JP2014503124A5 - - Google Patents

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Publication number
JP2014503124A5
JP2014503124A5 JP2013549902A JP2013549902A JP2014503124A5 JP 2014503124 A5 JP2014503124 A5 JP 2014503124A5 JP 2013549902 A JP2013549902 A JP 2013549902A JP 2013549902 A JP2013549902 A JP 2013549902A JP 2014503124 A5 JP2014503124 A5 JP 2014503124A5
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JP
Japan
Prior art keywords
conductive material
light emitting
insulating layer
forming
insulating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2013549902A
Other languages
English (en)
Japanese (ja)
Other versions
JP6110310B2 (ja
JP2014503124A (ja
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Publication date
Application filed filed Critical
Priority claimed from PCT/IB2011/056010 external-priority patent/WO2012101489A1/en
Publication of JP2014503124A publication Critical patent/JP2014503124A/ja
Publication of JP2014503124A5 publication Critical patent/JP2014503124A5/ja
Application granted granted Critical
Publication of JP6110310B2 publication Critical patent/JP6110310B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2013549902A 2011-01-24 2011-12-29 発光装置及び発光装置の製造方法 Active JP6110310B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201161435368P 2011-01-24 2011-01-24
US61/435,368 2011-01-24
PCT/IB2011/056010 WO2012101489A1 (en) 2011-01-24 2011-12-29 Light emitting device chip scale package

Publications (3)

Publication Number Publication Date
JP2014503124A JP2014503124A (ja) 2014-02-06
JP2014503124A5 true JP2014503124A5 (enExample) 2015-01-29
JP6110310B2 JP6110310B2 (ja) 2017-04-05

Family

ID=45531903

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2013549902A Active JP6110310B2 (ja) 2011-01-24 2011-12-29 発光装置及び発光装置の製造方法

Country Status (6)

Country Link
US (1) US8951817B2 (enExample)
EP (1) EP2668675B1 (enExample)
JP (1) JP6110310B2 (enExample)
KR (1) KR101875247B1 (enExample)
TW (1) TWI553912B (enExample)
WO (1) WO2012101489A1 (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102013100470A1 (de) * 2013-01-17 2014-07-17 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip
US9577172B2 (en) * 2013-02-19 2017-02-21 Koninklijke Philips N.V. Light emitting die component formed by multilayer structures
KR102345751B1 (ko) 2015-01-05 2022-01-03 삼성전자주식회사 반도체 발광소자 패키지 및 그 제조 방법
KR102587215B1 (ko) 2016-12-21 2023-10-12 삼성디스플레이 주식회사 발광 장치 및 이를 구비한 표시 장치
KR102457271B1 (ko) * 2021-03-03 2022-10-21 웨이브로드 주식회사 반도체 발광소자용 지지 기판을 제조하는 방법

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000244012A (ja) * 1998-12-22 2000-09-08 Toyoda Gosei Co Ltd Iii族窒化物系化合物半導体素子の製造方法
JP3589187B2 (ja) * 2000-07-31 2004-11-17 日亜化学工業株式会社 発光装置の形成方法
JP4996463B2 (ja) 2004-06-30 2012-08-08 クリー インコーポレイテッド 発光デバイスをパッケージするためのチップスケール方法およびチップスケールにパッケージされた発光デバイス
TWI294694B (en) * 2005-06-14 2008-03-11 Ind Tech Res Inst Led wafer-level chip scale packaging
JP2010021261A (ja) * 2008-07-09 2010-01-28 Toshiba Corp 光半導体素子の製造方法、光半導体素子及び光半導体装置の製造方法
JP4799606B2 (ja) * 2008-12-08 2011-10-26 株式会社東芝 光半導体装置及び光半導体装置の製造方法
JP4724222B2 (ja) * 2008-12-12 2011-07-13 株式会社東芝 発光装置の製造方法
KR101047801B1 (ko) * 2008-12-29 2011-07-07 엘지이노텍 주식회사 발광 디바이스 패키지 및 그 제조방법
JP5759790B2 (ja) * 2010-06-07 2015-08-05 株式会社東芝 半導体発光装置の製造方法

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