KR102290965B1 - 기판 폴리싱 동안의 폴리싱 레이트들의 제한적인 조정 - Google Patents

기판 폴리싱 동안의 폴리싱 레이트들의 제한적인 조정 Download PDF

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KR102290965B1
KR102290965B1 KR1020167017239A KR20167017239A KR102290965B1 KR 102290965 B1 KR102290965 B1 KR 102290965B1 KR 1020167017239 A KR1020167017239 A KR 1020167017239A KR 20167017239 A KR20167017239 A KR 20167017239A KR 102290965 B1 KR102290965 B1 KR 102290965B1
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Prior art keywords
polishing
polishing rate
time
adjustment
substrate
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KR20160089517A (ko
Inventor
도미닉 제이. 벤베뉴
벤자민 체리안
시바쿠마르 단다파니
해리 큐. 리
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어플라이드 머티어리얼스, 인코포레이티드
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
    • H01L22/26—Acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection, in-situ thickness measurement
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/005—Control means for lapping machines or devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
    • B24B49/02—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation according to the instantaneous size and required size of the workpiece acted upon, the measuring or gauging being continuous or intermittent
    • B24B49/04—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation according to the instantaneous size and required size of the workpiece acted upon, the measuring or gauging being continuous or intermittent involving measurement of the workpiece at the place of grinding during grinding operation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Constituent Portions Of Griding Lathes, Driving, Sensing And Control (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
KR1020167017239A 2013-11-27 2014-11-12 기판 폴리싱 동안의 폴리싱 레이트들의 제한적인 조정 Active KR102290965B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US14/092,429 US9490186B2 (en) 2013-11-27 2013-11-27 Limiting adjustment of polishing rates during substrate polishing
US14/092,429 2013-11-27
PCT/US2014/065243 WO2015080864A1 (en) 2013-11-27 2014-11-12 Limiting adjustment of polishing rates during substrate polishing

Publications (2)

Publication Number Publication Date
KR20160089517A KR20160089517A (ko) 2016-07-27
KR102290965B1 true KR102290965B1 (ko) 2021-08-17

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KR1020167017239A Active KR102290965B1 (ko) 2013-11-27 2014-11-12 기판 폴리싱 동안의 폴리싱 레이트들의 제한적인 조정

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US (2) US9490186B2 (enExample)
JP (2) JP6580042B2 (enExample)
KR (1) KR102290965B1 (enExample)
CN (1) CN105745743B (enExample)
TW (1) TWI678261B (enExample)
WO (1) WO2015080864A1 (enExample)

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KR20160045299A (ko) * 2014-10-17 2016-04-27 도쿄엘렉트론가부시키가이샤 기판 처리 장치, 연계 처리 시스템 및 기판 처리 방법
JP7044774B2 (ja) * 2016-10-10 2022-03-30 アプライド マテリアルズ インコーポレイテッド 化学機械研磨のためのリアルタイム・プロファイル制御
KR102525737B1 (ko) * 2016-11-16 2023-04-26 주식회사 케이씨텍 화학 기계적 연마장치 및 그 제어방법
TWI816620B (zh) 2017-04-21 2023-09-21 美商應用材料股份有限公司 使用神經網路來監測的拋光裝置
JP7023062B2 (ja) * 2017-07-24 2022-02-21 株式会社荏原製作所 基板研磨装置及び方法
JP7023063B2 (ja) * 2017-08-08 2022-02-21 株式会社荏原製作所 基板研磨装置及び方法
JP6860451B2 (ja) 2017-09-05 2021-04-14 株式会社荏原製作所 機能性チップを備える基板を研磨する方法
KR102491575B1 (ko) * 2017-09-28 2023-01-25 삼성전자주식회사 반도체 기판을 검사하는 방법 및 이를 이용하여 반도체 소자를 제조 하는 방법
KR102414470B1 (ko) 2017-11-16 2022-06-30 어플라이드 머티어리얼스, 인코포레이티드 연마 패드 마모율 모니터링을 위한 예측 필터
CN110071041B (zh) * 2018-01-22 2021-04-27 长鑫存储技术有限公司 浅沟槽隔离结构的制备方法、化学机械研磨方法及系统
KR102853782B1 (ko) 2018-03-12 2025-09-03 어플라이드 머티어리얼스, 인코포레이티드 연마의 인-시튜 모니터링 동안의 필터링
CN108527144B (zh) * 2018-03-28 2019-11-15 昆山国显光电有限公司 基板研磨装置及其研磨方法
TWI825075B (zh) 2018-04-03 2023-12-11 美商應用材料股份有限公司 針對墊子厚度使用機器學習及補償的拋光裝置、拋光系統、方法及電腦儲存媒體
WO2020067914A1 (en) 2018-09-26 2020-04-02 Applied Materials, Inc. Compensation for substrate doping in edge reconstruction for in-situ electromagnetic inductive monitoring
JP2020053550A (ja) * 2018-09-27 2020-04-02 株式会社荏原製作所 研磨装置、研磨方法、及び機械学習装置
US11989492B2 (en) * 2018-12-26 2024-05-21 Applied Materials, Inc. Preston matrix generator
CN111863613A (zh) * 2019-04-08 2020-10-30 清华大学 一种化学机械抛光方法、装置、系统及控制设备
JP7460411B2 (ja) * 2020-03-24 2024-04-02 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置及び基板処理方法
TWI809389B (zh) * 2020-06-08 2023-07-21 美商應用材料股份有限公司 用於在拋光相鄰導電層的堆疊期間的輪廓控制的系統、方法及電腦程式產品
WO2021262450A1 (en) 2020-06-24 2021-12-30 Applied Materials, Inc. Determination of substrate layer thickness with polishing pad wear compensation
JP7637482B2 (ja) * 2020-08-11 2025-02-28 株式会社荏原製作所 基板処理装置及び研磨部材のドレッシング制御方法
JP7504713B2 (ja) 2020-08-19 2024-06-24 キオクシア株式会社 半導体製造装置及び半導体製造方法
CN111993265B (zh) * 2020-08-28 2021-11-26 上海华力微电子有限公司 判断研磨头的胶膜是否扭曲的方法
JP7592364B2 (ja) * 2021-03-01 2024-12-02 株式会社ディスコ 研削装置
KR20230148373A (ko) 2021-03-05 2023-10-24 어플라이드 머티어리얼스, 인코포레이티드 기판 세차운동을 이용한 기판 연마를 위한 처리 파라미터들의 제어
US12420373B2 (en) * 2021-03-05 2025-09-23 Applied Materials, Inc. Control of processing parameters during substrate polishing using cost function
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JP2002513138A (ja) 1998-04-24 2002-05-08 マイクロン テクノロジー インコーポレイテッド 基板ホルダの高さ検出による化学的機械的研磨における終了点検出
US20030087459A1 (en) 2001-10-04 2003-05-08 Thomas Laursen Flexible snapshot in endpoint detection
JP2008503356A (ja) * 2004-06-21 2008-02-07 株式会社荏原製作所 研磨装置および研磨方法
JP2013529386A (ja) * 2010-05-17 2013-07-18 アプライド マテリアルズ インコーポレイテッド 化学機械研磨における研磨速度補正のためのフィードバック
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Also Published As

Publication number Publication date
CN105745743A (zh) 2016-07-06
US9490186B2 (en) 2016-11-08
WO2015080864A1 (en) 2015-06-04
JP6580042B2 (ja) 2019-09-25
CN105745743B (zh) 2019-10-11
JP2020010048A (ja) 2020-01-16
US20160372388A1 (en) 2016-12-22
US9607910B2 (en) 2017-03-28
TWI678261B (zh) 2019-12-01
KR20160089517A (ko) 2016-07-27
US20150147829A1 (en) 2015-05-28
TW201524682A (zh) 2015-07-01
JP2016538728A (ja) 2016-12-08

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