TWI678261B - 基板硏磨期間之硏磨速率的限制性調整 - Google Patents

基板硏磨期間之硏磨速率的限制性調整 Download PDF

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Publication number
TWI678261B
TWI678261B TW103139799A TW103139799A TWI678261B TW I678261 B TWI678261 B TW I678261B TW 103139799 A TW103139799 A TW 103139799A TW 103139799 A TW103139799 A TW 103139799A TW I678261 B TWI678261 B TW I678261B
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TW
Taiwan
Prior art keywords
adjustment
grinding
rate
time
polishing
Prior art date
Application number
TW103139799A
Other languages
English (en)
Chinese (zh)
Other versions
TW201524682A (zh
Inventor
班維紐多明尼克Ｊ
Dominic J. Benvegnu
傑瑞安班傑明
Benjamin Cherian
迪漢達潘尼席維庫瑪
Sivakumar Dhandapani
李哈利Ｑ
Harry Q. Lee
Original Assignee
美商應用材料股份有限公司
Applied Materials, Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 美商應用材料股份有限公司, Applied Materials, Inc. filed Critical 美商應用材料股份有限公司
Publication of TW201524682A publication Critical patent/TW201524682A/zh
Application granted granted Critical
Publication of TWI678261B publication Critical patent/TWI678261B/zh

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/23—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes
    • H10P74/238—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes comprising acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection or in-situ thickness measurement
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/005—Control means for lapping machines or devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
    • B24B49/02—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation according to the instantaneous size and required size of the workpiece acted upon, the measuring or gauging being continuous or intermittent
    • B24B49/04—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation according to the instantaneous size and required size of the workpiece acted upon, the measuring or gauging being continuous or intermittent involving measurement of the workpiece at the place of grinding during grinding operation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/402—Chemomechanical polishing [CMP] of semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Constituent Portions Of Griding Lathes, Driving, Sensing And Control (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
TW103139799A 2013-11-27 2014-11-17 基板硏磨期間之硏磨速率的限制性調整 TWI678261B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US14/092,429 US9490186B2 (en) 2013-11-27 2013-11-27 Limiting adjustment of polishing rates during substrate polishing
US14/092,429 2013-11-27

Publications (2)

Publication Number Publication Date
TW201524682A TW201524682A (zh) 2015-07-01
TWI678261B true TWI678261B (zh) 2019-12-01

Family

ID=53182996

Family Applications (1)

Application Number Title Priority Date Filing Date
TW103139799A TWI678261B (zh) 2013-11-27 2014-11-17 基板硏磨期間之硏磨速率的限制性調整

Country Status (6)

Country Link
US (2) US9490186B2 (enExample)
JP (2) JP6580042B2 (enExample)
KR (1) KR102290965B1 (enExample)
CN (1) CN105745743B (enExample)
TW (1) TWI678261B (enExample)
WO (1) WO2015080864A1 (enExample)

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US10562148B2 (en) 2016-10-10 2020-02-18 Applied Materials, Inc. Real time profile control for chemical mechanical polishing
KR102525737B1 (ko) * 2016-11-16 2023-04-26 주식회사 케이씨텍 화학 기계적 연마장치 및 그 제어방법
TWI816620B (zh) 2017-04-21 2023-09-21 美商應用材料股份有限公司 使用神經網路來監測的拋光裝置
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KR102491575B1 (ko) * 2017-09-28 2023-01-25 삼성전자주식회사 반도체 기판을 검사하는 방법 및 이를 이용하여 반도체 소자를 제조 하는 방법
US11504821B2 (en) * 2017-11-16 2022-11-22 Applied Materials, Inc. Predictive filter for polishing pad wear rate monitoring
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JP7237083B2 (ja) * 2018-03-12 2023-03-10 アプライド マテリアルズ インコーポレイテッド 研磨のインシトゥモニタリングにおけるフィルタリング
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JP2020053550A (ja) * 2018-09-27 2020-04-02 株式会社荏原製作所 研磨装置、研磨方法、及び機械学習装置
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CN111863613A (zh) * 2019-04-08 2020-10-30 清华大学 一种化学机械抛光方法、装置、系统及控制设备
JP7460411B2 (ja) * 2020-03-24 2024-04-02 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置及び基板処理方法
TWI809389B (zh) 2020-06-08 2023-07-21 美商應用材料股份有限公司 用於在拋光相鄰導電層的堆疊期間的輪廓控制的系統、方法及電腦程式產品
JP7447284B2 (ja) 2020-06-24 2024-03-11 アプライド マテリアルズ インコーポレイテッド 研磨パッドの摩耗補償による基板層の厚さの決定
JP7637482B2 (ja) * 2020-08-11 2025-02-28 株式会社荏原製作所 基板処理装置及び研磨部材のドレッシング制御方法
JP7504713B2 (ja) 2020-08-19 2024-06-24 キオクシア株式会社 半導体製造装置及び半導体製造方法
CN111993265B (zh) * 2020-08-28 2021-11-26 上海华力微电子有限公司 判断研磨头的胶膜是否扭曲的方法
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JP7592364B2 (ja) * 2021-03-01 2024-12-02 株式会社ディスコ 研削装置
JP7684058B2 (ja) * 2021-03-01 2025-05-27 株式会社荏原製作所 研磨装置および研磨方法
KR102757747B1 (ko) * 2021-03-05 2025-01-21 어플라이드 머티어리얼스, 인코포레이티드 기판 연마 동안 비용 함수 또는 예상되는 장래 파라미터 변경들을 사용한 처리 파라미터들의 제어
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Also Published As

Publication number Publication date
WO2015080864A1 (en) 2015-06-04
US9607910B2 (en) 2017-03-28
KR102290965B1 (ko) 2021-08-17
KR20160089517A (ko) 2016-07-27
JP6580042B2 (ja) 2019-09-25
US20160372388A1 (en) 2016-12-22
US20150147829A1 (en) 2015-05-28
TW201524682A (zh) 2015-07-01
JP2016538728A (ja) 2016-12-08
CN105745743A (zh) 2016-07-06
CN105745743B (zh) 2019-10-11
JP2020010048A (ja) 2020-01-16
US9490186B2 (en) 2016-11-08

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