TWI564946B - 利用原位輪廓控制（ｉｓｐｃ）之動態殘留物清除控制法 - Google Patents
利用原位輪廓控制（ｉｓｐｃ）之動態殘留物清除控制法 Download PDFInfo
- Publication number
- TWI564946B TWI564946B TW103107921A TW103107921A TWI564946B TW I564946 B TWI564946 B TW I564946B TW 103107921 A TW103107921 A TW 103107921A TW 103107921 A TW103107921 A TW 103107921A TW I564946 B TWI564946 B TW I564946B
- Authority
- TW
- Taiwan
- Prior art keywords
- substrate
- region
- regions
- grinding
- index value
- Prior art date
Links
- 238000011065 in-situ storage Methods 0.000 title claims description 14
- 239000000758 substrate Substances 0.000 claims description 358
- 238000000227 grinding Methods 0.000 claims description 173
- 238000001228 spectrum Methods 0.000 claims description 169
- 238000005498 polishing Methods 0.000 claims description 150
- 238000000034 method Methods 0.000 claims description 127
- 230000008569 process Effects 0.000 claims description 71
- 238000012886 linear function Methods 0.000 claims description 68
- 238000012544 monitoring process Methods 0.000 claims description 52
- 239000000463 material Substances 0.000 claims description 38
- 230000003287 optical effect Effects 0.000 claims description 38
- 238000007517 polishing process Methods 0.000 claims description 38
- 230000003595 spectral effect Effects 0.000 claims description 23
- 238000010926 purge Methods 0.000 claims description 17
- 239000013590 bulk material Substances 0.000 claims description 15
- 238000004364 calculation method Methods 0.000 claims description 7
- 230000006870 function Effects 0.000 claims description 7
- 238000012986 modification Methods 0.000 claims description 3
- 230000004048 modification Effects 0.000 claims description 3
- 238000011068 loading method Methods 0.000 claims description 2
- 238000004611 spectroscopical analysis Methods 0.000 claims 1
- 239000010410 layer Substances 0.000 description 53
- 238000005259 measurement Methods 0.000 description 15
- 235000012431 wafers Nutrition 0.000 description 13
- 239000002002 slurry Substances 0.000 description 11
- 238000010586 diagram Methods 0.000 description 9
- 238000001514 detection method Methods 0.000 description 8
- 238000004140 cleaning Methods 0.000 description 7
- 238000004590 computer program Methods 0.000 description 7
- 239000007787 solid Substances 0.000 description 7
- 239000000126 substance Substances 0.000 description 7
- 239000000203 mixture Substances 0.000 description 6
- 230000008859 change Effects 0.000 description 5
- 238000000151 deposition Methods 0.000 description 5
- 239000003989 dielectric material Substances 0.000 description 5
- 239000000835 fiber Substances 0.000 description 5
- 239000000945 filler Substances 0.000 description 5
- 238000012545 processing Methods 0.000 description 5
- 238000012360 testing method Methods 0.000 description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- 238000005070 sampling Methods 0.000 description 4
- 230000004888 barrier function Effects 0.000 description 3
- 238000004422 calculation algorithm Methods 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 238000012937 correction Methods 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 238000011010 flushing procedure Methods 0.000 description 3
- 238000002955 isolation Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000003801 milling Methods 0.000 description 3
- 238000012876 topography Methods 0.000 description 3
- 101100119135 Mus musculus Esrrb gene Proteins 0.000 description 2
- 101150107278 POLD1 gene Proteins 0.000 description 2
- 101150043219 POLD2 gene Proteins 0.000 description 2
- 239000003082 abrasive agent Substances 0.000 description 2
- 230000006978 adaptation Effects 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 229910000449 hafnium oxide Inorganic materials 0.000 description 2
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 2
- 238000012625 in-situ measurement Methods 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 238000004886 process control Methods 0.000 description 2
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 230000003442 weekly effect Effects 0.000 description 2
- 238000012935 Averaging Methods 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 239000012790 adhesive layer Substances 0.000 description 1
- 230000000712 assembly Effects 0.000 description 1
- 238000000429 assembly Methods 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 238000012512 characterization method Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 239000011231 conductive filler Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000002355 dual-layer Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000008713 feedback mechanism Effects 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- VSQYNPJPULBZKU-UHFFFAOYSA-N mercury xenon Chemical compound [Xe].[Hg] VSQYNPJPULBZKU-UHFFFAOYSA-N 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 239000004814 polyurethane Substances 0.000 description 1
- 229920002635 polyurethane Polymers 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000007779 soft material Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 229910001936 tantalum oxide Inorganic materials 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000009827 uniform distribution Methods 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical group [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B35/00—Machines or devices designed for superfinishing surfaces on work, i.e. by means of abrading blocks reciprocating with high frequency
- B24B35/005—Machines or devices designed for superfinishing surfaces on work, i.e. by means of abrading blocks reciprocating with high frequency for making three-dimensional objects
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/005—Control means for lapping machines or devices
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Manufacturing & Machinery (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201361787221P | 2013-03-15 | 2013-03-15 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201503244A TW201503244A (zh) | 2015-01-16 |
| TWI564946B true TWI564946B (zh) | 2017-01-01 |
Family
ID=51529181
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW103107921A TWI564946B (zh) | 2013-03-15 | 2014-03-07 | 利用原位輪廓控制（ｉｓｐｃ）之動態殘留物清除控制法 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US9242337B2 (enExample) |
| JP (1) | JP6060308B2 (enExample) |
| KR (1) | KR101699197B1 (enExample) |
| TW (1) | TWI564946B (enExample) |
| WO (1) | WO2014149330A1 (enExample) |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9248544B2 (en) * | 2012-07-18 | 2016-02-02 | Applied Materials, Inc. | Endpoint detection during polishing using integrated differential intensity |
| JP6447472B2 (ja) | 2015-11-26 | 2019-01-09 | 株式会社Sumco | ウェーハ研磨方法 |
| JP6406238B2 (ja) * | 2015-12-18 | 2018-10-17 | 株式会社Sumco | ウェーハ研磨方法および研磨装置 |
| US10562148B2 (en) | 2016-10-10 | 2020-02-18 | Applied Materials, Inc. | Real time profile control for chemical mechanical polishing |
| JP7140760B2 (ja) * | 2016-10-21 | 2022-09-21 | アプライド マテリアルズ インコーポレイテッド | インシトゥ電磁誘導モニタシステムのコア構成 |
| KR102525737B1 (ko) * | 2016-11-16 | 2023-04-26 | 주식회사 케이씨텍 | 화학 기계적 연마장치 및 그 제어방법 |
| US11989492B2 (en) * | 2018-12-26 | 2024-05-21 | Applied Materials, Inc. | Preston matrix generator |
| US11850698B2 (en) * | 2019-01-31 | 2023-12-26 | The Hillman Group, Inc. | Automatic knife sharpening machine with sharpness detection |
| JP7446714B2 (ja) * | 2019-02-01 | 2024-03-11 | 株式会社荏原製作所 | 基板処理装置、および基板処理方法 |
| JP7361637B2 (ja) * | 2020-03-09 | 2023-10-16 | 株式会社荏原製作所 | 研磨方法、研磨装置、およびプログラムを記録したコンピュータ読み取り可能な記録媒体 |
| TWI810069B (zh) * | 2020-06-08 | 2023-07-21 | 美商應用材料股份有限公司 | 用於在拋光相鄰導電層的堆疊期間的輪廓控制的系統、方法及電腦程式產品 |
| JP7560320B2 (ja) * | 2020-10-29 | 2024-10-02 | 株式会社ディスコ | ウェーハの研削方法 |
| US11931853B2 (en) | 2021-03-05 | 2024-03-19 | Applied Materials, Inc. | Control of processing parameters for substrate polishing with angularly distributed zones using cost function |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW200743550A (en) * | 2006-05-18 | 2007-12-01 | United Microelectronics Corp | Method for in-line controlling hybrid chemical mechanical polishing process |
| TW201103085A (en) * | 2005-08-22 | 2011-01-16 | Applied Materials Inc | Apparatus and methods for spectrum based monitoring of chemical mechanical polishing |
| TW201210742A (en) * | 2010-05-17 | 2012-03-16 | Applied Materials Inc | Feedback for polishing rate correction in chemical mechanical polishing |
| TW201223703A (en) * | 2010-09-01 | 2012-06-16 | Applied Materials Inc | Feedback control of polishing using optical detection of clearance |
Family Cites Families (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| AU2001279126A1 (en) | 2000-07-31 | 2002-02-13 | Silicon Valley Group Inc | In-situ method and apparatus for end point detection in chemical mechanical polishing |
| US6929531B2 (en) * | 2002-09-19 | 2005-08-16 | Lam Research Corporation | System and method for metal residue detection and mapping within a multi-step sequence |
| US7063597B2 (en) | 2002-10-25 | 2006-06-20 | Applied Materials | Polishing processes for shallow trench isolation substrates |
| WO2005123335A1 (en) * | 2004-06-21 | 2005-12-29 | Ebara Corporation | Polishing apparatus and polishing method |
| US7084064B2 (en) | 2004-09-14 | 2006-08-01 | Applied Materials, Inc. | Full sequence metal and barrier layer electrochemical mechanical processing |
| US8392012B2 (en) * | 2008-10-27 | 2013-03-05 | Applied Materials, Inc. | Multiple libraries for spectrographic monitoring of zones of a substrate during processing |
| US20070108066A1 (en) * | 2005-10-28 | 2007-05-17 | Applied Materials, Inc. | Voltage mode current control |
| US20070158201A1 (en) | 2006-01-06 | 2007-07-12 | Applied Materials, Inc. | Electrochemical processing with dynamic process control |
| KR101278236B1 (ko) * | 2006-09-12 | 2013-06-24 | 가부시키가이샤 에바라 세이사꾸쇼 | 연마장치 및 연마방법 |
| JP5675617B2 (ja) * | 2008-09-04 | 2015-02-25 | アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ | 加工時における基板の分光モニタリングを使用した研磨速度の調整 |
| US8579675B2 (en) | 2008-11-26 | 2013-11-12 | Applied Materials, Inc. | Methods of using optical metrology for feed back and feed forward process control |
| US9579767B2 (en) | 2010-04-28 | 2017-02-28 | Applied Materials, Inc. | Automatic generation of reference spectra for optical monitoring of substrates |
| US8616935B2 (en) * | 2010-06-02 | 2013-12-31 | Applied Materials, Inc. | Control of overpolishing of multiple substrates on the same platen in chemical mechanical polishing |
| US20120034844A1 (en) | 2010-08-05 | 2012-02-09 | Applied Materials, Inc. | Spectrographic monitoring using index tracking after detection of layer clearing |
| TW201223702A (en) | 2010-08-06 | 2012-06-16 | Applied Materials Inc | Techniques for matching measured spectra to reference spectra for in-situ optical monitoring |
| US20120276817A1 (en) * | 2011-04-27 | 2012-11-01 | Iravani Hassan G | Eddy current monitoring of metal residue or metal pillars |
| JP6050571B2 (ja) | 2011-08-09 | 2016-12-21 | 株式会社荏原製作所 | 研磨監視方法および研磨装置 |
| US9095952B2 (en) * | 2013-01-23 | 2015-08-04 | Applied Materials, Inc. | Reflectivity measurements during polishing using a camera |
-
2014
- 2014-02-20 WO PCT/US2014/017277 patent/WO2014149330A1/en not_active Ceased
- 2014-02-20 US US14/185,185 patent/US9242337B2/en active Active
- 2014-02-20 KR KR1020157029826A patent/KR101699197B1/ko active Active
- 2014-02-20 JP JP2016500309A patent/JP6060308B2/ja active Active
- 2014-03-07 TW TW103107921A patent/TWI564946B/zh active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW201103085A (en) * | 2005-08-22 | 2011-01-16 | Applied Materials Inc | Apparatus and methods for spectrum based monitoring of chemical mechanical polishing |
| TW200743550A (en) * | 2006-05-18 | 2007-12-01 | United Microelectronics Corp | Method for in-line controlling hybrid chemical mechanical polishing process |
| TW201210742A (en) * | 2010-05-17 | 2012-03-16 | Applied Materials Inc | Feedback for polishing rate correction in chemical mechanical polishing |
| TW201223703A (en) * | 2010-09-01 | 2012-06-16 | Applied Materials Inc | Feedback control of polishing using optical detection of clearance |
Also Published As
| Publication number | Publication date |
|---|---|
| KR101699197B1 (ko) | 2017-01-23 |
| JP6060308B2 (ja) | 2017-01-11 |
| US9242337B2 (en) | 2016-01-26 |
| US20140273749A1 (en) | 2014-09-18 |
| JP2016510953A (ja) | 2016-04-11 |
| KR20150132524A (ko) | 2015-11-25 |
| WO2014149330A1 (en) | 2014-09-25 |
| TW201503244A (zh) | 2015-01-16 |
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