JP5929152B2 - 非直線抵抗体素子の製造方法 - Google Patents
非直線抵抗体素子の製造方法 Download PDFInfo
- Publication number
- JP5929152B2 JP5929152B2 JP2011273173A JP2011273173A JP5929152B2 JP 5929152 B2 JP5929152 B2 JP 5929152B2 JP 2011273173 A JP2011273173 A JP 2011273173A JP 2011273173 A JP2011273173 A JP 2011273173A JP 5929152 B2 JP5929152 B2 JP 5929152B2
- Authority
- JP
- Japan
- Prior art keywords
- metal
- nickel
- zinc oxide
- mol
- cobalt
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
- H01C7/10—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material voltage responsive, i.e. varistors
- H01C7/105—Varistor cores
- H01C7/108—Metal oxide
- H01C7/112—ZnO type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
- H01C17/06—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base
- H01C17/065—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base by thick film techniques, e.g. serigraphy
- H01C17/06506—Precursor compositions therefor, e.g. pastes, inks, glass frits
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Manufacturing & Machinery (AREA)
- Compositions Of Oxide Ceramics (AREA)
- Thermistors And Varistors (AREA)
- Apparatuses And Processes For Manufacturing Resistors (AREA)
Description
I=(V/C)α
次に、ZnO素子について、以下に示すように比較例の試料P1,P2と実施例の試料S1,S2を作製し、それら試料の特性をそれぞれ調べた。
42…スピネル相
43…気孔
44…電流経路
Claims (1)
- 酸化亜鉛と複数の添加物成分が含まれるスラリーを乾燥成形した後、焼結する非直線抵抗体素子の製造方法であって、
複数の添加物成分は、ビスマス,マンガン,アンチモン,クロム,珪素,ニッケル,コバルトが含まれ、
ニッケル,コバルトのうち少なくとも何れか一方は、スルファミン酸塩またはスルホン酸塩を水に溶解して得た金属塩水溶液を添加することにより含まれたものであって、非直線抵抗体素子の0.5モル%〜3.0モル%含まれたものであることを特徴とする非直線抵抗体素子の製造方法。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011273173A JP5929152B2 (ja) | 2011-12-14 | 2011-12-14 | 非直線抵抗体素子の製造方法 |
PCT/JP2012/077936 WO2013088847A1 (ja) | 2011-12-14 | 2012-10-30 | 非直線抵抗体素子の製造方法 |
CN201280061935.XA CN103999169B (zh) | 2011-12-14 | 2012-10-30 | 非线性电阻元件的制造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011273173A JP5929152B2 (ja) | 2011-12-14 | 2011-12-14 | 非直線抵抗体素子の製造方法 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2013125821A JP2013125821A (ja) | 2013-06-24 |
JP2013125821A5 JP2013125821A5 (ja) | 2014-11-13 |
JP5929152B2 true JP5929152B2 (ja) | 2016-06-01 |
Family
ID=48612304
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2011273173A Expired - Fee Related JP5929152B2 (ja) | 2011-12-14 | 2011-12-14 | 非直線抵抗体素子の製造方法 |
Country Status (3)
Country | Link |
---|---|
JP (1) | JP5929152B2 (ja) |
CN (1) | CN103999169B (ja) |
WO (1) | WO2013088847A1 (ja) |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5811084B2 (ja) * | 1977-12-28 | 1983-03-01 | 株式会社明電舎 | 電圧非直線抵抗体 |
JPS60928B2 (ja) * | 1980-01-18 | 1985-01-11 | 松下電器産業株式会社 | 電圧非直線抵抗器の製造方法 |
JPS59903A (ja) * | 1982-06-25 | 1984-01-06 | 株式会社東芝 | 電圧非直線抵抗体 |
JPS5968906A (ja) * | 1982-10-13 | 1984-04-19 | 三菱電機株式会社 | 電圧非直線抵抗体の製造方法 |
JPH0283902A (ja) * | 1988-09-21 | 1990-03-26 | Meidensha Corp | 電圧非直線抵抗体と製造方法 |
CN1046053C (zh) * | 1997-06-18 | 1999-10-27 | 中国科学院新疆物理研究所 | 微型压敏电阻芯片的制造方法 |
CN1061638C (zh) * | 1997-06-18 | 2001-02-07 | 中国科学院新疆物理研究所 | 一种多元纳米电压敏粉体材料及其制造方法 |
-
2011
- 2011-12-14 JP JP2011273173A patent/JP5929152B2/ja not_active Expired - Fee Related
-
2012
- 2012-10-30 WO PCT/JP2012/077936 patent/WO2013088847A1/ja active Application Filing
- 2012-10-30 CN CN201280061935.XA patent/CN103999169B/zh active Active
Also Published As
Publication number | Publication date |
---|---|
WO2013088847A1 (ja) | 2013-06-20 |
CN103999169A (zh) | 2014-08-20 |
JP2013125821A (ja) | 2013-06-24 |
CN103999169B (zh) | 2016-12-28 |
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