JP2014192369A5 - - Google Patents

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JP2014192369A5
JP2014192369A5 JP2013067014A JP2013067014A JP2014192369A5 JP 2014192369 A5 JP2014192369 A5 JP 2014192369A5 JP 2013067014 A JP2013067014 A JP 2013067014A JP 2013067014 A JP2013067014 A JP 2013067014A JP 2014192369 A5 JP2014192369 A5 JP 2014192369A5
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Japan
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chamber
film
mesa structure
amorphous
forming
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JP2013067014A
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Japanese (ja)
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JP6123414B2 (ja
JP2014192369A (ja
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JP2013067014A 2013-03-27 2013-03-27 半導体素子の製造方法、半導体素子の製造装置 Active JP6123414B2 (ja)

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Application Number Priority Date Filing Date Title
JP2013067014A JP6123414B2 (ja) 2013-03-27 2013-03-27 半導体素子の製造方法、半導体素子の製造装置

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Application Number Priority Date Filing Date Title
JP2013067014A JP6123414B2 (ja) 2013-03-27 2013-03-27 半導体素子の製造方法、半導体素子の製造装置

Publications (3)

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JP2014192369A JP2014192369A (ja) 2014-10-06
JP2014192369A5 true JP2014192369A5 (enExample) 2016-02-18
JP6123414B2 JP6123414B2 (ja) 2017-05-10

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JP2013067014A Active JP6123414B2 (ja) 2013-03-27 2013-03-27 半導体素子の製造方法、半導体素子の製造装置

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JP (1) JP6123414B2 (enExample)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7080414B1 (ja) * 2021-06-17 2022-06-03 三菱電機株式会社 光半導体素子及びその製造方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06291032A (ja) * 1993-04-06 1994-10-18 Matsushita Electric Ind Co Ltd 化合物半導体成長用基板
JP3330218B2 (ja) * 1994-03-25 2002-09-30 三菱電機株式会社 半導体装置の製造方法，及び半導体装置
JP2858095B2 (ja) * 1995-03-22 1999-02-17 光技術研究開発株式会社 化合物半導体の微細埋込構造の形成方法
JPH09205254A (ja) * 1996-01-26 1997-08-05 Mitsubishi Electric Corp 半導体装置の製造方法および半導体製造装置並びに半導体レーザの製造方法
JPH09260289A (ja) * 1996-03-19 1997-10-03 Nippon Steel Corp 化合物半導体単結晶の成長方法
JP4864014B2 (ja) * 2001-03-27 2012-01-25 株式会社リコー 面発光型半導体レーザ素子の製造方法

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