CN104064537A - 半导体器件及其制造方法 - Google Patents

半导体器件及其制造方法 Download PDF

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Publication number
CN104064537A
CN104064537A CN201410074863.3A CN201410074863A CN104064537A CN 104064537 A CN104064537 A CN 104064537A CN 201410074863 A CN201410074863 A CN 201410074863A CN 104064537 A CN104064537 A CN 104064537A
Authority
CN
China
Prior art keywords
insulating barrier
layer
insulating layer
semiconductor layer
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201410074863.3A
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English (en)
Chinese (zh)
Inventor
中野慎太郎
上田知正
藤原郁夫
山口�一
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Publication of CN104064537A publication Critical patent/CN104064537A/zh
Pending legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6733—Multi-gate TFTs
    • H10D30/6734—Multi-gate TFTs having gate electrodes arranged on both top and bottom sides of the channel, e.g. dual-gate TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
    • H10D30/6739—Conductor-insulator-semiconductor electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/514—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the insulating layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
    • H10D86/423—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices

Landscapes

  • Thin Film Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
CN201410074863.3A 2013-03-22 2014-03-03 半导体器件及其制造方法 Pending CN104064537A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2013-061045 2013-03-22
JP2013061045A JP2014187181A (ja) 2013-03-22 2013-03-22 半導体装置及びその製造方法

Publications (1)

Publication Number Publication Date
CN104064537A true CN104064537A (zh) 2014-09-24

Family

ID=50064503

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201410074863.3A Pending CN104064537A (zh) 2013-03-22 2014-03-03 半导体器件及其制造方法

Country Status (6)

Country Link
US (1) US20140284593A1 (enExample)
EP (1) EP2782138A3 (enExample)
JP (1) JP2014187181A (enExample)
KR (1) KR20140115969A (enExample)
CN (1) CN104064537A (enExample)
TW (1) TW201501326A (enExample)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201611298A (zh) * 2014-09-12 2016-03-16 中華映管股份有限公司 雙薄膜電晶體及其製造方法
US9954112B2 (en) 2015-01-26 2018-04-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US10403646B2 (en) * 2015-02-20 2019-09-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
TWI540371B (zh) * 2015-03-03 2016-07-01 群創光電股份有限公司 顯示面板及顯示裝置
US9905700B2 (en) * 2015-03-13 2018-02-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device or memory device and driving method thereof
TW202316486A (zh) * 2015-03-30 2023-04-16 日商半導體能源研究所股份有限公司 半導體裝置的製造方法
WO2017105515A1 (en) * 2015-12-18 2017-06-22 Intel Corporation Stacked transistors
JP6853663B2 (ja) * 2015-12-28 2021-03-31 株式会社半導体エネルギー研究所 半導体装置
JP2018157101A (ja) 2017-03-17 2018-10-04 東芝メモリ株式会社 トランジスタ、メモリ及びトランジスタの製造方法
CN108198864B (zh) * 2018-01-05 2021-12-03 京东方科技集团股份有限公司 薄膜晶体管及其制作方法、阵列基板和显示装置
KR20210133524A (ko) 2020-04-29 2021-11-08 삼성전자주식회사 배선 구조체 및 이를 포함하는 반도체 패키지

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5781720B2 (ja) * 2008-12-15 2015-09-24 ルネサスエレクトロニクス株式会社 半導体装置及び半導体装置の製造方法
KR20110037220A (ko) * 2009-10-06 2011-04-13 삼성모바일디스플레이주식회사 박막 트랜지스터, 그의 제조 방법 및 박막 트랜지스터를 구비하는 유기전계발광 표시 장치
JP5705559B2 (ja) * 2010-06-22 2015-04-22 ルネサスエレクトロニクス株式会社 半導体装置、及び、半導体装置の製造方法
US9103724B2 (en) * 2010-11-30 2015-08-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising photosensor comprising oxide semiconductor, method for driving the semiconductor device, method for driving the photosensor, and electronic device
US9443984B2 (en) * 2010-12-28 2016-09-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
WO2012090799A1 (en) * 2010-12-28 2012-07-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US8883556B2 (en) * 2010-12-28 2014-11-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US8941112B2 (en) * 2010-12-28 2015-01-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US9263399B2 (en) * 2011-03-09 2016-02-16 Renesas Electronics Corporation Semiconductor device with electro-static discharge protection device above semiconductor device area
JP5731904B2 (ja) * 2011-05-25 2015-06-10 ルネサスエレクトロニクス株式会社 半導体装置及び半導体装置の製造方法
JP5876249B2 (ja) * 2011-08-10 2016-03-02 ルネサスエレクトロニクス株式会社 半導体装置及び半導体装置の製造方法

Also Published As

Publication number Publication date
TW201501326A (zh) 2015-01-01
EP2782138A3 (en) 2014-12-24
KR20140115969A (ko) 2014-10-01
JP2014187181A (ja) 2014-10-02
US20140284593A1 (en) 2014-09-25
EP2782138A2 (en) 2014-09-24

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Application publication date: 20140924