corporation Prevention of atmosphere exposure in gas delivery system

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FR2633143B1 (fr) * 1988-06-21 1990-10-12 Eferel Sa Procede et dispositif pour l'alimentation, en gaz de traitement, d'un reacteur situe dans une zone soumise a des champs electriques et/ou electromagnetiques intenses
US5518528A (en) * 1994-10-13 1996-05-21 Advanced Technology Materials, Inc. Storage and delivery system for gaseous hydride, halide, and organometallic group V compounds
US5980608A (en) * 1998-01-07 1999-11-09 Advanced Technology Materials, Inc. Throughflow gas storage and dispensing system
US6500238B1 (en) * 2000-08-10 2002-12-31 Advanced Technology Materials, Inc. Fluid storage and dispensing system
US6515290B1 (en) * 2000-09-05 2003-02-04 Axcelis Technologies, Inc. Bulk gas delivery system for ion implanters
JP4866534B2 (ja) * 2001-02-12 2012-02-01 エーエスエム アメリカ インコーポレイテッド 半導体膜の改良された堆積方法
US6857447B2 (en) 2002-06-10 2005-02-22 Advanced Technology Materials, Inc. Pressure-based gas delivery system and method for reducing risks associated with storage and delivery of high pressure gases
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KR20080041285A (ko) * 2005-08-30 2008-05-09 어드밴스드 테크놀러지 머티리얼즈, 인코포레이티드 저압 가스 이송 장치 및 방법
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10145374B2 (en) 2014-04-18 2018-12-04 Hitachi-Johnson Controls Air Conditioning, Inc. Screw compressor

Also Published As

Publication number Publication date
CN103329252B (zh) 2016-06-15
KR101953401B1 (ko) 2019-02-28
SG10201509808WA (en) 2015-12-30
TWI557771B (zh) 2016-11-11
TW201230134A (en) 2012-07-16
WO2012074889A2 (en) 2012-06-07
SG190729A1 (en) 2013-07-31
EP2647036A2 (en) 2013-10-09
WO2012074889A3 (en) 2013-01-10
EP2647036B1 (en) 2017-10-11
EP2647036A4 (en) 2015-12-16
US20130251913A1 (en) 2013-09-26
CN103329252A (zh) 2013-09-25
KR20130124338A (ko) 2013-11-13
JP2014505322A (ja) 2014-02-27

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