JP2013539420A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2013539420A5 JP2013539420A5 JP2013522283A JP2013522283A JP2013539420A5 JP 2013539420 A5 JP2013539420 A5 JP 2013539420A5 JP 2013522283 A JP2013522283 A JP 2013522283A JP 2013522283 A JP2013522283 A JP 2013522283A JP 2013539420 A5 JP2013539420 A5 JP 2013539420A5
- Authority
- JP
- Japan
- Prior art keywords
- block
- substrate
- bipyridine
- polymer
- maltoheptaose
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000463 material Substances 0.000 claims 19
- 239000000758 substrate Substances 0.000 claims 7
- 229920001400 block copolymer Polymers 0.000 claims 4
- MWVTWFVJZLCBMC-UHFFFAOYSA-N 4,4'-bipyridine Chemical compound C1=NC=CC(C=2C=CN=CC=2)=C1 MWVTWFVJZLCBMC-UHFFFAOYSA-N 0.000 claims 3
- BNABBHGYYMZMOA-AHIHXIOASA-N alpha-maltoheptaose Chemical compound O[C@@H]1[C@@H](O)[C@H](O)[C@@H](CO)O[C@@H]1O[C@@H]1[C@@H](CO)O[C@H](O[C@@H]2[C@H](O[C@H](O[C@@H]3[C@H](O[C@H](O[C@@H]4[C@H](O[C@H](O[C@@H]5[C@H](O[C@H](O[C@@H]6[C@H](O[C@H](O)[C@H](O)[C@H]6O)CO)[C@H](O)[C@H]5O)CO)[C@H](O)[C@H]4O)CO)[C@H](O)[C@H]3O)CO)[C@H](O)[C@H]2O)CO)[C@H](O)[C@H]1O BNABBHGYYMZMOA-AHIHXIOASA-N 0.000 claims 3
- 229920000642 polymer Polymers 0.000 claims 3
- SSABEFIRGJISFH-UHFFFAOYSA-N 2-(2,4-difluorophenyl)pyridine Chemical compound FC1=CC(F)=CC=C1C1=CC=CC=N1 SSABEFIRGJISFH-UHFFFAOYSA-N 0.000 claims 2
- ROFVEXUMMXZLPA-UHFFFAOYSA-N Bipyridyl Chemical compound N1=CC=CC=C1C1=CC=CC=N1 ROFVEXUMMXZLPA-UHFFFAOYSA-N 0.000 claims 2
- 239000004793 Polystyrene Substances 0.000 claims 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 2
- 150000001408 amides Chemical class 0.000 claims 2
- 150000001412 amines Chemical class 0.000 claims 2
- 150000001735 carboxylic acids Chemical group 0.000 claims 2
- 150000004676 glycans Chemical class 0.000 claims 2
- 229910052739 hydrogen Inorganic materials 0.000 claims 2
- 239000001257 hydrogen Substances 0.000 claims 2
- 238000004519 manufacturing process Methods 0.000 claims 2
- 238000000034 method Methods 0.000 claims 2
- 238000006116 polymerization reaction Methods 0.000 claims 2
- 229920001282 polysaccharide Polymers 0.000 claims 2
- 239000005017 polysaccharide Substances 0.000 claims 2
- 229920002223 polystyrene Polymers 0.000 claims 2
- 229910052710 silicon Inorganic materials 0.000 claims 2
- 239000010703 silicon Substances 0.000 claims 2
- CCFAKBRKTKVJPO-UHFFFAOYSA-N 1-anthroic acid Chemical compound C1=CC=C2C=C3C(C(=O)O)=CC=CC3=CC2=C1 CCFAKBRKTKVJPO-UHFFFAOYSA-N 0.000 claims 1
- XGWFJBFNAQHLEF-UHFFFAOYSA-N 9-anthroic acid Chemical compound C1=CC=C2C(C(=O)O)=C(C=CC=C3)C3=CC2=C1 XGWFJBFNAQHLEF-UHFFFAOYSA-N 0.000 claims 1
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 claims 1
- 238000000018 DNA microarray Methods 0.000 claims 1
- 125000000217 alkyl group Chemical group 0.000 claims 1
- 229920001577 copolymer Polymers 0.000 claims 1
- 238000000151 deposition Methods 0.000 claims 1
- 125000000524 functional group Chemical group 0.000 claims 1
- 239000011521 glass Substances 0.000 claims 1
- 238000010438 heat treatment Methods 0.000 claims 1
- 229920001600 hydrophobic polymer Polymers 0.000 claims 1
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims 1
- 238000001459 lithography Methods 0.000 claims 1
- 239000002184 metal Substances 0.000 claims 1
- 229910044991 metal oxide Inorganic materials 0.000 claims 1
- 150000004706 metal oxides Chemical class 0.000 claims 1
- 238000013086 organic photovoltaic Methods 0.000 claims 1
- 229920000301 poly(3-hexylthiophene-2,5-diyl) polymer Polymers 0.000 claims 1
- 239000002243 precursor Substances 0.000 claims 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR1056336 | 2010-07-30 | ||
| FR1056336A FR2963355B1 (fr) | 2010-07-30 | 2010-07-30 | Films minces nanoorganises a base de copolymeres a blocs polysaccharidiques pour des applications en nanotechnologie. |
| PCT/FR2011/051843 WO2012013911A1 (fr) | 2010-07-30 | 2011-07-29 | Films minces nanoorganisés à base de copolymères à blocs polysaccharidiques pour des applications en nanotechnologie |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2013539420A JP2013539420A (ja) | 2013-10-24 |
| JP2013539420A5 true JP2013539420A5 (enExample) | 2014-08-28 |
| JP6008854B2 JP6008854B2 (ja) | 2016-10-19 |
Family
ID=43501578
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2013522283A Active JP6008854B2 (ja) | 2010-07-30 | 2011-07-29 | ナノ技術的への応用のための、多糖ブロックを持つコポリマー系のナノ領域で組織化された膜 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US9377684B2 (enExample) |
| EP (1) | EP2599109B1 (enExample) |
| JP (1) | JP6008854B2 (enExample) |
| ES (1) | ES2561673T3 (enExample) |
| FR (1) | FR2963355B1 (enExample) |
| WO (1) | WO2012013911A1 (enExample) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10982032B2 (en) | 2015-12-25 | 2021-04-20 | Oji Holdings Corporation | Self-assembly composition for pattern formation and pattern forming method |
| TWI732825B (zh) * | 2016-05-20 | 2021-07-11 | 日商王子控股股份有限公司 | 圖案形成用定向自組裝組成物、圖案形成用定向自組裝組成物用單體及圖案形成方法 |
| JP2018046202A (ja) * | 2016-09-15 | 2018-03-22 | 東芝メモリ株式会社 | パターン形成方法、自己組織化材料、半導体装置の製造方法 |
| KR20190073382A (ko) * | 2016-10-28 | 2019-06-26 | 오지 홀딩스 가부시키가이샤 | 패턴 형성 방법, 하지제 및 적층체 |
| WO2019182978A1 (en) * | 2018-03-19 | 2019-09-26 | Virginia Polytechnic Institute And State University | Copolymer compatibilizers and uses thereof |
| CN114420787B (zh) * | 2021-12-22 | 2024-06-14 | 西安隆基乐叶光伏科技有限公司 | 一种太阳能电池退火方法及退火设备 |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0884769A (ja) | 1994-09-14 | 1996-04-02 | Case Western Reserve Univ | 非トロンボゲン形成インプラント表面 |
| US6794245B2 (en) | 2002-07-18 | 2004-09-21 | Micron Technology, Inc. | Methods of fabricating double-sided hemispherical silicon grain electrodes and capacitor modules |
| US7045851B2 (en) | 2003-06-20 | 2006-05-16 | International Business Machines Corporation | Nonvolatile memory device using semiconductor nanocrystals and method of forming same |
| US20070155907A1 (en) | 2005-12-30 | 2007-07-05 | Zhao Jonathon Z | Biologically active block copolymers |
| US7964107B2 (en) * | 2007-02-08 | 2011-06-21 | Micron Technology, Inc. | Methods using block copolymer self-assembly for sub-lithographic patterning |
| FR2927467B1 (fr) | 2008-02-08 | 2011-09-23 | Commissariat Energie Atomique | Procede de realisation d'une grille flottante ayant une alternance de lignes en premier et second materiaux |
| FR2932485A1 (fr) | 2008-06-12 | 2009-12-18 | Univ Pasteur | Polymere a liberation colique specifique quel que soit le ph |
| US20130022785A1 (en) * | 2011-06-21 | 2013-01-24 | Board of Regents, The University of the Texas System | Oligosaccharide/silicon-containing block copolymers for lithography applications |
-
2010
- 2010-07-30 FR FR1056336A patent/FR2963355B1/fr active Active
-
2011
- 2011-07-29 WO PCT/FR2011/051843 patent/WO2012013911A1/fr not_active Ceased
- 2011-07-29 JP JP2013522283A patent/JP6008854B2/ja active Active
- 2011-07-29 EP EP11755386.7A patent/EP2599109B1/fr active Active
- 2011-07-29 US US13/812,904 patent/US9377684B2/en active Active
- 2011-07-29 ES ES11755386.7T patent/ES2561673T3/es active Active
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2013539420A5 (enExample) | ||
| Alf et al. | Chemical vapor deposition of conformal, functional, and responsive polymer films | |
| Urien et al. | Poly (3-hexylthiophene) based block copolymers prepared by “click” chemistry | |
| CN102319662B (zh) | 一种基于层层组装技术制备自修复聚电解质涂层的方法 | |
| JP2011528383A5 (enExample) | ||
| JP2013524546A5 (enExample) | ||
| CN103392221B (zh) | 纳米压印用固化性组合物、纳米压印成形体以及图案形成方法 | |
| JP2011526631A5 (enExample) | ||
| Kong et al. | Nanoconfining optoelectronic materials for enhanced performance and stability | |
| Yin et al. | Roller‐assisted adhesion imprinting for high‐throughput manufacturing of wearable and stretchable organic light‐emitting devices | |
| JP2009135422A5 (enExample) | ||
| CN110300630A (zh) | 用于使用两亲性嵌段共聚物在固体支撑体上制造多层膜的方法 | |
| JP2008258609A5 (enExample) | ||
| JP2012518088A5 (enExample) | ||
| JP2011219719A (ja) | 光活性基を側鎖として有するはしご構造のポリシルセスキオキサン及びその製造方法 | |
| Wang et al. | Inkjet‐Printed Xerogel Scaffolds Enabled Room‐Temperature Fabrication of High‐Quality Metal Electrodes for Flexible Electronics | |
| CN104505148A (zh) | 一种柔性基三维共面形石墨烯薄膜的制备方法 | |
| JP2005136383A5 (enExample) | ||
| Kim et al. | Photoinduced high-quality ultrathin SiO2 film from hybrid nanosheet at room temperature | |
| CN105140393A (zh) | 一种复合膜结构聚合物柔性基板及其制作方法 | |
| JP6008854B2 (ja) | ナノ技術的への応用のための、多糖ブロックを持つコポリマー系のナノ領域で組織化された膜 | |
| CN105024016A (zh) | 一种柔性基板、柔性显示器及其制备方法 | |
| TW201205913A (en) | Organic semiconductor film and method for manufacturing the same, and stamp for contact printing | |
| CN100354049C (zh) | 固体材料超疏水表面的形成方法 | |
| CN104916371A (zh) | 一种通过改性透明基体制备透明导电薄膜的方法 |