JP2014183185A - 半導体装置の製造方法および半導体装置 - Google Patents
半導体装置の製造方法および半導体装置 Download PDFInfo
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- JP2014183185A JP2014183185A JP2013056586A JP2013056586A JP2014183185A JP 2014183185 A JP2014183185 A JP 2014183185A JP 2013056586 A JP2013056586 A JP 2013056586A JP 2013056586 A JP2013056586 A JP 2013056586A JP 2014183185 A JP2014183185 A JP 2014183185A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 34
- 238000004519 manufacturing process Methods 0.000 title abstract description 17
- 229910052751 metal Inorganic materials 0.000 claims abstract description 109
- 239000002184 metal Substances 0.000 claims abstract description 109
- 239000000758 substrate Substances 0.000 claims abstract description 30
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 22
- 229910052802 copper Inorganic materials 0.000 claims abstract description 22
- 239000010949 copper Substances 0.000 claims abstract description 22
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims abstract description 18
- 238000000034 method Methods 0.000 claims abstract description 16
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- 238000009713 electroplating Methods 0.000 claims abstract description 10
- 229910052759 nickel Inorganic materials 0.000 claims abstract description 9
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- 238000002844 melting Methods 0.000 claims description 5
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- 238000007747 plating Methods 0.000 abstract description 37
- 239000003792 electrolyte Substances 0.000 abstract description 2
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- 238000000151 deposition Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
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- 238000004544 sputter deposition Methods 0.000 description 2
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- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
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- 239000012141 concentrate Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
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- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
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- Electroplating Methods And Accessories (AREA)
Abstract
【解決手段】実施形態に係る半導体装置の製造方法では、裏面に導電性膜を設けた基板の表裏を貫通し、導電性膜に達する貫通孔を形成する。貫通孔の内壁面、導電性膜の貫通孔から露出した面および基板の表面に銅を含むシード膜を形成する。電解メッキ法により貫通孔の一方の端面から他方の端面へ向けて銅を含む第1の金属層をボトムアップ成長させ、他方の端面から貫通孔の半径以下の深さまでを残して貫通孔を埋める。中途部まで埋められた貫通孔の内周面から電解メッキ法によりニッケルを含む第2の金属層をコンフォーマル成長させて他方の端面から突出させる。第2の金属層の頂面に第3の金属層を形成し、第3の金属層をマスクとしてシード膜をエッチングし、第3の金属層を熱溶融させて成形する。
【選択図】図1
Description
Claims (5)
- 基板の裏面に導電性膜を形成する工程と、
前記基板の表裏を貫通し、前記導電性膜に達する貫通孔を形成する工程と、
前記貫通孔の内壁面、前記導電性膜の前記貫通孔から露出した面および前記基板の表面に銅を含むシード膜を形成する工程と、
電解メッキ法を用いて、前記基板の表裏を貫通する貫通孔の一方の端面から他方の端面へ向けて銅を含む第1の金属層をボトムアップ成長させて、前記他方の端面から前記貫通孔の半径以下の深さまでを残して前記貫通孔を埋める工程と、
電解メッキ法を用いて、前記第1の金属層によって前記一方の端面から中途部までが埋められた前記貫通孔の内周面からニッケルを含む第2の金属層をコンフォーマル成長させて、前記第2の金属層の頂面を前記他方の端面から突出させる工程と、
前記第2の金属層の頂面に第3の金属層を形成する工程と、
前記第3の金属層をマスクとして前記シード膜をエッチングする工程と、
前記第3の金属層を熱溶融させて成形する工程と
を含むことを特徴とする半導体装置の製造方法。 - 基板の表裏を貫通する貫通孔の一方の端面から他方の端面へ至る中途部までを埋める第1の金属層と、
前記貫通孔の前記中途部から前記他方の端面までを埋めるとともに、頂面が前記貫通孔における前記他方の端面から突出する第2の金属層と、
前記第2の金属層の頂面に設けられ、熱溶融によって成形された第3の金属層と
を備えることを特徴とする半導体装置。 - 第1の金属層は、銅であり、
第2の金属層は、ニッケルである
ことを特徴とする請求項2に記載の半導体装置。 - 前記第1の金属層と前記第2金属層との境界面は、
前記貫通孔の前記他方の端面から該貫通孔の半径以下の深さに位置する
ことを特徴とする請求項2または請求項3に記載の半導体装置。 - 前記第1の金属層は、
前記基板における前記一方の端面から前記他方の端面へ向けたボトムアップ成長によって形成され、
前記第2の金属層は、
前記第1の金属層によって前記一方の端面から中途部までが埋められた前記貫通孔における内周面からのコンフォーマル成長によって形成される
ことを特徴とする請求項2〜4のいずれか一つに記載の半導体装置。
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JP2013056586A JP5826782B2 (ja) | 2013-03-19 | 2013-03-19 | 半導体装置の製造方法 |
TW102129164A TWI529854B (zh) | 2013-03-19 | 2013-08-14 | Semiconductor device manufacturing method and semiconductor device |
CN201310365786.2A CN104064513B (zh) | 2013-03-19 | 2013-08-21 | 半导体装置的制造方法及半导体装置 |
US14/015,799 US20140284772A1 (en) | 2013-03-19 | 2013-08-30 | Semiconductor device manufacturing method and semiconductor device thereof |
US14/883,701 US20160035624A1 (en) | 2013-03-19 | 2015-10-15 | Semiconductor device manufacturing method and semiconductor device thereof |
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US10672659B2 (en) | 2017-02-28 | 2020-06-02 | Canon Kabushiki Kaisha | Electronic component manufacturing method |
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- 2013-08-14 TW TW102129164A patent/TWI529854B/zh active
- 2013-08-21 CN CN201310365786.2A patent/CN104064513B/zh active Active
- 2013-08-30 US US14/015,799 patent/US20140284772A1/en not_active Abandoned
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US11437269B2 (en) | 2012-03-27 | 2022-09-06 | Novellus Systems, Inc. | Tungsten feature fill with nucleation inhibition |
US11901227B2 (en) | 2014-09-30 | 2024-02-13 | Lam Research Corporation | Feature fill with nucleation inhibition |
JP2017022220A (ja) * | 2015-07-09 | 2017-01-26 | 大日本印刷株式会社 | 貫通電極基板及びその製造方法 |
US11355345B2 (en) | 2016-08-16 | 2022-06-07 | Lam Research Corporation | Method for preventing line bending during metal fill process |
US10672659B2 (en) | 2017-02-28 | 2020-06-02 | Canon Kabushiki Kaisha | Electronic component manufacturing method |
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CN104064513A (zh) | 2014-09-24 |
TW201438145A (zh) | 2014-10-01 |
US20160035624A1 (en) | 2016-02-04 |
CN104064513B (zh) | 2017-05-03 |
TWI529854B (zh) | 2016-04-11 |
US20140284772A1 (en) | 2014-09-25 |
JP5826782B2 (ja) | 2015-12-02 |
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