JP2014187181A - 半導体装置及びその製造方法 - Google Patents

半導体装置及びその製造方法 Download PDF

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Publication number
JP2014187181A
JP2014187181A JP2013061045A JP2013061045A JP2014187181A JP 2014187181 A JP2014187181 A JP 2014187181A JP 2013061045 A JP2013061045 A JP 2013061045A JP 2013061045 A JP2013061045 A JP 2013061045A JP 2014187181 A JP2014187181 A JP 2014187181A
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JP
Japan
Prior art keywords
insulating layer
layer
semiconductor
semiconductor device
gate electrode
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Pending
Application number
JP2013061045A
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English (en)
Japanese (ja)
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JP2014187181A5 (enExample
Inventor
Shintaro Nakano
慎太郎 中野
Tomomasa Ueda
知正 上田
Ikuo Fujiwara
郁夫 藤原
Hajime Yamaguchi
一 山口
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Toshiba Corp
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Toshiba Corp
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Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP2013061045A priority Critical patent/JP2014187181A/ja
Priority to US14/173,028 priority patent/US20140284593A1/en
Priority to EP14154293.6A priority patent/EP2782138A3/en
Priority to TW103104257A priority patent/TW201501326A/zh
Priority to KR1020140024529A priority patent/KR20140115969A/ko
Priority to CN201410074863.3A priority patent/CN104064537A/zh
Publication of JP2014187181A publication Critical patent/JP2014187181A/ja
Publication of JP2014187181A5 publication Critical patent/JP2014187181A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6733—Multi-gate TFTs
    • H10D30/6734—Multi-gate TFTs having gate electrodes arranged on both top and bottom sides of the channel, e.g. dual-gate TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
    • H10D30/6739—Conductor-insulator-semiconductor electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/514—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the insulating layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
    • H10D86/423—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices

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  • Thin Film Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP2013061045A 2013-03-22 2013-03-22 半導体装置及びその製造方法 Pending JP2014187181A (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2013061045A JP2014187181A (ja) 2013-03-22 2013-03-22 半導体装置及びその製造方法
US14/173,028 US20140284593A1 (en) 2013-03-22 2014-02-05 Semiconductor device and method for manufacturing the same
EP14154293.6A EP2782138A3 (en) 2013-03-22 2014-02-07 Semiconductor device and method for manufacturing the same
TW103104257A TW201501326A (zh) 2013-03-22 2014-02-10 半導體裝置及其製造方法
KR1020140024529A KR20140115969A (ko) 2013-03-22 2014-02-28 반도체 장치 및 그 제조 방법
CN201410074863.3A CN104064537A (zh) 2013-03-22 2014-03-03 半导体器件及其制造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2013061045A JP2014187181A (ja) 2013-03-22 2013-03-22 半導体装置及びその製造方法

Publications (2)

Publication Number Publication Date
JP2014187181A true JP2014187181A (ja) 2014-10-02
JP2014187181A5 JP2014187181A5 (enExample) 2014-11-13

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Family Applications (1)

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JP2013061045A Pending JP2014187181A (ja) 2013-03-22 2013-03-22 半導体装置及びその製造方法

Country Status (6)

Country Link
US (1) US20140284593A1 (enExample)
EP (1) EP2782138A3 (enExample)
JP (1) JP2014187181A (enExample)
KR (1) KR20140115969A (enExample)
CN (1) CN104064537A (enExample)
TW (1) TW201501326A (enExample)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016167060A (ja) * 2015-03-03 2016-09-15 群創光電股▲ふん▼有限公司Ｉｎｎｏｌｕｘ Ｃｏｒｐｏｒａｔｉｏｎ 表示パネル及び表示装置
JP2017120904A (ja) * 2015-12-28 2017-07-06 株式会社半導体エネルギー研究所 電極、半導体装置、半導体ウエハー、モジュールおよび電子機器とその作製方法
JP2019091902A (ja) * 2015-01-26 2019-06-13 株式会社半導体エネルギー研究所 半導体装置
JP2020102649A (ja) * 2015-03-13 2020-07-02 株式会社半導体エネルギー研究所 半導体装置
JP2021119600A (ja) * 2015-02-20 2021-08-12 株式会社半導体エネルギー研究所 半導体装置
JP2023071789A (ja) * 2015-03-30 2023-05-23 株式会社半導体エネルギー研究所 半導体装置の作製方法

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201611298A (zh) * 2014-09-12 2016-03-16 中華映管股份有限公司 雙薄膜電晶體及其製造方法
US11257929B2 (en) * 2015-12-18 2022-02-22 Intel Corporation Stacked transistors
JP2018157101A (ja) * 2017-03-17 2018-10-04 東芝メモリ株式会社 トランジスタ、メモリ及びトランジスタの製造方法
CN108198864B (zh) * 2018-01-05 2021-12-03 京东方科技集团股份有限公司 薄膜晶体管及其制作方法、阵列基板和显示装置
KR20210133524A (ko) 2020-04-29 2021-11-08 삼성전자주식회사 배선 구조체 및 이를 포함하는 반도체 패키지

Citations (9)

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JP2010141230A (ja) * 2008-12-15 2010-06-24 Renesas Electronics Corp 半導体装置及び半導体装置の製造方法
JP2012028731A (ja) * 2010-06-22 2012-02-09 Renesas Electronics Corp 半導体装置、及び、半導体装置の製造方法
JP2012151460A (ja) * 2010-12-28 2012-08-09 Semiconductor Energy Lab Co Ltd 半導体装置、及び半導体装置の作製方法
JP2012151454A (ja) * 2010-12-28 2012-08-09 Semiconductor Energy Lab Co Ltd 半導体装置
JP2012151455A (ja) * 2010-12-28 2012-08-09 Semiconductor Energy Lab Co Ltd 半導体装置
JP2012151461A (ja) * 2010-12-28 2012-08-09 Semiconductor Energy Lab Co Ltd 半導体装置、及び半導体装置の作製方法
WO2012121255A1 (ja) * 2011-03-09 2012-09-13 ルネサスエレクトロニクス株式会社 半導体装置
JP2012257191A (ja) * 2010-11-30 2012-12-27 Semiconductor Energy Lab Co Ltd フォトセンサの駆動方法、半導体装置の駆動方法、半導体装置、及び電子機器
JP2013038349A (ja) * 2011-08-10 2013-02-21 Renesas Electronics Corp 半導体装置及び半導体装置の製造方法

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20110037220A (ko) * 2009-10-06 2011-04-13 삼성모바일디스플레이주식회사 박막 트랜지스터, 그의 제조 방법 및 박막 트랜지스터를 구비하는 유기전계발광 표시 장치
JP5731904B2 (ja) * 2011-05-25 2015-06-10 ルネサスエレクトロニクス株式会社 半導体装置及び半導体装置の製造方法

Patent Citations (9)

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Publication number Priority date Publication date Assignee Title
JP2010141230A (ja) * 2008-12-15 2010-06-24 Renesas Electronics Corp 半導体装置及び半導体装置の製造方法
JP2012028731A (ja) * 2010-06-22 2012-02-09 Renesas Electronics Corp 半導体装置、及び、半導体装置の製造方法
JP2012257191A (ja) * 2010-11-30 2012-12-27 Semiconductor Energy Lab Co Ltd フォトセンサの駆動方法、半導体装置の駆動方法、半導体装置、及び電子機器
JP2012151460A (ja) * 2010-12-28 2012-08-09 Semiconductor Energy Lab Co Ltd 半導体装置、及び半導体装置の作製方法
JP2012151454A (ja) * 2010-12-28 2012-08-09 Semiconductor Energy Lab Co Ltd 半導体装置
JP2012151455A (ja) * 2010-12-28 2012-08-09 Semiconductor Energy Lab Co Ltd 半導体装置
JP2012151461A (ja) * 2010-12-28 2012-08-09 Semiconductor Energy Lab Co Ltd 半導体装置、及び半導体装置の作製方法
WO2012121255A1 (ja) * 2011-03-09 2012-09-13 ルネサスエレクトロニクス株式会社 半導体装置
JP2013038349A (ja) * 2011-08-10 2013-02-21 Renesas Electronics Corp 半導体装置及び半導体装置の製造方法

Cited By (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11245039B2 (en) 2015-01-26 2022-02-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US12074224B2 (en) 2015-01-26 2024-08-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
JP2019091902A (ja) * 2015-01-26 2019-06-13 株式会社半導体エネルギー研究所 半導体装置
JP7090769B2 (ja) 2015-02-20 2022-06-24 株式会社半導体エネルギー研究所 半導体装置
JP2021119600A (ja) * 2015-02-20 2021-08-12 株式会社半導体エネルギー研究所 半導体装置
JP2016167060A (ja) * 2015-03-03 2016-09-15 群創光電股▲ふん▼有限公司Ｉｎｎｏｌｕｘ Ｃｏｒｐｏｒａｔｉｏｎ 表示パネル及び表示装置
JP2020102649A (ja) * 2015-03-13 2020-07-02 株式会社半導体エネルギー研究所 半導体装置
JP2023071789A (ja) * 2015-03-30 2023-05-23 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP7433489B2 (ja) 2015-03-30 2024-02-19 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP2024059664A (ja) * 2015-03-30 2024-05-01 株式会社半導体エネルギー研究所 半導体装置
JP7669544B2 (ja) 2015-03-30 2025-04-28 株式会社半導体エネルギー研究所 半導体装置
US12364041B2 (en) 2015-03-30 2025-07-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising transistor
JP2021093554A (ja) * 2015-12-28 2021-06-17 株式会社半導体エネルギー研究所 半導体装置
JP7133056B2 (ja) 2015-12-28 2022-09-07 株式会社半導体エネルギー研究所 半導体装置
JP2017120904A (ja) * 2015-12-28 2017-07-06 株式会社半導体エネルギー研究所 電極、半導体装置、半導体ウエハー、モジュールおよび電子機器とその作製方法

Also Published As

Publication number Publication date
TW201501326A (zh) 2015-01-01
CN104064537A (zh) 2014-09-24
EP2782138A2 (en) 2014-09-24
KR20140115969A (ko) 2014-10-01
US20140284593A1 (en) 2014-09-25
EP2782138A3 (en) 2014-12-24

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