TWI678261B - 基板硏磨期間之硏磨速率的限制性調整 - Google Patents

基板硏磨期間之硏磨速率的限制性調整 Download PDF

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Publication number
TWI678261B
TWI678261B TW103139799A TW103139799A TWI678261B TW I678261 B TWI678261 B TW I678261B TW 103139799 A TW103139799 A TW 103139799A TW 103139799 A TW103139799 A TW 103139799A TW I678261 B TWI678261 B TW I678261B
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TW
Taiwan
Prior art keywords
adjustment
grinding
rate
time
polishing
Prior art date
Application number
TW103139799A
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English (en)
Chinese (zh)
Other versions
TW201524682A (zh
Inventor
班維紐多明尼克Ｊ
Dominic J. Benvegnu
傑瑞安班傑明
Benjamin Cherian
迪漢達潘尼席維庫瑪
Sivakumar Dhandapani
李哈利Ｑ
Harry Q. Lee
Original Assignee
美商應用材料股份有限公司
Applied Materials, Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 美商應用材料股份有限公司, Applied Materials, Inc. filed Critical 美商應用材料股份有限公司
Publication of TW201524682A publication Critical patent/TW201524682A/zh
Application granted granted Critical
Publication of TWI678261B publication Critical patent/TWI678261B/zh

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/23—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes
    • H10P74/238—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes comprising acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection or in-situ thickness measurement
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/005—Control means for lapping machines or devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
    • B24B49/02—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation according to the instantaneous size and required size of the workpiece acted upon, the measuring or gauging being continuous or intermittent
    • B24B49/04—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation according to the instantaneous size and required size of the workpiece acted upon, the measuring or gauging being continuous or intermittent involving measurement of the workpiece at the place of grinding during grinding operation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/402—Chemomechanical polishing [CMP] of semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Constituent Portions Of Griding Lathes, Driving, Sensing And Control (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
TW103139799A 2013-11-27 2014-11-17 基板硏磨期間之硏磨速率的限制性調整 TWI678261B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US14/092,429 US9490186B2 (en) 2013-11-27 2013-11-27 Limiting adjustment of polishing rates during substrate polishing
US14/092,429 2013-11-27

Publications (2)

Publication Number Publication Date
TW201524682A TW201524682A (zh) 2015-07-01
TWI678261B true TWI678261B (zh) 2019-12-01

Family

ID=53182996

Family Applications (1)

Application Number Title Priority Date Filing Date
TW103139799A TWI678261B (zh) 2013-11-27 2014-11-17 基板硏磨期間之硏磨速率的限制性調整

Country Status (6)

Country Link
US (2) US9490186B2 (enExample)
JP (2) JP6580042B2 (enExample)
KR (1) KR102290965B1 (enExample)
CN (1) CN105745743B (enExample)
TW (1) TWI678261B (enExample)
WO (1) WO2015080864A1 (enExample)

Families Citing this family (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8694144B2 (en) 2010-08-30 2014-04-08 Applied Materials, Inc. Endpoint control of multiple substrates of varying thickness on the same platen in chemical mechanical polishing
KR20160045299A (ko) * 2014-10-17 2016-04-27 도쿄엘렉트론가부시키가이샤 기판 처리 장치, 연계 처리 시스템 및 기판 처리 방법
TWI733915B (zh) * 2016-10-10 2021-07-21 美商應用材料股份有限公司 控制基板的處理的方法，及其研磨系統和電腦程式產品
KR102525737B1 (ko) * 2016-11-16 2023-04-26 주식회사 케이씨텍 화학 기계적 연마장치 및 그 제어방법
TWI789385B (zh) * 2017-04-21 2023-01-11 美商應用材料股份有限公司 使用神經網路來監測的拋光裝置
JP7023062B2 (ja) * 2017-07-24 2022-02-21 株式会社荏原製作所 基板研磨装置及び方法
JP7023063B2 (ja) * 2017-08-08 2022-02-21 株式会社荏原製作所 基板研磨装置及び方法
JP6860451B2 (ja) 2017-09-05 2021-04-14 株式会社荏原製作所 機能性チップを備える基板を研磨する方法
KR102491575B1 (ko) * 2017-09-28 2023-01-25 삼성전자주식회사 반도체 기판을 검사하는 방법 및 이를 이용하여 반도체 소자를 제조 하는 방법
US11504821B2 (en) 2017-11-16 2022-11-22 Applied Materials, Inc. Predictive filter for polishing pad wear rate monitoring
CN110071041B (zh) * 2018-01-22 2021-04-27 长鑫存储技术有限公司 浅沟槽隔离结构的制备方法、化学机械研磨方法及系统
KR102853782B1 (ko) * 2018-03-12 2025-09-03 어플라이드 머티어리얼스, 인코포레이티드 연마의 인-시튜 모니터링 동안의 필터링
CN108527144B (zh) * 2018-03-28 2019-11-15 昆山国显光电有限公司 基板研磨装置及其研磨方法
TWI825075B (zh) 2018-04-03 2023-12-11 美商應用材料股份有限公司 針對墊子厚度使用機器學習及補償的拋光裝置、拋光系統、方法及電腦儲存媒體
CN111886686B (zh) 2018-09-26 2024-08-02 应用材料公司 针对原位电磁感应监测的边缘重建中的基板掺杂的补偿
JP2020053550A (ja) * 2018-09-27 2020-04-02 株式会社荏原製作所 研磨装置、研磨方法、及び機械学習装置
US11989492B2 (en) * 2018-12-26 2024-05-21 Applied Materials, Inc. Preston matrix generator
CN111863613A (zh) * 2019-04-08 2020-10-30 清华大学 一种化学机械抛光方法、装置、系统及控制设备
JP7460411B2 (ja) * 2020-03-24 2024-04-02 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置及び基板処理方法
TWI810069B (zh) 2020-06-08 2023-07-21 美商應用材料股份有限公司 用於在拋光相鄰導電層的堆疊期間的輪廓控制的系統、方法及電腦程式產品
CN115038549B (zh) 2020-06-24 2024-03-12 应用材料公司 使用研磨垫磨损补偿的基板层厚度确定
JP7637482B2 (ja) * 2020-08-11 2025-02-28 株式会社荏原製作所 基板処理装置及び研磨部材のドレッシング制御方法
JP7504713B2 (ja) 2020-08-19 2024-06-24 キオクシア株式会社 半導体製造装置及び半導体製造方法
CN111993265B (zh) * 2020-08-28 2021-11-26 上海华力微电子有限公司 判断研磨头的胶膜是否扭曲的方法
US20220176513A1 (en) * 2020-11-24 2022-06-09 Ebara Corporation Polishing method, polishing monitoring method and polishing monitoring apparatus for workpiece
JP7684058B2 (ja) * 2021-03-01 2025-05-27 株式会社荏原製作所 研磨装置および研磨方法
JP7592364B2 (ja) * 2021-03-01 2024-12-02 株式会社ディスコ 研削装置
JP7651001B2 (ja) 2021-03-05 2025-03-25 アプライド マテリアルズ インコーポレイテッド 基板歳差運動を伴う基板研磨のための処理パラメータの制御
US11969854B2 (en) * 2021-03-05 2024-04-30 Applied Materials, Inc. Control of processing parameters during substrate polishing using expected future parameter changes
US11969140B2 (en) * 2021-06-22 2024-04-30 Micron Technology, Inc. Surface cleaning
WO2023283559A1 (en) 2021-07-06 2023-01-12 Applied Materials, Inc. Chemical mechanical polishing vibration measurement using optical sensor
KR20250041367A (ko) * 2023-09-18 2025-03-25 삼성전자주식회사 기판 처리 방법

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6309276B1 (en) * 2000-02-01 2001-10-30 Applied Materials, Inc. Endpoint monitoring with polishing rate change
US6361646B1 (en) * 1998-06-08 2002-03-26 Speedfam-Ipec Corporation Method and apparatus for endpoint detection for chemical mechanical polishing
TW201210742A (en) * 2010-05-17 2012-03-16 Applied Materials Inc Feedback for polishing rate correction in chemical mechanical polishing
US20130280827A1 (en) * 2012-04-23 2013-10-24 Dominic J. Benvegnu Method of controlling polishing using in-situ optical monitoring and fourier transform
US20130288571A1 (en) * 2012-04-25 2013-10-31 Jeffrey Drue David Feed forward and feed-back techniques for in-situ process control

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6075606A (en) * 1996-02-16 2000-06-13 Doan; Trung T. Endpoint detector and method for measuring a change in wafer thickness in chemical-mechanical polishing of semiconductor wafers and other microelectronic substrates
US6676482B2 (en) 2001-04-20 2004-01-13 Speedfam-Ipec Corporation Learning method and apparatus for predictive determination of endpoint during chemical mechanical planarization using sparse sampling
US6821794B2 (en) 2001-10-04 2004-11-23 Novellus Systems, Inc. Flexible snapshot in endpoint detection
US7087527B2 (en) 2002-08-28 2006-08-08 Micron Technology, Inc. Extended kalman filter incorporating offline metrology
EP1758711B1 (en) * 2004-06-21 2013-08-07 Ebara Corporation Polishing apparatus and polishing method
JP2006055553A (ja) * 2004-08-24 2006-03-02 Aruze Corp 遊技システム
US7409260B2 (en) 2005-08-22 2008-08-05 Applied Materials, Inc. Substrate thickness measuring during polishing
US8260446B2 (en) 2005-08-22 2012-09-04 Applied Materials, Inc. Spectrographic monitoring of a substrate during processing using index values
US7930058B2 (en) * 2006-01-30 2011-04-19 Memc Electronic Materials, Inc. Nanotopography control and optimization using feedback from warp data
JP4878943B2 (ja) * 2006-07-13 2012-02-15 日立造船株式会社 ロータリキルン炉への燃焼空気の供給制御方法および供給制御装置
US7821257B2 (en) 2007-09-03 2010-10-26 Tokyo Seimitsu Co., Ltd Method and device for forecasting/detecting polishing end point and method and device for monitoring real-time film thickness
JP2009131131A (ja) * 2007-11-28 2009-06-11 Toyota Motor Corp 無線エネルギ取得装置及び無線エネルギ伝送システム
US8369978B2 (en) 2008-09-04 2013-02-05 Applied Materials Adjusting polishing rates by using spectrographic monitoring of a substrate during processing
US8295967B2 (en) 2008-11-07 2012-10-23 Applied Materials, Inc. Endpoint control of multiple-wafer chemical mechanical polishing
US8751033B2 (en) 2008-11-14 2014-06-10 Applied Materials, Inc. Adaptive tracking spectrum features for endpoint detection
US20110282477A1 (en) 2010-05-17 2011-11-17 Applied Materials, Inc. Endpoint control of multiple substrates with multiple zones on the same platen in chemical mechanical polishing
WO2013133974A1 (en) 2012-03-08 2013-09-12 Applied Materials, Inc. Fitting of optical model to measured spectrum
US9308618B2 (en) * 2012-04-26 2016-04-12 Applied Materials, Inc. Linear prediction for filtering of data during in-situ monitoring of polishing

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6361646B1 (en) * 1998-06-08 2002-03-26 Speedfam-Ipec Corporation Method and apparatus for endpoint detection for chemical mechanical polishing
US6309276B1 (en) * 2000-02-01 2001-10-30 Applied Materials, Inc. Endpoint monitoring with polishing rate change
TW201210742A (en) * 2010-05-17 2012-03-16 Applied Materials Inc Feedback for polishing rate correction in chemical mechanical polishing
US20120231701A1 (en) * 2010-05-17 2012-09-13 Jun Qian Feedback for polishing rate correction in chemical mechanical polishing
US20130280827A1 (en) * 2012-04-23 2013-10-24 Dominic J. Benvegnu Method of controlling polishing using in-situ optical monitoring and fourier transform
US20130288571A1 (en) * 2012-04-25 2013-10-31 Jeffrey Drue David Feed forward and feed-back techniques for in-situ process control

Also Published As

Publication number Publication date
JP2020010048A (ja) 2020-01-16
US20150147829A1 (en) 2015-05-28
JP6580042B2 (ja) 2019-09-25
US9490186B2 (en) 2016-11-08
TW201524682A (zh) 2015-07-01
WO2015080864A1 (en) 2015-06-04
US9607910B2 (en) 2017-03-28
CN105745743A (zh) 2016-07-06
US20160372388A1 (en) 2016-12-22
CN105745743B (zh) 2019-10-11
JP2016538728A (ja) 2016-12-08
KR102290965B1 (ko) 2021-08-17
KR20160089517A (ko) 2016-07-27

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