JP2013524510A - ｐ型拡散層の上に負荷電パッシベーション層を形成する方法 - Google Patents

ｐ型拡散層の上に負荷電パッシベーション層を形成する方法 Download PDF

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JP2013524510A
JP2013524510A JP2013502606A JP2013502606A JP2013524510A JP 2013524510 A JP2013524510 A JP 2013524510A JP 2013502606 A JP2013502606 A JP 2013502606A JP 2013502606 A JP2013502606 A JP 2013502606A JP 2013524510 A JP2013524510 A JP 2013524510A
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layer
solar cell
substrate
silicon
oxide
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JP2013524510A5 (enExample
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マイケル ピー． スチュワート，
ムークル アグラワル，
ロヒト ミシュラ，
ヘマント ムンゲカー，
ティモシー， ダブリュ． ウェイドマン，
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Applied Materials Inc
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Applied Materials Inc
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/30—Coatings
    • H10F77/306—Coatings for devices having potential barriers
    • H10F77/311—Coatings for devices having potential barriers for photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells

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  • Photovoltaic Devices (AREA)
  • Formation Of Insulating Films (AREA)
JP2013502606A 2010-03-30 2011-03-10 ｐ型拡散層の上に負荷電パッシベーション層を形成する方法 Pending JP2013524510A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US31914110P 2010-03-30 2010-03-30
US61/319,141 2010-03-30
PCT/US2011/027914 WO2011126660A2 (en) 2010-03-30 2011-03-10 Method of forming a negatively charged passivation layer over a diffused p-type region

Publications (2)

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JP2013524510A true JP2013524510A (ja) 2013-06-17
JP2013524510A5 JP2013524510A5 (enExample) 2014-04-24

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US (1) US20110240114A1 (enExample)
JP (1) JP2013524510A (enExample)
CN (1) CN102834930A (enExample)
DE (1) DE112011101134T5 (enExample)
TW (1) TW201143125A (enExample)
WO (1) WO2011126660A2 (enExample)

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JPWO2015060012A1 (ja) * 2013-10-25 2017-03-09 シャープ株式会社 光電変換素子

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CN102623558B (zh) * 2012-03-27 2014-07-16 山东力诺太阳能电力股份有限公司 酸法后制绒无死层发射极的制备工艺
CN103578904B (zh) * 2012-07-18 2016-05-25 中微半导体设备(上海)有限公司 一种用于多腔室等离子处理装置的减少颗粒污染的方法
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CN103050553B (zh) * 2012-12-29 2015-06-24 中国科学院沈阳科学仪器股份有限公司 一种双面钝化晶硅太阳能电池及其制备方法
KR101631450B1 (ko) * 2013-03-05 2016-06-17 엘지전자 주식회사 태양 전지
US9559222B2 (en) * 2013-08-14 2017-01-31 Arizona Board Of Regents On Behalf Of Arizona State University Method and tool to reverse the charges in anti-reflection films used for solar cell applications
JP2016539514A (ja) * 2013-11-04 2016-12-15 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 酸化物−ケイ素スタックのための付着性の改善
CN103746009A (zh) * 2014-01-23 2014-04-23 通用光伏能源(烟台)有限公司 一种太阳能电池的钝化层及其制备工艺
WO2015130261A1 (en) * 2014-02-25 2015-09-03 Empire Technology Development Llc Silicon chip with refractive index gradient for optical communication
CN104064623B (zh) * 2014-05-27 2017-03-29 中国科学院电工研究所 一种提升太阳电池转换效率的后处理方法
CN104037245B (zh) * 2014-07-01 2017-11-10 中国科学院宁波材料技术与工程研究所 具有带负电荷抗反射层的太阳电池及其制法
KR101541252B1 (ko) * 2014-10-13 2015-08-04 한양대학교 에리카산학협력단 태양 전지 및 그 제조 방법
CN104362240B (zh) * 2014-10-31 2017-10-20 广东德力光电有限公司 一种LED芯片的Al2O3/SiON钝化层结构及其生长方法
US9443865B2 (en) 2014-12-18 2016-09-13 Sandisk Technologies Llc Fabricating 3D NAND memory having monolithic crystalline silicon vertical NAND channel
DE102015226516B4 (de) * 2015-12-22 2018-02-22 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung eingetragener Verein Verfahren zur Dotierung von Halbleitersubstraten mittels eines Co-Diffusionsprozesses
CN107452830B (zh) * 2016-05-31 2019-07-26 比亚迪股份有限公司 一种背钝化太阳能电池及其制备方法
US9953839B2 (en) * 2016-08-18 2018-04-24 International Business Machines Corporation Gate-stack structure with a diffusion barrier material
JP2018041836A (ja) * 2016-09-07 2018-03-15 キヤノン株式会社 固体撮像装置およびその製造方法ならびにカメラ
CN107293614A (zh) * 2017-05-10 2017-10-24 东方环晟光伏（江苏）有限公司 电池片生成热氧化钝化层的方法
US11339475B2 (en) * 2018-11-30 2022-05-24 Applied Materials, Inc. Film stack overlay improvement
CN110246905B (zh) * 2019-05-31 2024-05-07 苏州腾晖光伏技术有限公司 一种硅太阳能电池及其制备方法
CN110148637A (zh) * 2019-06-02 2019-08-20 苏州腾晖光伏技术有限公司 一种太阳能电池减反射膜结构
CN112349792B (zh) * 2020-11-06 2023-01-31 浙江师范大学 一种单晶硅钝化接触结构及其制备方法
CN112563342A (zh) * 2020-12-04 2021-03-26 浙江晶科能源有限公司 一种光伏电池的钝化层结构、其制备方法及光伏电池
CN114765224B (zh) * 2020-12-30 2024-09-27 苏州阿特斯阳光电力科技有限公司 背接触电池及其制备方法
CN114695594B (zh) * 2020-12-30 2024-11-15 苏州阿特斯阳光电力科技有限公司 背接触电池的制备方法及背接触电池
CN112713203A (zh) * 2021-01-19 2021-04-27 天合光能股份有限公司 一种新型太阳能电池叠层钝化结构

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Publication number Priority date Publication date Assignee Title
JPWO2015060012A1 (ja) * 2013-10-25 2017-03-09 シャープ株式会社 光電変換素子
KR20150124791A (ko) * 2014-04-29 2015-11-06 엘지전자 주식회사 반도체 화합물 태양 전지
KR101929443B1 (ko) 2014-04-29 2019-03-14 엘지전자 주식회사 반도체 화합물 태양 전지

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Publication number Publication date
CN102834930A (zh) 2012-12-19
DE112011101134T5 (de) 2013-01-10
WO2011126660A2 (en) 2011-10-13
TW201143125A (en) 2011-12-01
WO2011126660A3 (en) 2012-01-05
US20110240114A1 (en) 2011-10-06

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