JP2013098541A - 強化された銅−銅接合を有する三次元(3d)集積回路およびその形成方法 - Google Patents
強化された銅−銅接合を有する三次元(3d)集積回路およびその形成方法 Download PDFInfo
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Abstract
【解決手段】第一デバイス・ウエハの少なくともCu表面上に少なくとも一つの金属接着層が形成される。別のCu表面を有する第二デバイス・ウエハが、第一デバイス・ウエハのCu表面の上で且つ少なくとも一つの金属接着層上に位置付けられる。次いで、第一および第二デバイス・ウエハが共に接合される。この接合ステップは、外部から加える圧力の使用の有無にかかわらず、これらデバイス・ウエハを400℃未満の温度に加熱するステップを含む。加熱の過程で、2つのCu表面は共に接合され、該少なくとも一つの金属接着層が2つのCu表面から酸素原子を得て、これらCu表面の間に少なくとも一つの金属酸化物接合層を形成する。
【選択図】図6
Description
14 絶縁領域
16L ソース/ドレイン領域
16R ソース/ドレイン領域
20 ゲート誘電体
22 ゲート導体
24 スペーサ
26 相互接続レベル
27 相互接続誘電体材料
28L 導電機能
28R 導電機能
29 ビア
30 パターン取りされたCu接合パッド
32 金属接着層
52 半導体基板
52A 絶縁体層
52B 半導体デバイス層
54 絶縁領域
56L ソース/ドレイン領域
56R ソース/ドレイン領域
60 ゲート誘電体
62 ゲート導体
63 スペーサ
64 相互接続レベル
65 相互接続誘電体材料
66L 導電機能
66R 導電機能
70 スルー・ビア
72 Cu接合パッド
74 金属酸化物接合層
Claims (25)
- 三次元(3D)集積回路を形成する方法であって、前記方法は、
Cu表面を含む第一デバイス・ウエハを用意するステップと、
前記第一デバイス・ウエハの少なくとも前記Cu表面上に金属接着層を形成するステップと、
別のCu表面を含む第二デバイス・ウエハを、前記第一デバイス・ウエハの前記金属接着層上で且つ前記Cu表面の上に位置付けるステップと、
前記第一および第二デバイス・ウエハを400℃未満の温度で共に接合するステップと、
を含み、
前記金属接着層は、前記の2つのCu表面から酸素原子を得て、前記第一デバイス・ウエハの前記Cu表面と前記第二デバイス・ウエハの前記別のCu表面との間に金属酸化物接合層を形成する、
前記方法。 - 前記第一デバイス・ウエハの前記Cu表面および前記第二デバイス・ウエハの前記別のCu表面はCu接合パッドであり、各Cu接合パッドはパターン取りされている、請求項1に記載の方法。
- 前記第一デバイス・ウエハの前記Cu表面および前記第二デバイス・ウエハの前記別のCu表面はCu接合パッドであり、各Cu接合パッドはパターン取りされていない、請求項1に記載の方法。
- 前記金属接着層を前記形成するステップは、非選択的堆積処理を含む、請求項1に記載の方法。
- 前記金属接着層を前記形成するステップは、選択的堆積処理を含む、請求項1に記載の方法。
- 前記金属接着層を前記形成するステップは、Mn、Ta、Ti、Co、W、Ru、Ni、またはMn、Ta、Ti、Co、W、Ru、およびNiから選択された2つ以上の金属の組み合わせを含む合金、の少なくとも一つを選択するステップを含む、請求項1に記載の方法。
- 前記金属酸化物接合層は、前記各Cu接合パッドの側壁と垂直的に一致する、請求項2に記載の方法。
- 前記第一デバイス・ウエハは電界効果トランジスタを含み、前記第二デバイス・ウエハは別の電界効果トランジスタを含む、請求項1に記載の方法。
- 前記少なくとも一つのCu表面は、相互接続レベルの最上面の上に配置され、前記相互接続レベルは、複数の導電機能が中に配置されている少なくとも一つの相互接続誘電体材料を含み、前記導電機能の少なくとも一つは、前記第一デバイス・ウエハの前記Cu表面の最底部と接触している、請求項1に記載の方法。
- 接合ステップの前に、前記デバイス・ウエハの少なくとも一つを反転するステップをさらに含む、請求項1に記載の方法。
- 前記金属接着層の一部が、前記デバイス・ウエハの少なくとも一つの上に残存する、請求項1に記載の方法。
- 前記金属接着層が多層構造体を含み、前記金属酸化物接合層が多層構造体を含む、請求項1に記載の方法。
- Cu表面を含む第一デバイス・ウエハと、別のCu表面を含む第二デバイス・ウエハとの垂直スタックであって、金属酸化物接合層が、前記第一デバイス・ウエハの前記Cu表面と前記第二デバイス・ウエハの前記別のCu表面との間に配置される、前記垂直スタック、
を含む三次元(3D)集積回路。 - 前記第一デバイス・ウエハの前記Cu表面および前記第二デバイス・ウエハの前記別のCu表面はCu接合パッドであり、各Cu接合パッドはパターン取りされている、請求項13に記載の3D集積回路。
- 前記第一デバイス・ウエハの前記Cu表面および前記第二デバイス・ウエハの前記別のCu表面はCu接合パッドであり、各Cu接合パッドはパターン取りされていない、請求項13に記載の3D集積回路。
- 前記金属酸化物接合層は、前記Cu接合パッドの各々の側壁と垂直的に一致する、請求項13に記載の3D集積回路。
- 金属接着層の一部が、前記デバイス・ウエハの少なくとも一つの上に残存する、請求項13に記載の3D集積回路。
- 前記金属接着層は、Mn、Ti、Ta、Co、W、Ru、およびNi、またはMn、Ta、Ti、Co、W、Ru、およびNiから選択された2つ以上の金属の組み合わせを含む合金、の一つを含む、請求項17に記載の3D集積回路。
- 前記金属酸化物接合層は、Mn、Ti、Ta、Co、W、Ru、およびNi、またはMn、Ta、Ti、Co、W、Ru、およびNiから選択された2つ以上の金属の組み合わせを含む合金、の少なくとも一つの酸化物を含む、請求項13に記載の3D集積回路。
- 前記第一デバイス・ウエハは電界効果トランジスタを含み、前記第二デバイス・ウエハは別の電界効果トランジスタを含む、請求項13に記載の3D集積回路。
- 少なくとも一つのCu表面は、相互接続レベルの最上面の上に配置され、前記相互接続レベルは、複数の導電機能が中に配置されている少なくとも一つの相互接続誘電体材料を含み、前記導電機能の少なくとも一つは、前記第一デバイス・ウエハの前記Cu表面の最底部と接触している、請求項13に記載の3D集積回路。
- 前記第一デバイス・ウエハは、少なくとも一つのデバイスが中に少なくとも部分的に配置されている半導体基板と、前記半導体基板の上に配置された相互接続レベルとを含み、前記相互接続レベルは、少なくとも一つの相互接続誘電体材料内に内蔵された複数の導電機能を含み、導電領域が前記複数の導電機能の一つを前記Cu表面に接続している、請求項13に記載の3D集積回路。
- 前記第二デバイス・ウエハは、底部から最上部に向けて、絶縁体層と、半導体デバイス層と、前記半導体デバイス層に少なくとも部分的に配置された少なくとも一つ他のデバイスと、別の相互接続レベルとを含み、前記別の相互接続レベルは、少なくとも一つの他の相互接続誘電体材料内に内蔵された複数の他の導電機能を含み、スルー・ビアが、前記他の導電機能の少なくとも一つを前記別のCu表面の最底部に接続しており、前記第一デバイス・ウエハの前記Cu表面および前記第二デバイス・ウエハの前記別のCu表面はパターン取りされたCu接合パッドである、請求項22に記載の3D集積回路。
- 前記第二デバイス・ウエハは、少なくとも一つの他のデバイスが中に少なくとも部分的に配置されている別の半導体基板と、前記別の半導体基板の上に配置された別の相互接続レベルとを含み、前記別の相互接続レベルは、少なくとも一つの他の相互接続誘電体材料内に内蔵された複数の他の導電機能を含み、前記別の半導体基板は前記少なくとも一つの他のデバイスの上に配置され、前記第一デバイス・ウエハの前記Cu表面および前記第二デバイス・ウエハの前記別のCu表面はパターン取りされたCu接合パッドである、請求項22に記載の3D集積回路。
- 前記金属接着層が多層構造体であり、前記金属酸化物接合層が多層構造体である、請求項17に記載の3D集積回路。
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US8431436B1 (en) | 2013-04-30 |
CN103094138B (zh) | 2015-07-22 |
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US8546956B2 (en) | 2013-10-01 |
US20130200520A1 (en) | 2013-08-08 |
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US20130113106A1 (en) | 2013-05-09 |
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