CN103824844A - 功率半导体模块及其制造方法 - Google Patents

功率半导体模块及其制造方法 Download PDF

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Publication number
CN103824844A
CN103824844A CN201310575019.4A CN201310575019A CN103824844A CN 103824844 A CN103824844 A CN 103824844A CN 201310575019 A CN201310575019 A CN 201310575019A CN 103824844 A CN103824844 A CN 103824844A
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CN
China
Prior art keywords
frame section
power semiconductor
frame
integrated circuit
wire
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Pending
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CN201310575019.4A
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English (en)
Chinese (zh)
Inventor
白水政孝
商明
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Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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Publication of CN103824844A publication Critical patent/CN103824844A/zh
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/01—Manufacture or treatment
    • H10W70/04—Manufacture or treatment of leadframes
    • H10W70/041—Connecting or disconnecting interconnections to or from leadframes, e.g. connecting bond wires or bumps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00—Arrangements for thermal protection or thermal control
    • H10W40/20—Arrangements for cooling
    • H10W40/25—Arrangements for cooling characterised by their materials
    • H10W40/255—Arrangements for cooling characterised by their materials having a laminate or multilayered structure, e.g. direct bond copper [DBC] ceramic substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00—Arrangements for thermal protection or thermal control
    • H10W40/70—Fillings or auxiliary members in containers or in encapsulations for thermal protection or control
    • H10W40/77—Auxiliary members characterised by their shape
    • H10W40/778—Auxiliary members characterised by their shape in encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/01—Manufacture or treatment
    • H10W70/04—Manufacture or treatment of leadframes
    • H10W70/048—Mechanical treatments, e.g. punching, cutting, deforming or cold welding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/40—Leadframes
    • H10W70/481—Leadframes for devices being provided for in groups H10D8/00 - H10D48/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/811—Multiple chips on leadframes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W95/00—Packaging processes not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/075—Connecting or disconnecting of bond wires
    • H10W72/07541—Controlling the environment, e.g. atmosphere composition or temperature
    • H10W72/07552—Controlling the environment, e.g. atmosphere composition or temperature changes in structures or sizes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/521—Structures or relative sizes of bond wires
    • H10W72/527—Multiple bond wires having different sizes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/531—Shapes of wire connectors
    • H10W72/5366—Shapes of wire connectors the bond wires having kinks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/541—Dispositions of bond wires
    • H10W72/547—Dispositions of multiple bond wires
    • H10W72/5475—Dispositions of multiple bond wires multiple bond wires connected to common bond pads at both ends of the wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/921—Structures or relative sizes of bond pads
    • H10W72/926—Multiple bond pads having different sizes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/753—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between laterally-adjacent chips
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/756—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked lead frame, conducting package substrate or heat sink

Landscapes

  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Inverter Devices (AREA)
  • Wire Bonding (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Ceramic Engineering (AREA)
CN201310575019.4A 2012-11-15 2013-11-15 功率半导体模块及其制造方法 Pending CN103824844A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2012-251225 2012-11-15
JP2012251225A JP2014099547A (ja) 2012-11-15 2012-11-15 電力半導体モジュールおよびその製造方法

Publications (1)

Publication Number Publication Date
CN103824844A true CN103824844A (zh) 2014-05-28

Family

ID=50680929

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201310575019.4A Pending CN103824844A (zh) 2012-11-15 2013-11-15 功率半导体模块及其制造方法

Country Status (4)

Country Link
US (2) US9171774B2 (enExample)
JP (1) JP2014099547A (enExample)
KR (1) KR101513961B1 (enExample)
CN (1) CN103824844A (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107078127A (zh) * 2014-11-07 2017-08-18 三菱电机株式会社 电力用半导体装置及其制造方法
CN109449150A (zh) * 2018-12-11 2019-03-08 杰群电子科技（东莞）有限公司 带引脚封装、无引脚封装的功率模块及其对应加工方法
CN111771277A (zh) * 2018-03-26 2020-10-13 德克萨斯仪器股份有限公司 具有倒置的引线引脚的电子器件

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9362215B2 (en) 2010-12-13 2016-06-07 Infineon Technologies Americas Corp. Power quad flat no-lead (PQFN) semiconductor package with leadframe islands for multi-phase power inverter
US9620954B2 (en) 2010-12-13 2017-04-11 Infineon Technologies Americas Corp. Semiconductor package having an over-temperature protection circuit utilizing multiple temperature threshold values
US9443795B2 (en) 2010-12-13 2016-09-13 Infineon Technologies Americas Corp. Power quad flat no-lead (PQFN) package having bootstrap diodes on a common integrated circuit (IC)
US9711437B2 (en) 2010-12-13 2017-07-18 Infineon Technologies Americas Corp. Semiconductor package having multi-phase power inverter with internal temperature sensor
US9524928B2 (en) 2010-12-13 2016-12-20 Infineon Technologies Americas Corp. Power quad flat no-lead (PQFN) package having control and driver circuits
US8587101B2 (en) 2010-12-13 2013-11-19 International Rectifier Corporation Multi-chip module (MCM) power quad flat no-lead (PQFN) semiconductor package utilizing a leadframe for electrical interconnections
US9659845B2 (en) 2010-12-13 2017-05-23 Infineon Technologies Americas Corp. Power quad flat no-lead (PQFN) package in a single shunt inverter circuit
US9355995B2 (en) 2010-12-13 2016-05-31 Infineon Technologies Americas Corp. Semiconductor packages utilizing leadframe panels with grooves in connecting bars
US9449957B2 (en) 2010-12-13 2016-09-20 Infineon Technologies Americas Corp. Control and driver circuits on a power quad flat no-lead (PQFN) leadframe
US9627302B2 (en) * 2014-01-10 2017-04-18 Mitsubishi Electric Corporation Power semiconductor device
DE102015102041A1 (de) * 2015-02-12 2016-08-18 Danfoss Silicon Power Gmbh Leistungsmodul
CN105990266B (zh) * 2015-02-26 2018-12-07 台达电子工业股份有限公司 功率转换电路的封装模块及其制造方法
US10679929B2 (en) 2017-07-28 2020-06-09 Advanced Semiconductor Engineering Korea, Inc. Semiconductor package device and method of manufacturing the same
US10396774B2 (en) 2017-09-14 2019-08-27 Hestia Power Inc. Intelligent power module operable to be driven by negative gate voltage
TWI640151B (zh) * 2017-09-20 2018-11-01 瀚薪科技股份有限公司 Negative voltage gate driven smart power module
JP2020053611A (ja) * 2018-09-28 2020-04-02 三菱電機株式会社 半導体モジュール、および、半導体モジュールの製造方法
TWI693682B (zh) * 2019-08-28 2020-05-11 財團法人工業技術研究院 電子元件封裝結構
EP4586312A1 (en) * 2024-01-09 2025-07-16 Shenzhen STS Microelectronics Co., Ltd. Multilayer substrates and methods for manufacturing same, power modules and methods for manufacturing same, and electrical systems

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09283681A (ja) * 1996-04-16 1997-10-31 Hitachi Ltd 半導体装置
CN1208960A (zh) * 1997-08-16 1999-02-24 Abb研究有限公司 具有以亚模块方式集成的冷却器的功率半导体模块
US20030075783A1 (en) * 2001-10-19 2003-04-24 Mitsubishi Denki Kabushiki Kaisha Semiconductor device
JP2005005638A (ja) * 2003-04-15 2005-01-06 Fuji Electric Fa Components & Systems Co Ltd 半導体モジュールおよびその製造方法
JP2006080300A (ja) * 2004-09-09 2006-03-23 Kokusan Denki Co Ltd リードフレーム及びその製造方法

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JPH09186269A (ja) * 1996-01-05 1997-07-15 Hitachi Ltd 半導体装置
KR100723454B1 (ko) 2004-08-21 2007-05-30 페어차일드코리아반도체 주식회사 높은 열 방출 능력을 구비한 전력용 모듈 패키지 및 그제조방법
US6870243B2 (en) * 2002-11-27 2005-03-22 Freescale Semiconductor, Inc. Thin GaAs die with copper back-metal structure
JP4146785B2 (ja) 2003-11-19 2008-09-10 三菱電機株式会社 電力用半導体装置
JP5390064B2 (ja) 2006-08-30 2014-01-15 ルネサスエレクトロニクス株式会社 半導体装置
KR101524545B1 (ko) 2008-02-28 2015-06-01 페어차일드코리아반도체 주식회사 전력 소자 패키지 및 그 제조 방법
TW200941684A (en) * 2008-03-06 2009-10-01 Mitsubishi Electric Corp Leadframe board, semiconductor module, and method for making a leadframe board
EP2680305A3 (en) * 2012-06-29 2014-02-26 Samsung Electro-Mechanics Co., Ltd Semiconductor package

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09283681A (ja) * 1996-04-16 1997-10-31 Hitachi Ltd 半導体装置
CN1208960A (zh) * 1997-08-16 1999-02-24 Abb研究有限公司 具有以亚模块方式集成的冷却器的功率半导体模块
US20030075783A1 (en) * 2001-10-19 2003-04-24 Mitsubishi Denki Kabushiki Kaisha Semiconductor device
JP2005005638A (ja) * 2003-04-15 2005-01-06 Fuji Electric Fa Components & Systems Co Ltd 半導体モジュールおよびその製造方法
JP2006080300A (ja) * 2004-09-09 2006-03-23 Kokusan Denki Co Ltd リードフレーム及びその製造方法

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107078127A (zh) * 2014-11-07 2017-08-18 三菱电机株式会社 电力用半导体装置及其制造方法
CN107078127B (zh) * 2014-11-07 2019-12-20 三菱电机株式会社 电力用半导体装置及其制造方法
CN111771277A (zh) * 2018-03-26 2020-10-13 德克萨斯仪器股份有限公司 具有倒置的引线引脚的电子器件
CN111771277B (zh) * 2018-03-26 2026-02-06 德克萨斯仪器股份有限公司 具有倒置的引线引脚的电子器件
CN109449150A (zh) * 2018-12-11 2019-03-08 杰群电子科技（东莞）有限公司 带引脚封装、无引脚封装的功率模块及其对应加工方法

Also Published As

Publication number Publication date
US20150318189A1 (en) 2015-11-05
KR101513961B1 (ko) 2015-04-21
JP2014099547A (ja) 2014-05-29
US9252028B2 (en) 2016-02-02
US20140131846A1 (en) 2014-05-15
KR20140066090A (ko) 2014-05-30
US9171774B2 (en) 2015-10-27

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Application publication date: 20140528