JP2014099547A - 電力半導体モジュールおよびその製造方法 - Google Patents

電力半導体モジュールおよびその製造方法 Download PDF

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Publication number
JP2014099547A
JP2014099547A JP2012251225A JP2012251225A JP2014099547A JP 2014099547 A JP2014099547 A JP 2014099547A JP 2012251225 A JP2012251225 A JP 2012251225A JP 2012251225 A JP2012251225 A JP 2012251225A JP 2014099547 A JP2014099547 A JP 2014099547A
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JP
Japan
Prior art keywords
frame portion
power semiconductor
frame
semiconductor module
semiconductor element
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Pending
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JP2012251225A
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English (en)
Japanese (ja)
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JP2014099547A5 (enExample
Inventor
Masataka Shiromizu
政孝 白水
Akira Sho
明 商
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Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP2012251225A priority Critical patent/JP2014099547A/ja
Priority to US14/027,014 priority patent/US9171774B2/en
Priority to KR1020130135224A priority patent/KR101513961B1/ko
Priority to CN201310575019.4A priority patent/CN103824844A/zh
Publication of JP2014099547A publication Critical patent/JP2014099547A/ja
Publication of JP2014099547A5 publication Critical patent/JP2014099547A5/ja
Priority to US14/796,843 priority patent/US9252028B2/en
Pending legal-status Critical Current

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    • H10W70/041—
    • H10W70/60—
    • H10W40/255—
    • H10W40/778—
    • H10W70/048—
    • H10W70/481—
    • H10W90/00—
    • H10W90/811—
    • H10W95/00—
    • H10W72/07552—
    • H10W72/527—
    • H10W72/5366—
    • H10W72/5475—
    • H10W72/926—
    • H10W74/00—
    • H10W90/753—
    • H10W90/756—

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Materials Engineering (AREA)
  • Wire Bonding (AREA)
  • Inverter Devices (AREA)
JP2012251225A 2012-11-15 2012-11-15 電力半導体モジュールおよびその製造方法 Pending JP2014099547A (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2012251225A JP2014099547A (ja) 2012-11-15 2012-11-15 電力半導体モジュールおよびその製造方法
US14/027,014 US9171774B2 (en) 2012-11-15 2013-09-13 Power semiconductor module and method of manufacturing the same
KR1020130135224A KR101513961B1 (ko) 2012-11-15 2013-11-08 전력 반도체 모듈 및 그 제조방법
CN201310575019.4A CN103824844A (zh) 2012-11-15 2013-11-15 功率半导体模块及其制造方法
US14/796,843 US9252028B2 (en) 2012-11-15 2015-07-10 Power semiconductor module and method of manufacturing the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2012251225A JP2014099547A (ja) 2012-11-15 2012-11-15 電力半導体モジュールおよびその製造方法

Publications (2)

Publication Number Publication Date
JP2014099547A true JP2014099547A (ja) 2014-05-29
JP2014099547A5 JP2014099547A5 (enExample) 2015-01-15

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Family Applications (1)

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JP2012251225A Pending JP2014099547A (ja) 2012-11-15 2012-11-15 電力半導体モジュールおよびその製造方法

Country Status (4)

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US (2) US9171774B2 (enExample)
JP (1) JP2014099547A (enExample)
KR (1) KR101513961B1 (enExample)
CN (1) CN103824844A (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20170063926A (ko) * 2014-11-07 2017-06-08 미쓰비시덴키 가부시키가이샤 전력용 반도체 장치 및 그 제조 방법
JP2020053611A (ja) * 2018-09-28 2020-04-02 三菱電機株式会社 半導体モジュール、および、半導体モジュールの製造方法

Families Citing this family (18)

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US9355995B2 (en) 2010-12-13 2016-05-31 Infineon Technologies Americas Corp. Semiconductor packages utilizing leadframe panels with grooves in connecting bars
US9524928B2 (en) 2010-12-13 2016-12-20 Infineon Technologies Americas Corp. Power quad flat no-lead (PQFN) package having control and driver circuits
US9362215B2 (en) 2010-12-13 2016-06-07 Infineon Technologies Americas Corp. Power quad flat no-lead (PQFN) semiconductor package with leadframe islands for multi-phase power inverter
US9443795B2 (en) 2010-12-13 2016-09-13 Infineon Technologies Americas Corp. Power quad flat no-lead (PQFN) package having bootstrap diodes on a common integrated circuit (IC)
US9449957B2 (en) 2010-12-13 2016-09-20 Infineon Technologies Americas Corp. Control and driver circuits on a power quad flat no-lead (PQFN) leadframe
US8587101B2 (en) 2010-12-13 2013-11-19 International Rectifier Corporation Multi-chip module (MCM) power quad flat no-lead (PQFN) semiconductor package utilizing a leadframe for electrical interconnections
US9620954B2 (en) 2010-12-13 2017-04-11 Infineon Technologies Americas Corp. Semiconductor package having an over-temperature protection circuit utilizing multiple temperature threshold values
US9711437B2 (en) 2010-12-13 2017-07-18 Infineon Technologies Americas Corp. Semiconductor package having multi-phase power inverter with internal temperature sensor
US9659845B2 (en) 2010-12-13 2017-05-23 Infineon Technologies Americas Corp. Power quad flat no-lead (PQFN) package in a single shunt inverter circuit
WO2015104834A1 (ja) * 2014-01-10 2015-07-16 三菱電機株式会社 電力半導体装置
DE102015102041A1 (de) * 2015-02-12 2016-08-18 Danfoss Silicon Power Gmbh Leistungsmodul
CN105990266B (zh) * 2015-02-26 2018-12-07 台达电子工业股份有限公司 功率转换电路的封装模块及其制造方法
US10679929B2 (en) 2017-07-28 2020-06-09 Advanced Semiconductor Engineering Korea, Inc. Semiconductor package device and method of manufacturing the same
US10396774B2 (en) 2017-09-14 2019-08-27 Hestia Power Inc. Intelligent power module operable to be driven by negative gate voltage
TWI640151B (zh) * 2017-09-20 2018-11-01 瀚薪科技股份有限公司 Negative voltage gate driven smart power module
CN109449150A (zh) * 2018-12-11 2019-03-08 杰群电子科技（东莞）有限公司 带引脚封装、无引脚封装的功率模块及其对应加工方法
TWI693682B (zh) * 2019-08-28 2020-05-11 財團法人工業技術研究院 電子元件封裝結構
EP4586312A1 (en) * 2024-01-09 2025-07-16 Shenzhen STS Microelectronics Co., Ltd. Multilayer substrates and methods for manufacturing same, power modules and methods for manufacturing same, and electrical systems

Citations (7)

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Publication number Priority date Publication date Assignee Title
JPH09186269A (ja) * 1996-01-05 1997-07-15 Hitachi Ltd 半導体装置
JPH09283681A (ja) * 1996-04-16 1997-10-31 Hitachi Ltd 半導体装置
JP2003124437A (ja) * 2001-10-19 2003-04-25 Mitsubishi Electric Corp 半導体装置
JP2005005638A (ja) * 2003-04-15 2005-01-06 Fuji Electric Fa Components & Systems Co Ltd 半導体モジュールおよびその製造方法
JP2006080300A (ja) * 2004-09-09 2006-03-23 Kokusan Denki Co Ltd リードフレーム及びその製造方法
JP2008060256A (ja) * 2006-08-30 2008-03-13 Renesas Technology Corp 半導体装置
WO2009110376A1 (ja) * 2008-03-06 2009-09-11 三菱電機株式会社 リードフレーム基板、半導体モジュール、及びリードフレーム基板の製造方法

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DE19735531A1 (de) * 1997-08-16 1999-02-18 Abb Research Ltd Leistungshalbleitermodul mit in Submodulen integrierten Kühlern
KR100723454B1 (ko) 2004-08-21 2007-05-30 페어차일드코리아반도체 주식회사 높은 열 방출 능력을 구비한 전력용 모듈 패키지 및 그제조방법
US6870243B2 (en) * 2002-11-27 2005-03-22 Freescale Semiconductor, Inc. Thin GaAs die with copper back-metal structure
JP4146785B2 (ja) 2003-11-19 2008-09-10 三菱電機株式会社 電力用半導体装置
KR101524545B1 (ko) 2008-02-28 2015-06-01 페어차일드코리아반도체 주식회사 전력 소자 패키지 및 그 제조 방법
EP2680305A3 (en) * 2012-06-29 2014-02-26 Samsung Electro-Mechanics Co., Ltd Semiconductor package

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09186269A (ja) * 1996-01-05 1997-07-15 Hitachi Ltd 半導体装置
JPH09283681A (ja) * 1996-04-16 1997-10-31 Hitachi Ltd 半導体装置
JP2003124437A (ja) * 2001-10-19 2003-04-25 Mitsubishi Electric Corp 半導体装置
JP2005005638A (ja) * 2003-04-15 2005-01-06 Fuji Electric Fa Components & Systems Co Ltd 半導体モジュールおよびその製造方法
JP2006080300A (ja) * 2004-09-09 2006-03-23 Kokusan Denki Co Ltd リードフレーム及びその製造方法
JP2008060256A (ja) * 2006-08-30 2008-03-13 Renesas Technology Corp 半導体装置
WO2009110376A1 (ja) * 2008-03-06 2009-09-11 三菱電機株式会社 リードフレーム基板、半導体モジュール、及びリードフレーム基板の製造方法

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20170063926A (ko) * 2014-11-07 2017-06-08 미쓰비시덴키 가부시키가이샤 전력용 반도체 장치 및 그 제조 방법
JPWO2016072012A1 (ja) * 2014-11-07 2017-06-22 三菱電機株式会社 電力用半導体装置およびその製造方法
US9947613B2 (en) 2014-11-07 2018-04-17 Mitsubishi Electric Corporation Power semiconductor device and method for manufacturing the same
KR101928681B1 (ko) * 2014-11-07 2018-12-12 미쓰비시덴키 가부시키가이샤 전력용 반도체 장치 및 그 제조 방법
JP2020053611A (ja) * 2018-09-28 2020-04-02 三菱電機株式会社 半導体モジュール、および、半導体モジュールの製造方法

Also Published As

Publication number Publication date
KR20140066090A (ko) 2014-05-30
CN103824844A (zh) 2014-05-28
US9171774B2 (en) 2015-10-27
US20150318189A1 (en) 2015-11-05
US20140131846A1 (en) 2014-05-15
US9252028B2 (en) 2016-02-02
KR101513961B1 (ko) 2015-04-21

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