JP2014042954A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2014042954A5 JP2014042954A5 JP2012186181A JP2012186181A JP2014042954A5 JP 2014042954 A5 JP2014042954 A5 JP 2014042954A5 JP 2012186181 A JP2012186181 A JP 2012186181A JP 2012186181 A JP2012186181 A JP 2012186181A JP 2014042954 A5 JP2014042954 A5 JP 2014042954A5
- Authority
- JP
- Japan
- Prior art keywords
- conductive layer
- oxide film
- film
- layer
- mems
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000010410 layer Substances 0.000 description 33
- 239000004065 semiconductor Substances 0.000 description 8
- 238000005530 etching Methods 0.000 description 5
- 150000004767 nitrides Chemical class 0.000 description 5
- 230000001681 protective effect Effects 0.000 description 5
- 238000000034 method Methods 0.000 description 4
- 238000000206 photolithography Methods 0.000 description 4
- 239000011229 interlayer Substances 0.000 description 3
- 238000000059 patterning Methods 0.000 description 3
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2012186181A JP2014042954A (ja) | 2012-08-27 | 2012-08-27 | Ｍｅｍｓ素子、電子機器、およびｍｅｍｓ素子の製造方法 |
| US13/966,384 US20140054729A1 (en) | 2012-08-27 | 2013-08-14 | Mems device, electronic apparatus, and manufacturing method of mems device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2012186181A JP2014042954A (ja) | 2012-08-27 | 2012-08-27 | Ｍｅｍｓ素子、電子機器、およびｍｅｍｓ素子の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2014042954A JP2014042954A (ja) | 2014-03-13 |
| JP2014042954A5 true JP2014042954A5 (https=) | 2014-05-01 |
Family
ID=50147269
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2012186181A Withdrawn JP2014042954A (ja) | 2012-08-27 | 2012-08-27 | Ｍｅｍｓ素子、電子機器、およびｍｅｍｓ素子の製造方法 |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US20140054729A1 (https=) |
| JP (1) | JP2014042954A (https=) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2015174150A (ja) * | 2014-03-13 | 2015-10-05 | 株式会社東芝 | Ｍｅｍｓデバイスおよびその製造方法 |
| TWI610406B (zh) * | 2015-02-09 | 2018-01-01 | 精材科技股份有限公司 | 晶片封裝體與其製備方法 |
| US10618801B2 (en) * | 2016-11-10 | 2020-04-14 | Taiwan Semiconductor Manufacturing Co., Ltd. | MEMS structure with bilayer stopper and method for forming the same |
| CN111924797B (zh) * | 2020-09-29 | 2021-01-08 | 深圳市海谱纳米光学科技有限公司 | 一种具有可动镜面的法珀腔器件及其制作工艺 |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4489651B2 (ja) * | 2005-07-22 | 2010-06-23 | 株式会社日立製作所 | 半導体装置およびその製造方法 |
| JP2010129371A (ja) * | 2008-11-27 | 2010-06-10 | Toshiba Corp | スイッチ及びｅｓｄ保護素子 |
| JP5417851B2 (ja) * | 2009-01-07 | 2014-02-19 | セイコーエプソン株式会社 | Ｍｅｍｓデバイス及びその製造方法 |
| JP2011049303A (ja) * | 2009-08-26 | 2011-03-10 | Toshiba Corp | 電気部品およびその製造方法 |
| JP2011189423A (ja) * | 2010-03-12 | 2011-09-29 | Seiko Epson Corp | Ｍｅｍｓ素子および発振器 |
| JP5516872B2 (ja) * | 2010-04-13 | 2014-06-11 | セイコーエプソン株式会社 | Ｍｅｍｓデバイス、電子機器 |
| US8716051B2 (en) * | 2010-10-21 | 2014-05-06 | Taiwan Semiconductor Manufacturing Company, Ltd. | MEMS device with release aperture |
-
2012
- 2012-08-27 JP JP2012186181A patent/JP2014042954A/ja not_active Withdrawn
-
2013
- 2013-08-14 US US13/966,384 patent/US20140054729A1/en not_active Abandoned
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US10090465B2 (en) | Semiconductor device having memory cell structure and method of manufacturing the same | |
| CN102237364B (zh) | 存储器件的制造方法 | |
| TW201731089A (zh) | 電阻式隨機存取記憶體單元 | |
| TW201843817A (zh) | 半導體記憶裝置 | |
| US9514881B2 (en) | Semiconductor structure and fabrication method thereof | |
| CN107785426B (zh) | 一种半导体器件及其制造方法 | |
| TWI654781B (zh) | 壓電式層裝置的製造方法以及相關的壓電式層裝置 | |
| US20170200723A1 (en) | Semiconductor devices having a gate structure and a conductive line and methods of manufacturing the same | |
| CN101005045A (zh) | 半导体器件及其制造方法 | |
| JP2014042954A5 (https=) | ||
| JP2007158301A5 (https=) | ||
| JP2011071324A5 (https=) | ||
| JP6331552B2 (ja) | Ｍｅｍｓデバイス及びその製造方法 | |
| JP2015182158A (ja) | Ｍｅｍｓデバイス | |
| TWI549301B (zh) | 垂直式電晶體結構與形成垂直式電晶體結構接觸節點的方法 | |
| JP6331551B2 (ja) | Ｍｅｍｓデバイス | |
| US8691610B1 (en) | Semiconductor device and method for manufacturing the same | |
| JP6314568B2 (ja) | Ｍｅｍｓデバイス及びその製造方法 | |
| JP2015171740A (ja) | Ｍｅｍｓデバイス及びその製造方法 | |
| JP4501715B2 (ja) | Ｍｅｍｓ素子およびｍｅｍｓ素子の製造方法 | |
| CN105428533B (zh) | 相变化记忆体的制造方法 | |
| JP2013143521A (ja) | 半導体装置とその製造方法 | |
| JP2014018871A (ja) | プロセスモニター素子、およびｍｅｍｓ素子の製造方法 | |
| CN107799500B (zh) | 半导体装置以及制造该半导体装置的方法 | |
| TW201530776A (zh) | 半導體裝置及其製造方法 |