JP2013527599A5 - - Google Patents

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JP2013527599A5
JP2013527599A5 JP2013501693A JP2013501693A JP2013527599A5 JP 2013527599 A5 JP2013527599 A5 JP 2013527599A5 JP 2013501693 A JP2013501693 A JP 2013501693A JP 2013501693 A JP2013501693 A JP 2013501693A JP 2013527599 A5 JP2013527599 A5 JP 2013527599A5
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independently
hole
organic electronic
electronic device
transition metal
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JP2013501693A
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JP2013527599A (ja
JP5847157B2 (ja
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JP2013501693A 2010-03-31 2011-03-31 有機半導体デバイス用の正孔伝導層用のドーパント及びその使用 Expired - Fee Related JP5847157B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE201010013495 DE102010013495A1 (de) 2010-03-31 2010-03-31 Dotierstoff für eine Lochleiterschicht für organische Halbleiterbauelemente und Verwendung dazu
DE102010013495.3 2010-03-31
PCT/EP2011/001645 WO2011120709A1 (de) 2010-03-31 2011-03-31 Dotierstoff für eine lochleiterschicht für organische halbleiterbauelemente und verwendung dazu

Publications (3)

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JP2013527599A JP2013527599A (ja) 2013-06-27
JP2013527599A5 true JP2013527599A5 (https=) 2014-05-01
JP5847157B2 JP5847157B2 (ja) 2016-01-20

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JP2013501693A Expired - Fee Related JP5847157B2 (ja) 2010-03-31 2011-03-31 有機半導体デバイス用の正孔伝導層用のドーパント及びその使用

Country Status (7)

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US (2) US9006716B2 (https=)
EP (1) EP2553047B1 (https=)
JP (1) JP5847157B2 (https=)
KR (2) KR101705136B1 (https=)
CN (2) CN106410026B (https=)
DE (1) DE102010013495A1 (https=)
WO (1) WO2011120709A1 (https=)

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TWI764942B (zh) 2016-10-10 2022-05-21 德商麥克專利有限公司 電子裝置
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