JPWO2015060012A1 - 光電変換素子 - Google Patents
光電変換素子 Download PDFInfo
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- JPWO2015060012A1 JPWO2015060012A1 JP2015543752A JP2015543752A JPWO2015060012A1 JP WO2015060012 A1 JPWO2015060012 A1 JP WO2015060012A1 JP 2015543752 A JP2015543752 A JP 2015543752A JP 2015543752 A JP2015543752 A JP 2015543752A JP WO2015060012 A1 JPWO2015060012 A1 JP WO2015060012A1
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- 238000006243 chemical reaction Methods 0.000 title claims abstract description 300
- 239000010409 thin film Substances 0.000 claims abstract description 474
- 239000000758 substrate Substances 0.000 claims abstract description 343
- 229910021417 amorphous silicon Inorganic materials 0.000 claims abstract description 117
- 239000000203 mixture Substances 0.000 claims description 71
- 239000004065 semiconductor Substances 0.000 claims description 47
- 125000004433 nitrogen atom Chemical group N* 0.000 claims description 26
- 125000004429 atom Chemical group 0.000 claims description 24
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 12
- 230000003287 optical effect Effects 0.000 claims description 11
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 10
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 claims description 5
- 229910052732 germanium Inorganic materials 0.000 claims description 4
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 4
- 229910021421 monocrystalline silicon Inorganic materials 0.000 abstract description 248
- 229910004205 SiNX Inorganic materials 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 102
- 238000000034 method Methods 0.000 description 73
- 238000009792 diffusion process Methods 0.000 description 72
- 239000007789 gas Substances 0.000 description 72
- 239000010408 film Substances 0.000 description 64
- 238000002161 passivation Methods 0.000 description 43
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 37
- 238000010586 diagram Methods 0.000 description 33
- 238000004519 manufacturing process Methods 0.000 description 33
- 238000010248 power generation Methods 0.000 description 32
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 28
- 239000011247 coating layer Substances 0.000 description 28
- 239000012071 phase Substances 0.000 description 24
- 229910021419 crystalline silicon Inorganic materials 0.000 description 22
- 239000000463 material Substances 0.000 description 19
- 238000009826 distribution Methods 0.000 description 16
- 238000002834 transmittance Methods 0.000 description 16
- 239000000969 carrier Substances 0.000 description 15
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 15
- 238000005530 etching Methods 0.000 description 14
- 239000012535 impurity Substances 0.000 description 14
- 229910052751 metal Inorganic materials 0.000 description 14
- 239000002184 metal Substances 0.000 description 14
- 229910017817 a-Ge Inorganic materials 0.000 description 13
- 239000013078 crystal Substances 0.000 description 13
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 12
- 229910052710 silicon Inorganic materials 0.000 description 12
- 239000010703 silicon Substances 0.000 description 11
- 238000010521 absorption reaction Methods 0.000 description 10
- 229910052782 aluminium Inorganic materials 0.000 description 10
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 10
- 229910052709 silver Inorganic materials 0.000 description 10
- 238000000206 photolithography Methods 0.000 description 9
- 230000000694 effects Effects 0.000 description 8
- 238000005468 ion implantation Methods 0.000 description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 7
- 238000003491 array Methods 0.000 description 6
- 230000007423 decrease Effects 0.000 description 6
- 229910021424 microcrystalline silicon Inorganic materials 0.000 description 6
- -1 silicon oxide nitride Chemical class 0.000 description 6
- 238000001312 dry etching Methods 0.000 description 5
- 230000005611 electricity Effects 0.000 description 5
- 229910052757 nitrogen Inorganic materials 0.000 description 5
- 229910052814 silicon oxide Inorganic materials 0.000 description 5
- 230000003213 activating effect Effects 0.000 description 4
- 229910052796 boron Inorganic materials 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 150000002500 ions Chemical class 0.000 description 4
- 229910052698 phosphorus Inorganic materials 0.000 description 4
- 238000005215 recombination Methods 0.000 description 4
- 230000006798 recombination Effects 0.000 description 4
- 239000007790 solid phase Substances 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- 239000012808 vapor phase Substances 0.000 description 4
- 238000001039 wet etching Methods 0.000 description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 3
- 229910052774 Proactinium Inorganic materials 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 239000002019 doping agent Substances 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- 125000004430 oxygen atom Chemical group O* 0.000 description 3
- 238000000059 patterning Methods 0.000 description 3
- 239000011574 phosphorus Substances 0.000 description 3
- 238000002310 reflectometry Methods 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- 229910052785 arsenic Inorganic materials 0.000 description 2
- 238000000231 atomic layer deposition Methods 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- 238000010030 laminating Methods 0.000 description 2
- 230000031700 light absorption Effects 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- 125000004437 phosphorous atom Chemical group 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- HMDDXIMCDZRSNE-UHFFFAOYSA-N [C].[Si] Chemical compound [C].[Si] HMDDXIMCDZRSNE-UHFFFAOYSA-N 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- ZOCHARZZJNPSEU-UHFFFAOYSA-N diboron Chemical compound B#B ZOCHARZZJNPSEU-UHFFFAOYSA-N 0.000 description 1
- 229910000078 germane Inorganic materials 0.000 description 1
- QUZPNFFHZPRKJD-UHFFFAOYSA-N germane Chemical compound [GeH4] QUZPNFFHZPRKJD-UHFFFAOYSA-N 0.000 description 1
- 229910052986 germanium hydride Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 238000001782 photodegradation Methods 0.000 description 1
- 230000001443 photoexcitation Effects 0.000 description 1
- 229910021426 porous silicon Inorganic materials 0.000 description 1
- 238000000682 scanning probe acoustic microscopy Methods 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 1
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Abstract
Description
図1は、この発明の実施の形態1による光電変換素子の構成を示す断面図である。図1を参照して、この発明の実施の形態1による光電変換素子100は、n型単結晶シリコン基板1と、非晶質薄膜2と、i型非晶質薄膜11〜1m,21〜2m−1(mは2以上の整数)と、p型非晶質薄膜31〜3mと、n型非晶質薄膜41〜4m−1と、電極51〜5m,61〜6m−1とを備える。
図10は、実施の形態2による光電変換素子の構成を示す断面図である。図10を参照して、実施の形態2による光電変換素子200は、図1に示す光電変換素子100のi型非晶質薄膜11〜1mを削除したものであり、その他は、光電変換素子100と同じである。
図13は、実施の形態3による光電変換素子の構成を示す断面図である。図13を参照して、実施の形態3による光電変換素子300は、図1に示す光電変換素子100のi型非晶質薄膜21〜2m−1を削除したものであり、その他は、光電変換素子100と同じである。
図16は、実施の形態4による光電変換素子の構成を示す断面図である。図16を参照して、実施の形態4による光電変換素子400は、図1に示す光電変換素子100のi型非晶質薄膜11〜1m,21〜2m−1を削除したものであり、その他は、光電変換素子100と同じである。
図19は、実施の形態5による光電変換素子の構成を示す断面図である。図19を参照して、実施の形態5による光電変換素子500は、n型単結晶シリコン基板501と、非晶質薄膜2と、電極3,5と、絶縁層4とを備える。
図24は、実施の形態6による光電変換素子の構成を示す断面図である。図24を参照して、実施の形態6による光電変換素子600は、図19に示す光電変換素子500の非晶質薄膜2を非晶質薄膜602に代え、電極3を電極603に代えたものであり、その他は、光電変換素子500と同じである。
図25は、実施の形態7による光電変換素子の構成を示す断面図である。図25を参照して、実施の形態7による光電変換素子700は、図19に示す光電変換素子500のn型単結晶シリコン基板501をn型単結晶シリコン基板701に代え、絶縁膜4を非晶質薄膜702,703に代え、電極5を電極704に代えたものであり、その他は、光電変換素子500と同じである。
図30は、実施の形態8による光電変換素子の構成を示す断面図である。図30を参照して、実施の形態8による光電変換素子800は、図24に示す光電変換素子600のn型単結晶シリコン基板501をn型単結晶シリコン基板701に代え、絶縁膜4を非晶質薄膜703,801,802に代え、電極5を電極804に代えたものであり、その他は、光電変換素子600と同じである。
図31は、実施の形態9による光電変換素子の構成を示す断面図である。図31を参照して、実施の形態9による光電変換素子900は、図25に示す光電変換素子700の非晶質薄膜2を非晶質薄膜602に代え、電極3を電極603に代えたものであり、その他は、光電変換素子700と同じである。
図32は、この実施の形態による光電変換素子を備える光電変換モジュールの構成を示す概略図である。図32を参照して、光電変換モジュール1000は、複数の光電変換素子1001と、カバー1002と、出力端子1003,1004とを備える。
図33は、この実施の形態による光電変換素子を備える太陽光発電システムの構成を示す概略図である。
図35は、この実施の形態による光電変換素子を備える太陽光発電システムの構成を示す概略図である。
その受けた交流電力の電圧レベルを変換して系統連携へ供給する。
Claims (5)
- 半導体基板の光入射側の表面に接して前記半導体基板上に設けられた非晶質薄膜を備え、
前記非晶質薄膜は、非晶質シリコン薄膜、非晶質シリコンゲルマニウム薄膜および非晶質ゲルマニウム薄膜のいずれかの光学的バンドギャップよりも大きい光学的バンドギャップに前記非晶質薄膜の光学的バンドギャップを設定するための所望の原子を含み、
前記半導体基板側と反対側の端部における前記所望の原子の組成比は、前記半導体基板側の端部における前記所望の原子の組成比よりも大きい、光電変換素子。 - 前記所望の原子の組成比は、前記半導体基板側から前記半導体基板と反対側へ向かって階段状に増加する、請求項1に記載の光電変換素子。
- 前記非晶質薄膜は、
前記半導体基板の光入射側の表面に接して前記半導体基板上に設けられた非晶質シリコン薄膜と、
前記非晶質シリコン薄膜に接して前記非晶質シリコン薄膜上に設けられた窒化シリコン薄膜とを含む、請求項2に記載の光電変換素子。 - 前記窒化シリコン薄膜における窒素原子の組成比は、0.78以上1.03以下の範囲である、請求項3に記載の光電変換素子。
- 前記非晶質シリコン薄膜は、水素化非晶質シリコン薄膜である、請求項3または請求項4に記載の光電変換素子。
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