JP2018513559A5 - - Google Patents

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Publication number
JP2018513559A5
JP2018513559A5 JP2017552102A JP2017552102A JP2018513559A5 JP 2018513559 A5 JP2018513559 A5 JP 2018513559A5 JP 2017552102 A JP2017552102 A JP 2017552102A JP 2017552102 A JP2017552102 A JP 2017552102A JP 2018513559 A5 JP2018513559 A5 JP 2018513559A5
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JP
Japan
Prior art keywords
electrode
socket area
electrodes
contact
connection conductors
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Application number
JP2017552102A
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English (en)
Japanese (ja)
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JP6788607B2 (ja
JP2018513559A (ja
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Publication date
Priority claimed from US14/695,835 external-priority patent/US9515125B2/en
Application filed filed Critical
Publication of JP2018513559A publication Critical patent/JP2018513559A/ja
Publication of JP2018513559A5 publication Critical patent/JP2018513559A5/ja
Application granted granted Critical
Publication of JP6788607B2 publication Critical patent/JP6788607B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2017552102A 2015-04-24 2016-04-14 階段型コンタクトソケット領域を形成する方法 Expired - Fee Related JP6788607B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US14/695,835 2015-04-24
US14/695,835 US9515125B2 (en) 2015-04-24 2015-04-24 Socket structure for three-dimensional memory
PCT/JP2016/002025 WO2016170759A1 (en) 2015-04-24 2016-04-14 Socket structure for three-dimensional memory

Publications (3)

Publication Number Publication Date
JP2018513559A JP2018513559A (ja) 2018-05-24
JP2018513559A5 true JP2018513559A5 (enExample) 2019-05-23
JP6788607B2 JP6788607B2 (ja) 2020-11-25

Family

ID=55863153

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2017552102A Expired - Fee Related JP6788607B2 (ja) 2015-04-24 2016-04-14 階段型コンタクトソケット領域を形成する方法

Country Status (4)

Country Link
US (3) US9515125B2 (enExample)
JP (1) JP6788607B2 (enExample)
KR (1) KR20170141665A (enExample)
WO (1) WO2016170759A1 (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9478556B2 (en) 2014-09-11 2016-10-25 Kabushiki Kaisha Toshiba Semiconductor memory device
KR102536261B1 (ko) 2015-12-18 2023-05-25 삼성전자주식회사 3차원 반도체 장치
US9767901B1 (en) * 2016-08-24 2017-09-19 Hewlett Packard Enterprise Development Lp Circuits having selector devices with different I-V responses
US10777566B2 (en) * 2017-11-10 2020-09-15 Macronix International Co., Ltd. 3D array arranged for memory and in-memory sum-of-products operations
CN111149206B (zh) * 2017-11-15 2023-08-18 桑迪士克科技有限责任公司 在平台区中具有加厚字线的三维存储器器件及其制造方法
US10461163B2 (en) 2017-11-15 2019-10-29 Sandisk Technologies Llc Three-dimensional memory device with thickened word lines in terrace region and method of making thereof
US10453854B2 (en) 2017-11-15 2019-10-22 Sandisk Technologies Llc Three-dimensional memory device with thickened word lines in terrace region
US11222695B2 (en) * 2019-11-15 2022-01-11 Micron Technology, Inc. Socket design for a memory device

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
ITTO20021118A1 (it) * 2002-12-24 2004-06-25 St Microelectronics Srl Dispositivo mos e procedimento di fabbricazione di
JP5016832B2 (ja) * 2006-03-27 2012-09-05 株式会社東芝 不揮発性半導体記憶装置及びその製造方法
US7910973B2 (en) * 2008-03-17 2011-03-22 Kabushiki Kaisha Toshiba Semiconductor storage device
JP2010027870A (ja) * 2008-07-18 2010-02-04 Toshiba Corp 半導体記憶装置及びその製造方法
JP5380190B2 (ja) * 2009-07-21 2014-01-08 株式会社東芝 不揮発性半導体記憶装置及びその製造方法
KR101559958B1 (ko) * 2009-12-18 2015-10-13 삼성전자주식회사 3차원 반도체 장치의 제조 방법 및 이에 따라 제조된 3차원 반도체 장치
JP2011211039A (ja) * 2010-03-30 2011-10-20 Toshiba Corp 記憶装置及びその製造方法
US8885382B2 (en) * 2012-06-29 2014-11-11 Intel Corporation Compact socket connection to cross-point array
JP2015056452A (ja) * 2013-09-10 2015-03-23 株式会社東芝 半導体記憶装置及びその製造方法

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