JP2014086522A - 電子デバイスの製造方法、電子部品用容器の接合装置、電子機器、及び移動体機器 - Google Patents

電子デバイスの製造方法、電子部品用容器の接合装置、電子機器、及び移動体機器 Download PDF

Info

Publication number
JP2014086522A
JP2014086522A JP2012233498A JP2012233498A JP2014086522A JP 2014086522 A JP2014086522 A JP 2014086522A JP 2012233498 A JP2012233498 A JP 2012233498A JP 2012233498 A JP2012233498 A JP 2012233498A JP 2014086522 A JP2014086522 A JP 2014086522A
Authority
JP
Japan
Prior art keywords
lid
joining
base substrate
electronic device
bonding
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2012233498A
Other languages
English (en)
Japanese (ja)
Other versions
JP2014086522A5 (enExample
Inventor
Hideo Miyasaka
英男 宮坂
Kazuhisa Hashimoto
和久 橋本
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Original Assignee
Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Priority to JP2012233498A priority Critical patent/JP2014086522A/ja
Priority to US14/049,283 priority patent/US20140111919A1/en
Priority to CN201310498916.XA priority patent/CN103769747A/zh
Publication of JP2014086522A publication Critical patent/JP2014086522A/ja
Publication of JP2014086522A5 publication Critical patent/JP2014086522A5/ja
Withdrawn legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/02—Forming enclosures or casings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07 e.g. sealing of a cap to a base of a container
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/02—Containers; Seals
    • H01L23/10—Containers; Seals characterised by the material or arrangement of seals between parts, e.g. between cap and base of the container or between leads and walls of the container
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/05—Holders or supports
    • H03H9/10—Mounting in enclosures
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/05—Holders or supports
    • H03H9/10—Mounting in enclosures
    • H03H9/1007—Mounting in enclosures for bulk acoustic wave [BAW] devices
    • H03H9/1014—Mounting in enclosures for bulk acoustic wave [BAW] devices the enclosure being defined by a frame built on a substrate and a cap, the frame having no mechanical contact with the BAW device
    • H03H9/1021—Mounting in enclosures for bulk acoustic wave [BAW] devices the enclosure being defined by a frame built on a substrate and a cap, the frame having no mechanical contact with the BAW device the BAW device being of the cantilever type
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K13/00—Apparatus or processes specially adapted for manufacturing or adjusting assemblages of electric components
    • H05K13/04—Mounting of components, e.g. of leadless components
    • H05K13/046—Surface mounting
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K5/00—Casings, cabinets or drawers for electric apparatus
    • H05K5/02—Details
    • H05K5/03—Covers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/03—Assembling devices that include piezoelectric or electrostrictive parts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/07—Structure, shape, material or disposition of the bonding areas after the connecting process
    • H01L2224/08—Structure, shape, material or disposition of the bonding areas after the connecting process of an individual bonding area
    • H01L2224/081—Disposition
    • H01L2224/0812—Disposition the bonding area connecting directly to another bonding area, i.e. connectorless bonding, e.g. bumpless bonding
    • H01L2224/08151—Disposition the bonding area connecting directly to another bonding area, i.e. connectorless bonding, e.g. bumpless bonding the bonding area connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/08221—Disposition the bonding area connecting directly to another bonding area, i.e. connectorless bonding, e.g. bumpless bonding the bonding area connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/08225—Disposition the bonding area connecting directly to another bonding area, i.e. connectorless bonding, e.g. bumpless bonding the bonding area connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/32227—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation the layer connector connecting to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/80001—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected by connecting a bonding area directly to another bonding area, i.e. connectorless bonding, e.g. bumpless bonding
    • H01L2224/802—Applying energy for connecting
    • H01L2224/80201—Compression bonding
    • H01L2224/80205—Ultrasonic bonding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/832—Applying energy for connecting
    • H01L2224/83201—Compression bonding
    • H01L2224/83205—Ultrasonic bonding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02—Bonding areas ; Manufacturing methods related thereto
    • H01L24/07—Structure, shape, material or disposition of the bonding areas after the connecting process
    • H01L24/08—Structure, shape, material or disposition of the bonding areas after the connecting process of an individual bonding area
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1203—Rectifying Diode
    • H01L2924/12034—Varactor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12042—LASER
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/161—Cap
    • H01L2924/1615—Shape
    • H01L2924/16195—Flat cap [not enclosing an internal cavity]

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Acoustics & Sound (AREA)
  • Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
JP2012233498A 2012-10-23 2012-10-23 電子デバイスの製造方法、電子部品用容器の接合装置、電子機器、及び移動体機器 Withdrawn JP2014086522A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2012233498A JP2014086522A (ja) 2012-10-23 2012-10-23 電子デバイスの製造方法、電子部品用容器の接合装置、電子機器、及び移動体機器
US14/049,283 US20140111919A1 (en) 2012-10-23 2013-10-09 Method for manufacturing electronic device, bonding device for electronic component container, electronic apparatus, and apparatus for moving object
CN201310498916.XA CN103769747A (zh) 2012-10-23 2013-10-22 电子器件的制造方法、接合装置、电子设备及移动体设备

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2012233498A JP2014086522A (ja) 2012-10-23 2012-10-23 電子デバイスの製造方法、電子部品用容器の接合装置、電子機器、及び移動体機器

Publications (2)

Publication Number Publication Date
JP2014086522A true JP2014086522A (ja) 2014-05-12
JP2014086522A5 JP2014086522A5 (enExample) 2014-06-19

Family

ID=50485117

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2012233498A Withdrawn JP2014086522A (ja) 2012-10-23 2012-10-23 電子デバイスの製造方法、電子部品用容器の接合装置、電子機器、及び移動体機器

Country Status (3)

Country Link
US (1) US20140111919A1 (enExample)
JP (1) JP2014086522A (enExample)
CN (1) CN103769747A (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20190037459A (ko) * 2017-09-29 2019-04-08 삼성전자주식회사 반도체 칩 접합용 지그, 이러한 지그를 포함하는 반도체 칩의 접합 장치 및 이 장치를 이용한 반도체 칩의 접합 방법
CN110227885A (zh) * 2018-03-06 2019-09-13 南京工业职业技术学院 手机充电接头焊接设备

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6155551B2 (ja) * 2012-04-10 2017-07-05 セイコーエプソン株式会社 電子デバイス、電子機器および電子デバイスの製造方法
JP6167494B2 (ja) * 2012-09-26 2017-07-26 セイコーエプソン株式会社 電子デバイス用容器の製造方法、電子デバイスの製造方法、電子デバイス、電子機器及び移動体機器
JP2015128276A (ja) * 2013-11-29 2015-07-09 日本電波工業株式会社 表面実装水晶振動子及びその製造方法
JP6378971B2 (ja) * 2014-08-19 2018-08-22 矢崎総業株式会社 外装部材取付方法及び外装部材取付装置
CN105491869B (zh) * 2016-01-16 2022-05-24 深圳市坤亚电子有限公司 一种全自动多通道散装贴片供料装置
JP6465097B2 (ja) * 2016-11-21 2019-02-06 横河電機株式会社 振動式トランスデューサ
FR3065577B1 (fr) 2017-04-25 2021-09-17 Commissariat Energie Atomique Cellule de scellement et procede d'encapsulation d'un composant microelectronique avec une telle cellule de scellement
CN109382559B (zh) * 2017-08-09 2021-02-23 宁波江丰电子材料股份有限公司 背板制造方法及背板
CN108909085A (zh) * 2018-07-13 2018-11-30 安徽晶赛科技股份有限公司 一种适用于激光焊接石英晶体封装的上盖及其制备方法
US11553265B2 (en) * 2019-07-24 2023-01-10 Google Llc Compact home assistant having a controlled sound path
CN115302207B (zh) * 2022-08-31 2024-05-14 陕西智拓固相增材制造技术有限公司 复合基座的制作方法和复合基座

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09130188A (ja) * 1995-11-02 1997-05-16 Fujimaru Kogyo Kk 薄型電子部品
JP2004172206A (ja) * 2002-11-18 2004-06-17 Teitsu Engineering Co Ltd 電子部品パッケージへのリッド溶接方法
JP2005353885A (ja) * 2004-06-11 2005-12-22 Seiko Epson Corp 電子デバイスの製造方法
JP2006086585A (ja) * 2004-09-14 2006-03-30 Daishinku Corp 表面実装型圧電振動デバイス
JP2007095812A (ja) * 2005-09-27 2007-04-12 Pioneer Electronic Corp 電子部品用筐体、レーザ溶接装置、レーザ溶接方法
JP2007227821A (ja) * 2006-02-27 2007-09-06 Denso Corp 半導体装置の異物除去装置及び異物除去方法
JP2008016667A (ja) * 2006-07-06 2008-01-24 Fujifilm Corp パッケージ開封方法及びパッケージ開封装置、研磨方法及び研磨装置、チップ取り出し方法及びチップ取り出し装置、検査方法及び検査装置
JP2010034099A (ja) * 2008-07-25 2010-02-12 Nippon Avionics Co Ltd 気密封止方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2554182B2 (ja) * 1990-01-22 1996-11-13 松下電器産業株式会社 Ｉｃ部品のリード接合方法
JPH09246904A (ja) * 1996-03-14 1997-09-19 Citizen Watch Co Ltd 表面実装型水晶振動子
JP2001274649A (ja) * 2000-03-24 2001-10-05 Daishinku Corp 水晶振動デバイスの気密封止方法
JP2009182924A (ja) * 2008-02-01 2009-08-13 Epson Toyocom Corp 圧電デバイス及び圧電デバイスの製造方法
CN102318060A (zh) * 2009-02-19 2012-01-11 日本电气株式会社 真空密封封装、具有真空密封封装的印刷电路基板、电子仪器以及真空密封封装的制造方法
CN102334282A (zh) * 2009-02-25 2012-01-25 精工电子有限公司 压电振动器的制造方法、振荡器、电子设备及电波钟
JP2011029911A (ja) * 2009-07-24 2011-02-10 Seiko Instruments Inc 圧電振動子の製造方法、並びに圧電振動子、発振器、電子機器および電波時計
CN102725142B (zh) * 2010-01-21 2015-07-01 电气化学工业株式会社 透光性硬质基板层叠体的制造方法及透光性硬质基板贴合装置
JP2011221007A (ja) * 2010-03-25 2011-11-04 Seiko Epson Corp 圧力検出装置
CN101908702B (zh) * 2010-06-24 2012-06-13 番禺得意精密电子工业有限公司 电连接组件的组装方法
JP2012054331A (ja) * 2010-08-31 2012-03-15 Fujifilm Corp 固体撮像装置の製造方法

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09130188A (ja) * 1995-11-02 1997-05-16 Fujimaru Kogyo Kk 薄型電子部品
JP2004172206A (ja) * 2002-11-18 2004-06-17 Teitsu Engineering Co Ltd 電子部品パッケージへのリッド溶接方法
JP2005353885A (ja) * 2004-06-11 2005-12-22 Seiko Epson Corp 電子デバイスの製造方法
JP2006086585A (ja) * 2004-09-14 2006-03-30 Daishinku Corp 表面実装型圧電振動デバイス
JP2007095812A (ja) * 2005-09-27 2007-04-12 Pioneer Electronic Corp 電子部品用筐体、レーザ溶接装置、レーザ溶接方法
JP2007227821A (ja) * 2006-02-27 2007-09-06 Denso Corp 半導体装置の異物除去装置及び異物除去方法
JP2008016667A (ja) * 2006-07-06 2008-01-24 Fujifilm Corp パッケージ開封方法及びパッケージ開封装置、研磨方法及び研磨装置、チップ取り出し方法及びチップ取り出し装置、検査方法及び検査装置
JP2010034099A (ja) * 2008-07-25 2010-02-12 Nippon Avionics Co Ltd 気密封止方法

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20190037459A (ko) * 2017-09-29 2019-04-08 삼성전자주식회사 반도체 칩 접합용 지그, 이러한 지그를 포함하는 반도체 칩의 접합 장치 및 이 장치를 이용한 반도체 칩의 접합 방법
KR102410948B1 (ko) * 2017-09-29 2022-06-20 삼성전자주식회사 반도체 칩 접합용 지그, 이러한 지그를 포함하는 반도체 칩의 접합 장치 및 이 장치를 이용한 반도체 칩의 접합 방법
CN110227885A (zh) * 2018-03-06 2019-09-13 南京工业职业技术学院 手机充电接头焊接设备
CN110227885B (zh) * 2018-03-06 2024-03-01 南京工业职业技术学院 手机充电接头焊接设备

Also Published As

Publication number Publication date
CN103769747A (zh) 2014-05-07
US20140111919A1 (en) 2014-04-24

Similar Documents

Publication Publication Date Title
JP2014086522A (ja) 電子デバイスの製造方法、電子部品用容器の接合装置、電子機器、及び移動体機器
CN103681519B (zh) 电子器件的制造方法、电子设备以及移动体设备
JP2014086522A5 (enExample)
CN101272135B (zh) 晶体器件及其密封方法
US9325292B2 (en) Piezoelectric device with a package including a convex part
JP5282392B2 (ja) 直接接合用ウェハ
JP4978030B2 (ja) 圧電デバイス
CN103579014A (zh) 电子器件的制造方法、电子器件、电子设备以及移动体
JP2006086585A (ja) 表面実装型圧電振動デバイス
JP5573991B2 (ja) 接合用ウェハ
JP3922570B2 (ja) 圧電デバイスと圧電デバイス用パッケージ、圧電デバイスの製造方法、ならびに圧電デバイスを利用した携帯電話装置ならびに圧電デバイスを利用した電子機器
JP2009071655A (ja) 圧電デバイス及び圧電デバイスの製造方法
JP2013110492A (ja) 電子デバイス用パッケージ、電子デバイス、電子機器及び電子デバイスの製造方法
JP2014060313A (ja) 電子デバイス用容器の製造方法、電子デバイスの製造方法、電子機器及び移動体機器
JP2015220624A (ja) 圧電デバイスの製造方法、パッケージの溶接装置
JP2009239475A (ja) 表面実装型圧電発振器
JP3731391B2 (ja) 電子部品の封止方法
JP5240912B2 (ja) 圧電デバイスの製造方法及び圧電振動素子搭載装置
JP2017212612A (ja) 圧電デバイス及びその製造方法
JP2007073713A (ja) 圧電デバイス用パッケージ
JP2011151857A (ja) 圧電振動子、電子デバイス及び電子機器
JP6577205B2 (ja) 圧電デバイスおよびその製造方法
JP2014011664A (ja) 水晶デバイス
JP3800127B2 (ja) 圧電デバイスと圧電デバイス用パッケージ、圧電デバイスの製造方法、ならびに圧電デバイスを利用した携帯電話装置ならびに圧電デバイスを利用した電子機器
JP2007318209A (ja) 表面実装型圧電振動デバイス、およびその製造方法

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20140314

RD04 Notification of resignation of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7424

Effective date: 20150108

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20150914

RD04 Notification of resignation of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7424

Effective date: 20160610

RD03 Notification of appointment of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7423

Effective date: 20160624

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20160712

A761 Written withdrawal of application

Free format text: JAPANESE INTERMEDIATE CODE: A761

Effective date: 20160817