JP2013527599A5 - - Google Patents

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JP2013527599A5
JP2013527599A5 JP2013501693A JP2013501693A JP2013527599A5 JP 2013527599 A5 JP2013527599 A5 JP 2013527599A5 JP 2013501693 A JP2013501693 A JP 2013501693A JP 2013501693 A JP2013501693 A JP 2013501693A JP 2013527599 A5 JP2013527599 A5 JP 2013527599A5
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organic electronic
electronic device
transition metal
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JP5847157B2 (ja
JP2013527599A (ja
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JP2013501693A 2010-03-31 2011-03-31 有機半導体デバイス用の正孔伝導層用のドーパント及びその使用 Expired - Fee Related JP5847157B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE201010013495 DE102010013495A1 (de) 2010-03-31 2010-03-31 Dotierstoff für eine Lochleiterschicht für organische Halbleiterbauelemente und Verwendung dazu
DE102010013495.3 2010-03-31
PCT/EP2011/001645 WO2011120709A1 (de) 2010-03-31 2011-03-31 Dotierstoff für eine lochleiterschicht für organische halbleiterbauelemente und verwendung dazu

Publications (3)

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JP2013527599A JP2013527599A (ja) 2013-06-27
JP2013527599A5 true JP2013527599A5 (https=) 2014-05-01
JP5847157B2 JP5847157B2 (ja) 2016-01-20

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JP2013501693A Expired - Fee Related JP5847157B2 (ja) 2010-03-31 2011-03-31 有機半導体デバイス用の正孔伝導層用のドーパント及びその使用

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US (2) US9006716B2 (https=)
EP (1) EP2553047B1 (https=)
JP (1) JP5847157B2 (https=)
KR (2) KR101705136B1 (https=)
CN (2) CN102947414B (https=)
DE (1) DE102010013495A1 (https=)
WO (1) WO2011120709A1 (https=)

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JP6983754B2 (ja) 2015-07-29 2021-12-17 メルク パテント ゲーエムベーハー 有機エレクトロルミネッセンス素子のための材料
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JP7051691B2 (ja) 2016-02-05 2022-04-11 メルク パテント ゲーエムベーハー 電子素子のための材料
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