JP2016510953A5 - - Google Patents

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Publication number
JP2016510953A5
JP2016510953A5 JP2016500309A JP2016500309A JP2016510953A5 JP 2016510953 A5 JP2016510953 A5 JP 2016510953A5 JP 2016500309 A JP2016500309 A JP 2016500309A JP 2016500309 A JP2016500309 A JP 2016500309A JP 2016510953 A5 JP2016510953 A5 JP 2016510953A5
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JP
Japan
Prior art keywords
polishing
zones
zone
predicted
substrate
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JP2016500309A
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English (en)
Japanese (ja)
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JP6060308B2 (ja
JP2016510953A (ja
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Priority claimed from PCT/US2014/017277 external-priority patent/WO2014149330A1/en
Publication of JP2016510953A publication Critical patent/JP2016510953A/ja
Publication of JP2016510953A5 publication Critical patent/JP2016510953A5/ja
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JP2016500309A 2013-03-15 2014-02-20 インシトゥプロファイル制御（ｉｓｐｃ）を用いた残留物クリアリングの動的制御 Active JP6060308B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201361787221P 2013-03-15 2013-03-15
US61/787,221 2013-03-15
PCT/US2014/017277 WO2014149330A1 (en) 2013-03-15 2014-02-20 Dynamic residue clearing control with in-situ profile control (ispc)

Publications (3)

Publication Number Publication Date
JP2016510953A JP2016510953A (ja) 2016-04-11
JP2016510953A5 true JP2016510953A5 (enExample) 2016-11-04
JP6060308B2 JP6060308B2 (ja) 2017-01-11

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ID=51529181

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2016500309A Active JP6060308B2 (ja) 2013-03-15 2014-02-20 インシトゥプロファイル制御（ｉｓｐｃ）を用いた残留物クリアリングの動的制御

Country Status (5)

Country Link
US (1) US9242337B2 (enExample)
JP (1) JP6060308B2 (enExample)
KR (1) KR101699197B1 (enExample)
TW (1) TWI564946B (enExample)
WO (1) WO2014149330A1 (enExample)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9248544B2 (en) * 2012-07-18 2016-02-02 Applied Materials, Inc. Endpoint detection during polishing using integrated differential intensity
JP6447472B2 (ja) 2015-11-26 2019-01-09 株式会社Sumco ウェーハ研磨方法
JP6406238B2 (ja) * 2015-12-18 2018-10-17 株式会社Sumco ウェーハ研磨方法および研磨装置
TWI733915B (zh) 2016-10-10 2021-07-21 美商應用材料股份有限公司 控制基板的處理的方法，及其研磨系統和電腦程式產品
CN109906131B (zh) 2016-10-21 2021-05-11 应用材料公司 用于原位电磁感应监测系统的芯配置
KR102525737B1 (ko) * 2016-11-16 2023-04-26 주식회사 케이씨텍 화학 기계적 연마장치 및 그 제어방법
US11989492B2 (en) * 2018-12-26 2024-05-21 Applied Materials, Inc. Preston matrix generator
MX2021009145A (es) * 2019-01-31 2021-09-10 Hillman Group Inc Maquina afiladora de cuchillos automatica con deteccion de afilado.
JP7446714B2 (ja) * 2019-02-01 2024-03-11 株式会社荏原製作所 基板処理装置、および基板処理方法
JP7361637B2 (ja) * 2020-03-09 2023-10-16 株式会社荏原製作所 研磨方法、研磨装置、およびプログラムを記録したコンピュータ読み取り可能な記録媒体
TWI810069B (zh) * 2020-06-08 2023-07-21 美商應用材料股份有限公司 用於在拋光相鄰導電層的堆疊期間的輪廓控制的系統、方法及電腦程式產品
JP7560320B2 (ja) * 2020-10-29 2024-10-02 株式会社ディスコ ウェーハの研削方法
JP7651001B2 (ja) 2021-03-05 2025-03-25 アプライド マテリアルズ インコーポレイテッド 基板歳差運動を伴う基板研磨のための処理パラメータの制御
CN116230572B (zh) * 2023-03-09 2026-02-17 长鑫存储技术有限公司 一种半导体制程的材料残余状态检测方法
CN121018396B (zh) * 2025-10-22 2026-03-10 合肥晶合集成电路股份有限公司 研磨的控制方法、研磨的控制系统及研磨方法

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1466676A (zh) 2000-07-31 2004-01-07 Asml 在化学机械抛光中用于终点探测的现场方法和设备
US6929531B2 (en) * 2002-09-19 2005-08-16 Lam Research Corporation System and method for metal residue detection and mapping within a multi-step sequence
US7063597B2 (en) 2002-10-25 2006-06-20 Applied Materials Polishing processes for shallow trench isolation substrates
EP1758711B1 (en) * 2004-06-21 2013-08-07 Ebara Corporation Polishing apparatus and polishing method
US7084064B2 (en) 2004-09-14 2006-08-01 Applied Materials, Inc. Full sequence metal and barrier layer electrochemical mechanical processing
US8392012B2 (en) 2008-10-27 2013-03-05 Applied Materials, Inc. Multiple libraries for spectrographic monitoring of zones of a substrate during processing
KR101324644B1 (ko) * 2005-08-22 2013-11-01 어플라이드 머티어리얼스, 인코포레이티드 화학적 기계적 폴리싱의 스펙트럼 기반 모니터링을 위한 장치 및 방법
US20070108066A1 (en) * 2005-10-28 2007-05-17 Applied Materials, Inc. Voltage mode current control
US20070158201A1 (en) 2006-01-06 2007-07-12 Applied Materials, Inc. Electrochemical processing with dynamic process control
TWI286094B (en) * 2006-05-18 2007-09-01 United Microelectronics Corp Method for in-line controlling hybrid chemical mechanical polishing process
KR101278236B1 (ko) * 2006-09-12 2013-06-24 가부시키가이샤 에바라 세이사꾸쇼 연마장치 및 연마방법
US8369978B2 (en) * 2008-09-04 2013-02-05 Applied Materials Adjusting polishing rates by using spectrographic monitoring of a substrate during processing
US8039397B2 (en) 2008-11-26 2011-10-18 Applied Materials, Inc. Using optical metrology for within wafer feed forward process control
US9579767B2 (en) 2010-04-28 2017-02-28 Applied Materials, Inc. Automatic generation of reference spectra for optical monitoring of substrates
US8190285B2 (en) * 2010-05-17 2012-05-29 Applied Materials, Inc. Feedback for polishing rate correction in chemical mechanical polishing
US8616935B2 (en) * 2010-06-02 2013-12-31 Applied Materials, Inc. Control of overpolishing of multiple substrates on the same platen in chemical mechanical polishing
US20120034844A1 (en) 2010-08-05 2012-02-09 Applied Materials, Inc. Spectrographic monitoring using index tracking after detection of layer clearing
TW201223702A (en) * 2010-08-06 2012-06-16 Applied Materials Inc Techniques for matching measured spectra to reference spectra for in-situ optical monitoring
TW201223703A (en) * 2010-09-01 2012-06-16 Applied Materials Inc Feedback control of polishing using optical detection of clearance
US20120276817A1 (en) * 2011-04-27 2012-11-01 Iravani Hassan G Eddy current monitoring of metal residue or metal pillars
JP6050571B2 (ja) * 2011-08-09 2016-12-21 株式会社荏原製作所 研磨監視方法および研磨装置
US9095952B2 (en) * 2013-01-23 2015-08-04 Applied Materials, Inc. Reflectivity measurements during polishing using a camera

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