JP2013528947A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2013528947A5 JP2013528947A5 JP2013512212A JP2013512212A JP2013528947A5 JP 2013528947 A5 JP2013528947 A5 JP 2013528947A5 JP 2013512212 A JP2013512212 A JP 2013512212A JP 2013512212 A JP2013512212 A JP 2013512212A JP 2013528947 A5 JP2013528947 A5 JP 2013528947A5
- Authority
- JP
- Japan
- Prior art keywords
- tialxny
- semiconductor structure
- vapor deposition
- depositing
- annealing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000463 material Substances 0.000 claims 28
- 239000004065 semiconductor Substances 0.000 claims 10
- 238000000137 annealing Methods 0.000 claims 8
- 238000000151 deposition Methods 0.000 claims 8
- 229910002601 GaN Inorganic materials 0.000 claims 6
- 229910052782 aluminium Inorganic materials 0.000 claims 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminum Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims 5
- 238000000231 atomic layer deposition Methods 0.000 claims 3
- 238000005229 chemical vapour deposition Methods 0.000 claims 3
- 238000005240 physical vapour deposition Methods 0.000 claims 3
- 238000007740 vapor deposition Methods 0.000 claims 3
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/787,211 | 2010-05-25 | ||
US12/787,211 US20110291147A1 (en) | 2010-05-25 | 2010-05-25 | Ohmic contacts for semiconductor structures |
PCT/US2011/037947 WO2011150089A2 (en) | 2010-05-25 | 2011-05-25 | Ohmic contacts for semiconductor structures |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2013528947A JP2013528947A (ja) | 2013-07-11 |
JP2013528947A5 true JP2013528947A5 (de) | 2014-07-10 |
Family
ID=45004777
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2013512212A Pending JP2013528947A (ja) | 2010-05-25 | 2011-05-25 | 半導体構造用オーミック接触 |
Country Status (7)
Country | Link |
---|---|
US (5) | US20110291147A1 (de) |
JP (1) | JP2013528947A (de) |
KR (1) | KR20130071440A (de) |
CN (1) | CN102947956B (de) |
SG (1) | SG185718A1 (de) |
TW (1) | TWI550907B (de) |
WO (1) | WO2011150089A2 (de) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20110291147A1 (en) | 2010-05-25 | 2011-12-01 | Yongjun Jeff Hu | Ohmic contacts for semiconductor structures |
JP5236787B2 (ja) * | 2011-09-27 | 2013-07-17 | シャープ株式会社 | 窒化物半導体装置およびその製造方法 |
CN106129216A (zh) * | 2012-11-16 | 2016-11-16 | 大连美明外延片科技有限公司 | 一种四元AlGaInP发光二极管芯片及其制造方法 |
US9419181B2 (en) * | 2013-05-13 | 2016-08-16 | Infineon Technologies Dresden Gmbh | Electrode, an electronic device, and a method for manufacturing an optoelectronic device |
US9425050B2 (en) * | 2013-08-16 | 2016-08-23 | Avago Technologies General Ip (Singapore) Pte. Ltd. | System and method for providing an electron blocking layer with doping control |
EP2881982B1 (de) | 2013-12-05 | 2019-09-04 | IMEC vzw | Verfahren zur Herstellung CMOS-kompatibler Kontaktschichten in Halbleitervorrichtungen |
JP6444718B2 (ja) * | 2014-12-15 | 2018-12-26 | 株式会社東芝 | 半導体装置 |
CN104979215B (zh) * | 2015-06-23 | 2018-01-02 | 京东方科技集团股份有限公司 | 低温多晶硅薄膜晶体管及其制备方法 |
CN105914270B (zh) * | 2016-06-28 | 2018-09-18 | 聚灿光电科技股份有限公司 | 硅基氮化镓led外延结构的制造方法 |
US10032880B2 (en) | 2016-10-10 | 2018-07-24 | Semiconductor Components Industries, Llc | Method for forming ohmic contacts |
TWI622188B (zh) * | 2016-12-08 | 2018-04-21 | 錼創科技股份有限公司 | 發光二極體晶片 |
US10290719B1 (en) | 2017-12-27 | 2019-05-14 | International Business Machines Corporation | Indium gallium arsenide metal oxide semiconductor field effect transistor having a low contact resistance to metal electrode |
Family Cites Families (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5136138A (ja) | 1974-09-21 | 1976-03-26 | Ricoh Kk | Denshishashinkankozairyo |
JP2509713B2 (ja) * | 1989-10-18 | 1996-06-26 | シャープ株式会社 | 炭化珪素半導体装置およびその製造方法 |
JP3278877B2 (ja) * | 1991-11-08 | 2002-04-30 | ソニー株式会社 | 配線の形成方法 |
JP2783349B2 (ja) * | 1993-07-28 | 1998-08-06 | 日亜化学工業株式会社 | n型窒化ガリウム系化合物半導体層の電極及びその形成方法 |
DE69433926T2 (de) * | 1993-04-28 | 2005-07-21 | Nichia Corp., Anan | Halbleitervorrichtung aus einer galliumnitridartigen III-V-Halbleiterverbindung |
JPH09232632A (ja) * | 1995-12-22 | 1997-09-05 | Toshiba Corp | 半導体発光素子及びその製造方法 |
TW367528B (en) * | 1996-02-02 | 1999-08-21 | Applied Materials Inc | Titanium aluminide wetting layer for aluminum contacts |
US5700718A (en) * | 1996-02-05 | 1997-12-23 | Micron Technology, Inc. | Method for increased metal interconnect reliability in situ formation of titanium aluminide |
JPH09292285A (ja) * | 1996-04-30 | 1997-11-11 | Yamaha Corp | 基板温度の測定方法 |
US5763010A (en) * | 1996-05-08 | 1998-06-09 | Applied Materials, Inc. | Thermal post-deposition treatment of halogen-doped films to improve film stability and reduce halogen migration to interconnect layers |
JPH10125676A (ja) * | 1996-10-15 | 1998-05-15 | Fujitsu Ltd | アルミニウム配線の作製方法 |
US6677619B1 (en) * | 1997-01-09 | 2004-01-13 | Nichia Chemical Industries, Ltd. | Nitride semiconductor device |
JP3271657B2 (ja) * | 1997-10-09 | 2002-04-02 | 日亜化学工業株式会社 | n型窒化ガリウム系化合物半導体の電極及びその形成方法 |
KR100333724B1 (ko) * | 1998-06-30 | 2002-09-17 | 주식회사 하이닉스반도체 | 티타늄알루미늄나이트라이드반사방지막을이용한반도체소자의금속배선형성방법 |
JP3974284B2 (ja) * | 1999-03-18 | 2007-09-12 | 株式会社東芝 | 半導体装置の製造方法 |
TW493287B (en) * | 2001-05-30 | 2002-07-01 | Epistar Corp | Light emitting diode structure with non-conductive substrate |
JP4030534B2 (ja) * | 2003-07-25 | 2008-01-09 | 昭和電工株式会社 | 化合物半導体発光素子およびその製造方法 |
JP4539844B2 (ja) * | 2004-04-15 | 2010-09-08 | セイコーエプソン株式会社 | 誘電体キャパシタおよびその製造方法ならびに半導体装置 |
KR20060073419A (ko) | 2004-06-14 | 2006-06-28 | 삼성전자주식회사 | 분산화 개인용무선네트워크에서의 전력절감 기능을 구비한시스템 및 방법 |
JP4733371B2 (ja) * | 2004-08-18 | 2011-07-27 | 三菱化学株式会社 | n型窒化物半導体用のオーミック電極およびその製造方法 |
JP5136138B2 (ja) | 2008-03-18 | 2013-02-06 | Jfeスチール株式会社 | 熱間圧延用遠心鋳造製複合ロール |
CN101303978A (zh) * | 2008-07-04 | 2008-11-12 | 西安电子科技大学 | 适用于氮化镓器件n型欧姆接触的制作方法 |
CN101369599B (zh) * | 2008-07-11 | 2011-02-16 | 北京大学 | 氮化镓基器件的欧姆接触及其制备方法 |
US20110291147A1 (en) | 2010-05-25 | 2011-12-01 | Yongjun Jeff Hu | Ohmic contacts for semiconductor structures |
-
2010
- 2010-05-25 US US12/787,211 patent/US20110291147A1/en not_active Abandoned
-
2011
- 2011-05-25 JP JP2013512212A patent/JP2013528947A/ja active Pending
- 2011-05-25 KR KR1020127033623A patent/KR20130071440A/ko not_active Application Discontinuation
- 2011-05-25 WO PCT/US2011/037947 patent/WO2011150089A2/en active Application Filing
- 2011-05-25 CN CN201180031071.2A patent/CN102947956B/zh active Active
- 2011-05-25 SG SG2012086187A patent/SG185718A1/en unknown
- 2011-05-25 TW TW100118367A patent/TWI550907B/zh active
-
2014
- 2014-04-25 US US14/261,901 patent/US9608185B2/en active Active
-
2017
- 2017-01-05 US US15/399,372 patent/US10446727B2/en active Active
-
2019
- 2019-10-03 US US16/592,425 patent/US10998481B2/en active Active
-
2021
- 2021-04-06 US US17/223,732 patent/US20210257526A1/en active Pending
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP2013528947A5 (de) | ||
WO2011153095A3 (en) | Metal gate structures and methods for forming thereof | |
JP2013153148A5 (ja) | 半導体装置の作製方法 | |
JP2014045200A5 (de) | ||
JP2012146838A5 (de) | ||
JP2014131025A5 (de) | ||
JP2013175713A5 (de) | ||
JP2012004549A5 (ja) | 半導体装置 | |
WO2012167141A3 (en) | Metal and silicon containing capping layers for interconnects | |
JP2011243971A5 (de) | ||
JP2011100994A5 (ja) | 半導体装置の作製方法 | |
GB0901604D0 (en) | method for producing a contact, a contact and solar cell comprising a contact | |
JP2012009837A5 (ja) | 半導体装置の作製方法 | |
JP2012009838A5 (ja) | 半導体装置の作製方法 | |
GB2498904A (en) | Hole injection layers | |
JP2015015401A5 (de) | ||
JP2010526443A5 (de) | ||
JP2013138189A5 (ja) | 半導体装置の作製方法 | |
JP2011054812A5 (de) | ||
JP2014011350A5 (de) | ||
JP2013207086A5 (de) | ||
WO2013134592A3 (en) | Atomic layer deposition strengthening members and method of manufacture | |
WO2013027041A3 (en) | A semiconductor laser device and a method for manufacturing a semiconductor laser device | |
JP2010263183A5 (de) | ||
JP2012094757A5 (de) |