JP2011528383A5 - - Google Patents

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Publication number
JP2011528383A5
JP2011528383A5 JP2011515441A JP2011515441A JP2011528383A5 JP 2011528383 A5 JP2011528383 A5 JP 2011528383A5 JP 2011515441 A JP2011515441 A JP 2011515441A JP 2011515441 A JP2011515441 A JP 2011515441A JP 2011528383 A5 JP2011528383 A5 JP 2011528383A5
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JP
Japan
Prior art keywords
thin film
film semiconductor
composite
substrate
solution
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JP2011515441A
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English (en)
Japanese (ja)
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JP5650108B2 (ja
JP2011528383A (ja
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Priority claimed from PCT/EP2009/058218 external-priority patent/WO2010000755A1/en
Publication of JP2011528383A publication Critical patent/JP2011528383A/ja
Publication of JP2011528383A5 publication Critical patent/JP2011528383A5/ja
Application granted granted Critical
Publication of JP5650108B2 publication Critical patent/JP5650108B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2011515441A 2008-07-02 2009-06-30 交互ドナーアクセプターコポリマー系の高性能で溶液加工可能な半導体ポリマー Expired - Fee Related JP5650108B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP08159534.0 2008-07-02
EP08159534 2008-07-02
PCT/EP2009/058218 WO2010000755A1 (en) 2008-07-02 2009-06-30 High performance solution processable semiconducting polymers based on alternat-ing donor acceptor copolymers

Publications (3)

Publication Number Publication Date
JP2011528383A JP2011528383A (ja) 2011-11-17
JP2011528383A5 true JP2011528383A5 (enExample) 2012-08-16
JP5650108B2 JP5650108B2 (ja) 2015-01-07

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ID=40933952

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2011515441A Expired - Fee Related JP5650108B2 (ja) 2008-07-02 2009-06-30 交互ドナーアクセプターコポリマー系の高性能で溶液加工可能な半導体ポリマー

Country Status (8)

Country Link
US (1) US20110101329A1 (enExample)
EP (1) EP2297223B1 (enExample)
JP (1) JP5650108B2 (enExample)
KR (1) KR101561322B1 (enExample)
CN (1) CN102083883B (enExample)
CA (1) CA2729714A1 (enExample)
TW (1) TWI523884B (enExample)
WO (1) WO2010000755A1 (enExample)

Families Citing this family (33)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102224611B (zh) 2008-11-24 2014-01-22 巴斯夫欧洲公司 可光固化聚合物电介质及其制备方法和用途
US9221944B2 (en) 2008-12-18 2015-12-29 Basf Se Semiconductor materials prepared from dithienylvinylene copolymers
KR20120005536A (ko) 2009-04-28 2012-01-16 바스프 에스이 반전도성 층을 제조하는 방법
US8343382B2 (en) * 2009-05-22 2013-01-01 The Regents Of The University Of California Band gap control in conjugated oligomers and polymers via Lewis acids
JP5782703B2 (ja) * 2009-10-29 2015-09-24 住友化学株式会社 高分子化合物及びそれを用いた電子素子
JP5847800B2 (ja) 2010-04-19 2016-01-27 メルク パテント ゲゼルシャフト ミット ベシュレンクテル ハフツングMerck Patent Gesellschaft mit beschraenkter Haftung ベンゾジチオフェンのポリマーおよび有機半導体としてのそれらの使用
JP5533258B2 (ja) * 2010-05-25 2014-06-25 富士ゼロックス株式会社 画像形成装置用像保持体、プロセスカートリッジ、及び画像形成装置
US8394918B2 (en) 2011-02-28 2013-03-12 Corning Incorporated Five-ring fused heteroaromatic compounds and conjugated polymers thereof
KR101282062B1 (ko) * 2011-04-21 2013-07-04 한국화학연구원 페릴렌 단위를 포함하는 반도체성 고분자
US8940411B2 (en) 2011-04-25 2015-01-27 General Electric Company Materials for optoelectronic devices
JP5751100B2 (ja) * 2011-09-05 2015-07-22 コニカミノルタ株式会社 色素増感型太陽電池及び製造方法
KR101259865B1 (ko) * 2011-11-21 2013-05-02 광주과학기술원 저밴드갭의 공중합체 및 이의 제조방법
CN103159918A (zh) * 2011-12-09 2013-06-19 海洋王照明科技股份有限公司 二噻吩蒽醌基共聚物太阳能电池材料及其制备方法和应用
EP2836533A1 (en) * 2012-04-13 2015-02-18 Wake Forest University Low band gap conjugated polymeric compositions and applications thereof
JP6057364B2 (ja) * 2012-04-26 2017-01-11 国立大学法人広島大学 ナフトビスチアジアゾール誘導体
JP6111552B2 (ja) * 2012-08-07 2017-04-12 株式会社リコー 光電変換素子、及び光電変換素子の製造方法
CN103833987B (zh) * 2012-11-27 2016-01-13 海洋王照明科技股份有限公司 环戊二烯二噻吩-噻咯并二(苯并噻二唑)共聚物及其制备方法和应用
CN103833977B (zh) * 2012-11-27 2016-01-27 海洋王照明科技股份有限公司 一种含苯并二噻吩-噻咯并二(苯并噻二唑)共聚物及其制备与应用
CN103833976B (zh) * 2012-11-27 2016-01-27 海洋王照明科技股份有限公司 一种含苯并噻吩-噻咯并二(苯并噻二唑)共聚物及其制备和应用
CN103848960A (zh) * 2012-11-28 2014-06-11 海洋王照明科技股份有限公司 含噻吩-苯-噻吩单元的聚合物及其制备方法和太阳能电池器件
GB201317966D0 (en) * 2013-10-10 2013-11-27 Univ Manchester Nanoparticles
JP6199992B2 (ja) * 2013-12-19 2017-09-20 リンテック株式会社 高分子化合物、有機光電変換素子、及び該素子の製造方法
JP6274417B2 (ja) * 2014-03-11 2018-02-07 国立大学法人京都大学 ポリマー、光吸収材料、光電変換材料、電荷輸送材料、有機太陽電池用材料および化合物
CN104558531B (zh) * 2015-01-12 2017-02-01 华南理工大学 一种共轭聚合物的合成方法及应用
JP6536940B2 (ja) * 2015-03-13 2019-07-03 リンテック株式会社 高分子化合物、有機光電変換素子、及び該素子の製造方法
EP3346504B1 (en) * 2015-09-02 2023-07-26 FUJIFILM Corporation Organic thin-film transistor manufacturing method, organic semiconductor composition, organic semiconductor film, and organic semiconductor film manufacturing method
CN112119515A (zh) 2018-03-07 2020-12-22 Clap有限公司 用于制造顶栅底接触有机场效应晶体管的图案化方法
JP7075682B2 (ja) 2018-03-08 2022-05-26 クラップ カンパニー リミテッド 半導電性単層カーボンナノチューブ及び有機半導電性材料を含む有機電界効果トランジスタ
EP3735430B1 (en) 2018-06-26 2023-09-13 Clap Co., Ltd. Vinylether-based polymer as dielectric
CN110372848A (zh) * 2019-06-18 2019-10-25 东华大学 一种含氟代2,1,3-苯并硒二唑与二噻吩并环戊二烯的聚合物及其制备与应用
US11898000B2 (en) * 2019-07-03 2024-02-13 University Of Connecticut High dielectric breakdown polymers; compositions; methods of making; and use thereof
KR102457457B1 (ko) 2020-10-08 2022-10-20 부산대학교 산학협력단 전-고분자 태양전지용 공액 고분자, 이를 포함하는 전-고분자 태양전지용 활성층 조성물 및 이의 용도
CN113971943B (zh) * 2021-11-17 2022-11-01 京东方科技集团股份有限公司 一种显示驱动方法及其装置、显示装置

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5198153A (en) * 1989-05-26 1993-03-30 International Business Machines Corporation Electrically conductive polymeric
US5274058A (en) * 1991-09-12 1993-12-28 Board Of Regents, The University Of Texas System Low bandgap polymers rf fused bithiophenes
JPH0821718B2 (ja) * 1992-07-30 1996-03-04 日本電気株式会社 電界効果型トランジスタおよびその製造方法
KR100354500B1 (ko) * 2000-09-05 2002-09-30 한화석유화학 주식회사 플로렌계 중합체 및 이를 이용한 전기발광 소자
ATE452154T1 (de) * 2003-10-15 2010-01-15 Merck Patent Gmbh Polybenzodithiophene
GB0400997D0 (en) * 2004-01-16 2004-02-18 Univ Cambridge Tech N-channel transistor
US7351606B2 (en) * 2004-06-24 2008-04-01 Palo Alto Research Center Incorporated Method for forming a bottom gate thin film transistor using a blend solution to form a semiconducting layer and an insulating layer
US7772485B2 (en) * 2005-07-14 2010-08-10 Konarka Technologies, Inc. Polymers with low band gaps and high charge mobility
US7781673B2 (en) * 2005-07-14 2010-08-24 Konarka Technologies, Inc. Polymers with low band gaps and high charge mobility
US8075943B2 (en) * 2005-12-27 2011-12-13 Hitachi Chemical Co., Ltd. Purification process for organic electronics material
WO2007121252A2 (en) * 2006-04-11 2007-10-25 Konarka Technologies, Inc. Tandem photovoltaic cells
EP2048176A4 (en) * 2006-08-01 2010-04-28 Sumitomo Chemical Co Polymer compound and light-emitting polymer device

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