JP2013541827A5 - - Google Patents

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Publication number
JP2013541827A5
JP2013541827A5 JP2013521826A JP2013521826A JP2013541827A5 JP 2013541827 A5 JP2013541827 A5 JP 2013541827A5 JP 2013521826 A JP2013521826 A JP 2013521826A JP 2013521826 A JP2013521826 A JP 2013521826A JP 2013541827 A5 JP2013541827 A5 JP 2013541827A5
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JP
Japan
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series
coordinates
determining
substrate
value
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JP2013521826A
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English (en)
Japanese (ja)
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JP2013541827A (ja
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Priority claimed from PCT/US2011/044680 external-priority patent/WO2012012530A2/en
Publication of JP2013541827A publication Critical patent/JP2013541827A/ja
Publication of JP2013541827A5 publication Critical patent/JP2013541827A5/ja
Pending legal-status Critical Current

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JP2013521826A 2010-07-23 2011-07-20 終点検出のための２次元のスペクトル特徴の追跡 Pending JP2013541827A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US36712510P 2010-07-23 2010-07-23
US61/367,125 2010-07-23
PCT/US2011/044680 WO2012012530A2 (en) 2010-07-23 2011-07-20 Tracking spectrum features in two dimensions for endpoint detection

Publications (2)

Publication Number Publication Date
JP2013541827A JP2013541827A (ja) 2013-11-14
JP2013541827A5 true JP2013541827A5 (enExample) 2014-09-04

Family

ID=45494016

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2013521826A Pending JP2013541827A (ja) 2010-07-23 2011-07-20 終点検出のための２次元のスペクトル特徴の追跡

Country Status (5)

Country Link
US (1) US8814631B2 (enExample)
JP (1) JP2013541827A (enExample)
KR (1) KR101484696B1 (enExample)
TW (1) TWI478259B (enExample)
WO (1) WO2012012530A2 (enExample)

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US8747189B2 (en) * 2011-04-26 2014-06-10 Applied Materials, Inc. Method of controlling polishing
US8657646B2 (en) * 2011-05-09 2014-02-25 Applied Materials, Inc. Endpoint detection using spectrum feature trajectories
US8563335B1 (en) * 2012-04-23 2013-10-22 Applied Materials, Inc. Method of controlling polishing using in-situ optical monitoring and fourier transform
US9248544B2 (en) 2012-07-18 2016-02-02 Applied Materials, Inc. Endpoint detection during polishing using integrated differential intensity
CN103624673B (zh) * 2012-08-21 2016-04-20 中芯国际集成电路制造(上海)有限公司 化学机械抛光装置及化学机械抛光的方法
US9221147B2 (en) * 2012-10-23 2015-12-29 Applied Materials, Inc. Endpointing with selective spectral monitoring
TWI675721B (zh) * 2013-07-11 2019-11-01 日商荏原製作所股份有限公司 研磨裝置及研磨狀態監視方法
JP6033751B2 (ja) * 2013-10-07 2016-11-30 株式会社荏原製作所 研磨方法
WO2015163164A1 (ja) * 2014-04-22 2015-10-29 株式会社 荏原製作所 研磨方法および研磨装置
US9352440B2 (en) * 2014-04-30 2016-05-31 Applied Materials, Inc. Serial feature tracking for endpoint detection
TWI784719B (zh) 2016-08-26 2022-11-21 美商應用材料股份有限公司 獲得代表在基板上的層的厚度的測量的方法，及量測系統和電腦程式產品
CN109791881B (zh) * 2016-09-21 2021-02-19 应用材料公司 具有补偿滤波的端点检测
JP6989317B2 (ja) 2017-08-04 2022-01-05 キオクシア株式会社 研磨装置、研磨方法、およびプログラム
US12236573B2 (en) * 2020-12-03 2025-02-25 Battelle Memorial Institute Optical end-pointing for integrated circuit delayering; systems and methods using the same
KR20230148849A (ko) 2021-03-04 2023-10-25 어플라이드 머티어리얼스, 인코포레이티드 기판 이미지들의 프로세싱에 기초한 필름 불균일의 픽셀 및 영역 분류
US20240189958A1 (en) * 2022-12-07 2024-06-13 Illinois Tool Works Inc. Systems and methods to detect rotation of a vibratory polisher

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US5910846A (en) * 1996-05-16 1999-06-08 Micron Technology, Inc. Method and apparatus for detecting the endpoint in chemical-mechanical polishing of semiconductor wafers
US6383058B1 (en) * 2000-01-28 2002-05-07 Applied Materials, Inc. Adaptive endpoint detection for chemical mechanical polishing
JP2001287159A (ja) * 2000-04-05 2001-10-16 Nikon Corp 表面状態測定方法及び測定装置及び研磨装置及び半導体デバイス製造方法
US6605405B2 (en) 2000-07-26 2003-08-12 Canon Kabushiki Kaisha Electrophotographic method and electrophotographic apparatus
JP3946470B2 (ja) * 2001-03-12 2007-07-18 株式会社デンソー 半導体層の膜厚測定方法及び半導体基板の製造方法
JP2002359217A (ja) 2001-05-31 2002-12-13 Omron Corp 研磨終点検出方法およびその装置
US6618130B2 (en) * 2001-08-28 2003-09-09 Speedfam-Ipec Corporation Method and apparatus for optical endpoint detection during chemical mechanical polishing
US20050026542A1 (en) * 2003-07-31 2005-02-03 Tezer Battal Detection system for chemical-mechanical planarization tool
WO2007024807A2 (en) * 2005-08-22 2007-03-01 Applied Materials, Inc. Apparatus and methods for spectrum based monitoring of chemical mechanical polishing
US7764377B2 (en) * 2005-08-22 2010-07-27 Applied Materials, Inc. Spectrum based endpointing for chemical mechanical polishing
US7998358B2 (en) * 2006-10-31 2011-08-16 Applied Materials, Inc. Peak-based endpointing for chemical mechanical polishing
JP5274105B2 (ja) * 2008-05-26 2013-08-28 株式会社東京精密 研磨終点検出方法
US8388408B2 (en) * 2008-10-10 2013-03-05 Ebara Corporation Method of making diagram for use in selection of wavelength of light for polishing endpoint detection, method for selecting wavelength of light for polishing endpoint detection, and polishing endpoint detection method
JP4739393B2 (ja) * 2008-11-11 2011-08-03 株式会社荏原製作所 研磨終点検知用の光の波長選択に用いられるダイヤグラムの作成方法、光の波長選択方法、研磨終点検出方法、研磨終点検出装置、および研磨装置
JP2010093147A (ja) * 2008-10-10 2010-04-22 Ebara Corp 研磨進捗監視方法および研磨装置
US8352061B2 (en) * 2008-11-14 2013-01-08 Applied Materials, Inc. Semi-quantitative thickness determination
KR101956838B1 (ko) 2009-11-03 2019-03-11 어플라이드 머티어리얼스, 인코포레이티드 시간에 대한 스펙트럼들 등고선 플롯들의 피크 위치를 이용한 종료점 방법
US8834229B2 (en) 2010-05-05 2014-09-16 Applied Materials, Inc. Dynamically tracking spectrum features for endpoint detection
US8930013B2 (en) 2010-06-28 2015-01-06 Applied Materials, Inc. Adaptively tracking spectrum features for endpoint detection
JP5612945B2 (ja) * 2010-07-23 2014-10-22 株式会社荏原製作所 基板の研磨の進捗を監視する方法および研磨装置
US8535115B2 (en) * 2011-01-28 2013-09-17 Applied Materials, Inc. Gathering spectra from multiple optical heads
US8657646B2 (en) * 2011-05-09 2014-02-25 Applied Materials, Inc. Endpoint detection using spectrum feature trajectories
US9233450B2 (en) * 2011-08-23 2016-01-12 Applied Materials, Inc. Optical detection of metal layer clearance
US9168630B2 (en) * 2012-04-23 2015-10-27 Applied Materials, Inc. User-input functions for data sequences in polishing endpoint detection
US9289875B2 (en) * 2012-04-25 2016-03-22 Applied Materials, Inc. Feed forward and feed-back techniques for in-situ process control

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