JP2014167476A5 - - Google Patents

Download PDF

Info

Publication number
JP2014167476A5
JP2014167476A5 JP2014077804A JP2014077804A JP2014167476A5 JP 2014167476 A5 JP2014167476 A5 JP 2014167476A5 JP 2014077804 A JP2014077804 A JP 2014077804A JP 2014077804 A JP2014077804 A JP 2014077804A JP 2014167476 A5 JP2014167476 A5 JP 2014167476A5
Authority
JP
Japan
Prior art keywords
data
wafer
inspection
alignment site
inspection system
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2014077804A
Other languages
Japanese (ja)
Other versions
JP2014167476A (en
JP6023116B2 (en
Filing date
Publication date
Priority claimed from US11/561,659 external-priority patent/US7570796B2/en
Priority claimed from US11/561,735 external-priority patent/US7676077B2/en
Application filed filed Critical
Publication of JP2014167476A publication Critical patent/JP2014167476A/en
Publication of JP2014167476A5 publication Critical patent/JP2014167476A5/ja
Application granted granted Critical
Publication of JP6023116B2 publication Critical patent/JP6023116B2/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Claims (26)

検査データの位置を決定するためのコンピュータ実施方法であって、
ウェハ上のアライメント部位について検査システムにより取り込まれたデータを所定のアライメント部位に対するデータにアラインさせることと、
前記所定のアライメント部位の位置に基づいて前記ウェハ上の前記アライメント部位の位置を決定することと、
前記ウェハ上の前記アライメント部位の前記位置に基づいて前記検査システムにより前記ウェハについて取り込まれた検査データの位置を決定することとを含むコンピュータ実施方法。 A computer-implemented method for determining the location of inspection data comprising:
Aligning the data captured by the inspection system for the alignment site on the wafer with the data for a given alignment site
Determining the position of the alignment site on the wafer based on the position of the predetermined alignment site;
Determining a position of inspection data captured for the wafer by the inspection system based on the position of the alignment site on the wafer. 前記検査データの前記位置は、サブピクセル精度で決定される請求項１に記載の方法。   The method of claim 1, wherein the location of the inspection data is determined with sub-pixel accuracy. 前記検査データの前記位置は、設計データ空間座標において決定される請求項１に記載の方法。   The method of claim 1, wherein the location of the inspection data is determined in design data space coordinates. 前記所定のアライメント部位に対する前記データは、データ構造体に格納されている設計データを含む請求項１に記載の方法。   The method of claim 1, wherein the data for the predetermined alignment site includes design data stored in a data structure. 前記所定のアライメント部位に対する前記データは、前記ウェハ上の設計データに対するプロキシとして使用されるレチクルのイメージを含む請求項１に記載の方法。   The method of claim 1, wherein the data for the predetermined alignment site includes an image of a reticle used as a proxy for design data on the wafer. 前記所定のアライメント部位に対する前記データは、前記設計データ空間において設計データとして使用するレチクル検査システムにより生成されるレチクルのイメージを含み、前記レチクルは、前記ウェハ上に前記設計データを印刷するために使用される請求項１に記載の方法。   The data for the predetermined alignment site includes an image of a reticle generated by a reticle inspection system that is used as design data in the design data space, and the reticle is used to print the design data on the wafer. The method of claim 1, wherein: 前記所定のアライメント部位に対する前記データは、高倍率光学的レチクル検査システム又は電子ビーム・ベースのレチクル検査システムによりそれぞれ取り込まれたレチクルの高倍率光学的又は電子ビーム・イメージを含む請求項１に記載の方法。   The data of claim 1, wherein the data for the predetermined alignment site includes a high magnification optical or electron beam image of a reticle captured by a high magnification optical reticle inspection system or an electron beam based reticle inspection system, respectively. Method. 前記所定のアライメント部位に対する前記データは、空間イメージング・レチクル検査システムにより取り込まれたレチクルの空間イメージを含む請求項１に記載の方法。   The method of claim 1, wherein the data for the predetermined alignment site includes a spatial image of a reticle captured by a spatial imaging reticle inspection system. 前記所定のアライメント部位に対する前記データは、レチクル・イメージがウェハ表面にどのように印刷されるかを示すシミュレートされたイメージを含む請求項１に記載の方法。   The method of claim 1, wherein the data for the predetermined alignment site includes a simulated image showing how a reticle image is printed on a wafer surface. さらに、前記ウェハ上に前記設計データを印刷するために使用されるレチクルについて取り込まれたレチクル検査データに基づいて、設計データ空間における設計データに対するコンテキスト・マップを生成することを含む請求項１に記載の方法。   The method of claim 1, further comprising: generating a context map for design data in a design data space based on reticle inspection data captured for a reticle used to print the design data on the wafer. the method of. 前記所定のアライメント部位の前記位置は、前記ウェハ上で検出された欠陥のレビューにより決定された設計データ空間における配置でレビューシステムにより取り込まれたデータを含む請求項１に記載の方法。   The method of claim 1, wherein the position of the predetermined alignment site includes data captured by a review system in an arrangement in a design data space determined by review of defects detected on the wafer. 前記ウェハ上の前記アライメント部位について前記検査システムにより取り込まれた前記データを前記所定のアライメント部位に対するデータにアラインさせることは、前記ウェハ上での欠陥の検出の間に前記検査システムにより取り込まれた前記データを、前記欠陥のレビューにより決定された設計データ空間における配置でレビューシステムにより取り込まれたデータと比較することを含む請求項１に記載の方法。   Aligning the data captured by the inspection system for the alignment site on the wafer with the data for the predetermined alignment site is the data captured by the inspection system during detection of defects on the wafer. The method of claim 1, comprising comparing data with data captured by a review system in an arrangement in a design data space determined by review of the defects. 前記アライメント部位の前記位置を決定することは、前記比較の結果に基づいて少なくとも前記欠陥の少なくとも一部の設計データ空間位置を決定することを含む請求項１２に記載の方法。   The method of claim 12, wherein determining the position of the alignment site includes determining a design data space position of at least a portion of the defect based on the result of the comparison. 前記検査データの前記位置を決定することは、ウェハ空間における報告された欠陥位置を前記設計データ空間における欠陥の位置に変換する変換を生成して使用することを含む請求項１３に記載の方法。   The method of claim 13, wherein determining the location of the inspection data includes generating and using a transform that converts a reported defect location in wafer space to a defect location in the design data space. さらに、前記検査システムを使用して前記所定のアライメント部位を選択することを含む請求項１に記載の方法。   The method of claim 1, further comprising selecting the predetermined alignment site using the inspection system. 前記選択するために使用される前記検査システムのイメージング・モードは、前記検査データを取り込むために使用される前記検査システムのイメージング・モードと異なる請求項１５に記載の方法。   The method of claim 15, wherein an imaging mode of the inspection system used to select is different from an imaging mode of the inspection system used to capture the inspection data. 前記検査システムは前記ウェハの検査のために複数の光学的イメージング・モードを使用するように構成される請求項１に記載の方法。   The method of claim 1, wherein the inspection system is configured to use a plurality of optical imaging modes for inspection of the wafer. 前記検査システムは複数のイメージング・モードを同時に使用して前記検査データを取り込むように構成される請求項１に記載の方法。   The method of claim 1, wherein the inspection system is configured to capture the inspection data using multiple imaging modes simultaneously. 前記検査システムは複数のイメージング・モードを順次使用して前記検査データを取り込むように構成される請求項１に記載の方法。   The method of claim 1, wherein the inspection system is configured to capture the inspection data using a plurality of imaging modes sequentially. 前記所定のアライメント部位に対する前記データにアラインされた、前記ウェハ上の前記アライメント部位について前記検査システムにより取り込まれた前記データは、前記検査システムの第１のイメージング・モードにおいて取り込まれたデータを含み、前記所定のアライメント部位の前記位置に基づいて前記ウェハ上の前記アライメント部位の前記位置を決定することは、前記第１のイメージング・モードにおいて取り込まれた前記データにアラインされた前記所定のアライメント部位に対する前記データについての設計データ空間座標を、前記検査システムの第２のイメージング・モードにおいて取り込まれた対応するデータに関連付けることを含み、
前記検査データは、前記第２のイメージング・モードを使用して取り込まれる、請求項１に記載の方法。 The data captured by the inspection system for the alignment site on the wafer, aligned with the data for the predetermined alignment site, includes data captured in a first imaging mode of the inspection system; Determining the position of the alignment site on the wafer based on the position of the predetermined alignment site is relative to the predetermined alignment site aligned with the data captured in the first imaging mode. Associating design data space coordinates for the data with corresponding data captured in a second imaging mode of the inspection system;
The method of claim 1, wherein the inspection data is captured using the second imaging mode. 前記所定のアライメント部位に対する前記データは前記ウェハ上の複数のプロセス層に対する設計データを含む請求項１に記載の方法。   The method of claim 1, wherein the data for the predetermined alignment site includes design data for a plurality of process layers on the wafer. 前記検査データは前記ウェハ上で実行される検査プロセスにおいて取り込まれ、さらに、前記ウェハに対するコンテキスト・データに基づいて前記検査プロセスのための１つまたは複数のパラメータを決定することを含み、前記コンテキスト・データは前記ウェハに対するデバイス設計における１つまたは複数の属性の異なる値を有する幾何学的領域を定め、前記コンテキスト・データは前記ウェハ上にある、または前記ウェハ上に形成される、または前記ウェハの処理における早期の段階で形成された複数の層に対するコンテキスト・データを含む請求項１に記載の方法。   The inspection data is captured in an inspection process performed on the wafer, and further includes determining one or more parameters for the inspection process based on context data for the wafer; The data defines geometric regions having different values of one or more attributes in the device design for the wafer, and the context data is on or formed on the wafer, or of the wafer The method of claim 1 including context data for a plurality of layers formed at an early stage in processing. 前記１つ又は複数のパラメータが前記ウェハの異なる部分で欠陥を検出する感度を含む請求項２２に記載の方法。   23. The method of claim 22, wherein the one or more parameters include sensitivity to detect defects at different portions of the wafer. さらに、前記ウェハ上の複数の層に対するコンテキスト・マップにおけるコンテキスト・データに基づいて前記検査データを使用して検出された欠陥のクリティカル度を決定することを含む請求項１に記載の方法。   The method of claim 1, further comprising determining a criticality of a detected defect using the inspection data based on context data in a context map for a plurality of layers on the wafer. さらに、前記検査データを使用して検出された欠陥を、前記ウェハ上の複数のプロセス層に対する設計データに基づいてビン範囲に従って分けることを含む請求項１に記載の方法。   The method of claim 1, further comprising dividing defects detected using the inspection data according to bin ranges based on design data for a plurality of process layers on the wafer. 検査データの位置を決定するように構成されているシステムであって、
ウェハ上のアライメント部位に対するデータ及び前記ウェハに対する検査データを取り込むように構成された検査システムと、
前記検査システムに結合されたプロセッサと、を含み、
前記プロセッサは、
前記ウェハ上の前記アライメント部位に対する前記データを所定のアライメント部位に対するデータにアラインさせ、
前記所定のアライメント部位の位置に基づいて前記ウェハ上の前記アライメント部位の位置を決定し、
前記ウェハ上の前記アライメント部位の前記位置に基づいて前記検査データの位置を決定する、
ように構成されている、システム。 A system configured to determine the location of inspection data,
An inspection system configured to capture data for alignment sites on the wafer and inspection data for the wafer;
A processor coupled to the inspection system,
The processor is
Aligning the data for the alignment site on the wafer with data for a predetermined alignment site;
Determining the position of the alignment site on the wafer based on the position of the predetermined alignment site;
Determining the position of the inspection data based on the position of the alignment site on the wafer;
Configured as a system.
JP2014077804A 2005-11-18 2014-04-04 Method for using design data in combination with inspection data Active JP6023116B2 (en)

Applications Claiming Priority (8)

Application Number Priority Date Filing Date Title
US73794705P 2005-11-18 2005-11-18
US73829005P 2005-11-18 2005-11-18
US60/737,947 2005-11-18
US60/738,290 2005-11-18
US11/561,659 US7570796B2 (en) 2005-11-18 2006-11-20 Methods and systems for utilizing design data in combination with inspection data
US11/561,735 2006-11-20
US11/561,735 US7676077B2 (en) 2005-11-18 2006-11-20 Methods and systems for utilizing design data in combination with inspection data
US11/561,659 2006-11-20

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP2013134798A Division JP5932723B2 (en) 2005-11-18 2013-06-27 Method and system for using design data in combination with inspection data

Related Child Applications (2)

Application Number Title Priority Date Filing Date
JP2015184050A Division JP6312641B2 (en) 2005-11-18 2015-09-17 Method for using design data in combination with inspection data
JP2015184061A Division JP6312642B2 (en) 2005-11-18 2015-09-17 Method for using design data in combination with inspection data

Publications (3)

Publication Number Publication Date
JP2014167476A JP2014167476A (en) 2014-09-11
JP2014167476A5 true JP2014167476A5 (en) 2015-03-19
JP6023116B2 JP6023116B2 (en) 2016-11-09

Family

ID=38610775

Family Applications (12)

Application Number Title Priority Date Filing Date
JP2008541507A Active JP5465880B2 (en) 2005-11-18 2006-11-20 Method and system for using design data in combination with inspection data
JP2012111262A Active JP5466264B2 (en) 2005-11-18 2012-05-15 Method and system for using design data in combination with inspection data
JP2013134802A Active JP5763712B2 (en) 2005-11-18 2013-06-27 Method and system for using design data in combination with inspection data
JP2013134798A Active JP5932723B2 (en) 2005-11-18 2013-06-27 Method and system for using design data in combination with inspection data
JP2014077804A Active JP6023116B2 (en) 2005-11-18 2014-04-04 Method for using design data in combination with inspection data
JP2014255558A Active JP5965467B2 (en) 2005-11-18 2014-12-17 Method and system for using design data in combination with inspection data
JP2014255556A Active JP5869657B2 (en) 2005-11-18 2014-12-17 Method and system for using design data in combination with inspection data
JP2015184061A Active JP6312642B2 (en) 2005-11-18 2015-09-17 Method for using design data in combination with inspection data
JP2015184050A Active JP6312641B2 (en) 2005-11-18 2015-09-17 Method for using design data in combination with inspection data
JP2016033028A Active JP6360845B2 (en) 2005-11-18 2016-02-24 Method for using design data in combination with inspection data
JP2016033027A Active JP6127170B2 (en) 2005-11-18 2016-02-24 A system configured to separate defects detected on a wafer according to bin ranges
JP2016033030A Active JP6364036B2 (en) 2005-11-18 2016-02-24 Method for using design data in combination with inspection data

Family Applications Before (4)

Application Number Title Priority Date Filing Date
JP2008541507A Active JP5465880B2 (en) 2005-11-18 2006-11-20 Method and system for using design data in combination with inspection data
JP2012111262A Active JP5466264B2 (en) 2005-11-18 2012-05-15 Method and system for using design data in combination with inspection data
JP2013134802A Active JP5763712B2 (en) 2005-11-18 2013-06-27 Method and system for using design data in combination with inspection data
JP2013134798A Active JP5932723B2 (en) 2005-11-18 2013-06-27 Method and system for using design data in combination with inspection data

Family Applications After (7)

Application Number Title Priority Date Filing Date
JP2014255558A Active JP5965467B2 (en) 2005-11-18 2014-12-17 Method and system for using design data in combination with inspection data
JP2014255556A Active JP5869657B2 (en) 2005-11-18 2014-12-17 Method and system for using design data in combination with inspection data
JP2015184061A Active JP6312642B2 (en) 2005-11-18 2015-09-17 Method for using design data in combination with inspection data
JP2015184050A Active JP6312641B2 (en) 2005-11-18 2015-09-17 Method for using design data in combination with inspection data
JP2016033028A Active JP6360845B2 (en) 2005-11-18 2016-02-24 Method for using design data in combination with inspection data
JP2016033027A Active JP6127170B2 (en) 2005-11-18 2016-02-24 A system configured to separate defects detected on a wafer according to bin ranges
JP2016033030A Active JP6364036B2 (en) 2005-11-18 2016-02-24 Method for using design data in combination with inspection data

Country Status (5)

Country Link
EP (1) EP1955225A4 (en)
JP (12) JP5465880B2 (en)
KR (11) KR101613048B1 (en)
IL (14) IL191527A (en)
WO (2) WO2007120279A2 (en)

Families Citing this family (90)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9002497B2 (en) * 2003-07-03 2015-04-07 Kla-Tencor Technologies Corp. Methods and systems for inspection of wafers and reticles using designer intent data
KR101613048B1 (en) * 2005-11-18 2016-04-15 케이엘에이-텐코 코포레이션 Methods and systems for utilizing design data in combination with inspection data
WO2009020885A1 (en) * 2007-08-03 2009-02-12 Flir Systems, Inc. Wireless remote detector systems and methods
WO2009152046A1 (en) * 2008-06-11 2009-12-17 Kla-Tencor Corporation Systems and methods for detecting design and process defects on a wafer, reviewing defects on a wafer, selecting one or more features within a design for use as process monitoring features, or some combination thereof
US9659670B2 (en) * 2008-07-28 2017-05-23 Kla-Tencor Corp. Computer-implemented methods, computer-readable media, and systems for classifying defects detected in a memory device area on a wafer
JPWO2011004534A1 (en) * 2009-07-09 2012-12-13 株式会社日立ハイテクノロジーズ Semiconductor defect classification method, semiconductor defect classification apparatus, semiconductor defect classification program
US8594823B2 (en) * 2009-07-17 2013-11-26 KLA—Tencor Corporation Scanner performance comparison and matching using design and defect data
WO2011152303A1 (en) * 2010-05-31 2011-12-08 株式会社日立ハイテクノロジーズ Charged particle beam device provided with automatic aberration correction method
EP2447889A1 (en) * 2010-10-29 2012-05-02 Siemens Aktiengesellschaft Method for modeling a defect management in a manufacturing process and for handling the defect during the production process based on said modeled defect management
TWI574136B (en) * 2012-02-03 2017-03-11 應用材料以色列公司 Method of design-based defect classification and system thereof
US8718353B2 (en) * 2012-03-08 2014-05-06 Kla-Tencor Corporation Reticle defect inspection with systematic defect filter
JP5943722B2 (en) 2012-06-08 2016-07-05 三菱重工業株式会社 Defect determination apparatus, radiation imaging system, and defect determination method
JP6092602B2 (en) * 2012-12-04 2017-03-08 株式会社安永 Defect inspection apparatus and defect inspection method
US9202763B2 (en) 2013-01-16 2015-12-01 Kabushiki Kaisha Toshiba Defect pattern evaluation method, defect pattern evaluation apparatus, and recording media
JP6152281B2 (en) * 2013-02-25 2017-06-21 株式会社ニューフレアテクノロジー Pattern inspection method and pattern inspection apparatus
US10114368B2 (en) * 2013-07-22 2018-10-30 Applied Materials Israel Ltd. Closed-loop automatic defect inspection and classification
US9401016B2 (en) * 2014-05-12 2016-07-26 Kla-Tencor Corp. Using high resolution full die image data for inspection
WO2016005965A1 (en) * 2014-07-08 2016-01-14 Orbotech Ltd. Improved systems and methods for computerized direct writing
US10267746B2 (en) * 2014-10-22 2019-04-23 Kla-Tencor Corp. Automated pattern fidelity measurement plan generation
JP6770958B2 (en) * 2014-11-25 2020-10-21 ケーエルエー コーポレイション Landscape analysis and utilization
US9830421B2 (en) * 2014-12-31 2017-11-28 Kla-Tencor Corp. Alignment of inspection to design using built in targets
US10199283B1 (en) 2015-02-03 2019-02-05 Pdf Solutions, Inc. Method for processing a semiconductor wager using non-contact electrical measurements indicative of a resistance through a stitch, where such measurements are obtained by scanning a pad comprised of at least three parallel conductive stripes using a moving stage with beam deflection to account for motion of the stage
US9799575B2 (en) 2015-12-16 2017-10-24 Pdf Solutions, Inc. Integrated circuit containing DOEs of NCEM-enabled fill cells
US9875536B2 (en) 2015-03-31 2018-01-23 Kla-Tencor Corp. Sub-pixel and sub-resolution localization of defects on patterned wafers
US10539612B2 (en) * 2015-05-20 2020-01-21 Kla-Tencor Corporation Voltage contrast based fault and defect inference in logic chips
US9639645B2 (en) 2015-06-18 2017-05-02 Globalfoundries Inc. Integrated circuit chip reliability using reliability-optimized failure mechanism targeting
US9940704B2 (en) 2015-06-19 2018-04-10 KLA—Tencor Corporation Pre-layer defect site review using design
US9891275B2 (en) 2015-06-24 2018-02-13 International Business Machines Corporation Integrated circuit chip reliability qualification using a sample-specific expected fail rate
TWI684225B (en) * 2015-08-28 2020-02-01 美商克萊譚克公司 Self directed metrology and pattern classification
US9576772B1 (en) * 2015-08-31 2017-02-21 Fei Company CAD-assisted TEM prep recipe creation
KR102387459B1 (en) 2015-11-20 2022-04-15 삼성전자주식회사 A method for forming pattern of a semiconductor device
US10387601B2 (en) * 2015-11-26 2019-08-20 Kla-Tencor Corporation Methods to store dynamic layer content inside a design file
US10593604B1 (en) 2015-12-16 2020-03-17 Pdf Solutions, Inc. Process for making semiconductor dies, chips, and wafers using in-line measurements obtained from DOEs of NCEM-enabled fill cells
US10978438B1 (en) 2015-12-16 2021-04-13 Pdf Solutions, Inc. IC with test structures and E-beam pads embedded within a contiguous standard cell area
IL259633B (en) * 2015-12-22 2022-07-01 Asml Netherlands Bv Apparatus and method for process-window characterization
TWI797699B (en) * 2015-12-22 2023-04-01 以色列商應用材料以色列公司 Method of deep learning - based examination of a semiconductor specimen and system thereof
KR102451650B1 (en) * 2016-02-05 2022-10-11 에스케이하이닉스 주식회사 Stacked type seniconductor apparatus
KR102483787B1 (en) * 2016-02-25 2023-01-04 에스케이하이닉스 주식회사 Apparatus and Method for Modeling of Defect to Semiconductor Apparatus, and Computer Program Therefor, and System for Inspection of Defect to Semiconductor Apparatus
US10339262B2 (en) * 2016-03-29 2019-07-02 Kla-Tencor Corporation System and method for defining care areas in repeating structures of design data
US9627370B1 (en) 2016-04-04 2017-04-18 Pdf Solutions, Inc. Integrated circuit containing standard logic cells and library-compatible, NCEM-enabled fill cells, including at least via-open-configured, GATE-short-configured, GATECNT-short-configured, and TS-short-configured, NCEM-enabled fill cells
US9929063B1 (en) 2016-04-04 2018-03-27 Pdf Solutions, Inc. Process for making an integrated circuit that includes NCEM-Enabled, tip-to-side gap-configured fill cells, with NCEM pads formed from at least three conductive stripes positioned between adjacent gates
US9905553B1 (en) 2016-04-04 2018-02-27 Pdf Solutions, Inc. Integrated circuit containing standard logic cells and library-compatible, NCEM-enabled fill cells, including at least via-open-configured, AACNT-short-configured, GATECNT-short-configured, and metal-short-configured, NCEM-enabled fill cells
US10740888B2 (en) * 2016-04-22 2020-08-11 Kla-Tencor Corporation Computer assisted weak pattern detection and quantification system
KR102376200B1 (en) * 2016-05-12 2022-03-18 에이에스엠엘 네델란즈 비.브이. Identification of hot spots or defects by machine learning
US11010886B2 (en) * 2016-05-17 2021-05-18 Kla-Tencor Corporation Systems and methods for automatic correction of drift between inspection and design for massive pattern searching
US10192302B2 (en) * 2016-05-25 2019-01-29 Kla-Tencor Corporation Combined patch and design-based defect detection
US10304177B2 (en) * 2016-06-29 2019-05-28 Kla-Tencor Corporation Systems and methods of using z-layer context in logic and hot spot inspection for sensitivity improvement and nuisance suppression
US10902576B2 (en) * 2016-08-12 2021-01-26 Texas Instruments Incorporated System and method for electronic die inking after automatic visual defect inspection
US10204290B2 (en) * 2016-10-14 2019-02-12 Kla-Tencor Corporation Defect review sampling and normalization based on defect and design attributes
US10395358B2 (en) * 2016-11-10 2019-08-27 Kla-Tencor Corp. High sensitivity repeater defect detection
US11047806B2 (en) * 2016-11-30 2021-06-29 Kla-Tencor Corporation Defect discovery and recipe optimization for inspection of three-dimensional semiconductor structures
US11237119B2 (en) * 2017-01-10 2022-02-01 Kla-Tencor Corporation Diagnostic methods for the classifiers and the defects captured by optical tools
US9748153B1 (en) 2017-03-29 2017-08-29 Pdf Solutions, Inc. Process for making and using a semiconductor wafer containing first and second does of standard cell compatible, NCEM-enabled fill cells, with the first DOE including side-to-side short configured fill cells, and the second DOE including tip-to-side short configure
US9773774B1 (en) 2017-03-30 2017-09-26 Pdf Solutions, Inc. Process for making and using a semiconductor wafer containing first and second DOEs of standard cell compatible, NCEM-enabled fill cells, with the first DOE including chamfer short configured fill cells, and the second DOE including corner short configured fill cells
US10598617B2 (en) * 2017-05-05 2020-03-24 Kla-Tencor Corporation Metrology guided inspection sample shaping of optical inspection results
JP6819451B2 (en) * 2017-05-08 2021-01-27 信越化学工業株式会社 Large synthetic quartz glass substrate and its evaluation method and manufacturing method
CN110622287B (en) * 2017-05-22 2023-11-03 科磊股份有限公司 Regional analysis for recipe optimization and measurement
KR102440742B1 (en) * 2017-05-25 2022-09-05 삼성전자주식회사 Inspecting system for semiconductor device and operating method of the same
US10648925B2 (en) * 2017-06-05 2020-05-12 Kla-Tencor Corporation Repeater defect detection
WO2018226215A1 (en) * 2017-06-06 2018-12-13 Kla-Tencor Corporation Reticle optimization algorithms and optimal target design
US9768083B1 (en) 2017-06-27 2017-09-19 Pdf Solutions, Inc. Process for making and using a semiconductor wafer containing first and second DOEs of standard cell compatible, NCEM-enabled fill cells, with the first DOE including merged-via open configured fill cells, and the second DOE including snake open configured fill cells
US9786649B1 (en) 2017-06-27 2017-10-10 Pdf Solutions, Inc. Process for making and using a semiconductor wafer containing first and second DOEs of standard cell compatible, NCEM-enabled fill cells, with the first DOE including via open configured fill cells, and the second DOE including stitch open configured fill cells
US9865583B1 (en) 2017-06-28 2018-01-09 Pdf Solutions, Inc. Process for making and using a semiconductor wafer containing first and second DOEs of standard cell compatible, NCEM-enabled fill cells, with the first DOE including snake open configured fill cells, and the second DOE including stitch open configured fill cells
US10096530B1 (en) 2017-06-28 2018-10-09 Pdf Solutions, Inc. Process for making and using a semiconductor wafer containing first and second DOEs of standard cell compatible, NCEM-enabled fill cells, with the first DOE including merged-via open configured fill cells, and the second DOE including stitch open configured fill cells
US10620135B2 (en) * 2017-07-19 2020-04-14 Kla-Tencor Corp. Identifying a source of nuisance defects on a wafer
KR102614266B1 (en) * 2017-08-22 2023-12-14 삼성전자주식회사 A method for wafer inspection, and a method for manufacturing a semiconductor device using the same
US11037286B2 (en) * 2017-09-28 2021-06-15 Applied Materials Israel Ltd. Method of classifying defects in a semiconductor specimen and system thereof
KR20190073756A (en) 2017-12-19 2019-06-27 삼성전자주식회사 Semiconductor defect classification device, method for classifying defect of semiconductor, and semiconductor defect classification system
WO2019162496A1 (en) * 2018-02-26 2019-08-29 F. Hoffmann-La Roche Ag Methods and systems for calibrating and using a camera for detecting an analyte in a sample
US10585049B2 (en) * 2018-03-10 2020-03-10 Kla-Tencor Corporation Process-induced excursion characterization
US10677588B2 (en) * 2018-04-09 2020-06-09 Kla-Tencor Corporation Localized telecentricity and focus optimization for overlay metrology
US11797950B2 (en) * 2018-08-27 2023-10-24 Basf Corporation Method and system to digitally track and monitor an automotive refinish repair process
JP7113086B2 (en) * 2018-10-18 2022-08-04 株式会社図研 Design support device, design support method and program
US11049745B2 (en) * 2018-10-19 2021-06-29 Kla Corporation Defect-location determination using correction loop for pixel alignment
US11600505B2 (en) * 2018-10-31 2023-03-07 Taiwan Semiconductor Manufacturing Co., Ltd. Systems and methods for systematic physical failure analysis (PFA) fault localization
CN109583721B (en) * 2018-11-16 2024-06-18 北京奇虎科技有限公司 Channel assessment method and device and electronic equipment
JP2020161769A (en) * 2019-03-28 2020-10-01 Ｔａｓｍｉｔ株式会社 Image generation method
TWI700644B (en) * 2019-04-02 2020-08-01 精英電腦股份有限公司 Synchronous positioning device and method for circuit board or plate member
JP7245733B2 (en) * 2019-06-26 2023-03-24 株式会社日立ハイテク Wafer observation device and wafer observation method
US11526152B2 (en) * 2019-12-19 2022-12-13 X Development Llc Techniques for determining fabricability of designs by searching for forbidden patterns
CN113820922A (en) * 2020-06-18 2021-12-21 台湾积体电路制造股份有限公司 Hot spot prediction method, device and recording medium
CN111708255B (en) * 2020-06-19 2023-03-07 上海华虹宏力半导体制造有限公司 Method for forming SSA table of OPC
JP2022047442A (en) * 2020-09-11 2022-03-24 パナソニックＩｐマネジメント株式会社 Information processing method and information processing system
JP7443268B2 (en) 2021-01-05 2024-03-05 株式会社ニューフレアテクノロジー Defect inspection method
CN117157648A (en) * 2021-03-30 2023-12-01 西门子工业软件有限公司 Method and system for detecting false errors on components of an AOI machine inspected board
KR20230033445A (en) 2021-09-01 2023-03-08 에스케이하이닉스 주식회사 Method for failure analysis on semiconductor wafer and system thereof
KR102672272B1 (en) * 2022-02-11 2024-06-04 큐알티 주식회사 Beam inspection apparatus comprising plurality of a guide concentric circle for testing of semiconductor, and method of inspection for beam
KR102518783B1 (en) * 2022-06-23 2023-04-06 큐알티 주식회사 Beam controller capable of adaptive deformation, a test apparatus for semiconductor device using the same, and a test method for semiconductor device using the same
US20240112326A1 (en) * 2022-09-30 2024-04-04 Kla Corporation Inspection of adaptive patterned workpieces with dynamic design and deep learning-based rendering
KR102594471B1 (en) * 2022-12-07 2023-10-26 주식회사디아이 Multi-test zone controller for semiconductor test equipment

Family Cites Families (63)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02110565A (en) * 1988-10-20 1990-04-23 Matsushita Electron Corp Method and device for photo-mask inspection
US5054097A (en) * 1988-11-23 1991-10-01 Schlumberger Technologies, Inc. Methods and apparatus for alignment of images
US5252507A (en) * 1990-03-30 1993-10-12 Tactical Fabs, Inc. Very high density wafer scale device architecture
JP3017839B2 (en) * 1991-06-10 2000-03-13 東芝機械株式会社 Defect inspection method and inspection device
JP3730263B2 (en) * 1992-05-27 2005-12-21 ケーエルエー・インストルメンツ・コーポレーション Apparatus and method for automatic substrate inspection using charged particle beam
JPH06119452A (en) * 1992-10-02 1994-04-28 Fujitsu Ltd Device and method for processing image
JPH06265480A (en) * 1993-03-12 1994-09-22 Toshiba Corp Pattern defect inspection method and device
JP3370379B2 (en) * 1993-03-19 2003-01-27 株式会社日立製作所 Method for manufacturing semiconductor device
JP3051279B2 (en) * 1993-05-13 2000-06-12 シャープ株式会社 Bump appearance inspection method and bump appearance inspection device
US5544256A (en) 1993-10-22 1996-08-06 International Business Machines Corporation Automated defect classification system
JP3466286B2 (en) * 1994-08-09 2003-11-10 富士通株式会社 Pattern inspection method and pattern inspection device
US5991699A (en) 1995-05-04 1999-11-23 Kla Instruments Corporation Detecting groups of defects in semiconductor feature space
JPH0915161A (en) * 1995-06-27 1997-01-17 Hitachi Ltd Method and equipment for defect inspection
JPH10260011A (en) * 1997-03-19 1998-09-29 Olympus Optical Co Ltd Positioning device
JP3564958B2 (en) 1997-08-07 2004-09-15 株式会社日立製作所 Inspection method and inspection apparatus using electron beam
JPH11251377A (en) * 1998-03-02 1999-09-17 Hitachi Ltd Defect inspection method/device and observation or analysis method/system for defect
JP4073088B2 (en) * 1998-08-20 2008-04-09 株式会社ルネサステクノロジ Manufacturing method of semiconductor substrate
JP2000065747A (en) * 1998-08-26 2000-03-03 Toshiba Corp Apparatus and method for inspection of defect of pattern
JP2000306964A (en) * 1999-04-22 2000-11-02 Hitachi Ltd Inspection data processing method, and inspection data processor
JP2000200356A (en) * 1999-01-08 2000-07-18 Hitachi Ltd Method and device for defect classification
JP3350477B2 (en) * 1999-04-02 2002-11-25 セイコーインスツルメンツ株式会社 Wafer inspection equipment
JP2001230289A (en) * 2000-02-15 2001-08-24 Hitachi Ltd Fault analyzing method and system
US7120285B1 (en) * 2000-02-29 2006-10-10 Advanced Micro Devices, Inc. Method for evaluation of reticle image using aerial image simulator
US6862142B2 (en) * 2000-03-10 2005-03-01 Kla-Tencor Technologies Corporation Multi-detector microscopic inspection system
US6507800B1 (en) * 2000-03-13 2003-01-14 Promos Technologies, Inc. Method for testing semiconductor wafers
JP3920003B2 (en) * 2000-04-25 2007-05-30 株式会社ルネサステクノロジ Inspection data processing method and apparatus
FR2813145B1 (en) * 2000-08-18 2002-11-29 St Microelectronics Sa METHOD FOR MANUFACTURING A CAPACITOR WITHIN AN INTEGRATED CIRCUIT, AND CORRESPONDING INTEGRATED CIRCUIT
US6634018B2 (en) * 2000-08-24 2003-10-14 Texas Instruments Incorporated Optical proximity correction
JP3678133B2 (en) * 2000-10-30 2005-08-03 株式会社日立製作所 Inspection system and semiconductor device manufacturing method
AU2002227965A1 (en) * 2000-11-30 2002-06-11 Sigma-C Gmbh Method and device for determining the properties of an integrated circuit
JP2002244275A (en) * 2001-02-15 2002-08-30 Toshiba Corp Method and device for defect inspection of photomask and recording medium
JP4014379B2 (en) * 2001-02-21 2007-11-28 株式会社日立製作所 Defect review apparatus and method
JP2003023056A (en) * 2001-07-10 2003-01-24 Hitachi Ltd Method for sorting defect of semiconductor device, method for predicting yield of the semiconductor device, method for manufacturing the semiconductor device, defect-sorting system of semiconductor device and semiconductor device-sorting apparatus, and program used therefor and recording medium
JP4122735B2 (en) * 2001-07-24 2008-07-23 株式会社日立製作所 Semiconductor device inspection method and inspection condition setting method
JP3904419B2 (en) * 2001-09-13 2007-04-11 株式会社日立製作所 Inspection device and inspection system
US6918101B1 (en) 2001-10-25 2005-07-12 Kla -Tencor Technologies Corporation Apparatus and methods for determining critical area of semiconductor design data
US6751519B1 (en) * 2001-10-25 2004-06-15 Kla-Tencor Technologies Corporation Methods and systems for predicting IC chip yield
US6886153B1 (en) 2001-12-21 2005-04-26 Kla-Tencor Corporation Design driven inspection or measurement for semiconductor using recipe
JP2003215060A (en) * 2002-01-22 2003-07-30 Tokyo Seimitsu Co Ltd Pattern inspection method and inspection apparatus
JP2004031709A (en) * 2002-06-27 2004-01-29 Seiko Instruments Inc Waferless measuring recipe generating system
JP4073265B2 (en) * 2002-07-09 2008-04-09 富士通株式会社 Inspection apparatus and inspection method
US6959251B2 (en) 2002-08-23 2005-10-25 Kla-Tencor Technologies, Corporation Inspection system setup techniques
JP2004117016A (en) * 2002-09-24 2004-04-15 Nec Kansai Ltd Semiconductor wafer defect inspecting apparatus
US7457736B2 (en) * 2002-11-21 2008-11-25 Synopsys, Inc. Automated creation of metrology recipes
US6882745B2 (en) * 2002-12-19 2005-04-19 Freescale Semiconductor, Inc. Method and apparatus for translating detected wafer defect coordinates to reticle coordinates using CAD data
JP2004227886A (en) * 2003-01-22 2004-08-12 Hitachi High-Technologies Corp Scanning electron microscope
JP2004296592A (en) * 2003-03-26 2004-10-21 Dainippon Screen Mfg Co Ltd Defect classification equipment, defect classification method, and program
JP2004294358A (en) * 2003-03-28 2004-10-21 Hitachi High-Technologies Corp Method and apparatus for inspecting defect
JP4230838B2 (en) * 2003-06-27 2009-02-25 株式会社日立ハイテクノロジーズ Inspection recipe setting method and defect inspection method in defect inspection apparatus
US6952653B2 (en) * 2003-04-29 2005-10-04 Kla-Tencor Technologies Corporation Single tool defect classification solution
JP2004333386A (en) * 2003-05-09 2004-11-25 Nec Corp Reticle inspection apparatus and reticle inspection method
JP4229767B2 (en) * 2003-06-30 2009-02-25 株式会社東京精密 Image defect inspection method, image defect inspection apparatus, and appearance inspection apparatus
US9002497B2 (en) * 2003-07-03 2015-04-07 Kla-Tencor Technologies Corp. Methods and systems for inspection of wafers and reticles using designer intent data
US7135344B2 (en) * 2003-07-11 2006-11-14 Applied Materials, Israel, Ltd. Design-based monitoring
KR20050072166A (en) * 2004-01-02 2005-07-11 삼성전자주식회사 Method for testing wafer
JP4771714B2 (en) * 2004-02-23 2011-09-14 株式会社Ｎｇｒ Pattern inspection apparatus and method
US7194709B2 (en) * 2004-03-05 2007-03-20 Keith John Brankner Automatic alignment of integrated circuit and design layout of integrated circuit to more accurately assess the impact of anomalies
JP4778685B2 (en) * 2004-03-10 2011-09-21 株式会社日立ハイテクノロジーズ Pattern shape evaluation method and apparatus for semiconductor device
JP2005283326A (en) 2004-03-30 2005-10-13 Hitachi High-Technologies Corp Defect review method and its device
US7137083B2 (en) * 2004-04-01 2006-11-14 Verigy Ipco Verification of integrated circuit tests using test simulation and integrated circuit simulation with simulated failure
JP4154374B2 (en) * 2004-08-25 2008-09-24 株式会社日立ハイテクノロジーズ Pattern matching device and scanning electron microscope using the same
US7760347B2 (en) * 2005-05-13 2010-07-20 Applied Materials, Inc. Design-based method for grouping systematic defects in lithography pattern writing system
KR101613048B1 (en) * 2005-11-18 2016-04-15 케이엘에이-텐코 코포레이션 Methods and systems for utilizing design data in combination with inspection data

Similar Documents

Publication Publication Date Title
JP2014167476A5 (en)
JP2016106228A5 (en)
TWI600897B (en) Computer-implemented method, non-transitory computer-readable medium, and system for detecting defects on a wafer
JP6789920B2 (en) Determining the coordinates of the area of interest on the object to be inspected
JP6220061B2 (en) Wafer inspection using free form protection area
TWI688022B (en) Determining a position of a defect in an electron beam image
JP6807844B2 (en) Inspection vs. design alignment with built-in target
US7801353B2 (en) Method for defect detection using computer aided design data
TWI643280B (en) Defect detection using structural information
JP2016502750A5 (en)
JP2014530495A (en) Determination of design coordinates for wafer defects
TW201517192A (en) Image inspection method of die to database
JP2013161485A5 (en)
JP2013243128A5 (en)
JP2016528497A (en) Monitoring changes in photomask defects
JP5647999B2 (en) Pattern matching apparatus, inspection system, and computer program
JP2014534452A5 (en)
TWI593955B (en) Light deflection detection module and measurement and calibration method using the same
JP4594833B2 (en) Defect inspection equipment
JP2011141285A5 (en)
JP2012149895A (en) Defect inspection device and defect inspection method
KR101661023B1 (en) Method for detecting defect of pattern
JP2011169711A (en) Radiation inspection processor, and method and program for the same
JP2006275626A (en) X-ray inspection device, x-ray inspection method and x-ray inspection program
JP2015203659A (en) Inspection device