JP2016538728A5 - - Google Patents

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Publication number
JP2016538728A5
JP2016538728A5 JP2016533638A JP2016533638A JP2016538728A5 JP 2016538728 A5 JP2016538728 A5 JP 2016538728A5 JP 2016533638 A JP2016533638 A JP 2016533638A JP 2016533638 A JP2016533638 A JP 2016533638A JP 2016538728 A5 JP2016538728 A5 JP 2016538728A5
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JP
Japan
Prior art keywords
polishing rate
target
polishing
rate adjustment
adjustment
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JP2016533638A
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English (en)
Japanese (ja)
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JP6580042B2 (ja
JP2016538728A (ja
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Priority claimed from US14/092,429 external-priority patent/US9490186B2/en
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Publication of JP2016538728A5 publication Critical patent/JP2016538728A5/ja
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JP2016533638A 2013-11-27 2014-11-12 基板研磨中の研磨速度の制限的調整 Active JP6580042B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US14/092,429 US9490186B2 (en) 2013-11-27 2013-11-27 Limiting adjustment of polishing rates during substrate polishing
US14/092,429 2013-11-27
PCT/US2014/065243 WO2015080864A1 (en) 2013-11-27 2014-11-12 Limiting adjustment of polishing rates during substrate polishing

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2019154050A Division JP2020010048A (ja) 2013-11-27 2019-08-26 基板研磨中の研磨速度の制限的調整

Publications (3)

Publication Number Publication Date
JP2016538728A JP2016538728A (ja) 2016-12-08
JP2016538728A5 true JP2016538728A5 (enExample) 2017-12-21
JP6580042B2 JP6580042B2 (ja) 2019-09-25

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JP2016533638A Active JP6580042B2 (ja) 2013-11-27 2014-11-12 基板研磨中の研磨速度の制限的調整
JP2019154050A Pending JP2020010048A (ja) 2013-11-27 2019-08-26 基板研磨中の研磨速度の制限的調整

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JP2019154050A Pending JP2020010048A (ja) 2013-11-27 2019-08-26 基板研磨中の研磨速度の制限的調整

Country Status (6)

Country Link
US (2) US9490186B2 (enExample)
JP (2) JP6580042B2 (enExample)
KR (1) KR102290965B1 (enExample)
CN (1) CN105745743B (enExample)
TW (1) TWI678261B (enExample)
WO (1) WO2015080864A1 (enExample)

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TWI816620B (zh) 2017-04-21 2023-09-21 美商應用材料股份有限公司 使用神經網路來監測的拋光裝置
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JP6860451B2 (ja) 2017-09-05 2021-04-14 株式会社荏原製作所 機能性チップを備える基板を研磨する方法
KR102491575B1 (ko) * 2017-09-28 2023-01-25 삼성전자주식회사 반도체 기판을 검사하는 방법 및 이를 이용하여 반도체 소자를 제조 하는 방법
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CN108527144B (zh) * 2018-03-28 2019-11-15 昆山国显光电有限公司 基板研磨装置及其研磨方法
TWI825075B (zh) 2018-04-03 2023-12-11 美商應用材料股份有限公司 針對墊子厚度使用機器學習及補償的拋光裝置、拋光系統、方法及電腦儲存媒體
WO2020067914A1 (en) 2018-09-26 2020-04-02 Applied Materials, Inc. Compensation for substrate doping in edge reconstruction for in-situ electromagnetic inductive monitoring
JP2020053550A (ja) * 2018-09-27 2020-04-02 株式会社荏原製作所 研磨装置、研磨方法、及び機械学習装置
US11989492B2 (en) * 2018-12-26 2024-05-21 Applied Materials, Inc. Preston matrix generator
CN111863613A (zh) * 2019-04-08 2020-10-30 清华大学 一种化学机械抛光方法、装置、系统及控制设备
JP7460411B2 (ja) * 2020-03-24 2024-04-02 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置及び基板処理方法
TWI809389B (zh) * 2020-06-08 2023-07-21 美商應用材料股份有限公司 用於在拋光相鄰導電層的堆疊期間的輪廓控制的系統、方法及電腦程式產品
WO2021262450A1 (en) 2020-06-24 2021-12-30 Applied Materials, Inc. Determination of substrate layer thickness with polishing pad wear compensation
JP7637482B2 (ja) * 2020-08-11 2025-02-28 株式会社荏原製作所 基板処理装置及び研磨部材のドレッシング制御方法
JP7504713B2 (ja) 2020-08-19 2024-06-24 キオクシア株式会社 半導体製造装置及び半導体製造方法
CN111993265B (zh) * 2020-08-28 2021-11-26 上海华力微电子有限公司 判断研磨头的胶膜是否扭曲的方法
JP7592364B2 (ja) * 2021-03-01 2024-12-02 株式会社ディスコ 研削装置
KR20230148373A (ko) 2021-03-05 2023-10-24 어플라이드 머티어리얼스, 인코포레이티드 기판 세차운동을 이용한 기판 연마를 위한 처리 파라미터들의 제어
US12420373B2 (en) * 2021-03-05 2025-09-23 Applied Materials, Inc. Control of processing parameters during substrate polishing using cost function
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