JP2014049595A5 - - Google Patents

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Publication number
JP2014049595A5
JP2014049595A5 JP2012191088A JP2012191088A JP2014049595A5 JP 2014049595 A5 JP2014049595 A5 JP 2014049595A5 JP 2012191088 A JP2012191088 A JP 2012191088A JP 2012191088 A JP2012191088 A JP 2012191088A JP 2014049595 A5 JP2014049595 A5 JP 2014049595A5
Authority
JP
Japan
Prior art keywords
semiconductor device
nitride semiconductor
supply layer
electron supply
type impurity
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2012191088A
Other languages
English (en)
Japanese (ja)
Other versions
JP2014049595A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2012191088A priority Critical patent/JP2014049595A/ja
Priority claimed from JP2012191088A external-priority patent/JP2014049595A/ja
Priority to TW102126292A priority patent/TW201411874A/zh
Priority to US14/423,262 priority patent/US20150228857A1/en
Priority to CN201380041331.3A priority patent/CN104521011A/zh
Priority to PCT/JP2013/073106 priority patent/WO2014034762A1/ja
Publication of JP2014049595A publication Critical patent/JP2014049595A/ja
Publication of JP2014049595A5 publication Critical patent/JP2014049595A5/ja
Pending legal-status Critical Current

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JP2012191088A 2012-08-31 2012-08-31 窒化物半導体素子 Pending JP2014049595A (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2012191088A JP2014049595A (ja) 2012-08-31 2012-08-31 窒化物半導体素子
TW102126292A TW201411874A (zh) 2012-08-31 2013-07-23 氮化物半導體元件
US14/423,262 US20150228857A1 (en) 2012-08-31 2013-08-29 Nitride semiconductor device
CN201380041331.3A CN104521011A (zh) 2012-08-31 2013-08-29 氮化物半导体元件
PCT/JP2013/073106 WO2014034762A1 (ja) 2012-08-31 2013-08-29 窒化物半導体素子

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2012191088A JP2014049595A (ja) 2012-08-31 2012-08-31 窒化物半導体素子

Publications (2)

Publication Number Publication Date
JP2014049595A JP2014049595A (ja) 2014-03-17
JP2014049595A5 true JP2014049595A5 (enExample) 2015-02-19

Family

ID=50183567

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2012191088A Pending JP2014049595A (ja) 2012-08-31 2012-08-31 窒化物半導体素子

Country Status (5)

Country Link
US (1) US20150228857A1 (enExample)
JP (1) JP2014049595A (enExample)
CN (1) CN104521011A (enExample)
TW (1) TW201411874A (enExample)
WO (1) WO2014034762A1 (enExample)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102175320B1 (ko) * 2014-04-07 2020-11-06 엘지이노텍 주식회사 발광소자 및 이를 구비하는 조명 시스템

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4356555B2 (ja) * 1998-03-12 2009-11-04 日亜化学工業株式会社 窒化物半導体素子
JP2006245555A (ja) * 2005-02-07 2006-09-14 Showa Denko Kk 透光性電極
KR100631981B1 (ko) * 2005-04-07 2006-10-11 삼성전기주식회사 수직구조 ３족 질화물 발광 소자 및 그 제조 방법
JP2010087217A (ja) * 2008-09-30 2010-04-15 Toyoda Gosei Co Ltd Ｉｉｉ族窒化物半導体発光素子およびその製造方法
JP5330040B2 (ja) * 2009-03-17 2013-10-30 株式会社東芝 半導体素子、半導体装置、半導体ウェーハ及び半導体結晶の成長方法
JP2011018869A (ja) * 2009-06-09 2011-01-27 Nichia Corp 窒化物半導体素子
JP5644996B2 (ja) * 2009-09-30 2014-12-24 国立大学法人三重大学 窒化物光半導体素子

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