TWI678261B - 基板硏磨期間之硏磨速率的限制性調整 - Google Patents
基板硏磨期間之硏磨速率的限制性調整 Download PDFInfo
- Publication number
- TWI678261B TWI678261B TW103139799A TW103139799A TWI678261B TW I678261 B TWI678261 B TW I678261B TW 103139799 A TW103139799 A TW 103139799A TW 103139799 A TW103139799 A TW 103139799A TW I678261 B TWI678261 B TW I678261B
- Authority
- TW
- Taiwan
- Prior art keywords
- adjustment
- grinding
- rate
- time
- polishing
- Prior art date
Links
Classifications
-
- H10P52/00—
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
- H01L22/26—Acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection, in-situ thickness measurement
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/005—Control means for lapping machines or devices
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
- B24B49/02—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation according to the instantaneous size and required size of the workpiece acted upon, the measuring or gauging being continuous or intermittent
- B24B49/04—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation according to the instantaneous size and required size of the workpiece acted upon, the measuring or gauging being continuous or intermittent involving measurement of the workpiece at the place of grinding during grinding operation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
-
- H10P52/402—
-
- H10P74/203—
-
- H10P74/238—
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Constituent Portions Of Griding Lathes, Driving, Sensing And Control (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US14/092,429 | 2013-11-27 | ||
| US14/092,429 US9490186B2 (en) | 2013-11-27 | 2013-11-27 | Limiting adjustment of polishing rates during substrate polishing |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201524682A TW201524682A (zh) | 2015-07-01 |
| TWI678261B true TWI678261B (zh) | 2019-12-01 |
Family
ID=53182996
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW103139799A TWI678261B (zh) | 2013-11-27 | 2014-11-17 | 基板硏磨期間之硏磨速率的限制性調整 |
Country Status (6)
| Country | Link |
|---|---|
| US (2) | US9490186B2 (enExample) |
| JP (2) | JP6580042B2 (enExample) |
| KR (1) | KR102290965B1 (enExample) |
| CN (1) | CN105745743B (enExample) |
| TW (1) | TWI678261B (enExample) |
| WO (1) | WO2015080864A1 (enExample) |
Families Citing this family (30)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8694144B2 (en) | 2010-08-30 | 2014-04-08 | Applied Materials, Inc. | Endpoint control of multiple substrates of varying thickness on the same platen in chemical mechanical polishing |
| KR20160045299A (ko) * | 2014-10-17 | 2016-04-27 | 도쿄엘렉트론가부시키가이샤 | 기판 처리 장치, 연계 처리 시스템 및 기판 처리 방법 |
| CN109844923B (zh) * | 2016-10-10 | 2023-07-11 | 应用材料公司 | 用于化学机械抛光的实时轮廓控制 |
| KR102525737B1 (ko) * | 2016-11-16 | 2023-04-26 | 주식회사 케이씨텍 | 화학 기계적 연마장치 및 그 제어방법 |
| TWI789385B (zh) | 2017-04-21 | 2023-01-11 | 美商應用材料股份有限公司 | 使用神經網路來監測的拋光裝置 |
| JP7023062B2 (ja) * | 2017-07-24 | 2022-02-21 | 株式会社荏原製作所 | 基板研磨装置及び方法 |
| JP7023063B2 (ja) * | 2017-08-08 | 2022-02-21 | 株式会社荏原製作所 | 基板研磨装置及び方法 |
| JP6860451B2 (ja) * | 2017-09-05 | 2021-04-14 | 株式会社荏原製作所 | 機能性チップを備える基板を研磨する方法 |
| KR102491575B1 (ko) * | 2017-09-28 | 2023-01-25 | 삼성전자주식회사 | 반도체 기판을 검사하는 방법 및 이를 이용하여 반도체 소자를 제조 하는 방법 |
| CN111132802B (zh) * | 2017-11-16 | 2025-10-10 | 应用材料公司 | 用于抛光垫磨损率监测的预测滤波器 |
| CN110071041B (zh) * | 2018-01-22 | 2021-04-27 | 长鑫存储技术有限公司 | 浅沟槽隔离结构的制备方法、化学机械研磨方法及系统 |
| US11446783B2 (en) | 2018-03-12 | 2022-09-20 | Applied Materials, Inc. | Filtering during in-situ monitoring of polishing |
| CN108527144B (zh) * | 2018-03-28 | 2019-11-15 | 昆山国显光电有限公司 | 基板研磨装置及其研磨方法 |
| TWI845444B (zh) | 2018-04-03 | 2024-06-11 | 美商應用材料股份有限公司 | 針對墊子厚度使用機器學習及補償的拋光裝置、拋光系統、方法及電腦儲存媒體 |
| KR102631891B1 (ko) | 2018-09-26 | 2024-02-01 | 어플라이드 머티어리얼스, 인코포레이티드 | 인-시튜 전자기 유도 모니터링에 대한 가장자리 재구성에서의 기판 도핑에 대한 보상 |
| JP2020053550A (ja) * | 2018-09-27 | 2020-04-02 | 株式会社荏原製作所 | 研磨装置、研磨方法、及び機械学習装置 |
| US11989492B2 (en) * | 2018-12-26 | 2024-05-21 | Applied Materials, Inc. | Preston matrix generator |
| CN111863613A (zh) * | 2019-04-08 | 2020-10-30 | 清华大学 | 一种化学机械抛光方法、装置、系统及控制设备 |
| JP7460411B2 (ja) * | 2020-03-24 | 2024-04-02 | 株式会社Screenホールディングス | 基板処理装置及び基板処理方法 |
| TWI809389B (zh) * | 2020-06-08 | 2023-07-21 | 美商應用材料股份有限公司 | 用於在拋光相鄰導電層的堆疊期間的輪廓控制的系統、方法及電腦程式產品 |
| JP7447284B2 (ja) | 2020-06-24 | 2024-03-11 | アプライド マテリアルズ インコーポレイテッド | 研磨パッドの摩耗補償による基板層の厚さの決定 |
| JP7637482B2 (ja) * | 2020-08-11 | 2025-02-28 | 株式会社荏原製作所 | 基板処理装置及び研磨部材のドレッシング制御方法 |
| JP7504713B2 (ja) | 2020-08-19 | 2024-06-24 | キオクシア株式会社 | 半導体製造装置及び半導体製造方法 |
| CN111993265B (zh) * | 2020-08-28 | 2021-11-26 | 上海华力微电子有限公司 | 判断研磨头的胶膜是否扭曲的方法 |
| JP7684058B2 (ja) * | 2021-03-01 | 2025-05-27 | 株式会社荏原製作所 | 研磨装置および研磨方法 |
| JP7592364B2 (ja) * | 2021-03-01 | 2024-12-02 | 株式会社ディスコ | 研削装置 |
| US11969854B2 (en) | 2021-03-05 | 2024-04-30 | Applied Materials, Inc. | Control of processing parameters during substrate polishing using expected future parameter changes |
| WO2022187105A1 (en) * | 2021-03-05 | 2022-09-09 | Applied Materials, Inc. | Control of processing parameters for substrate polishing with substrate precession |
| US11969140B2 (en) * | 2021-06-22 | 2024-04-30 | Micron Technology, Inc. | Surface cleaning |
| JP2024526637A (ja) * | 2021-07-06 | 2024-07-19 | アプライド マテリアルズ インコーポレイテッド | 光学センサを用いた化学機械研磨振動測定 |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6309276B1 (en) * | 2000-02-01 | 2001-10-30 | Applied Materials, Inc. | Endpoint monitoring with polishing rate change |
| US6361646B1 (en) * | 1998-06-08 | 2002-03-26 | Speedfam-Ipec Corporation | Method and apparatus for endpoint detection for chemical mechanical polishing |
| TW201210742A (en) * | 2010-05-17 | 2012-03-16 | Applied Materials Inc | Feedback for polishing rate correction in chemical mechanical polishing |
| US20130280827A1 (en) * | 2012-04-23 | 2013-10-24 | Dominic J. Benvegnu | Method of controlling polishing using in-situ optical monitoring and fourier transform |
| US20130288571A1 (en) * | 2012-04-25 | 2013-10-31 | Jeffrey Drue David | Feed forward and feed-back techniques for in-situ process control |
Family Cites Families (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6075606A (en) * | 1996-02-16 | 2000-06-13 | Doan; Trung T. | Endpoint detector and method for measuring a change in wafer thickness in chemical-mechanical polishing of semiconductor wafers and other microelectronic substrates |
| US6676482B2 (en) | 2001-04-20 | 2004-01-13 | Speedfam-Ipec Corporation | Learning method and apparatus for predictive determination of endpoint during chemical mechanical planarization using sparse sampling |
| US6821794B2 (en) * | 2001-10-04 | 2004-11-23 | Novellus Systems, Inc. | Flexible snapshot in endpoint detection |
| US7087527B2 (en) | 2002-08-28 | 2006-08-08 | Micron Technology, Inc. | Extended kalman filter incorporating offline metrology |
| EP1758711B1 (en) * | 2004-06-21 | 2013-08-07 | Ebara Corporation | Polishing apparatus and polishing method |
| JP2006055553A (ja) * | 2004-08-24 | 2006-03-02 | Aruze Corp | 遊技システム |
| US7409260B2 (en) | 2005-08-22 | 2008-08-05 | Applied Materials, Inc. | Substrate thickness measuring during polishing |
| US8260446B2 (en) | 2005-08-22 | 2012-09-04 | Applied Materials, Inc. | Spectrographic monitoring of a substrate during processing using index values |
| US7930058B2 (en) * | 2006-01-30 | 2011-04-19 | Memc Electronic Materials, Inc. | Nanotopography control and optimization using feedback from warp data |
| JP4878943B2 (ja) * | 2006-07-13 | 2012-02-15 | 日立造船株式会社 | ロータリキルン炉への燃焼空気の供給制御方法および供給制御装置 |
| US7821257B2 (en) | 2007-09-03 | 2010-10-26 | Tokyo Seimitsu Co., Ltd | Method and device for forecasting/detecting polishing end point and method and device for monitoring real-time film thickness |
| JP2009131131A (ja) * | 2007-11-28 | 2009-06-11 | Toyota Motor Corp | 無線エネルギ取得装置及び無線エネルギ伝送システム |
| KR101834944B1 (ko) | 2008-09-04 | 2018-03-06 | 어플라이드 머티어리얼스, 인코포레이티드 | 프로세싱 동안 기판의 분광 모니터링의 이용에 의한 연마 속도들의 조정 |
| US8295967B2 (en) | 2008-11-07 | 2012-10-23 | Applied Materials, Inc. | Endpoint control of multiple-wafer chemical mechanical polishing |
| US8751033B2 (en) | 2008-11-14 | 2014-06-10 | Applied Materials, Inc. | Adaptive tracking spectrum features for endpoint detection |
| US20110282477A1 (en) | 2010-05-17 | 2011-11-17 | Applied Materials, Inc. | Endpoint control of multiple substrates with multiple zones on the same platen in chemical mechanical polishing |
| KR101892914B1 (ko) | 2012-03-08 | 2018-08-29 | 어플라이드 머티어리얼스, 인코포레이티드 | 측정된 스펙트럼에 대한 광학 모델의 피팅 |
| US9308618B2 (en) | 2012-04-26 | 2016-04-12 | Applied Materials, Inc. | Linear prediction for filtering of data during in-situ monitoring of polishing |
-
2013
- 2013-11-27 US US14/092,429 patent/US9490186B2/en active Active
-
2014
- 2014-11-12 CN CN201480063533.2A patent/CN105745743B/zh active Active
- 2014-11-12 WO PCT/US2014/065243 patent/WO2015080864A1/en not_active Ceased
- 2014-11-12 JP JP2016533638A patent/JP6580042B2/ja active Active
- 2014-11-12 KR KR1020167017239A patent/KR102290965B1/ko active Active
- 2014-11-17 TW TW103139799A patent/TWI678261B/zh active
-
2016
- 2016-09-06 US US15/257,785 patent/US9607910B2/en active Active
-
2019
- 2019-08-26 JP JP2019154050A patent/JP2020010048A/ja active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6361646B1 (en) * | 1998-06-08 | 2002-03-26 | Speedfam-Ipec Corporation | Method and apparatus for endpoint detection for chemical mechanical polishing |
| US6309276B1 (en) * | 2000-02-01 | 2001-10-30 | Applied Materials, Inc. | Endpoint monitoring with polishing rate change |
| TW201210742A (en) * | 2010-05-17 | 2012-03-16 | Applied Materials Inc | Feedback for polishing rate correction in chemical mechanical polishing |
| US20120231701A1 (en) * | 2010-05-17 | 2012-09-13 | Jun Qian | Feedback for polishing rate correction in chemical mechanical polishing |
| US20130280827A1 (en) * | 2012-04-23 | 2013-10-24 | Dominic J. Benvegnu | Method of controlling polishing using in-situ optical monitoring and fourier transform |
| US20130288571A1 (en) * | 2012-04-25 | 2013-10-31 | Jeffrey Drue David | Feed forward and feed-back techniques for in-situ process control |
Also Published As
| Publication number | Publication date |
|---|---|
| JP6580042B2 (ja) | 2019-09-25 |
| US20160372388A1 (en) | 2016-12-22 |
| US9490186B2 (en) | 2016-11-08 |
| JP2016538728A (ja) | 2016-12-08 |
| WO2015080864A1 (en) | 2015-06-04 |
| TW201524682A (zh) | 2015-07-01 |
| JP2020010048A (ja) | 2020-01-16 |
| CN105745743A (zh) | 2016-07-06 |
| US20150147829A1 (en) | 2015-05-28 |
| KR102290965B1 (ko) | 2021-08-17 |
| KR20160089517A (ko) | 2016-07-27 |
| CN105745743B (zh) | 2019-10-11 |
| US9607910B2 (en) | 2017-03-28 |
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