TW201411874A - 氮化物半導體元件 - Google Patents

氮化物半導體元件 Download PDF

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Publication number
TW201411874A
TW201411874A TW102126292A TW102126292A TW201411874A TW 201411874 A TW201411874 A TW 201411874A TW 102126292 A TW102126292 A TW 102126292A TW 102126292 A TW102126292 A TW 102126292A TW 201411874 A TW201411874 A TW 201411874A
Authority
TW
Taiwan
Prior art keywords
layer
nitride semiconductor
flow rate
electron supply
supply layer
Prior art date
Application number
TW102126292A
Other languages
English (en)
Chinese (zh)
Inventor
月原政志
三好晃平
川□宏治
Original Assignee
牛尾電機股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 牛尾電機股份有限公司 filed Critical 牛尾電機股份有限公司
Publication of TW201411874A publication Critical patent/TW201411874A/zh

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • H10H20/8252—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN characterised by the dopants
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/0242—Crystalline insulating materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02455—Group 13/15 materials
    • H01L21/02458—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/0254—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/816—Bodies having carrier transport control structures, e.g. highly-doped semiconductor layers or current-blocking structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/8215—Bodies characterised by crystalline imperfections, e.g. dislocations; characterised by the distribution of dopants, e.g. delta-doping
    • H10P14/24—
    • H10P14/2921—
    • H10P14/3216—
    • H10P14/3416—

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Led Devices (AREA)
TW102126292A 2012-08-31 2013-07-23 氮化物半導體元件 TW201411874A (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2012191088A JP2014049595A (ja) 2012-08-31 2012-08-31 窒化物半導体素子

Publications (1)

Publication Number Publication Date
TW201411874A true TW201411874A (zh) 2014-03-16

Family

ID=50183567

Family Applications (1)

Application Number Title Priority Date Filing Date
TW102126292A TW201411874A (zh) 2012-08-31 2013-07-23 氮化物半導體元件

Country Status (5)

Country Link
US (1) US20150228857A1 (enExample)
JP (1) JP2014049595A (enExample)
CN (1) CN104521011A (enExample)
TW (1) TW201411874A (enExample)
WO (1) WO2014034762A1 (enExample)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102175320B1 (ko) * 2014-04-07 2020-11-06 엘지이노텍 주식회사 발광소자 및 이를 구비하는 조명 시스템

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4356555B2 (ja) * 1998-03-12 2009-11-04 日亜化学工業株式会社 窒化物半導体素子
JP2006245555A (ja) * 2005-02-07 2006-09-14 Showa Denko Kk 透光性電極
KR100631981B1 (ko) * 2005-04-07 2006-10-11 삼성전기주식회사 수직구조 ３족 질화물 발광 소자 및 그 제조 방법
JP2010087217A (ja) * 2008-09-30 2010-04-15 Toyoda Gosei Co Ltd Ｉｉｉ族窒化物半導体発光素子およびその製造方法
JP5330040B2 (ja) * 2009-03-17 2013-10-30 株式会社東芝 半導体素子、半導体装置、半導体ウェーハ及び半導体結晶の成長方法
JP2011018869A (ja) * 2009-06-09 2011-01-27 Nichia Corp 窒化物半導体素子
JP5644996B2 (ja) * 2009-09-30 2014-12-24 国立大学法人三重大学 窒化物光半導体素子

Also Published As

Publication number Publication date
WO2014034762A1 (ja) 2014-03-06
US20150228857A1 (en) 2015-08-13
CN104521011A (zh) 2015-04-15
JP2014049595A (ja) 2014-03-17

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