CN102834930A - 在扩散p型区域上方形成负电荷钝化层的方法 - Google Patents

在扩散p型区域上方形成负电荷钝化层的方法 Download PDF

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Publication number
CN102834930A
CN102834930A CN2011800181035A CN201180018103A CN102834930A CN 102834930 A CN102834930 A CN 102834930A CN 2011800181035 A CN2011800181035 A CN 2011800181035A CN 201180018103 A CN201180018103 A CN 201180018103A CN 102834930 A CN102834930 A CN 102834930A
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ground floor
substrate
silicon
solar cell
layer
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Chinese (zh)
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迈克尔·P·斯图尔特
穆库·阿格瓦
罗西特·米沙拉
希曼特·芒格卡
蒂莫西·W·韦德曼
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Applied Materials Inc
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Applied Materials Inc
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/30—Coatings
    • H10F77/306—Coatings for devices having potential barriers
    • H10F77/311—Coatings for devices having potential barriers for photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells

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  • Photovoltaic Devices (AREA)
  • Formation Of Insulating Films (AREA)
CN2011800181035A 2010-03-30 2011-03-10 在扩散p型区域上方形成负电荷钝化层的方法 Pending CN102834930A (zh)

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US31914110P 2010-03-30 2010-03-30
US61/319,141 2010-03-30
PCT/US2011/027914 WO2011126660A2 (en) 2010-03-30 2011-03-10 Method of forming a negatively charged passivation layer over a diffused p-type region

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CN102834930A true CN102834930A (zh) 2012-12-19

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US (1) US20110240114A1 (enExample)
JP (1) JP2013524510A (enExample)
CN (1) CN102834930A (enExample)
DE (1) DE112011101134T5 (enExample)
TW (1) TW201143125A (enExample)
WO (1) WO2011126660A2 (enExample)

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CN103746009A (zh) * 2014-01-23 2014-04-23 通用光伏能源(烟台)有限公司 一种太阳能电池的钝化层及其制备工艺
CN104037245A (zh) * 2014-07-01 2014-09-10 中国科学院宁波材料技术与工程研究所 具有带负电荷抗反射层的太阳电池及其制法
CN104037243A (zh) * 2013-03-05 2014-09-10 Lg电子株式会社 太阳能电池
CN104362240A (zh) * 2014-10-31 2015-02-18 广东德力光电有限公司 一种LED芯片的Al2O3/SiON钝化层结构及其生长方法
CN107293614A (zh) * 2017-05-10 2017-10-24 东方环晟光伏（江苏）有限公司 电池片生成热氧化钝化层的方法
CN107452830A (zh) * 2016-05-31 2017-12-08 比亚迪股份有限公司 一种背钝化太阳能电池及其制备方法
CN110148637A (zh) * 2019-06-02 2019-08-20 苏州腾晖光伏技术有限公司 一种太阳能电池减反射膜结构
CN110246905A (zh) * 2019-05-31 2019-09-17 苏州腾晖光伏技术有限公司 一种硅太阳能电池及其制备方法
CN112563342A (zh) * 2020-12-04 2021-03-26 浙江晶科能源有限公司 一种光伏电池的钝化层结构、其制备方法及光伏电池
CN113056807A (zh) * 2018-11-30 2021-06-29 应用材料公司 用于三维与非(3d nand)应用的膜堆叠覆盖改进

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CN103578904B (zh) * 2012-07-18 2016-05-25 中微半导体设备(上海)有限公司 一种用于多腔室等离子处理装置的减少颗粒污染的方法
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US9559222B2 (en) * 2013-08-14 2017-01-31 Arizona Board Of Regents On Behalf Of Arizona State University Method and tool to reverse the charges in anti-reflection films used for solar cell applications
US20160268462A1 (en) * 2013-10-25 2016-09-15 Sharp Kabushiki Kaisha Photoelectric conversion element
JP2016539514A (ja) * 2013-11-04 2016-12-15 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 酸化物−ケイ素スタックのための付着性の改善
WO2015130261A1 (en) * 2014-02-25 2015-09-03 Empire Technology Development Llc Silicon chip with refractive index gradient for optical communication
KR101929443B1 (ko) * 2014-04-29 2019-03-14 엘지전자 주식회사 반도체 화합물 태양 전지
CN104064623B (zh) * 2014-05-27 2017-03-29 中国科学院电工研究所 一种提升太阳电池转换效率的后处理方法
KR101541252B1 (ko) * 2014-10-13 2015-08-04 한양대학교 에리카산학협력단 태양 전지 및 그 제조 방법
US9443865B2 (en) 2014-12-18 2016-09-13 Sandisk Technologies Llc Fabricating 3D NAND memory having monolithic crystalline silicon vertical NAND channel
DE102015226516B4 (de) * 2015-12-22 2018-02-22 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung eingetragener Verein Verfahren zur Dotierung von Halbleitersubstraten mittels eines Co-Diffusionsprozesses
US9953839B2 (en) * 2016-08-18 2018-04-24 International Business Machines Corporation Gate-stack structure with a diffusion barrier material
JP2018041836A (ja) * 2016-09-07 2018-03-15 キヤノン株式会社 固体撮像装置およびその製造方法ならびにカメラ
CN112349792B (zh) * 2020-11-06 2023-01-31 浙江师范大学 一种单晶硅钝化接触结构及其制备方法
CN114765224B (zh) * 2020-12-30 2024-09-27 苏州阿特斯阳光电力科技有限公司 背接触电池及其制备方法
CN114695594B (zh) * 2020-12-30 2024-11-15 苏州阿特斯阳光电力科技有限公司 背接触电池的制备方法及背接触电池
CN112713203A (zh) * 2021-01-19 2021-04-27 天合光能股份有限公司 一种新型太阳能电池叠层钝化结构

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Cited By (17)

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Publication number Priority date Publication date Assignee Title
CN103050553B (zh) * 2012-12-29 2015-06-24 中国科学院沈阳科学仪器股份有限公司 一种双面钝化晶硅太阳能电池及其制备方法
CN103050553A (zh) * 2012-12-29 2013-04-17 中国科学院沈阳科学仪器股份有限公司 一种双面钝化晶硅太阳能电池及其制备方法
CN104037243A (zh) * 2013-03-05 2014-09-10 Lg电子株式会社 太阳能电池
CN104037243B (zh) * 2013-03-05 2016-11-02 Lg电子株式会社 太阳能电池
CN103746009A (zh) * 2014-01-23 2014-04-23 通用光伏能源(烟台)有限公司 一种太阳能电池的钝化层及其制备工艺
CN104037245A (zh) * 2014-07-01 2014-09-10 中国科学院宁波材料技术与工程研究所 具有带负电荷抗反射层的太阳电池及其制法
CN104037245B (zh) * 2014-07-01 2017-11-10 中国科学院宁波材料技术与工程研究所 具有带负电荷抗反射层的太阳电池及其制法
CN104362240A (zh) * 2014-10-31 2015-02-18 广东德力光电有限公司 一种LED芯片的Al2O3/SiON钝化层结构及其生长方法
CN104362240B (zh) * 2014-10-31 2017-10-20 广东德力光电有限公司 一种LED芯片的Al2O3/SiON钝化层结构及其生长方法
CN107452830A (zh) * 2016-05-31 2017-12-08 比亚迪股份有限公司 一种背钝化太阳能电池及其制备方法
CN107293614A (zh) * 2017-05-10 2017-10-24 东方环晟光伏（江苏）有限公司 电池片生成热氧化钝化层的方法
CN113056807A (zh) * 2018-11-30 2021-06-29 应用材料公司 用于三维与非(3d nand)应用的膜堆叠覆盖改进
CN113056807B (zh) * 2018-11-30 2024-03-22 应用材料公司 用于三维与非(3d nand)应用的膜堆叠覆盖改进
CN110246905A (zh) * 2019-05-31 2019-09-17 苏州腾晖光伏技术有限公司 一种硅太阳能电池及其制备方法
CN110246905B (zh) * 2019-05-31 2024-05-07 苏州腾晖光伏技术有限公司 一种硅太阳能电池及其制备方法
CN110148637A (zh) * 2019-06-02 2019-08-20 苏州腾晖光伏技术有限公司 一种太阳能电池减反射膜结构
CN112563342A (zh) * 2020-12-04 2021-03-26 浙江晶科能源有限公司 一种光伏电池的钝化层结构、其制备方法及光伏电池

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JP2013524510A (ja) 2013-06-17
DE112011101134T5 (de) 2013-01-10
WO2011126660A2 (en) 2011-10-13
TW201143125A (en) 2011-12-01
WO2011126660A3 (en) 2012-01-05
US20110240114A1 (en) 2011-10-06

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Application publication date: 20121219