JP2014203873A - 電圧非直線抵抗体、その製造方法およびそれを含む過電圧保護装置 - Google Patents
電圧非直線抵抗体、その製造方法およびそれを含む過電圧保護装置 Download PDFInfo
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- 238000000034 method Methods 0.000 title claims description 7
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- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims abstract description 63
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims abstract description 35
- 239000011572 manganese Substances 0.000 claims abstract description 31
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 12
- 229910052748 manganese Inorganic materials 0.000 claims abstract description 10
- 229910052787 antimony Inorganic materials 0.000 claims abstract description 9
- 229910052759 nickel Inorganic materials 0.000 claims abstract description 9
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 claims abstract description 7
- 239000004110 Zinc silicate Substances 0.000 claims abstract description 6
- 229910052797 bismuth Inorganic materials 0.000 claims abstract description 6
- XSMMCTCMFDWXIX-UHFFFAOYSA-N zinc silicate Chemical compound [Zn+2].[O-][Si]([O-])=O XSMMCTCMFDWXIX-UHFFFAOYSA-N 0.000 claims abstract description 6
- 235000019352 zinc silicate Nutrition 0.000 claims abstract description 6
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims abstract description 5
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 claims abstract description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 4
- 239000010703 silicon Substances 0.000 claims abstract description 4
- 239000000203 mixture Substances 0.000 claims description 54
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 41
- 239000011701 zinc Substances 0.000 claims description 26
- 229910004283 SiO 4 Inorganic materials 0.000 claims description 21
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 17
- 229910015902 Bi 2 O 3 Inorganic materials 0.000 claims description 12
- 239000000843 powder Substances 0.000 claims description 11
- 229910052760 oxygen Inorganic materials 0.000 claims description 9
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 8
- 239000001301 oxygen Substances 0.000 claims description 8
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 7
- 238000005245 sintering Methods 0.000 claims description 5
- 239000000126 substance Substances 0.000 claims description 5
- 229910000416 bismuth oxide Inorganic materials 0.000 claims description 4
- TYIXMATWDRGMPF-UHFFFAOYSA-N dibismuth;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Bi+3].[Bi+3] TYIXMATWDRGMPF-UHFFFAOYSA-N 0.000 claims description 4
- 235000012239 silicon dioxide Nutrition 0.000 claims description 4
- 239000000377 silicon dioxide Substances 0.000 claims description 4
- 150000002697 manganese compounds Chemical class 0.000 claims description 3
- 150000002816 nickel compounds Chemical class 0.000 claims description 3
- GHPGOEFPKIHBNM-UHFFFAOYSA-N antimony(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Sb+3].[Sb+3] GHPGOEFPKIHBNM-UHFFFAOYSA-N 0.000 claims description 2
- 229910052581 Si3N4 Inorganic materials 0.000 claims 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims 2
- 229940126062 Compound A Drugs 0.000 claims 1
- NLDMNSXOCDLTTB-UHFFFAOYSA-N Heterophylliin A Natural products O1C2COC(=O)C3=CC(O)=C(O)C(O)=C3C3=C(O)C(O)=C(O)C=C3C(=O)OC2C(OC(=O)C=2C=C(O)C(O)=C(O)C=2)C(O)C1OC(=O)C1=CC(O)=C(O)C(O)=C1 NLDMNSXOCDLTTB-UHFFFAOYSA-N 0.000 claims 1
- 230000000052 comparative effect Effects 0.000 description 49
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- 239000011787 zinc oxide Substances 0.000 description 28
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- 229910052782 aluminium Inorganic materials 0.000 description 4
- 239000011230 binding agent Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 238000000465 moulding Methods 0.000 description 4
- 229910052725 zinc Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 229920006395 saturated elastomer Polymers 0.000 description 3
- -1 Sb 2 O 3 Inorganic materials 0.000 description 2
- 239000006096 absorbing agent Substances 0.000 description 2
- 229910000410 antimony oxide Inorganic materials 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 239000002270 dispersing agent Substances 0.000 description 2
- 238000002149 energy-dispersive X-ray emission spectroscopy Methods 0.000 description 2
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- 239000000463 material Substances 0.000 description 2
- VTRUBDSFZJNXHI-UHFFFAOYSA-N oxoantimony Chemical compound [Sb]=O VTRUBDSFZJNXHI-UHFFFAOYSA-N 0.000 description 2
- 229910052761 rare earth metal Inorganic materials 0.000 description 2
- 239000007921 spray Substances 0.000 description 2
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- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
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- 239000004372 Polyvinyl alcohol Substances 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 230000008859 change Effects 0.000 description 1
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- 229910052804 chromium Inorganic materials 0.000 description 1
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- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
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- 238000010191 image analysis Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
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- 150000004767 nitrides Chemical class 0.000 description 1
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- 230000008569 process Effects 0.000 description 1
- 238000004445 quantitative analysis Methods 0.000 description 1
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- 230000035484 reaction time Effects 0.000 description 1
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- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
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- Compositions Of Oxide Ceramics (AREA)
Abstract
Description
(実験例)
(実施例1〜5および比較例1〜8)
表1は、本実験例における実施例1〜5および比較例1〜8の各々の条件および結果をまとめたものである。
Si3N4の原料粉としては、平均粒子径(d50)が0.6μmである宇部興産製の型番SN−E10を用いた。Bi2O3、Sb2O3、NiO、Mn3O4、Cr2O3、Co3O4およびSiO2の各々は、平均粒子径(d50)が1μm以下である工業用原料粉末を用いた。
Claims (5)
- 酸化亜鉛(ZnO)を主成分とし、ビスマス(Bi)、アンチモン(Sb)、ニッケル(Ni)、マンガン(Mn)およびケイ素(Si)を副成分とする焼結体を備え、
前記焼結体は、ケイ酸亜鉛(Zn2SiO4)を12%以上の占有率で含み、かつ、Ni3.2Bi9.8O20とBi1.83Mn0.17O3.08とを共に含む、電圧非直線抵抗体。 - 酸化亜鉛(ZnO)、酸化ビスマス(Bi2O3)、酸化アンチモン(Sb2O3)、ニッケル単体(Ni)またはニッケル化合物、および、マンガン単体(Mn)またはマンガン化合物を混合して第1混合物を作製する工程と、
前記第1混合物に、二酸化ケイ素(SiO2)または酸素を含む雰囲気中において酸化ケイ素になりうる成分と窒化ケイ素(Si3N4)とを添加して第2混合物を作製する工程と、
前記第2混合物を含む造粒粉を焼結して焼結体を作製する工程と
を備える、電圧非直線抵抗体の製造方法。 - 前記第2混合物を作製する工程において、前記窒化ケイ素(Si3N4)を前記第2混合物中において1mol%以上4mol%以下となるように添加する、請求項2に記載の電圧非直線抵抗体の製造方法。
- 前記第2混合物を作製する工程において、前記二酸化ケイ素(SiO2)または酸素を含む雰囲気中において酸化ケイ素になりうる前記成分を、前記第2混合物中において1mol%以上3mol%以下となるように添加する、請求項2または3に記載の電圧非直線抵抗体の製造方法。
- 被保護機器に過電圧が印加されることを防止する過電圧保護装置であって、
複数の電極を有する電圧非直線抵抗体と、
前記被保護機器に電気的に接続された配線と
を備え、
前記複数の電極のうちの少なくとも1つの電極は接地され、
前記複数の電極のうちの少なくとも1つの電極は前記配線に接続され、
前記電圧非直線抵抗体は、酸化亜鉛(ZnO)を主成分とし、ビスマス(Bi)、アンチモン(Sb)、ニッケル(Ni)、マンガン(Mn)およびケイ素(Si)を副成分とする焼結体を含み、
前記焼結体は、ケイ酸亜鉛(Zn2SiO4)を12%以上の占有率で含み、かつ、Ni3.2Bi9.8O20とBi1.83Mn0.17O3.08とを共に含む、過電圧保護装置。
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Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63296308A (ja) * | 1987-05-28 | 1988-12-02 | Matsushita Electric Ind Co Ltd | 酸化亜鉛形バリスタ |
JPS6442801A (en) * | 1987-08-11 | 1989-02-15 | Ngk Insulators Ltd | Voltage-dependent nonlinear resistor |
JPH02241003A (ja) * | 1989-03-15 | 1990-09-25 | Matsushita Electric Ind Co Ltd | 酸化亜鉛形バリスタの製造方法 |
JPH04370687A (ja) * | 1991-06-18 | 1992-12-24 | Mitsubishi Electric Corp | 酸化亜鉛形避雷器の劣化監視装置 |
JPH0555008A (ja) * | 1991-08-27 | 1993-03-05 | Ngk Insulators Ltd | 電圧非直線抵抗体 |
US20090021341A1 (en) * | 2007-07-19 | 2009-01-22 | Tdk Corporation | Varistor |
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2013
- 2013-04-02 JP JP2013076697A patent/JP5995772B2/ja active Active
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63296308A (ja) * | 1987-05-28 | 1988-12-02 | Matsushita Electric Ind Co Ltd | 酸化亜鉛形バリスタ |
JPS6442801A (en) * | 1987-08-11 | 1989-02-15 | Ngk Insulators Ltd | Voltage-dependent nonlinear resistor |
JPH02241003A (ja) * | 1989-03-15 | 1990-09-25 | Matsushita Electric Ind Co Ltd | 酸化亜鉛形バリスタの製造方法 |
JPH04370687A (ja) * | 1991-06-18 | 1992-12-24 | Mitsubishi Electric Corp | 酸化亜鉛形避雷器の劣化監視装置 |
JPH0555008A (ja) * | 1991-08-27 | 1993-03-05 | Ngk Insulators Ltd | 電圧非直線抵抗体 |
US20090021341A1 (en) * | 2007-07-19 | 2009-01-22 | Tdk Corporation | Varistor |
JP2009026954A (ja) * | 2007-07-19 | 2009-02-05 | Tdk Corp | バリスタ |
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