JP2014099547A - 電力半導体モジュールおよびその製造方法 - Google Patents

電力半導体モジュールおよびその製造方法 Download PDF

Info

Publication number
JP2014099547A
JP2014099547A JP2012251225A JP2012251225A JP2014099547A JP 2014099547 A JP2014099547 A JP 2014099547A JP 2012251225 A JP2012251225 A JP 2012251225A JP 2012251225 A JP2012251225 A JP 2012251225A JP 2014099547 A JP2014099547 A JP 2014099547A
Authority
JP
Japan
Prior art keywords
frame portion
power semiconductor
frame
semiconductor module
semiconductor element
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2012251225A
Other languages
English (en)
Japanese (ja)
Other versions
JP2014099547A5 (enExample
Inventor
Masataka Shiromizu
政孝 白水
Akira Sho
明 商
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP2012251225A priority Critical patent/JP2014099547A/ja
Priority to US14/027,014 priority patent/US9171774B2/en
Priority to KR1020130135224A priority patent/KR101513961B1/ko
Priority to CN201310575019.4A priority patent/CN103824844A/zh
Publication of JP2014099547A publication Critical patent/JP2014099547A/ja
Publication of JP2014099547A5 publication Critical patent/JP2014099547A5/ja
Priority to US14/796,843 priority patent/US9252028B2/en
Pending legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/01—Manufacture or treatment
    • H10W70/04—Manufacture or treatment of leadframes
    • H10W70/041—Connecting or disconnecting interconnections to or from leadframes, e.g. connecting bond wires or bumps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00—Arrangements for thermal protection or thermal control
    • H10W40/20—Arrangements for cooling
    • H10W40/25—Arrangements for cooling characterised by their materials
    • H10W40/255—Arrangements for cooling characterised by their materials having a laminate or multilayered structure, e.g. direct bond copper [DBC] ceramic substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00—Arrangements for thermal protection or thermal control
    • H10W40/70—Fillings or auxiliary members in containers or in encapsulations for thermal protection or control
    • H10W40/77—Auxiliary members characterised by their shape
    • H10W40/778—Auxiliary members characterised by their shape in encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/01—Manufacture or treatment
    • H10W70/04—Manufacture or treatment of leadframes
    • H10W70/048—Mechanical treatments, e.g. punching, cutting, deforming or cold welding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/40—Leadframes
    • H10W70/481—Leadframes for devices being provided for in groups H10D8/00 - H10D48/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/811—Multiple chips on leadframes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W95/00—Packaging processes not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/075—Connecting or disconnecting of bond wires
    • H10W72/07541—Controlling the environment, e.g. atmosphere composition or temperature
    • H10W72/07552—Controlling the environment, e.g. atmosphere composition or temperature changes in structures or sizes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/521—Structures or relative sizes of bond wires
    • H10W72/527—Multiple bond wires having different sizes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/531—Shapes of wire connectors
    • H10W72/5366—Shapes of wire connectors the bond wires having kinks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/541—Dispositions of bond wires
    • H10W72/547—Dispositions of multiple bond wires
    • H10W72/5475—Dispositions of multiple bond wires multiple bond wires connected to common bond pads at both ends of the wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/921—Structures or relative sizes of bond pads
    • H10W72/926—Multiple bond pads having different sizes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/753—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between laterally-adjacent chips
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/756—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked lead frame, conducting package substrate or heat sink

Landscapes

  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Wire Bonding (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Ceramic Engineering (AREA)
  • Inverter Devices (AREA)
JP2012251225A 2012-11-15 2012-11-15 電力半導体モジュールおよびその製造方法 Pending JP2014099547A (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2012251225A JP2014099547A (ja) 2012-11-15 2012-11-15 電力半導体モジュールおよびその製造方法
US14/027,014 US9171774B2 (en) 2012-11-15 2013-09-13 Power semiconductor module and method of manufacturing the same
KR1020130135224A KR101513961B1 (ko) 2012-11-15 2013-11-08 전력 반도체 모듈 및 그 제조방법
CN201310575019.4A CN103824844A (zh) 2012-11-15 2013-11-15 功率半导体模块及其制造方法
US14/796,843 US9252028B2 (en) 2012-11-15 2015-07-10 Power semiconductor module and method of manufacturing the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2012251225A JP2014099547A (ja) 2012-11-15 2012-11-15 電力半導体モジュールおよびその製造方法

Publications (2)

Publication Number Publication Date
JP2014099547A true JP2014099547A (ja) 2014-05-29
JP2014099547A5 JP2014099547A5 (enExample) 2015-01-15

Family

ID=50680929

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2012251225A Pending JP2014099547A (ja) 2012-11-15 2012-11-15 電力半導体モジュールおよびその製造方法

Country Status (4)

Country Link
US (2) US9171774B2 (enExample)
JP (1) JP2014099547A (enExample)
KR (1) KR101513961B1 (enExample)
CN (1) CN103824844A (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20170063926A (ko) * 2014-11-07 2017-06-08 미쓰비시덴키 가부시키가이샤 전력용 반도체 장치 및 그 제조 방법
JP2020053611A (ja) * 2018-09-28 2020-04-02 三菱電機株式会社 半導体モジュール、および、半導体モジュールの製造方法

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9362215B2 (en) 2010-12-13 2016-06-07 Infineon Technologies Americas Corp. Power quad flat no-lead (PQFN) semiconductor package with leadframe islands for multi-phase power inverter
US9620954B2 (en) 2010-12-13 2017-04-11 Infineon Technologies Americas Corp. Semiconductor package having an over-temperature protection circuit utilizing multiple temperature threshold values
US9443795B2 (en) 2010-12-13 2016-09-13 Infineon Technologies Americas Corp. Power quad flat no-lead (PQFN) package having bootstrap diodes on a common integrated circuit (IC)
US9711437B2 (en) 2010-12-13 2017-07-18 Infineon Technologies Americas Corp. Semiconductor package having multi-phase power inverter with internal temperature sensor
US9524928B2 (en) 2010-12-13 2016-12-20 Infineon Technologies Americas Corp. Power quad flat no-lead (PQFN) package having control and driver circuits
US8587101B2 (en) 2010-12-13 2013-11-19 International Rectifier Corporation Multi-chip module (MCM) power quad flat no-lead (PQFN) semiconductor package utilizing a leadframe for electrical interconnections
US9659845B2 (en) 2010-12-13 2017-05-23 Infineon Technologies Americas Corp. Power quad flat no-lead (PQFN) package in a single shunt inverter circuit
US9355995B2 (en) 2010-12-13 2016-05-31 Infineon Technologies Americas Corp. Semiconductor packages utilizing leadframe panels with grooves in connecting bars
US9449957B2 (en) 2010-12-13 2016-09-20 Infineon Technologies Americas Corp. Control and driver circuits on a power quad flat no-lead (PQFN) leadframe
US9627302B2 (en) * 2014-01-10 2017-04-18 Mitsubishi Electric Corporation Power semiconductor device
DE102015102041A1 (de) * 2015-02-12 2016-08-18 Danfoss Silicon Power Gmbh Leistungsmodul
CN105990266B (zh) * 2015-02-26 2018-12-07 台达电子工业股份有限公司 功率转换电路的封装模块及其制造方法
US10679929B2 (en) 2017-07-28 2020-06-09 Advanced Semiconductor Engineering Korea, Inc. Semiconductor package device and method of manufacturing the same
US10396774B2 (en) 2017-09-14 2019-08-27 Hestia Power Inc. Intelligent power module operable to be driven by negative gate voltage
TWI640151B (zh) * 2017-09-20 2018-11-01 瀚薪科技股份有限公司 Negative voltage gate driven smart power module
US10714418B2 (en) * 2018-03-26 2020-07-14 Texas Instruments Incorporated Electronic device having inverted lead pins
CN109449150A (zh) * 2018-12-11 2019-03-08 杰群电子科技（东莞）有限公司 带引脚封装、无引脚封装的功率模块及其对应加工方法
TWI693682B (zh) * 2019-08-28 2020-05-11 財團法人工業技術研究院 電子元件封裝結構
EP4586312A1 (en) * 2024-01-09 2025-07-16 Shenzhen STS Microelectronics Co., Ltd. Multilayer substrates and methods for manufacturing same, power modules and methods for manufacturing same, and electrical systems

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09186269A (ja) * 1996-01-05 1997-07-15 Hitachi Ltd 半導体装置
JPH09283681A (ja) * 1996-04-16 1997-10-31 Hitachi Ltd 半導体装置
JP2003124437A (ja) * 2001-10-19 2003-04-25 Mitsubishi Electric Corp 半導体装置
JP2005005638A (ja) * 2003-04-15 2005-01-06 Fuji Electric Fa Components & Systems Co Ltd 半導体モジュールおよびその製造方法
JP2006080300A (ja) * 2004-09-09 2006-03-23 Kokusan Denki Co Ltd リードフレーム及びその製造方法
JP2008060256A (ja) * 2006-08-30 2008-03-13 Renesas Technology Corp 半導体装置
WO2009110376A1 (ja) * 2008-03-06 2009-09-11 三菱電機株式会社 リードフレーム基板、半導体モジュール、及びリードフレーム基板の製造方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19735531A1 (de) * 1997-08-16 1999-02-18 Abb Research Ltd Leistungshalbleitermodul mit in Submodulen integrierten Kühlern
KR100723454B1 (ko) 2004-08-21 2007-05-30 페어차일드코리아반도체 주식회사 높은 열 방출 능력을 구비한 전력용 모듈 패키지 및 그제조방법
US6870243B2 (en) * 2002-11-27 2005-03-22 Freescale Semiconductor, Inc. Thin GaAs die with copper back-metal structure
JP4146785B2 (ja) 2003-11-19 2008-09-10 三菱電機株式会社 電力用半導体装置
KR101524545B1 (ko) 2008-02-28 2015-06-01 페어차일드코리아반도체 주식회사 전력 소자 패키지 및 그 제조 방법
EP2680305A3 (en) * 2012-06-29 2014-02-26 Samsung Electro-Mechanics Co., Ltd Semiconductor package

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09186269A (ja) * 1996-01-05 1997-07-15 Hitachi Ltd 半導体装置
JPH09283681A (ja) * 1996-04-16 1997-10-31 Hitachi Ltd 半導体装置
JP2003124437A (ja) * 2001-10-19 2003-04-25 Mitsubishi Electric Corp 半導体装置
JP2005005638A (ja) * 2003-04-15 2005-01-06 Fuji Electric Fa Components & Systems Co Ltd 半導体モジュールおよびその製造方法
JP2006080300A (ja) * 2004-09-09 2006-03-23 Kokusan Denki Co Ltd リードフレーム及びその製造方法
JP2008060256A (ja) * 2006-08-30 2008-03-13 Renesas Technology Corp 半導体装置
WO2009110376A1 (ja) * 2008-03-06 2009-09-11 三菱電機株式会社 リードフレーム基板、半導体モジュール、及びリードフレーム基板の製造方法

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20170063926A (ko) * 2014-11-07 2017-06-08 미쓰비시덴키 가부시키가이샤 전력용 반도체 장치 및 그 제조 방법
JPWO2016072012A1 (ja) * 2014-11-07 2017-06-22 三菱電機株式会社 電力用半導体装置およびその製造方法
US9947613B2 (en) 2014-11-07 2018-04-17 Mitsubishi Electric Corporation Power semiconductor device and method for manufacturing the same
KR101928681B1 (ko) * 2014-11-07 2018-12-12 미쓰비시덴키 가부시키가이샤 전력용 반도체 장치 및 그 제조 방법
JP2020053611A (ja) * 2018-09-28 2020-04-02 三菱電機株式会社 半導体モジュール、および、半導体モジュールの製造方法

Also Published As

Publication number Publication date
US20150318189A1 (en) 2015-11-05
KR101513961B1 (ko) 2015-04-21
CN103824844A (zh) 2014-05-28
US9252028B2 (en) 2016-02-02
US20140131846A1 (en) 2014-05-15
KR20140066090A (ko) 2014-05-30
US9171774B2 (en) 2015-10-27

Similar Documents

Publication Publication Date Title
JP2014099547A (ja) 電力半導体モジュールおよびその製造方法
US11189547B2 (en) Semiconductor module and semiconductor module manufacturing method
US9391006B2 (en) Semiconductor device and method of manufacturing semiconductor device
US9917031B2 (en) Semiconductor device, and method for assembling semiconductor device
JP6522402B2 (ja) 半導体装置
US9431326B2 (en) Semiconductor device and manufacturing method thereof
JP6143884B2 (ja) パワーモジュール
JP7156025B2 (ja) 半導体装置
CN106415834A (zh) 半导体装置
US9666557B2 (en) Small footprint semiconductor package
JP2018098282A (ja) 半導体装置
US20260074448A1 (en) Transfer molded power modules and methods of manufacture
US12113002B2 (en) Plurality of transistors attached to a heat sink with a periphery notch
JP2014157927A (ja) 半導体装置及びその製造方法
JP4899481B2 (ja) 外部に露出する放熱体を上部に有する樹脂封止型半導体装置の製法
CN110959191A (zh) 半导体装置
CN102237321B (zh) 半导体装置
US20120025358A1 (en) Semiconductor element with semiconductor die and lead frames
US20150144991A1 (en) Power module package and method of manufacturing the same
JP2012238737A (ja) 半導体モジュール及びその製造方法
JP5273265B2 (ja) 電力用半導体装置
CN115206905B (zh) 半导体装置和使用该半导体装置的半导体模块
JP2013143519A (ja) 接続子および樹脂封止型半導体装置
JP6647187B2 (ja) パワーモジュールおよびその製造方法
JP2017028131A (ja) パッケージ実装体

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20141125

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20141125

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20150709

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20150728

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20150928

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20160322