TWI478259B - 用於終點偵測之二維光譜特徵追蹤 - Google Patents
用於終點偵測之二維光譜特徵追蹤 Download PDFInfo
- Publication number
- TWI478259B TWI478259B TW100123536A TW100123536A TWI478259B TW I478259 B TWI478259 B TW I478259B TW 100123536 A TW100123536 A TW 100123536A TW 100123536 A TW100123536 A TW 100123536A TW I478259 B TWI478259 B TW I478259B
- Authority
- TW
- Taiwan
- Prior art keywords
- substrate
- layer
- spectral
- grinding
- spectrum
- Prior art date
Links
- 238000001228 spectrum Methods 0.000 title claims description 178
- 238000001514 detection method Methods 0.000 title description 12
- 239000000758 substrate Substances 0.000 claims description 291
- 230000003595 spectral effect Effects 0.000 claims description 142
- 238000005498 polishing Methods 0.000 claims description 138
- 238000000227 grinding Methods 0.000 claims description 117
- 238000000034 method Methods 0.000 claims description 61
- 239000000463 material Substances 0.000 claims description 57
- 238000005259 measurement Methods 0.000 claims description 49
- 238000012544 monitoring process Methods 0.000 claims description 41
- 238000011065 in-situ storage Methods 0.000 claims description 19
- 238000012935 Averaging Methods 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 182
- 230000006870 function Effects 0.000 description 43
- 230000008859 change Effects 0.000 description 42
- 230000003287 optical effect Effects 0.000 description 41
- 239000000835 fiber Substances 0.000 description 28
- 238000003801 milling Methods 0.000 description 15
- 239000010408 film Substances 0.000 description 12
- 238000012545 processing Methods 0.000 description 10
- 230000008569 process Effects 0.000 description 9
- 239000002002 slurry Substances 0.000 description 9
- 239000007787 solid Substances 0.000 description 9
- 238000012360 testing method Methods 0.000 description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- 238000007517 polishing process Methods 0.000 description 8
- 230000004888 barrier function Effects 0.000 description 7
- 238000004590 computer program Methods 0.000 description 7
- 239000003989 dielectric material Substances 0.000 description 7
- 238000012886 linear function Methods 0.000 description 7
- 238000010586 diagram Methods 0.000 description 6
- 235000012431 wafers Nutrition 0.000 description 6
- 230000000875 corresponding effect Effects 0.000 description 5
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- 239000000945 filler Substances 0.000 description 5
- 238000012625 in-situ measurement Methods 0.000 description 5
- 239000007788 liquid Substances 0.000 description 5
- 235000012239 silicon dioxide Nutrition 0.000 description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 4
- 238000004422 calculation algorithm Methods 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 238000000151 deposition Methods 0.000 description 4
- 238000003754 machining Methods 0.000 description 4
- 238000000691 measurement method Methods 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 229920002635 polyurethane Polymers 0.000 description 4
- 239000004814 polyurethane Substances 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 238000004364 calculation method Methods 0.000 description 3
- 239000010432 diamond Substances 0.000 description 3
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 150000004767 nitrides Chemical class 0.000 description 3
- 239000004033 plastic Substances 0.000 description 3
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- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 3
- WJMXTYZCTXTFJM-UHFFFAOYSA-N 1,1,1,2-tetraethoxydecane Chemical compound C(C)OC(C(OCC)(OCC)OCC)CCCCCCCC WJMXTYZCTXTFJM-UHFFFAOYSA-N 0.000 description 2
- 239000003082 abrasive agent Substances 0.000 description 2
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- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
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- 238000004891 communication Methods 0.000 description 1
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- 238000005520 cutting process Methods 0.000 description 1
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- 210000003298 dental enamel Anatomy 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229920002313 fluoropolymer Polymers 0.000 description 1
- 239000004811 fluoropolymer Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 238000010606 normalization Methods 0.000 description 1
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- 229910052707 ruthenium Inorganic materials 0.000 description 1
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- 230000002393 scratching effect Effects 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 229920002050 silicone resin Polymers 0.000 description 1
- 239000007779 soft material Substances 0.000 description 1
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- 239000010409 thin film Substances 0.000 description 1
- 230000001052 transient effect Effects 0.000 description 1
- 238000007514 turning Methods 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/005—Control means for lapping machines or devices
- B24B37/013—Devices or means for detecting lapping completion
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
- B24B49/12—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation involving optical means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Constituent Portions Of Griding Lathes, Driving, Sensing And Control (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US36712510P | 2010-07-23 | 2010-07-23 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201220415A TW201220415A (en) | 2012-05-16 |
| TWI478259B true TWI478259B (zh) | 2015-03-21 |
Family
ID=45494016
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW100123536A TWI478259B (zh) | 2010-07-23 | 2011-07-04 | 用於終點偵測之二維光譜特徵追蹤 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US8814631B2 (enExample) |
| JP (1) | JP2013541827A (enExample) |
| KR (1) | KR101484696B1 (enExample) |
| TW (1) | TWI478259B (enExample) |
| WO (1) | WO2012012530A2 (enExample) |
Families Citing this family (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8747189B2 (en) * | 2011-04-26 | 2014-06-10 | Applied Materials, Inc. | Method of controlling polishing |
| US8657646B2 (en) * | 2011-05-09 | 2014-02-25 | Applied Materials, Inc. | Endpoint detection using spectrum feature trajectories |
| US8563335B1 (en) * | 2012-04-23 | 2013-10-22 | Applied Materials, Inc. | Method of controlling polishing using in-situ optical monitoring and fourier transform |
| US9248544B2 (en) | 2012-07-18 | 2016-02-02 | Applied Materials, Inc. | Endpoint detection during polishing using integrated differential intensity |
| CN103624673B (zh) * | 2012-08-21 | 2016-04-20 | 中芯国际集成电路制造(上海)有限公司 | 化学机械抛光装置及化学机械抛光的方法 |
| US9221147B2 (en) * | 2012-10-23 | 2015-12-29 | Applied Materials, Inc. | Endpointing with selective spectral monitoring |
| TWI635929B (zh) * | 2013-07-11 | 2018-09-21 | 日商荏原製作所股份有限公司 | 研磨裝置及研磨狀態監視方法 |
| JP6033751B2 (ja) * | 2013-10-07 | 2016-11-30 | 株式会社荏原製作所 | 研磨方法 |
| WO2015163164A1 (ja) * | 2014-04-22 | 2015-10-29 | 株式会社 荏原製作所 | 研磨方法および研磨装置 |
| US9352440B2 (en) * | 2014-04-30 | 2016-05-31 | Applied Materials, Inc. | Serial feature tracking for endpoint detection |
| TWI784719B (zh) | 2016-08-26 | 2022-11-21 | 美商應用材料股份有限公司 | 獲得代表在基板上的層的厚度的測量的方法,及量測系統和電腦程式產品 |
| CN109791881B (zh) * | 2016-09-21 | 2021-02-19 | 应用材料公司 | 具有补偿滤波的端点检测 |
| JP6989317B2 (ja) | 2017-08-04 | 2022-01-05 | キオクシア株式会社 | 研磨装置、研磨方法、およびプログラム |
| US12236573B2 (en) * | 2020-12-03 | 2025-02-25 | Battelle Memorial Institute | Optical end-pointing for integrated circuit delayering; systems and methods using the same |
| US12288724B2 (en) | 2021-03-04 | 2025-04-29 | Applied Materials, Inc. | Region classification of film non-uniformity based on processing of substrate images |
| US20240189958A1 (en) * | 2022-12-07 | 2024-06-13 | Illinois Tool Works Inc. | Systems and methods to detect rotation of a vibratory polisher |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6191864B1 (en) * | 1996-05-16 | 2001-02-20 | Micron Technology, Inc. | Method and apparatus for detecting the endpoint in chemical-mechanical polishing of semiconductor wafers |
| US6618130B2 (en) * | 2001-08-28 | 2003-09-09 | Speedfam-Ipec Corporation | Method and apparatus for optical endpoint detection during chemical mechanical polishing |
| US20050026542A1 (en) * | 2003-07-31 | 2005-02-03 | Tezer Battal | Detection system for chemical-mechanical planarization tool |
| US20070042675A1 (en) * | 2005-08-22 | 2007-02-22 | Applied Materials, Inc. | Spectrum based endpointing for chemical mechanical polishing |
| US20080099443A1 (en) * | 2006-10-31 | 2008-05-01 | Applied Materials, Inc. | Peak-based endpointing for chemical mechanical polishing |
| US20100093260A1 (en) * | 2008-10-10 | 2010-04-15 | Ebara Corporation | Method of making diagram for use in selection of wavelength of light for polishing endpoint detection, method and apparatus for selecting wavelength of light for polishing endpoint detection, polishing endpoint detection method, polishing endpoint detection apparatus, and polishing monitoring method |
| US20100124870A1 (en) * | 2008-11-14 | 2010-05-20 | Applied Materials, Inc. | Semi-Quantitative Thickness Determination |
Family Cites Families (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6383058B1 (en) * | 2000-01-28 | 2002-05-07 | Applied Materials, Inc. | Adaptive endpoint detection for chemical mechanical polishing |
| JP2001287159A (ja) * | 2000-04-05 | 2001-10-16 | Nikon Corp | 表面状態測定方法及び測定装置及び研磨装置及び半導体デバイス製造方法 |
| US6605405B2 (en) | 2000-07-26 | 2003-08-12 | Canon Kabushiki Kaisha | Electrophotographic method and electrophotographic apparatus |
| JP3946470B2 (ja) * | 2001-03-12 | 2007-07-18 | 株式会社デンソー | 半導体層の膜厚測定方法及び半導体基板の製造方法 |
| JP2002359217A (ja) | 2001-05-31 | 2002-12-13 | Omron Corp | 研磨終点検出方法およびその装置 |
| JP5534672B2 (ja) * | 2005-08-22 | 2014-07-02 | アプライド マテリアルズ インコーポレイテッド | 化学機械的研磨のスペクトルに基づく監視のための装置および方法 |
| JP5274105B2 (ja) * | 2008-05-26 | 2013-08-28 | 株式会社東京精密 | 研磨終点検出方法 |
| JP2010093147A (ja) * | 2008-10-10 | 2010-04-22 | Ebara Corp | 研磨進捗監視方法および研磨装置 |
| JP4739393B2 (ja) * | 2008-11-11 | 2011-08-03 | 株式会社荏原製作所 | 研磨終点検知用の光の波長選択に用いられるダイヤグラムの作成方法、光の波長選択方法、研磨終点検出方法、研磨終点検出装置、および研磨装置 |
| WO2011056485A2 (en) | 2009-11-03 | 2011-05-12 | Applied Materials, Inc. | Endpoint method using peak location of spectra contour plots versus time |
| US8834229B2 (en) | 2010-05-05 | 2014-09-16 | Applied Materials, Inc. | Dynamically tracking spectrum features for endpoint detection |
| US8930013B2 (en) | 2010-06-28 | 2015-01-06 | Applied Materials, Inc. | Adaptively tracking spectrum features for endpoint detection |
| JP5612945B2 (ja) * | 2010-07-23 | 2014-10-22 | 株式会社荏原製作所 | 基板の研磨の進捗を監視する方法および研磨装置 |
| US8535115B2 (en) * | 2011-01-28 | 2013-09-17 | Applied Materials, Inc. | Gathering spectra from multiple optical heads |
| US8657646B2 (en) * | 2011-05-09 | 2014-02-25 | Applied Materials, Inc. | Endpoint detection using spectrum feature trajectories |
| WO2013028389A1 (en) * | 2011-08-23 | 2013-02-28 | Applied Materials, Inc. | Optical detection of metal layer clearance |
| US9168630B2 (en) * | 2012-04-23 | 2015-10-27 | Applied Materials, Inc. | User-input functions for data sequences in polishing endpoint detection |
| US9289875B2 (en) * | 2012-04-25 | 2016-03-22 | Applied Materials, Inc. | Feed forward and feed-back techniques for in-situ process control |
-
2011
- 2011-07-04 TW TW100123536A patent/TWI478259B/zh active
- 2011-07-20 WO PCT/US2011/044680 patent/WO2012012530A2/en not_active Ceased
- 2011-07-20 US US13/187,220 patent/US8814631B2/en active Active
- 2011-07-20 KR KR1020137004558A patent/KR101484696B1/ko active Active
- 2011-07-20 JP JP2013521826A patent/JP2013541827A/ja active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6191864B1 (en) * | 1996-05-16 | 2001-02-20 | Micron Technology, Inc. | Method and apparatus for detecting the endpoint in chemical-mechanical polishing of semiconductor wafers |
| US6618130B2 (en) * | 2001-08-28 | 2003-09-09 | Speedfam-Ipec Corporation | Method and apparatus for optical endpoint detection during chemical mechanical polishing |
| US20050026542A1 (en) * | 2003-07-31 | 2005-02-03 | Tezer Battal | Detection system for chemical-mechanical planarization tool |
| US20070042675A1 (en) * | 2005-08-22 | 2007-02-22 | Applied Materials, Inc. | Spectrum based endpointing for chemical mechanical polishing |
| US20080099443A1 (en) * | 2006-10-31 | 2008-05-01 | Applied Materials, Inc. | Peak-based endpointing for chemical mechanical polishing |
| US20100093260A1 (en) * | 2008-10-10 | 2010-04-15 | Ebara Corporation | Method of making diagram for use in selection of wavelength of light for polishing endpoint detection, method and apparatus for selecting wavelength of light for polishing endpoint detection, polishing endpoint detection method, polishing endpoint detection apparatus, and polishing monitoring method |
| US20100124870A1 (en) * | 2008-11-14 | 2010-05-20 | Applied Materials, Inc. | Semi-Quantitative Thickness Determination |
Also Published As
| Publication number | Publication date |
|---|---|
| TW201220415A (en) | 2012-05-16 |
| WO2012012530A2 (en) | 2012-01-26 |
| WO2012012530A3 (en) | 2013-08-01 |
| KR101484696B1 (ko) | 2015-01-21 |
| US20120021672A1 (en) | 2012-01-26 |
| KR20130093099A (ko) | 2013-08-21 |
| US8814631B2 (en) | 2014-08-26 |
| JP2013541827A (ja) | 2013-11-14 |
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