JP2016167060A - 表示パネル及び表示装置 - Google Patents
表示パネル及び表示装置 Download PDFInfo
- Publication number
- JP2016167060A JP2016167060A JP2016039775A JP2016039775A JP2016167060A JP 2016167060 A JP2016167060 A JP 2016167060A JP 2016039775 A JP2016039775 A JP 2016039775A JP 2016039775 A JP2016039775 A JP 2016039775A JP 2016167060 A JP2016167060 A JP 2016167060A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- metal oxide
- thin film
- display panel
- film transistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000010410 layer Substances 0.000 claims abstract description 206
- 229910044991 metal oxide Inorganic materials 0.000 claims abstract description 90
- 150000004706 metal oxides Chemical class 0.000 claims abstract description 90
- 239000000758 substrate Substances 0.000 claims abstract description 64
- 239000010409 thin film Substances 0.000 claims abstract description 63
- 239000011241 protective layer Substances 0.000 claims abstract description 53
- 239000000463 material Substances 0.000 claims description 20
- 239000004065 semiconductor Substances 0.000 claims description 14
- 229910052751 metal Inorganic materials 0.000 description 15
- 239000002184 metal Substances 0.000 description 15
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 10
- 239000004973 liquid crystal related substance Substances 0.000 description 8
- 238000000034 method Methods 0.000 description 8
- 238000002161 passivation Methods 0.000 description 8
- 229910052814 silicon oxide Inorganic materials 0.000 description 7
- 230000000694 effects Effects 0.000 description 5
- 229910010272 inorganic material Inorganic materials 0.000 description 4
- 239000011147 inorganic material Substances 0.000 description 4
- 239000002356 single layer Substances 0.000 description 4
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 229910052733 gallium Inorganic materials 0.000 description 3
- 229910052738 indium Inorganic materials 0.000 description 3
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 3
- 238000009434 installation Methods 0.000 description 3
- 229910052750 molybdenum Inorganic materials 0.000 description 3
- 239000011733 molybdenum Substances 0.000 description 3
- 239000011368 organic material Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 235000012239 silicon dioxide Nutrition 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 2
- 230000002411 adverse Effects 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- JAONJTDQXUSBGG-UHFFFAOYSA-N dialuminum;dizinc;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Al+3].[Al+3].[Zn+2].[Zn+2] JAONJTDQXUSBGG-UHFFFAOYSA-N 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 229910000449 hafnium oxide Inorganic materials 0.000 description 2
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- 239000004033 plastic Substances 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- -1 silicon oxide compound Chemical class 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 229910052725 zinc Inorganic materials 0.000 description 2
- 239000011701 zinc Substances 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- GPBUGPUPKAGMDK-UHFFFAOYSA-N azanylidynemolybdenum Chemical compound [Mo]#N GPBUGPUPKAGMDK-UHFFFAOYSA-N 0.000 description 1
- HEQWUWZWGPCGCD-UHFFFAOYSA-N cadmium(2+) oxygen(2-) tin(4+) Chemical compound [O--].[O--].[O--].[Cd++].[Sn+4] HEQWUWZWGPCGCD-UHFFFAOYSA-N 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- GPRLSGONYQIRFK-UHFFFAOYSA-N hydron Chemical compound [H+] GPRLSGONYQIRFK-UHFFFAOYSA-N 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical group [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000010849 ion bombardment Methods 0.000 description 1
- 235000015110 jellies Nutrition 0.000 description 1
- 239000008274 jelly Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- OFIYHXOOOISSDN-UHFFFAOYSA-N tellanylidenegallium Chemical compound [Te]=[Ga] OFIYHXOOOISSDN-UHFFFAOYSA-N 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1222—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
- H01L27/1225—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78696—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Liquid Crystal (AREA)
- Thin Film Transistor (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
Description
11:薄膜トランジスタ基板
111:基板
12:対向基板
13:表示媒質層
2:表示装置
4:バックライトモジュール
A:金属酸化物層
B:バッファ層
C:チャネル層
C1:チャネルエリア
C2:導電エリア
D:ドレイン
d1:第1厚さ
d2:第2厚さ
DL:データライン
E:光線
G:ゲート
H:開口部
I:誘電体層
O:通孔
P:保護層
PAS:パッシベーション層
PE:第1電極
S:ソース
s1:第1側辺
s2:第2側辺
T、Tc:薄膜トランジスタ
Claims (10)
- 薄膜トランジスタと基板を備えた薄膜トランジスタ基板と、
前記薄膜トランジスタ基板上に設置される表示媒質層とを備え、
前記薄膜トランジスタは前記基板上に設置され、且つゲートと、金属酸化物層と、ソースと、ドレイン及び保護層とを備え、
前記ゲートと前記金属酸化物層は対向設置され、
前記保護層は前記金属酸化物層上に設置され、
前記ソースと前記ドレインはそれぞれ前記保護層の開口部を通じて前記金属酸化物層に接続され、
且つ前記ゲート、または前記金属酸化物層の側辺の一部は、複数の前記開口部のうちの少なくとも1つに重なるように設置されること、
を特徴とする表示パネル。 - 前記金属酸化物層は、前記薄膜トランジスタのチャネル層であり、前記ゲートと前記チャネル層との間には誘電体層を有し、前記チャネル層の材料は金属酸化物半導体であることを特徴とする請求項1に記載の表示パネル。
- 前記ソース、または前記ドレインは前記複数の開口部のうちの1つ内に設置され、且つ前記誘電体層、または前記チャネル層に接続されることを特徴とする請求項2に記載の表示パネル。
- 前記ゲートは対向する2つの第1側辺を備え、且つ前記複数の第1側辺の一部はそれぞれ前記保護層の2つの前記開口部に重なることを特徴とする請求項1に記載の表示パネル。
- 前記金属酸化物層は、前記薄膜トランジスタのチャネル層であり、且つ対向する2つの第2側辺を備え、前記複数の第2側辺の一部はそれぞれ前記保護層の2つの前記開口部に重なることを特徴とする請求項1に記載の表示パネル。
- 前記ゲートは対向する2つの第1側辺を備え、前記金属酸化物層は、前記薄膜トランジスタのチャネル層であり、且つ2つの対向する第2側辺を備え、前記複数の第1側辺の一部と前記複数の第2側辺の一部はそれぞれ前記保護層の2つの前記開口部に重なることを特徴とする請求項1に記載の表示パネル。
- 前記複数の開口部のうちの1つ内に位置する前記誘電体層は第1厚さを備え、前記チャネル層と前記ゲートとの間に位置する前記誘電体層は第2厚さを備え、前記第2厚さと前記第1厚さの差は、ゼロより大きいか等しく且つ3000Å未満であり、または、ゼロより大きいか等しく且つ前記保護層の厚さより小さいことを特徴とする請求項2に記載の表示パネル。
- 前記金属酸化物層は、バッファ層を介して前記基板上に設置され、前記金属酸化物層はチャネルエリアを有し、前記ゲートは誘電体層を介して前記チャネルエリア上に設置され、且つ前記チャネルエリアの材料は金属酸化物半導体であることを特徴とする請求項1に記載の表示パネル。
- 前記金属酸化物層は、更に、前記チャネルエリアの両側に位置する2つの導電エリアを備え、前記ソース、または前記ドレインは、前記複数の開口部のうちの1つ内に設置され、且つ前記バッファ層と前記複数の導電エリアのうちの1つに接続することを特徴とする請求項8に記載の表示パネル。
- 薄膜トランジスタ基板と表示媒質層を備えた表示パネルと、
表示パネルに対向設置されるバックライトモジュールとを備え、
前記表示媒質層は前記薄膜トランジスタ基板上に設置され、
前記薄膜トランジスタ基板は薄膜トランジスタと基板を備え、
前記薄膜トランジスタは前記基板上に設置され、且つゲートと、金属酸化物層と、ソースとドレイン及び保護層を備え、
前記ゲートと前記金属酸化物層は対向設置され、
前記保護層は前記金属酸化物層上に設置され、
前記ソースと前記ドレインはそれぞれ前記保護層の開口部を通じて前記金属酸化物層に接続され、
且つ前記ゲート、または前記金属酸化物層の側辺の一部は、複数の前記開口部のうちの少なくとも1つに重なるように設置されること
を特徴とする表示装置。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW104106690A TWI540371B (zh) | 2015-03-03 | 2015-03-03 | 顯示面板及顯示裝置 |
TW104106690 | 2015-03-03 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2016167060A true JP2016167060A (ja) | 2016-09-15 |
JP6850540B2 JP6850540B2 (ja) | 2021-03-31 |
Family
ID=56850748
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2016039775A Active JP6850540B2 (ja) | 2015-03-03 | 2016-03-02 | 表示パネル及び表示装置 |
Country Status (3)
Country | Link |
---|---|
US (1) | US9653482B2 (ja) |
JP (1) | JP6850540B2 (ja) |
TW (1) | TWI540371B (ja) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2019195428A1 (en) | 2018-04-04 | 2019-10-10 | Qorvo Us, Inc. | Gallium-nitride-based module with enhanced electrical performance and process for making the same |
US12046505B2 (en) | 2018-04-20 | 2024-07-23 | Qorvo Us, Inc. | RF devices with enhanced performance and methods of forming the same utilizing localized SOI formation |
WO2020009759A1 (en) | 2018-07-02 | 2020-01-09 | Qorvo Us, Inc. | Rf semiconductor device and manufacturing method thereof |
US10964554B2 (en) * | 2018-10-10 | 2021-03-30 | Qorvo Us, Inc. | Wafer-level fan-out package with enhanced performance |
US12046483B2 (en) | 2019-01-23 | 2024-07-23 | Qorvo Us, Inc. | RF devices with enhanced performance and methods of forming the same |
CN113632209A (zh) | 2019-01-23 | 2021-11-09 | Qorvo美国公司 | Rf半导体装置和其制造方法 |
US12057374B2 (en) | 2019-01-23 | 2024-08-06 | Qorvo Us, Inc. | RF devices with enhanced performance and methods of forming the same |
US12046570B2 (en) | 2019-01-23 | 2024-07-23 | Qorvo Us, Inc. | RF devices with enhanced performance and methods of forming the same |
US12074086B2 (en) | 2019-11-01 | 2024-08-27 | Qorvo Us, Inc. | RF devices with nanotube particles for enhanced performance and methods of forming the same |
US11923238B2 (en) | 2019-12-12 | 2024-03-05 | Qorvo Us, Inc. | Method of forming RF devices with enhanced performance including attaching a wafer to a support carrier by a bonding technique without any polymer adhesive |
US12062571B2 (en) | 2021-03-05 | 2024-08-13 | Qorvo Us, Inc. | Selective etching process for SiGe and doped epitaxial silicon |
Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2011049549A (ja) * | 2009-07-31 | 2011-03-10 | Semiconductor Energy Lab Co Ltd | 半導体装置及び半導体装置の作製方法 |
JP2011049539A (ja) * | 2009-07-31 | 2011-03-10 | Semiconductor Energy Lab Co Ltd | 半導体装置およびその作製方法 |
JP2012160679A (ja) * | 2011-02-03 | 2012-08-23 | Sony Corp | 薄膜トランジスタ、表示装置および電子機器 |
WO2012124511A1 (ja) * | 2011-03-11 | 2012-09-20 | シャープ株式会社 | 薄膜トランジスタおよびその製造方法、並びに表示装置 |
JP2014109590A (ja) * | 2012-11-30 | 2014-06-12 | Panasonic Liquid Crystal Display Co Ltd | 表示装置及び表示装置の製造方法 |
JP2014170829A (ja) * | 2013-03-04 | 2014-09-18 | Sony Corp | 半導体装置およびその製造方法、並びに表示装置の製造方法および電子機器の製造方法 |
JP2014187181A (ja) * | 2013-03-22 | 2014-10-02 | Toshiba Corp | 半導体装置及びその製造方法 |
US20150001534A1 (en) * | 2013-06-27 | 2015-01-01 | Au Optronics Corporation | Thin film transistor and fabricating method thereof |
US20150325706A1 (en) * | 2014-05-09 | 2015-11-12 | Chunghwa Picture Tubes, Ltd. | Thin film transistor and pixel structure |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW577615U (en) * | 2003-04-21 | 2004-02-21 | Toppoly Optoelectronics Corp | Dual-face display panel module sharing the same ASIC chip |
-
2015
- 2015-03-03 TW TW104106690A patent/TWI540371B/zh active
-
2016
- 2016-02-29 US US15/056,538 patent/US9653482B2/en active Active
- 2016-03-02 JP JP2016039775A patent/JP6850540B2/ja active Active
Patent Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2011049549A (ja) * | 2009-07-31 | 2011-03-10 | Semiconductor Energy Lab Co Ltd | 半導体装置及び半導体装置の作製方法 |
JP2011049539A (ja) * | 2009-07-31 | 2011-03-10 | Semiconductor Energy Lab Co Ltd | 半導体装置およびその作製方法 |
JP2012160679A (ja) * | 2011-02-03 | 2012-08-23 | Sony Corp | 薄膜トランジスタ、表示装置および電子機器 |
WO2012124511A1 (ja) * | 2011-03-11 | 2012-09-20 | シャープ株式会社 | 薄膜トランジスタおよびその製造方法、並びに表示装置 |
JP2014109590A (ja) * | 2012-11-30 | 2014-06-12 | Panasonic Liquid Crystal Display Co Ltd | 表示装置及び表示装置の製造方法 |
JP2014170829A (ja) * | 2013-03-04 | 2014-09-18 | Sony Corp | 半導体装置およびその製造方法、並びに表示装置の製造方法および電子機器の製造方法 |
JP2014187181A (ja) * | 2013-03-22 | 2014-10-02 | Toshiba Corp | 半導体装置及びその製造方法 |
US20150001534A1 (en) * | 2013-06-27 | 2015-01-01 | Au Optronics Corporation | Thin film transistor and fabricating method thereof |
US20150325706A1 (en) * | 2014-05-09 | 2015-11-12 | Chunghwa Picture Tubes, Ltd. | Thin film transistor and pixel structure |
Also Published As
Publication number | Publication date |
---|---|
US9653482B2 (en) | 2017-05-16 |
US20160260745A1 (en) | 2016-09-08 |
JP6850540B2 (ja) | 2021-03-31 |
TWI540371B (zh) | 2016-07-01 |
TW201632971A (zh) | 2016-09-16 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6850540B2 (ja) | 表示パネル及び表示装置 | |
WO2020206721A1 (zh) | 显示面板及制作方法、显示模组 | |
TWI533055B (zh) | 顯示面板 | |
US10186526B2 (en) | Display panel | |
US9401375B2 (en) | Display panel and display device | |
US9606407B2 (en) | Display panel and display apparatus | |
TWI628498B (zh) | 顯示裝置及其顯示面板 | |
WO2017024708A1 (zh) | 显示基板及其制作方法、显示器件 | |
US20240304635A1 (en) | Display device | |
KR102102903B1 (ko) | 박막 트랜지스터 어레이 기판 및 이의 제조 방법 | |
TWI581317B (zh) | 薄膜電晶體基板及具備該薄膜電晶體基板之顯示面板 | |
US10074691B2 (en) | Display panel | |
CN105988253B (zh) | 显示面板及显示装置 | |
JP2014134793A (ja) | 表示装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20190221 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20200212 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20200303 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20200603 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20200811 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20201109 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20210209 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20210308 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6850540 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |