Classifications

• • B—PERFORMING OPERATIONS; TRANSPORTING
  • B82—NANOTECHNOLOGY
  • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
  • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
• • G—PHYSICS
  • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
  • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
  • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
  • G03F7/004—Photosensitive materials
• • C—CHEMISTRY; METALLURGY
  • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
  • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
  • C08G81/00—Macromolecular compounds obtained by interreacting polymers in the absence of monomers, e.g. block polymers
  • C08G81/02—Macromolecular compounds obtained by interreacting polymers in the absence of monomers, e.g. block polymers at least one of the polymers being obtained by reactions involving only carbon-to-carbon unsaturated bonds
• • C—CHEMISTRY; METALLURGY
  • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
  • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
  • C09D105/00—Coating compositions based on polysaccharides or on their derivatives, not provided for in groups C09D101/00 or C09D103/00
• • C—CHEMISTRY; METALLURGY
  • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
  • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
  • C09D153/00—Coating compositions based on block copolymers containing at least one sequence of a polymer obtained by reactions only involving carbon-to-carbon unsaturated bonds; Coating compositions based on derivatives of such polymers
• • C—CHEMISTRY; METALLURGY
  • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
  • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
  • C09D187/00—Coating compositions based on unspecified macromolecular compounds, obtained otherwise than by polymerisation reactions only involving unsaturated carbon-to-carbon bonds
  • C09D187/005—Block or graft polymers not provided for in groups C09D101/00 - C09D185/04
• • G—PHYSICS
  • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
  • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
  • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
• • G—PHYSICS
  • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
  • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
  • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
  • G03F7/26—Processing photosensitive materials; Apparatus therefor
  • G03F7/40—Treatment after imagewise removal, e.g. baking
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
  • H10D30/00—Field-effect transistors [FET]
  • H10D30/60—Insulated-gate field-effect transistors [IGFET]
  • H10D30/68—Floating-gate IGFETs
  • H10D30/681—Floating-gate IGFETs having only two programming levels
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
  • H10D30/00—Field-effect transistors [FET]
  • H10D30/60—Insulated-gate field-effect transistors [IGFET]
  • H10D30/68—Floating-gate IGFETs
  • H10D30/6891—Floating-gate IGFETs characterised by the shapes, relative sizes or dispositions of the floating gate electrode
  • H10D30/6893—Floating-gate IGFETs characterised by the shapes, relative sizes or dispositions of the floating gate electrode wherein the floating gate has multiple non-connected parts, e.g. multi-particle floating gate
• • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
  • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
  • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
  • Y10T428/00—Stock material or miscellaneous articles
  • Y10T428/31504—Composite [nonstructural laminate]
  • Y10T428/31551—Of polyamidoester [polyurethane, polyisocyanate, polycarbamate, etc.]
  • Y10T428/31645—Next to addition polymer from unsaturated monomers
• • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
  • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
  • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
  • Y10T428/00—Stock material or miscellaneous articles
  • Y10T428/31504—Composite [nonstructural laminate]
  • Y10T428/31652—Of asbestos
  • Y10T428/31667—Next to addition polymer from unsaturated monomers, or aldehyde or ketone condensation product
• • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
  • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
  • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
  • Y10T428/00—Stock material or miscellaneous articles
  • Y10T428/31504—Composite [nonstructural laminate]
  • Y10T428/31678—Of metal
  • Y10T428/31692—Next to addition polymer from unsaturated monomers
• • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
  • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
  • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
  • Y10T428/00—Stock material or miscellaneous articles
  • Y10T428/31504—Composite [nonstructural laminate]
  • Y10T428/31971—Of carbohydrate

Definitions

• the present invention relates to a material comprising a substrate, one of whose surfaces is covered with a layer based on a block copolymer and its applications for:
• OLEDs organic light-emitting diodes
• OLEDs organic photovoltaic cells
• detection devices nanobiosensors, biochips
• chemistry agribusiness or in the field of health.
• the self-assembly of block copolymers makes it possible to control the organization of nanodomains, and thus to prepare films with an integration density of various nanometric objects (holes, blocks, lamellae, pillars, layers, etc.) appropriate to specific uses that require materials with a high density of active areas.
• This approach is particularly interesting in industrial sectors whose economic stakes require going beyond the limits of conventional processes to develop more and more miniaturized objects.
• the growth of microelectronics is limited by optical lithography techniques, or etching. This is also the case of LED lighting to exceed the LCD technologies, plasma.
• the "micro-array" and micro-fluidic technologies are not suitable for the development of efficient systems of simultaneous multidetection and / or direct detection (SPR, SERS, fluorescent nanosondes, etc.) of molecules or even scale of isolated molecules.
• US Pat. No. 7,045,851 describes the use of a synthetic diblock copolymer, consisting of polystyrene (PS) and methyl poly (meth) acrylate (PMMA), deposited on a silicon oxide layer to form a discrete floating gate of a field effect transistor.
• PS polystyrene
• PMMA methyl poly (meth) acrylate
• Organized nanodomains based on PMMA blocks have a lattice period of the order of 40 nm.
• Patent Application EP 2,088,618 describes the use of a diblock polystyrene (PS) -poly (meth) acrylate (PMMA) copolymer for the preparation of a mask lithographic.
• PS polystyrene
• PMMA poly (meth) acrylate
• Zhang et al. (Advanced Material 2007 19, 1571-1576) describes the use of a diblock polystyrene (PS) -polyethyleneoxide (PEO) copolymer for the preparation of a lithographic mask useful for microelectronics.
• PS polystyrene
• PEO polyethyleneoxide
• Organized nanodomains based on PEO blocks have a lattice period of the order of 22 nm.
• the ITRS Roadmap (“International Technology Roadmap for Semiconductors, 2005 Edition") indicates that a network of nanodomains of less than 22 nm is the "technology node” to be surpassed by 2020 to meet economic issues in the microelectronics sector.
• An object of the present invention is to provide materials (M) comprising a network of nanodomains having a lower period than existing materials.
• the invention provides a material (M) comprising a substrate, one of whose surfaces is covered with a layer of an organized network based on a block copolymer (or optionally a block copolymer mixture) comprising:
• a block (A) consisting of a hydrophobic polymer
• a block (B) consisting of a polysaccharide.
• the material (M) comprises a substrate, one of whose surfaces is partially or totally covered with a layer based on an organized network block copolymer comprising block-based nanodomains (B) and / or nanodomains based on blocks (A).
• a "network” is a set of three-dimensional points that has the following property: when one translates into space according to certain vectors, one finds exactly the same environment. There is a spatial periodicity.
• the organized network according to the invention is characterized by a network period which corresponds to the distance between two nanodomains of blocks of the same nature of self-assembled block copolymers. This organization in nanodomains is due to the self-assembly of blocks presenting antagonistic properties.
• self-assembly of the blocks it is meant that the blocks of the same nature of the block copolymer are arranged in order spontaneously on the support to form the organized network, thanks to the antagonistic properties of the blocks of different natures (for example hydrophilic / hydrophobic, charged / neutral, polar / apolar, flexible / rigid ).
• the inventors have indeed discovered in the context of the present invention that replacing one of the blocks of a block copolymer of the prior art and able to self-assemble to form an organized network, by a poly- or oligosaccharide block and keeping the total molecular weight of the block copolymer, the network period of the resulting organized network is lower.
• the layer of the material (M) according to the invention comprising the ordered film advantageously has a small grating period, generally less than 22 nm, typically less than or equal to 20 nm, especially less than 15 nm, and can even reach 1 1 nm.
• This network period is lower than in the films formed from other block copolymers of the prior art, which allows applications of the material (M) for the production of very miniaturized objects for the needs of nanotechnologies, and microelectronics, in particular.
• the block copolymer has a weight average molecular weight of less than or equal to 40,000 g / mol. Weight average molecular weights of less than 40,000 g / mol favor a low network period.
• Blocks (A) and (B) of the block copolymer are covalently bonded.
• block copolymer is meant that the copolymer consists of blocks in linear sequence.
• comb copolymers which comprise branched chains are not block copolymers.
• the block copolymer is typically diblock or triblock, preferably diblock.
• Block (A) is a hydrophobic polymer, especially chosen from polystyrene, polyalkylstyrene, poly (alkyl (meth) acrylate), polyalkylene, polyacetylene, poly (polyphenylene oxide or sulfide), polydialkylsiloxane, a polyvinylpyridine, a polyalkylene oxide, a poly (alkyl thiophene) such as a poly (3-hexylthiophene), a polypyrrole, a poly-N-isopropylacrylamide, a polycaprolactone, a polyimide or a preferably biodegradable polyester, such as a polyhydroxyalkanoate or a polylactide; .
• (meth) acrylate is meant a methacrylate or an acrylate.
• alkyl may be linear or branched and generally comprises from 1 to 6 carbon atoms.
• Alkylene generally comprises from 1 to 6 carbon atoms.
• Polyethylene, polyisoprene, polybutadiene and polyisobutylene are the preferred polyalkylenes.
• Polybutylstyrene is the preferred polylalkylstyrene.
• Polymethylmethacrylate, polybutylmethacrylate, polybutylacrylate and polyhexylacrylate are the preferred polyalkyl (meth) acrylates.
• Polydimethylsiloxane is the preferred polydialkysiloxane.
• Polyethylene oxide is the preferred polyalkylene oxide.
• the block (A) is made of polystyrene, poly (alkyl (meth) acrylate or poly (3-hexylthiophene), and in particular polystyrene or poly (alkyl (meth) acrylate.
• the block (A) is preferably composed of a polystyrene with a degree of polymerization of 10 to 30, in particular from 15 to 20, in particular 18.
• the polysaccharide of the block (B) preferably has a degree of polymerization (DP) of from 2 to 40, in particular from 2 to 20, preferably from 5 to 9, in particular of the order of 7.
• the self-assembly of Block copolymers are in fact favored when the (B) polysaccharide block of 2 to 40 units, especially 2 to 20 units.
• the polysaccharide of the block copolymer block (B) may be an oligosaccharide (typically, an oligosaccharide has a degree of polymerization of less than or equal to 10).
• the units of the block (B) may be composed of the same saccharide or different saccharides. These saccharides may especially be chosen from maltose, cellulose and its derivatives such as carboxymethylcellulose, cellulose acetate, hydroxyethylcellulose, starch, chitin, chitosan, xyloglucan, pectin, carrageenans, dextrans, glucans, especially beta 1, 3 and beta 1, 6, and O-glycans, N-glycans or C-glycans.
• the block (B) is maltoheptaose or maltooctadecaose, in particular maltoheptaose.
• the polysaccharides are advantageously derived from plant species and make it possible to efficiently conserve the biomass.
• the polysaccharides can be synthesized chemically or recombinantly (by engineering glycosyltransferases or glycosylhydrolases). They can come from biomasses of various origins: plants, algae, bacteria, fungi, industrial co-products, agricultural wastes, etc. Biomass can be enhanced by the use of its components at the nanoscale, especially for the manufacture of high value-added materials useful in nanotechnology.
• a diblock copolymer where the block (A) is polystyrene and where the block (B) is maltoheptaose is particularly preferred according to the invention.
• diblock copolymers used according to the invention can be synthesized according to any method known per se, described, for example, by the method described in "Block copolymers I. Advances in polymer science, vol.189; Volker Abetz (Institute fur Polymerforschung, Geesthacht, Germany) ". Springer: Berlin, Heidelberg, New York. 2005.
• the blocks (A) and (B) can be synthesized separately, then reactive terminal functions are chemically introduced on each of the blocks (unless these functions are already present at the end of the synthesis of the block).
• Reactive terminal functions are chosen so that they are orthogonal (that is, the function of a block can not react with the function of a block of the same nature but is able to react exclusively with different block functions).
• the blocks are then reacted together.
• This synthetic route (“click" route) is often preferred to other techniques because it avoids a step of protecting the OH groups contained on the polysaccharide.
• the volume fraction of the block (A) in the block copolymer is between 0.1 and 0.4, especially when the degree of polymerization of the polysaccharide block (B) is between 2 and 20.
• the block (B) is hydrogen bonded to at least one molecule comprising an amine, amide, hydroxyl and / or a carboxylic acid function. These functions are in fact particularly suitable for bonding by hydrogen bonding to the hydroxyl functions of the polysaccharide.
• the molecule generally has a low molecular weight, typically less than 500 g / mol.
• the molecule is not a saccharide block of another block copolymer. This molecule may for example be 4 ', 4-bipyridine, 2', 2-bipyridine, 2- (2,4-difluoro phenyl) pyridine or 9-anthracene carboxylic acid, preferably 4 ', 4 bipyridine.
• Hydrogen bonds can be formed between the molecule and the polysaccharide block (B) of the copolymer by dissolving the molecule and the copolymer at blocks in an aprotic solvent, for example tetrahydrofuran, dioxane, toluene, chloroform, acetone, ether or dimethylformamide.
• an aprotic solvent for example tetrahydrofuran, dioxane, toluene, chloroform, acetone, ether or dimethylformamide.
• Protic solvents of the water or alcohol type are to be avoided, since the formation of hydrogen bonds between the molecule and the oligopolysaccharide would be in competition with the formation of hydrogen bonds between the molecule and the protic solvent, on the one hand, and between the polysaccharide and the protic solvent, on the other hand.
• the self-assembly of block copolymers is favored by the presence of this molecule, although it is not essential. For example, it has been verified in X-ray diffraction (SAXS spectrum) that the amylose-block-polystyrene system, and in particular polystyrene-maltooctadecaose, can self-organize without the aid of 4 ', 4-bypiridine.
• SAXS spectrum X-ray diffraction
• the molecule may be photoluminescent, i.e., capable of absorbing photons and then re-emitting absorbed energy in the form of longer wavelength light.
• the molar proportion between the molecule and the block (B) varies between 0, 1 and 1, 0.
• the substrate of the material (M) is typically a solid support of low roughness and dimensions and / or variable shapes.
• the substrate comprises silicon.
• the material (M) according to this embodiment will be designated (M Si ) hereinafter for reasons of brevity.
• the substrate may consist of silicon, for example a silicon wafer, or be silicon covered with an insulating or dielectric material, for example microbeads of SiO 2 .
• the layer of insulating or dielectric material covering the silicon has in particular a thickness of 2 to 5 nm.
• a particularly preferred material comprises a silicon substrate, one of whose surfaces is covered with a layer of an organized network based on a block copolymer comprising:
• a block (A) consisting of a polystyrene polymer with a degree of polymerization of 18, and
• a block (B) consisting of a maltoheptaose with a degree of polymerization of 7, said maltoheptaose being linked by hydrogen bonding to 4 ', 4-bipyridine.
• the substrate is a polymer (for example poly (3,4-ethylenedioxythiophene) (PEDT)), glass, metal (for example gold, titanium, platinum) or a metal oxide (eg titanium dioxide).
• PEDT poly (3,4-ethylenedioxythiophene)
• metal for example gold, titanium, platinum
• a metal oxide eg titanium dioxide.
• M PV M metal oxide
• the invention relates to the method for preparing a material (M) as defined above, comprising a phase separation step, in particular by heat treatment (annealing step).
• the method may include the steps of:
• the preparation of the material (M) is part of a sustainable industrial development by valuing the biomass at the nanoscale (with the replacement of synthetic polymers derived from oil by polysaccharides) and by preferentially using green chemistry processes.
• the solvent of the solution used in step a is typically an aprotic solvent, for example tetrahydrofuran.
• Step a is typically carried out by depositing the solution by spin coating ("spin coating" in English), by screen printing or by ink jet.
• the ink jet deposition is particularly suitable for reducing the amount of solution used and thus the cost of the process and also makes it possible to deposit the solution on areas located on the surface of the substrate.
• step ⁇ which corresponds to an annealing step, the blocks of the copolymer self-assemble, whereby a material (M) comprising a substrate, one of whose surfaces is covered with a layer, is obtained.
• a material (M) comprising a substrate, one of whose surfaces is covered with a layer
• the person skilled in the art knows how to adapt the conditions of this step by taking into account the antagonistic chemical properties of the blocks (A) and (B) [(hydrophilic / hydrophobic, charged / neutral, polar / apolar, flexible / rigid ... ); (The block (B) polysaccharide being hydrophilic, polar and rigid and the block (A) being hydrophobic)] and more particularly the rigidity of the block (B) polysaccharide and its low solubility in organic solvent.
• the temperature during step ⁇ is 140 to 220 ° C, preferably 150 to 200 ' ⁇ .
• the annealing may be carried out under a controlled atmosphere, for example in a supercritical CO 2 2 medium.
• the self-assembly of the blocks and therefore the geometry of the network obtained depends on several factors, such as the length of the copolymer chains, the thickness of the layer, the temperature and the annealing time.
• the characterization of the layer can be carried out by various techniques such as atomic force microscopy (AFM), transmission electron microscopy (TEM or TEM), ellipsometry, small-angle X-ray scattering technique (SAXS , Small Angle X-ray Scattering), the technique of grazing Incidence Small Angle X Ray Scattering (GISAXS) or high-resolution scanning electron microscopy (SEM).
• AFM atomic force microscopy
• TEM or TEM transmission electron microscopy
• SAXS small-angle X-ray scattering technique
• GISAXS Small Angle X-ray Scattering
• SEM high-resolution scanning electron microscopy
• the layer formed during step ⁇ ) generally has a thickness of the order of the periodicity of the nanodomains formed.
• nanodomains comprising the (B) polysaccharide blocks can in particular be oriented:
• the parallel or perpendicular morphology of the periodic structure is controllable by the heat treatment, the nature of the solvents and by various factors. ratio with the composition of the blocks, and in particular by the block (B) / block (A) volume fraction.
• the copolymer comprises an equimolar amount of molecule bonded by hydrogen bonding to the polysaccharide block (B) and saccharide units in the polysaccharide block (B)
• the nanodomains generally form lines parallel to the plane of the substrate.
• the copolymer comprises an equimolar amount of molecule bonded by hydrogen bonding to the polysaccharide block (B) and hydroxyl groups in the polysaccharide block (B)
• the nanodomains generally form lines perpendicular to the plane of the substrate.
• the nanodomains When the copolymer has fewer molecules bonded by hydrogen bonding to the polysaccharide block (B) than saccharide units in the polysaccharide block (B), the nanodomains generally form cylinders whose axes are perpendicular to the plane of the substrate.
• blocks (A) and (B) of the block copolymer, their respective volume fractions, the presence or absence of hydrogen bonded molecules in block (B) and the conditions of steps a and ⁇ are chosen so to obtain the most suitable crystalline system for the intended application.
• an organization perpendicular to the substrate (Ml), in particular a compact hexagonal phase of cylinders whose axis is perpendicular to the substrate plane, is preferred for vertical transistor applications, memories and nanobiosensors, which require the realization of pads, holes and pillars, while a parallel organization to the substrate (M //), lamellar phase type, is desired for OLED or OPV applications that require organization of the nanodomains parallel to the substrate.
• the invention relates to the use of a material as defined above as a precursor of a lithographic mask in electronics.
• the subject of the invention is in particular:
• a method of preparing a material (M TRO u), comprising step a) of treating the copolymer layer of the material (M) so as to eliminate selectively one of the blocks (A) or (B) and to form cavities separated from each other by the remainder of the copolymer, and,
• the selective removal of one of the blocks can be done by plasma reactive etching (in particular oxygen plasma), by chemical or enzymatic treatment or by exposure to deep UV (“deep-UV”).
• plasma reactive etching in particular oxygen plasma
• chemical or enzymatic treatment or by exposure to deep UV (“deep-UV”).
• step a) is carried out by bringing the material (M) into contact with an acid selected from H 5 IO 6 , HCl or TFA (trifluoroacetic acid).
• This treatment differs from those previously described in documents US 2004/0256662 and FR 2 927 467. Moreover, this treatment is easily implemented, unlike reactive ionic etching processes taking place in a plasma with apparatus. specific that require the control of many parameters (choice of gases, pressure, power, temperature, polarization).
• the invention also relates to the use of the material (M T ROU) as a lithographic mask in electronics, in particular for the preparation of a flash memory, a vertical transistor or a non-sequential access memory.
• the material (M TRO u) can be implemented in a method for preparing a flash memory, a vertical transistor or a non-sequential access memory comprising the steps of:
• step b) depositing a metallic or semiconductor material in the cavities formed in step a) on the material (M TRO u),
• step c) treating the material obtained in step b) by reactive plasma etching, by chemical or enzymatic or UV treatment to selectively remove the remaining block of copolymer and form cavities separated from each other by the metallic or semiconductor material, d) depositing a dielectric material, for example silicon dioxide, in the cavities formed in step c).
• a dielectric material for example silicon dioxide
• the remaining copolymer block of step c) consists of the blocks (B).
• the remaining block of copolymer of step c) consists of the blocks (A).
• the material (M1) is particularly suitable for the preparation of a gate of a vertical transistor (FIG. 7) or of a RAM memory (FIG. 8) while a material (M //) is particularly suitable for the manufacture of a floating gate of a flash memory ( Figure 6).
• the substrate of the material (M), and therefore of the material (M T ROU) which is derived therefrom comprises or consists of silicon, for example a silicon wafer, or consists of a plate silicon coated with an insulating or dielectric material (for example SiO 2 microbeads), the layer of said insulating or dielectric material covering the plate having for example a thickness of 2 to 5 nm.
• the material (M TRO u) was then obtained from the material (M Si ) as defined above. Silicon is indeed the semiconductor most used in electronics.
• the flash memories, vertical transistor and RAM obtained from the material (JROU) (and thus the material (M)) are thus obtained by a simple and inexpensive method.
• the flash memory, vertical transistor and RAM obtained have a high density of nanoscale organized patterns due to the short network period of the nanodomains of the material (M) used in their preparation process, and are therefore very miniaturized.
• the invention relates to the use of the material (M T ROU) for the production of nanobiosensors and nanobiotches.
• the material (M T ROU) can be implemented in a process for preparing a nanobiotech or a nanobiotech, comprising the step b ') of grafting biomolecules (such as peptides or proteins, antibodies, deoxyribonucleic acids, oligo- or polysaccharides ...) in the cavities formed in step a) on the material (M T ROU) -
• biomolecules such as peptides or proteins, antibodies, deoxyribonucleic acids, oligo- or polysaccharides
• the nanobiosensor and the nanobiota formed can be integrated into detection devices used in the medical field, in the food industry or in chemistry.
• the invention relates to an organic light-emitting diode (OLED) or an organic photovoltaic cell (OPV) comprising a material (M) in which the block (B) is linked by hydrogen bonding to a photoluminescent molecule comprising an amine function , amide, hydroxyl and / or a carboxylic acid function.
• OLED organic light-emitting diode
• OCV organic photovoltaic cell
• ETCs electron transport layers
• CTT - hole transport layer
• This method of deposit involves a manufacturing cost of OLED higher than that proposed in the present invention.
• the reduction in the manufacturing cost of the OLEDs according to the invention is linked to the fact that the ordered film can be deposited either by spinning or by means of printing techniques such as screen printing or ink-jet printing. which are inexpensive techniques.
• the use of a thin film of block copolymers as a base material for producing OLEDs no longer makes it necessary to vacuum deposit the various transport layers (CTE and CTT) since the phase separation between the The polysaccharide blocks and the other blocks of the block copolymer generate the presence of interfaces between the nanodomains which are exciton dissociation interfaces.
• the nanodomains formed in the films have a size smaller than the diffusion length of the excitons, typically 10 nm. This results in a very efficient dissociation of excitons since the latter placed anywhere in the material find a dissociation interface closer than their diffusion length.
• the photoluminescent molecules are hydrogen-bonded to the block-based nanodomains (B) of the material (M) and therefore have a highly ordered spatial organization on the material (M). The signal emitted by an OLED comprising such a material (M) is therefore interesting.
• FIG. 1 represents three Fourier transform infrared spectra (FTIR) obtained by an FTIR spectrometer (Spectrum IR I, PERKIN EIMER) in KBr mode of the films synthesized in Example 1, ie the spectra of a polystyrene diblock copolymer film.
• FTIR Fourier transform infrared spectra
• Curve (a) a polystyrene-maltoheptaose diblock copolymer hydrogen bonded to 4,4'-bipyridine
• curve (c) 4,4'-bipyridine
• FIG. 2 is the atomic force microscopy image obtained with a "Picoplus Molecular Imaging" apparatus operating in "Taping" mode of a thin film of diblock copolymer polystyrene-maltoheptaose linked by hydrogen bonding to the 4,4 'bipyridine obtained according to Example 1 (film prepared by spin coating a dilute copolymer solution (0.5% w / w) on an Si (100) oxide substrate followed by vacuum annealing at 170 ° C for 24h).
• the nanodomains are in the form of cylinders whose axis is perpendicular to the plane of the substrate.
• the material corresponds to the material (M ⁇ ) with a nanodomain organization in a centered cubic crystalline system.
• Each clear zone corresponds to a nanodomain consisting of oligosaccharide blocks linked to 4,4'-bipyridine and the darker areas surrounding them correspond to the polystyrene blocks.
• FIG. 3 represents a profile of a sectional view corresponding to a continuous line on the phase-mode atomic force microscopy image of FIG. 2.
• the voltage in mV is represented as a function of the distance in nm.
• Each peak corresponds to a nanodomain consisting of oligosaccharide blocks linked to 4,4 'bipyridine.
• the network period is 1 1 nm.
• FIG. 5 represents the photoluminescence spectrum of a polystyrene-maltoheptaose diblock copolymer film linked by hydrogen bonding to 4,4'-bipyridine (copolymer of example 1) obtained by excitation at 365 nm after annealing at 170 ° C. while :
• Figure 6 is a schematic sectional view of a flash memory.
• silicon substrate used for the manufacture of the material (M S i)
• Source Source
• Drain Drain
• Si0 2 dielectric material
• Grid polysilicon
• (6) floating grid made of metallic or semiconductor material.
• FIG. 7 corresponds to a schematic sectional view of a vertical transistor: (1): silicon source (substrate used for the manufacture of the material (M S i)); (3): Drain; (4): Si0 2 (dielectric material); (5): Grid (polysilicon).
• FIG. 8 corresponds to a schematic sectional view of a RAM memory: (1): silicon (substrate used for the manufacture of the material (M Si )); (4): Si0 2 (dielectric material); (5): Grid (polysilicon, TaN). The zone occupied by the Si0 2 and the gate corresponds to the nanoshells obtained by etching the silicon of the substrate of the material (M1).
• FTIR Fourier transform infrared
• the film was made from the diblock copolymer of Example 2, including 4,4'-bipyridine.
• the freshly deposited film was annealed overnight at 170 ° C under vacuum to allow phase separation leading to the formation of nanodomains consisting of hydrogen bonded oligosaccharides at 4 ', 4-bipyridine organized in a network. centered cubic ( Figure 2).
• the phase of a sectional view corresponding to a continuous line on the atomic force microscopy image of FIG. 2 is shown in FIG. 3.
• Each peak corresponds to a nanodomain consisting of 4,4-linked oligosaccharide blocks. bipyridine.
• the period of the grating obtained is 11 nm.
• a film prepared from the copolymer of Example 2 comprising 4,4'-bipyridine was organized following the protocol of Example 2 (annealing at 170 ° C. for 24 h) by spin coating (spin coating ) on a silicon substrate of a solution of the copolymer (volume fraction 30%) in a solvent THF / DMSO: 1/1, v / v.
• the material obtained has nanodomains organized parallel to the plane of the substrate (FIG. 4).
• EXAMPLE 6 Selective removal of polysaccharide nanodomains from the film to obtain the material (M T ROU) that can be used in micro- or nanoelectronics applications.
• the treatment of the material of Example 3 was treated with a solution of trifluoroacetic acid to selectively remove maltoheptaose nanodomains and form cavities separated from each other by the remaining polystyrene, which could be used to prepare a flash memory (FIG. 6), a vertical transistor (FIG. 7), a non-sequential access memory (FIG. 8) or to produce nanobiosensors.
• the treatment may be effected with hydrochloric acid instead of trifluoroacetic acid.

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