KR101699197B1 - 인-시튜 프로파일 제어(ｉｓｐｃ)를 이용한 동적 잔류물 클리어링 제어 - Google Patents

인-시튜 프로파일 제어(ｉｓｐｃ)를 이용한 동적 잔류물 클리어링 제어 Download PDF

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KR101699197B1
KR101699197B1 KR1020157029826A KR20157029826A KR101699197B1 KR 101699197 B1 KR101699197 B1 KR 101699197B1 KR 1020157029826 A KR1020157029826 A KR 1020157029826A KR 20157029826 A KR20157029826 A KR 20157029826A KR 101699197 B1 KR101699197 B1 KR 101699197B1
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polishing
substrate
zone
zones
time
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KR20150132524A (ko
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준 치안
시바쿠마르 단다파니
벤자민 체리안
토마스 에이치. 오스테르헬드
찰스 씨. 가렛슨
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어플라이드 머티어리얼스, 인코포레이티드
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B35/00—Machines or devices designed for superfinishing surfaces on work, i.e. by means of abrading blocks reciprocating with high frequency
    • B24B35/005—Machines or devices designed for superfinishing surfaces on work, i.e. by means of abrading blocks reciprocating with high frequency for making three-dimensional objects
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/005—Control means for lapping machines or devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions

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  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Manufacturing & Machinery (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
KR1020157029826A 2013-03-15 2014-02-20 인-시튜 프로파일 제어(ｉｓｐｃ)를 이용한 동적 잔류물 클리어링 제어 Active KR101699197B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201361787221P 2013-03-15 2013-03-15
US61/787,221 2013-03-15
PCT/US2014/017277 WO2014149330A1 (en) 2013-03-15 2014-02-20 Dynamic residue clearing control with in-situ profile control (ispc)

Publications (2)

Publication Number Publication Date
KR20150132524A KR20150132524A (ko) 2015-11-25
KR101699197B1 true KR101699197B1 (ko) 2017-01-23

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KR1020157029826A Active KR101699197B1 (ko) 2013-03-15 2014-02-20 인-시튜 프로파일 제어(ｉｓｐｃ)를 이용한 동적 잔류물 클리어링 제어

Country Status (5)

Country Link
US (1) US9242337B2 (enExample)
JP (1) JP6060308B2 (enExample)
KR (1) KR101699197B1 (enExample)
TW (1) TWI564946B (enExample)
WO (1) WO2014149330A1 (enExample)

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US9248544B2 (en) * 2012-07-18 2016-02-02 Applied Materials, Inc. Endpoint detection during polishing using integrated differential intensity
JP6447472B2 (ja) 2015-11-26 2019-01-09 株式会社Sumco ウェーハ研磨方法
JP6406238B2 (ja) * 2015-12-18 2018-10-17 株式会社Sumco ウェーハ研磨方法および研磨装置
US10562148B2 (en) 2016-10-10 2020-02-18 Applied Materials, Inc. Real time profile control for chemical mechanical polishing
JP7140760B2 (ja) * 2016-10-21 2022-09-21 アプライド マテリアルズ インコーポレイテッド インシトゥ電磁誘導モニタシステムのコア構成
KR102525737B1 (ko) * 2016-11-16 2023-04-26 주식회사 케이씨텍 화학 기계적 연마장치 및 그 제어방법
US11989492B2 (en) * 2018-12-26 2024-05-21 Applied Materials, Inc. Preston matrix generator
US11850698B2 (en) * 2019-01-31 2023-12-26 The Hillman Group, Inc. Automatic knife sharpening machine with sharpness detection
JP7446714B2 (ja) * 2019-02-01 2024-03-11 株式会社荏原製作所 基板処理装置、および基板処理方法
JP7361637B2 (ja) * 2020-03-09 2023-10-16 株式会社荏原製作所 研磨方法、研磨装置、およびプログラムを記録したコンピュータ読み取り可能な記録媒体
TWI810069B (zh) * 2020-06-08 2023-07-21 美商應用材料股份有限公司 用於在拋光相鄰導電層的堆疊期間的輪廓控制的系統、方法及電腦程式產品
JP7560320B2 (ja) * 2020-10-29 2024-10-02 株式会社ディスコ ウェーハの研削方法
US11931853B2 (en) 2021-03-05 2024-03-19 Applied Materials, Inc. Control of processing parameters for substrate polishing with angularly distributed zones using cost function

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AU2001279126A1 (en) 2000-07-31 2002-02-13 Silicon Valley Group Inc In-situ method and apparatus for end point detection in chemical mechanical polishing
US6929531B2 (en) * 2002-09-19 2005-08-16 Lam Research Corporation System and method for metal residue detection and mapping within a multi-step sequence
US7063597B2 (en) 2002-10-25 2006-06-20 Applied Materials Polishing processes for shallow trench isolation substrates
WO2005123335A1 (en) * 2004-06-21 2005-12-29 Ebara Corporation Polishing apparatus and polishing method
US7084064B2 (en) 2004-09-14 2006-08-01 Applied Materials, Inc. Full sequence metal and barrier layer electrochemical mechanical processing
JP5534672B2 (ja) * 2005-08-22 2014-07-02 アプライド マテリアルズ インコーポレイテッド 化学機械的研磨のスペクトルに基づく監視のための装置および方法
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JP5675617B2 (ja) * 2008-09-04 2015-02-25 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 加工時における基板の分光モニタリングを使用した研磨速度の調整
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Also Published As

Publication number Publication date
JP6060308B2 (ja) 2017-01-11
TWI564946B (zh) 2017-01-01
US9242337B2 (en) 2016-01-26
US20140273749A1 (en) 2014-09-18
JP2016510953A (ja) 2016-04-11
KR20150132524A (ko) 2015-11-25
WO2014149330A1 (en) 2014-09-25
TW201503244A (zh) 2015-01-16

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