JP2014086447A - 電子装置及びその製造方法 - Google Patents

電子装置及びその製造方法 Download PDF

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Publication number
JP2014086447A
JP2014086447A JP2012231846A JP2012231846A JP2014086447A JP 2014086447 A JP2014086447 A JP 2014086447A JP 2012231846 A JP2012231846 A JP 2012231846A JP 2012231846 A JP2012231846 A JP 2012231846A JP 2014086447 A JP2014086447 A JP 2014086447A
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JP
Japan
Prior art keywords
layer
cavity
electronic device
region
insulating layer
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Ceased
Application number
JP2012231846A
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English (en)
Japanese (ja)
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JP2014086447A5 (enExample
Inventor
Takahiko Yoshizawa
隆彦 吉澤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Original Assignee
Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Priority to JP2012231846A priority Critical patent/JP2014086447A/ja
Priority to US14/046,423 priority patent/US8952467B2/en
Priority to CN201310493344.6A priority patent/CN103771332A/zh
Publication of JP2014086447A publication Critical patent/JP2014086447A/ja
Publication of JP2014086447A5 publication Critical patent/JP2014086447A5/ja
Ceased legal-status Critical Current

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
    • B81B7/0032—Packages or encapsulation
    • B81B7/0058—Packages or encapsulation for protecting against damages due to external chemical or mechanical influences, e.g. shocks or vibrations
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
    • B81C1/00261—Processes for packaging MEMS devices
    • B81C1/00333—Aspects relating to packaging of MEMS devices, not covered by groups B81C1/00269 - B81C1/00325
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
    • B81B7/02—Microstructural systems; Auxiliary parts of microstructural devices or systems containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems [MEMS]
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
    • B81C1/00261—Processes for packaging MEMS devices
    • B81C1/00325—Processes for packaging MEMS devices for reducing stress inside of the package structure
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2201/00—Manufacture or treatment of microstructural devices or systems
    • B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
    • B81C2201/0101—Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning
    • B81C2201/0128—Processes for removing material
    • B81C2201/013—Etching
    • B81C2201/0135—Controlling etch progression
    • B81C2201/014—Controlling etch progression by depositing an etch stop layer, e.g. silicon nitride, silicon oxide, metal
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Health & Medical Sciences (AREA)
  • General Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Gyroscopes (AREA)
  • Micromachines (AREA)
  • Pressure Sensors (AREA)
JP2012231846A 2012-10-19 2012-10-19 電子装置及びその製造方法 Ceased JP2014086447A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2012231846A JP2014086447A (ja) 2012-10-19 2012-10-19 電子装置及びその製造方法
US14/046,423 US8952467B2 (en) 2012-10-19 2013-10-04 Electronic device and its manufacturing method
CN201310493344.6A CN103771332A (zh) 2012-10-19 2013-10-18 电子装置及其制造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2012231846A JP2014086447A (ja) 2012-10-19 2012-10-19 電子装置及びその製造方法

Publications (2)

Publication Number Publication Date
JP2014086447A true JP2014086447A (ja) 2014-05-12
JP2014086447A5 JP2014086447A5 (enExample) 2015-11-12

Family

ID=50484595

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2012231846A Ceased JP2014086447A (ja) 2012-10-19 2012-10-19 電子装置及びその製造方法

Country Status (3)

Country Link
US (1) US8952467B2 (enExample)
JP (1) JP2014086447A (enExample)
CN (1) CN103771332A (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016099114A (ja) * 2014-11-18 2016-05-30 セイコーエプソン株式会社 電子デバイス、物理量センサー、圧力センサー、高度計、電子機器および移動体
US9997370B2 (en) 2015-07-29 2018-06-12 Seiko Epson Corporation Electronic apparatus, manufacturing method thereof, oscillator, electronic appliance, and mobile unit
JP2022179146A (ja) * 2021-05-21 2022-12-02 株式会社デンソー 慣性センサおよびその製造方法

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10081535B2 (en) * 2013-06-25 2018-09-25 Analog Devices, Inc. Apparatus and method for shielding and biasing in MEMS devices encapsulated by active circuitry
US9382111B2 (en) * 2014-06-26 2016-07-05 Infineon Technologies Dresden Gmbh Micromechanical system and method for manufacturing a micromechanical system
US9376314B2 (en) * 2014-06-26 2016-06-28 Infineon Technologies Dresden Gmbh Method for manufacturing a micromechanical system
US10155660B2 (en) * 2015-01-28 2018-12-18 Taiwan Semiconductor Manufacturing Co., Ltd. Device and method for protecting FEOL element and BEOL element
CN105621341A (zh) * 2015-12-29 2016-06-01 苏州工业园区纳米产业技术研究院有限公司 一种mems锚区结构及其制备方法
US11346875B2 (en) * 2018-02-27 2022-05-31 Applied Materials, Inc. Micro resonator array sensor for detecting wafer processing parameters
US11262262B2 (en) * 2019-01-28 2022-03-01 Taiwan Semiconductor Manufacturing Company Ltd. Pressure sensor and manufacturing method thereof

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007222956A (ja) * 2006-02-21 2007-09-06 Seiko Epson Corp Ｍｅｍｓデバイスおよびｍｅｍｓデバイスの製造方法
JP2007222957A (ja) * 2006-02-21 2007-09-06 Seiko Epson Corp Ｍｅｍｓデバイスの製造方法
JP2008221435A (ja) * 2007-03-15 2008-09-25 Seiko Epson Corp 電子装置及びその製造方法
JP2011182210A (ja) * 2010-03-02 2011-09-15 Seiko Epson Corp 電子装置
JP2012096316A (ja) * 2010-11-02 2012-05-24 Seiko Epson Corp 電子装置および電子装置の製造方法
JP2012119821A (ja) * 2010-11-30 2012-06-21 Seiko Epson Corp 電子装置、電子機器及び電子装置の製造方法
JP2013031907A (ja) * 2011-08-03 2013-02-14 Seiko Epson Corp 電子装置およびその製造方法、並びに発振器
JP2013123779A (ja) * 2011-12-15 2013-06-24 Seiko Epson Corp 電子装置および発振器

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3778128B2 (ja) 2002-05-14 2006-05-24 株式会社デンソー メンブレンを有する半導体装置の製造方法
JP4544880B2 (ja) 2003-09-25 2010-09-15 京セラ株式会社 微小電気機械式装置の封止方法
GB0330010D0 (en) * 2003-12-24 2004-01-28 Cavendish Kinetics Ltd Method for containing a device and a corresponding device
KR100575363B1 (ko) 2004-04-13 2006-05-03 재단법인서울대학교산학협력재단 미소기계소자의 진공 실장방법 및 이 방법에 의해 진공실장된 미소기계소자
JP4480728B2 (ja) 2006-06-09 2010-06-16 パナソニック株式会社 Ｍｅｍｓマイクの製造方法
CN101086956B (zh) 2006-06-09 2011-04-13 松下电器产业株式会社 半导体装置的制造方法
JP2008114354A (ja) * 2006-11-08 2008-05-22 Seiko Epson Corp 電子装置及びその製造方法
US7994594B2 (en) 2007-03-15 2011-08-09 Seiko Epson Corporation Electronic device, resonator, oscillator and method for manufacturing electronic device
DE102007031128A1 (de) * 2007-06-29 2009-01-02 IHP GmbH - Innovations for High Performance Microelectronics/Institut für innovative Mikroelektronik MEMS-Mikroviskosimeter und Verfahren zu seiner Herstellung
JP5412031B2 (ja) 2007-07-24 2014-02-12 ローム株式会社 Ｍｅｍｓセンサ
JP4726927B2 (ja) 2008-06-19 2011-07-20 株式会社日立製作所 集積化マイクロエレクトロメカニカルシステムおよびその製造方法
JP5121765B2 (ja) 2009-03-25 2013-01-16 株式会社東芝 Ｍｅｍｓデバイスおよびその製造方法
JP2011143486A (ja) 2010-01-13 2011-07-28 Seiko Epson Corp 電子装置
CN102223591B (zh) * 2010-04-19 2015-04-01 联华电子股份有限公司 微机电系统麦克风的晶片级封装结构及其制造方法
CN102303844B (zh) * 2011-08-15 2014-07-09 上海先进半导体制造股份有限公司 Mems器件及其形成方法

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007222956A (ja) * 2006-02-21 2007-09-06 Seiko Epson Corp Ｍｅｍｓデバイスおよびｍｅｍｓデバイスの製造方法
JP2007222957A (ja) * 2006-02-21 2007-09-06 Seiko Epson Corp Ｍｅｍｓデバイスの製造方法
JP2008221435A (ja) * 2007-03-15 2008-09-25 Seiko Epson Corp 電子装置及びその製造方法
JP2011182210A (ja) * 2010-03-02 2011-09-15 Seiko Epson Corp 電子装置
JP2012096316A (ja) * 2010-11-02 2012-05-24 Seiko Epson Corp 電子装置および電子装置の製造方法
JP2012119821A (ja) * 2010-11-30 2012-06-21 Seiko Epson Corp 電子装置、電子機器及び電子装置の製造方法
JP2013031907A (ja) * 2011-08-03 2013-02-14 Seiko Epson Corp 電子装置およびその製造方法、並びに発振器
JP2013123779A (ja) * 2011-12-15 2013-06-24 Seiko Epson Corp 電子装置および発振器

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016099114A (ja) * 2014-11-18 2016-05-30 セイコーエプソン株式会社 電子デバイス、物理量センサー、圧力センサー、高度計、電子機器および移動体
US9682858B2 (en) 2014-11-18 2017-06-20 Seiko Epson Corporation Electronic device, physical quantity sensor, pressure sensor, altimeter, electronic apparatus, and moving object
US9997370B2 (en) 2015-07-29 2018-06-12 Seiko Epson Corporation Electronic apparatus, manufacturing method thereof, oscillator, electronic appliance, and mobile unit
JP2022179146A (ja) * 2021-05-21 2022-12-02 株式会社デンソー 慣性センサおよびその製造方法
JP7452492B2 (ja) 2021-05-21 2024-03-19 株式会社デンソー 慣性センサおよびその製造方法

Also Published As

Publication number Publication date
CN103771332A (zh) 2014-05-07
US8952467B2 (en) 2015-02-10
US20140110799A1 (en) 2014-04-24

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