JP2014127475A5 - - Google Patents

Download PDF

Info

Publication number
JP2014127475A5
JP2014127475A5 JP2012280480A JP2012280480A JP2014127475A5 JP 2014127475 A5 JP2014127475 A5 JP 2014127475A5 JP 2012280480 A JP2012280480 A JP 2012280480A JP 2012280480 A JP2012280480 A JP 2012280480A JP 2014127475 A5 JP2014127475 A5 JP 2014127475A5
Authority
JP
Japan
Prior art keywords
control gate
semiconductor device
length
manufacturing
height
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2012280480A
Other languages
English (en)
Japanese (ja)
Other versions
JP6173684B2 (ja
JP2014127475A (ja
Filing date
Publication date
Application filed filed Critical
Priority claimed from JP2012280480A external-priority patent/JP6173684B2/ja
Priority to JP2012280480A priority Critical patent/JP6173684B2/ja
Priority to TW102121548A priority patent/TWI500085B/zh
Priority to CN201310330352.9A priority patent/CN103904033B/zh
Priority to US13/958,685 priority patent/US9099349B2/en
Priority to KR1020130093469A priority patent/KR101513596B1/ko
Publication of JP2014127475A publication Critical patent/JP2014127475A/ja
Publication of JP2014127475A5 publication Critical patent/JP2014127475A5/ja
Publication of JP6173684B2 publication Critical patent/JP6173684B2/ja
Application granted granted Critical
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

JP2012280480A 2012-12-25 2012-12-25 半導体装置の製造方法 Active JP6173684B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2012280480A JP6173684B2 (ja) 2012-12-25 2012-12-25 半導体装置の製造方法
TW102121548A TWI500085B (zh) 2012-12-25 2013-06-18 Manufacturing method of semiconductor device
CN201310330352.9A CN103904033B (zh) 2012-12-25 2013-08-01 半导体装置的制造方法
US13/958,685 US9099349B2 (en) 2012-12-25 2013-08-05 Semiconductor device manufacturing method
KR1020130093469A KR101513596B1 (ko) 2012-12-25 2013-08-07 반도체 장치의 제조 방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2012280480A JP6173684B2 (ja) 2012-12-25 2012-12-25 半導体装置の製造方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2017121831A Division JP6363266B2 (ja) 2017-06-22 2017-06-22 半導体装置の製造方法

Publications (3)

Publication Number Publication Date
JP2014127475A JP2014127475A (ja) 2014-07-07
JP2014127475A5 true JP2014127475A5 (enExample) 2016-06-02
JP6173684B2 JP6173684B2 (ja) 2017-08-02

Family

ID=50973676

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2012280480A Active JP6173684B2 (ja) 2012-12-25 2012-12-25 半導体装置の製造方法

Country Status (5)

Country Link
US (1) US9099349B2 (enExample)
JP (1) JP6173684B2 (enExample)
KR (1) KR101513596B1 (enExample)
CN (1) CN103904033B (enExample)
TW (1) TWI500085B (enExample)

Families Citing this family (89)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9132436B2 (en) 2012-09-21 2015-09-15 Applied Materials, Inc. Chemical control features in wafer process equipment
US10256079B2 (en) 2013-02-08 2019-04-09 Applied Materials, Inc. Semiconductor processing systems having multiple plasma configurations
US9362130B2 (en) 2013-03-01 2016-06-07 Applied Materials, Inc. Enhanced etching processes using remote plasma sources
US9202785B2 (en) * 2013-11-08 2015-12-01 Taiwan Semiconductor Manufacturing Company, Ltd. Three dimensional integrated circuit capacitor having vias
US9309598B2 (en) 2014-05-28 2016-04-12 Applied Materials, Inc. Oxide and metal removal
US9455267B2 (en) * 2014-09-19 2016-09-27 Sandisk Technologies Llc Three dimensional NAND device having nonlinear control gate electrodes and method of making thereof
US9966240B2 (en) 2014-10-14 2018-05-08 Applied Materials, Inc. Systems and methods for internal surface conditioning assessment in plasma processing equipment
US9355922B2 (en) 2014-10-14 2016-05-31 Applied Materials, Inc. Systems and methods for internal surface conditioning in plasma processing equipment
US11637002B2 (en) 2014-11-26 2023-04-25 Applied Materials, Inc. Methods and systems to enhance process uniformity
US10573496B2 (en) 2014-12-09 2020-02-25 Applied Materials, Inc. Direct outlet toroidal plasma source
US20160225652A1 (en) 2015-02-03 2016-08-04 Applied Materials, Inc. Low temperature chuck for plasma processing systems
US9728437B2 (en) 2015-02-03 2017-08-08 Applied Materials, Inc. High temperature chuck for plasma processing systems
US9356034B1 (en) 2015-02-05 2016-05-31 Sandisk Technologies Inc. Multilevel interconnect structure and methods of manufacturing the same
CN106206447A (zh) * 2015-05-05 2016-12-07 中芯国际集成电路制造(上海)有限公司 3d nand器件的形成方法
KR102428311B1 (ko) 2015-08-06 2022-08-02 삼성전자주식회사 반도체 장치
US9691645B2 (en) 2015-08-06 2017-06-27 Applied Materials, Inc. Bolted wafer chuck thermal management systems and methods for wafer processing systems
US9741593B2 (en) 2015-08-06 2017-08-22 Applied Materials, Inc. Thermal management systems and methods for wafer processing systems
US9349605B1 (en) 2015-08-07 2016-05-24 Applied Materials, Inc. Oxide etch selectivity systems and methods
US9455271B1 (en) 2015-08-13 2016-09-27 Kabushiki Kaisha Toshiba Semiconductor memory device and method of manufacturing semiconductor memory device and method of layouting auxiliary pattern
US9653303B2 (en) 2015-08-18 2017-05-16 Kabushiki Kaisha Toshiba Method of manufacturing semiconductor device
US10504700B2 (en) 2015-08-27 2019-12-10 Applied Materials, Inc. Plasma etching systems and methods with secondary plasma injection
US10147736B2 (en) 2015-09-03 2018-12-04 Toshiba Memory Corporation Semiconductor memory device and method for manufacturing same
US9911749B2 (en) 2015-09-09 2018-03-06 Toshiba Memory Corporation Stacked 3D semiconductor memory structure
KR102611438B1 (ko) 2016-01-07 2023-12-08 삼성전자주식회사 반도체 메모리 소자
KR102535855B1 (ko) * 2016-02-01 2023-05-24 에스케이하이닉스 주식회사 반도체 장치
US9859363B2 (en) * 2016-02-16 2018-01-02 Sandisk Technologies Llc Self-aligned isolation dielectric structures for a three-dimensional memory device
KR102630180B1 (ko) 2016-02-22 2024-01-26 삼성전자주식회사 수직형 메모리 장치의 레이아웃 검증 방법
US9941209B2 (en) * 2016-03-11 2018-04-10 Micron Technology, Inc. Conductive structures, systems and devices including conductive structures and related methods
US10522371B2 (en) 2016-05-19 2019-12-31 Applied Materials, Inc. Systems and methods for improved semiconductor etching and component protection
US10504754B2 (en) 2016-05-19 2019-12-10 Applied Materials, Inc. Systems and methods for improved semiconductor etching and component protection
US10103161B2 (en) * 2016-06-28 2018-10-16 Sandisk Technologies Llc Offset backside contact via structures for a three-dimensional memory device
US9917093B2 (en) * 2016-06-28 2018-03-13 Sandisk Technologies Llc Inter-plane offset in backside contact via structures for a three-dimensional memory device
EP3420590B1 (en) * 2016-06-28 2020-01-29 SanDisk Technologies LLC Offset backside contact via structures for a three-dimensional memory device
US9865484B1 (en) 2016-06-29 2018-01-09 Applied Materials, Inc. Selective etch using material modification and RF pulsing
US10629473B2 (en) 2016-09-09 2020-04-21 Applied Materials, Inc. Footing removal for nitride spacer
US10546729B2 (en) 2016-10-04 2020-01-28 Applied Materials, Inc. Dual-channel showerhead with improved profile
US9934942B1 (en) 2016-10-04 2018-04-03 Applied Materials, Inc. Chamber with flow-through source
US10163696B2 (en) 2016-11-11 2018-12-25 Applied Materials, Inc. Selective cobalt removal for bottom up gapfill
US10026621B2 (en) 2016-11-14 2018-07-17 Applied Materials, Inc. SiN spacer profile patterning
US10083982B2 (en) * 2016-11-17 2018-09-25 Sandisk Technologies Llc Three-dimensional memory device having select gate electrode that is thicker than word lines and method of making thereof
US9972641B1 (en) * 2016-11-17 2018-05-15 Sandisk Technologies Llc Three-dimensional memory device having a multilevel drain select gate electrode and method of making thereof
US10566206B2 (en) 2016-12-27 2020-02-18 Applied Materials, Inc. Systems and methods for anisotropic material breakthrough
JP2018125476A (ja) 2017-02-03 2018-08-09 東芝メモリ株式会社 テンプレート、インプリント装置および半導体装置の製造方法
US10431429B2 (en) 2017-02-03 2019-10-01 Applied Materials, Inc. Systems and methods for radial and azimuthal control of plasma uniformity
US10319739B2 (en) 2017-02-08 2019-06-11 Applied Materials, Inc. Accommodating imperfectly aligned memory holes
US10943834B2 (en) 2017-03-13 2021-03-09 Applied Materials, Inc. Replacement contact process
US11276559B2 (en) 2017-05-17 2022-03-15 Applied Materials, Inc. Semiconductor processing chamber for multiple precursor flow
US11276590B2 (en) 2017-05-17 2022-03-15 Applied Materials, Inc. Multi-zone semiconductor substrate supports
JP7176860B6 (ja) 2017-05-17 2022-12-16 アプライド マテリアルズ インコーポレイテッド 前駆体の流れを改善する半導体処理チャンバ
US10497579B2 (en) 2017-05-31 2019-12-03 Applied Materials, Inc. Water-free etching methods
US10920320B2 (en) 2017-06-16 2021-02-16 Applied Materials, Inc. Plasma health determination in semiconductor substrate processing reactors
US10541246B2 (en) 2017-06-26 2020-01-21 Applied Materials, Inc. 3D flash memory cells which discourage cross-cell electrical tunneling
US10727080B2 (en) 2017-07-07 2020-07-28 Applied Materials, Inc. Tantalum-containing material removal
US10541184B2 (en) 2017-07-11 2020-01-21 Applied Materials, Inc. Optical emission spectroscopic techniques for monitoring etching
US10043674B1 (en) 2017-08-04 2018-08-07 Applied Materials, Inc. Germanium etching systems and methods
US10297458B2 (en) 2017-08-07 2019-05-21 Applied Materials, Inc. Process window widening using coated parts in plasma etch processes
KR102432379B1 (ko) 2017-10-16 2022-08-12 삼성전자주식회사 반도체 소자
US10903054B2 (en) 2017-12-19 2021-01-26 Applied Materials, Inc. Multi-zone gas distribution systems and methods
US11328909B2 (en) 2017-12-22 2022-05-10 Applied Materials, Inc. Chamber conditioning and removal processes
US10854426B2 (en) 2018-01-08 2020-12-01 Applied Materials, Inc. Metal recess for semiconductor structures
US10964512B2 (en) 2018-02-15 2021-03-30 Applied Materials, Inc. Semiconductor processing chamber multistage mixing apparatus and methods
US10679870B2 (en) 2018-02-15 2020-06-09 Applied Materials, Inc. Semiconductor processing chamber multistage mixing apparatus
TWI716818B (zh) 2018-02-28 2021-01-21 美商應用材料股份有限公司 形成氣隙的系統及方法
US10593560B2 (en) 2018-03-01 2020-03-17 Applied Materials, Inc. Magnetic induction plasma source for semiconductor processes and equipment
US10319600B1 (en) 2018-03-12 2019-06-11 Applied Materials, Inc. Thermal silicon etch
US10497573B2 (en) 2018-03-13 2019-12-03 Applied Materials, Inc. Selective atomic layer etching of semiconductor materials
US10573527B2 (en) 2018-04-06 2020-02-25 Applied Materials, Inc. Gas-phase selective etching systems and methods
US10490406B2 (en) 2018-04-10 2019-11-26 Appled Materials, Inc. Systems and methods for material breakthrough
WO2019199995A1 (en) * 2018-04-11 2019-10-17 Dolby Laboratories Licensing Corporation Perceptually-based loss functions for audio encoding and decoding based on machine learning
CN108493191B (zh) * 2018-04-12 2019-06-11 长江存储科技有限责任公司 形成三维存储器件的栅极隔槽的方法及其使用的光掩模
US10699879B2 (en) 2018-04-17 2020-06-30 Applied Materials, Inc. Two piece electrode assembly with gap for plasma control
US10886137B2 (en) 2018-04-30 2021-01-05 Applied Materials, Inc. Selective nitride removal
JP2019220612A (ja) 2018-06-21 2019-12-26 キオクシア株式会社 半導体記憶装置
US10872778B2 (en) 2018-07-06 2020-12-22 Applied Materials, Inc. Systems and methods utilizing solid-phase etchants
US10755941B2 (en) 2018-07-06 2020-08-25 Applied Materials, Inc. Self-limiting selective etching systems and methods
US10672642B2 (en) 2018-07-24 2020-06-02 Applied Materials, Inc. Systems and methods for pedestal configuration
US10892198B2 (en) 2018-09-14 2021-01-12 Applied Materials, Inc. Systems and methods for improved performance in semiconductor processing
US11049755B2 (en) 2018-09-14 2021-06-29 Applied Materials, Inc. Semiconductor substrate supports with embedded RF shield
US11062887B2 (en) 2018-09-17 2021-07-13 Applied Materials, Inc. High temperature RF heater pedestals
US11417534B2 (en) 2018-09-21 2022-08-16 Applied Materials, Inc. Selective material removal
US11682560B2 (en) 2018-10-11 2023-06-20 Applied Materials, Inc. Systems and methods for hafnium-containing film removal
US11121002B2 (en) 2018-10-24 2021-09-14 Applied Materials, Inc. Systems and methods for etching metals and metal derivatives
US11437242B2 (en) 2018-11-27 2022-09-06 Applied Materials, Inc. Selective removal of silicon-containing materials
US11721527B2 (en) 2019-01-07 2023-08-08 Applied Materials, Inc. Processing chamber mixing systems
US10920319B2 (en) 2019-01-11 2021-02-16 Applied Materials, Inc. Ceramic showerheads with conductive electrodes
CN109801922B (zh) * 2019-01-31 2020-10-20 长江存储科技有限责任公司 一种形成三维存储器的方法及三维存储器
US11903214B2 (en) * 2020-07-16 2024-02-13 Taiwan Semiconductor Manufacturing Co., Ltd. Three-dimensional ferroelectric random access memory devices and methods of forming
JP2022184482A (ja) 2021-06-01 2022-12-13 キオクシア株式会社 半導体記憶装置
US20250107110A1 (en) * 2023-09-21 2025-03-27 Macronix International Co., Ltd. Capacitor structure

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005085938A (ja) 2003-09-08 2005-03-31 Fujio Masuoka メモリセルユニット、不揮発性半導体装置およびそれを備えてなる液晶表示装置
KR100661186B1 (ko) * 2005-03-23 2006-12-22 주식회사 하이닉스반도체 플래쉬 메모리 소자의 제조방법
TWI281232B (en) * 2005-10-17 2007-05-11 Promos Technologies Inc Method for fabricating nonvolatile memory array
JP4822841B2 (ja) * 2005-12-28 2011-11-24 株式会社東芝 半導体記憶装置及びその製造方法
US7780862B2 (en) * 2006-03-21 2010-08-24 Applied Materials, Inc. Device and method for etching flash memory gate stacks comprising high-k dielectric
JP5016832B2 (ja) * 2006-03-27 2012-09-05 株式会社東芝 不揮発性半導体記憶装置及びその製造方法
KR101524830B1 (ko) * 2009-07-20 2015-06-03 삼성전자주식회사 반도체 소자 및 그 형성방법
US9111799B2 (en) * 2010-05-25 2015-08-18 Samsung Electronics Co., Ltd. Semiconductor device with a pick-up region
JP2012015343A (ja) * 2010-07-01 2012-01-19 Hitachi High-Technologies Corp プラズマエッチング方法
US20120168858A1 (en) * 2010-12-30 2012-07-05 Hynix Semiconductor Inc. Non-volatile memory device and method of fabricating the same

Similar Documents

Publication Publication Date Title
JP2014127475A5 (enExample)
CN106847821B (zh) 半导体结构及其形成方法
US20200258895A1 (en) 3-dimensional junction semiconductor memory device and fabrication method thereof
US20200258902A1 (en) 3-dimensional junction semiconductor memory device and fabrication method thereof
WO2011081438A3 (ko) 3차원 구조를 가지는 메모리 및 이의 제조방법
JP2014057067A5 (enExample)
WO2013176960A3 (en) Multi-level contact to a 3d memory array and method of making
US9449966B2 (en) Three-dimensional semiconductor device and method of manufacturing the same
US9076797B2 (en) 3D memory array
KR20140075340A (ko) 반도체 장치 및 그 제조 방법
JP2013115436A5 (enExample)
JP2012244180A5 (enExample)
WO2011056529A3 (en) Apparatus and methods of forming memory lines and structures using double sidewall patterning for four times half pitch relief patterning
KR20140018540A (ko) 비휘발성 메모리 장치 및 그 제조 방법
WO2014138493A3 (en) Substrate-less interproser technology for a stacked silicon interconnect technology (ssit) product
JP2010245160A5 (enExample)
JP2014187329A (ja) 半導体記憶装置の製造方法及び半導体記憶装置
TW200627631A (en) Non-volatile memory and manufacturing method and operating method thereof
US8815655B2 (en) Method for manufacturing semiconductor device
EP3203501A3 (en) Nonvolatile memory device and method for manufacturing the same
TW201613151A (en) Resistive random access memory and method for manufacturing the same
CN105655485A (zh) 电阻式随机存取存储器及其制造方法
US9219071B1 (en) Semiconductor device
TW201613152A (en) Three-dimensional semiconductor device
CN108493191A (zh) 形成三维存储器件的栅极隔槽的方法及其使用的光掩模