TW201143125A - Method of forming a negatively charged passivation layer over a diffused p-type region - Google Patents
Method of forming a negatively charged passivation layer over a diffused p-type region Download PDFInfo
- Publication number
- TW201143125A TW201143125A TW100108561A TW100108561A TW201143125A TW 201143125 A TW201143125 A TW 201143125A TW 100108561 A TW100108561 A TW 100108561A TW 100108561 A TW100108561 A TW 100108561A TW 201143125 A TW201143125 A TW 201143125A
- Authority
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- Taiwan
- Prior art keywords
- layer
- substrate
- solar cell
- gas
- plasma
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims abstract description 156
- 238000002161 passivation Methods 0.000 title claims abstract description 84
- 239000000758 substrate Substances 0.000 claims abstract description 208
- 230000008569 process Effects 0.000 claims description 115
- 238000012545 processing Methods 0.000 claims description 81
- 239000007789 gas Substances 0.000 claims description 79
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 32
- 239000000203 mixture Substances 0.000 claims description 31
- 229910052760 oxygen Inorganic materials 0.000 claims description 26
- 239000001301 oxygen Substances 0.000 claims description 26
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 25
- DIOQZVSQGTUSAI-UHFFFAOYSA-N decane Chemical compound CCCCCCCCCC DIOQZVSQGTUSAI-UHFFFAOYSA-N 0.000 claims description 16
- 238000000746 purification Methods 0.000 claims description 16
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 claims description 16
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims description 15
- 229910052757 nitrogen Inorganic materials 0.000 claims description 15
- 238000000151 deposition Methods 0.000 claims description 14
- 239000011737 fluorine Substances 0.000 claims description 14
- 229910052731 fluorine Inorganic materials 0.000 claims description 14
- 229910052732 germanium Inorganic materials 0.000 claims description 14
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 14
- 239000001257 hydrogen Substances 0.000 claims description 14
- 229910052739 hydrogen Inorganic materials 0.000 claims description 14
- 239000000460 chlorine Substances 0.000 claims description 13
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 11
- 230000003647 oxidation Effects 0.000 claims description 11
- 238000007254 oxidation reaction Methods 0.000 claims description 11
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims description 10
- 229910052707 ruthenium Inorganic materials 0.000 claims description 10
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 claims description 8
- 229910052801 chlorine Inorganic materials 0.000 claims description 7
- 229910052746 lanthanum Inorganic materials 0.000 claims description 7
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 claims description 6
- 229910020776 SixNy Inorganic materials 0.000 claims description 5
- 229910020781 SixOy Inorganic materials 0.000 claims description 5
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 4
- 239000001307 helium Substances 0.000 claims description 4
- 229910052734 helium Inorganic materials 0.000 claims description 4
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims description 4
- 239000004575 stone Substances 0.000 claims description 4
- 229910052715 tantalum Inorganic materials 0.000 claims description 4
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 4
- 229910000831 Steel Inorganic materials 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- NFFIWVVINABMKP-UHFFFAOYSA-N methylidynetantalum Chemical compound [Ta]#C NFFIWVVINABMKP-UHFFFAOYSA-N 0.000 claims description 3
- 239000010955 niobium Substances 0.000 claims description 3
- 229910052758 niobium Inorganic materials 0.000 claims description 3
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 claims description 3
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 3
- 239000010959 steel Substances 0.000 claims description 3
- 229910003468 tantalcarbide Inorganic materials 0.000 claims description 3
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 2
- 229910052736 halogen Inorganic materials 0.000 claims 2
- 150000002367 halogens Chemical class 0.000 claims 2
- 229910052684 Cerium Inorganic materials 0.000 claims 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims 1
- CKUAXEQHGKSLHN-UHFFFAOYSA-N [C].[N] Chemical compound [C].[N] CKUAXEQHGKSLHN-UHFFFAOYSA-N 0.000 claims 1
- LRSYPTQGLVXIBF-UHFFFAOYSA-N [C].[Sr] Chemical compound [C].[Sr] LRSYPTQGLVXIBF-UHFFFAOYSA-N 0.000 claims 1
- CFJRGWXELQQLSA-UHFFFAOYSA-N azanylidyneniobium Chemical compound [Nb]#N CFJRGWXELQQLSA-UHFFFAOYSA-N 0.000 claims 1
- 229910052797 bismuth Inorganic materials 0.000 claims 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 claims 1
- 229910000416 bismuth oxide Inorganic materials 0.000 claims 1
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 claims 1
- 229910000420 cerium oxide Inorganic materials 0.000 claims 1
- 230000008878 coupling Effects 0.000 claims 1
- 238000010168 coupling process Methods 0.000 claims 1
- 238000005859 coupling reaction Methods 0.000 claims 1
- 230000006378 damage Effects 0.000 claims 1
- TYIXMATWDRGMPF-UHFFFAOYSA-N dibismuth;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Bi+3].[Bi+3] TYIXMATWDRGMPF-UHFFFAOYSA-N 0.000 claims 1
- HTXDPTMKBJXEOW-UHFFFAOYSA-N dioxoiridium Chemical compound O=[Ir]=O HTXDPTMKBJXEOW-UHFFFAOYSA-N 0.000 claims 1
- 238000002309 gasification Methods 0.000 claims 1
- 229910000457 iridium oxide Inorganic materials 0.000 claims 1
- 238000005121 nitriding Methods 0.000 claims 1
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 claims 1
- YHBDIEWMOMLKOO-UHFFFAOYSA-I pentachloroniobium Chemical compound Cl[Nb](Cl)(Cl)(Cl)Cl YHBDIEWMOMLKOO-UHFFFAOYSA-I 0.000 claims 1
- 230000009257 reactivity Effects 0.000 claims 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims 1
- 239000000126 substance Substances 0.000 abstract description 8
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 abstract description 6
- 229910052796 boron Inorganic materials 0.000 abstract description 5
- 229910052710 silicon Inorganic materials 0.000 abstract description 3
- 239000010703 silicon Substances 0.000 abstract description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 210000004027 cell Anatomy 0.000 description 75
- 239000010408 film Substances 0.000 description 27
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 20
- 239000002243 precursor Substances 0.000 description 19
- 230000015572 biosynthetic process Effects 0.000 description 18
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 16
- 238000005215 recombination Methods 0.000 description 14
- 230000006798 recombination Effects 0.000 description 14
- 238000004140 cleaning Methods 0.000 description 10
- 239000000463 material Substances 0.000 description 9
- 239000006117 anti-reflective coating Substances 0.000 description 8
- 230000000694 effects Effects 0.000 description 8
- GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical compound [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 description 7
- 230000008021 deposition Effects 0.000 description 7
- 238000010438 heat treatment Methods 0.000 description 7
- 238000012546 transfer Methods 0.000 description 7
- 229910021529 ammonia Inorganic materials 0.000 description 6
- 238000005108 dry cleaning Methods 0.000 description 5
- 239000011521 glass Substances 0.000 description 5
- 230000003287 optical effect Effects 0.000 description 5
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 5
- 238000005240 physical vapour deposition Methods 0.000 description 5
- 125000004429 atom Chemical group 0.000 description 4
- 230000008901 benefit Effects 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 230000005684 electric field Effects 0.000 description 4
- 230000005611 electricity Effects 0.000 description 4
- 150000002431 hydrogen Chemical class 0.000 description 4
- MWUXSHHQAYIFBG-UHFFFAOYSA-N nitrogen oxide Inorganic materials O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 description 4
- 229910052727 yttrium Inorganic materials 0.000 description 4
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 4
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- KTSFMFGEAAANTF-UHFFFAOYSA-N [Cu].[Se].[Se].[In] Chemical compound [Cu].[Se].[Se].[In] KTSFMFGEAAANTF-UHFFFAOYSA-N 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 3
- 239000012159 carrier gas Substances 0.000 description 3
- 238000001816 cooling Methods 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 150000002430 hydrocarbons Chemical class 0.000 description 3
- QKCGXXHCELUCKW-UHFFFAOYSA-N n-[4-[4-(dinaphthalen-2-ylamino)phenyl]phenyl]-n-naphthalen-2-ylnaphthalen-2-amine Chemical compound C1=CC=CC2=CC(N(C=3C=CC(=CC=3)C=3C=CC(=CC=3)N(C=3C=C4C=CC=CC4=CC=3)C=3C=C4C=CC=CC4=CC=3)C3=CC4=CC=CC=C4C=C3)=CC=C21 QKCGXXHCELUCKW-UHFFFAOYSA-N 0.000 description 3
- 230000000704 physical effect Effects 0.000 description 3
- RYHBNJHYFVUHQT-UHFFFAOYSA-N 1,4-Dioxane Chemical compound C1COCCO1 RYHBNJHYFVUHQT-UHFFFAOYSA-N 0.000 description 2
- WUPHOULIZUERAE-UHFFFAOYSA-N 3-(oxolan-2-yl)propanoic acid Chemical compound OC(=O)CCC1CCCO1 WUPHOULIZUERAE-UHFFFAOYSA-N 0.000 description 2
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- YZCKVEUIGOORGS-UHFFFAOYSA-N Hydrogen atom Chemical compound [H] YZCKVEUIGOORGS-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 230000003667 anti-reflective effect Effects 0.000 description 2
- QCLQZCOGUCNIOC-UHFFFAOYSA-N azanylidynelanthanum Chemical compound [La]#N QCLQZCOGUCNIOC-UHFFFAOYSA-N 0.000 description 2
- 229910052980 cadmium sulfide Inorganic materials 0.000 description 2
- 239000002800 charge carrier Substances 0.000 description 2
- 229910052681 coesite Inorganic materials 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 229910052906 cristobalite Inorganic materials 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000005137 deposition process Methods 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- GAURFLBIDLSLQU-UHFFFAOYSA-N diethoxy(methyl)silicon Chemical compound CCO[Si](C)OCC GAURFLBIDLSLQU-UHFFFAOYSA-N 0.000 description 2
- 239000003085 diluting agent Substances 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 229910052735 hafnium Inorganic materials 0.000 description 2
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 2
- 229910000449 hafnium oxide Inorganic materials 0.000 description 2
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000001272 nitrous oxide Substances 0.000 description 2
- HMMGMWAXVFQUOA-UHFFFAOYSA-N octamethylcyclotetrasiloxane Chemical compound C[Si]1(C)O[Si](C)(C)O[Si](C)(C)O[Si](C)(C)O1 HMMGMWAXVFQUOA-UHFFFAOYSA-N 0.000 description 2
- 238000009832 plasma treatment Methods 0.000 description 2
- 229910052682 stishovite Inorganic materials 0.000 description 2
- 239000000725 suspension Substances 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 229910052905 tridymite Inorganic materials 0.000 description 2
- HFVIYAZBVIGNAN-UHFFFAOYSA-N 1,1-dibromodecane Chemical compound CCCCCCCCCC(Br)Br HFVIYAZBVIGNAN-UHFFFAOYSA-N 0.000 description 1
- BGJSXRVXTHVRSN-UHFFFAOYSA-N 1,3,5-trioxane Chemical compound C1OCOCO1 BGJSXRVXTHVRSN-UHFFFAOYSA-N 0.000 description 1
- RHMXXKKWQFXVDM-UHFFFAOYSA-J Br[Sb](Br)(Br)Br Chemical compound Br[Sb](Br)(Br)Br RHMXXKKWQFXVDM-UHFFFAOYSA-J 0.000 description 1
- 239000004215 Carbon black (E152) Substances 0.000 description 1
- KZBUYRJDOAKODT-UHFFFAOYSA-N Chlorine Chemical compound ClCl KZBUYRJDOAKODT-UHFFFAOYSA-N 0.000 description 1
- 241001559589 Cullen Species 0.000 description 1
- 108091006149 Electron carriers Proteins 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 1
- 206010035148 Plague Diseases 0.000 description 1
- 206010036790 Productive cough Diseases 0.000 description 1
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 1
- 241000607479 Yersinia pestis Species 0.000 description 1
- QYKAZSRBQNSJFY-UHFFFAOYSA-L [F-].[F-].[Ce+2] Chemical compound [F-].[F-].[Ce+2] QYKAZSRBQNSJFY-UHFFFAOYSA-L 0.000 description 1
- OSLGUGPHJWPLED-UHFFFAOYSA-N [O].[O-][N+]#N Chemical compound [O].[O-][N+]#N OSLGUGPHJWPLED-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- BCZWPKDRLPGFFZ-UHFFFAOYSA-N azanylidynecerium Chemical compound [Ce]#N BCZWPKDRLPGFFZ-UHFFFAOYSA-N 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 210000000746 body region Anatomy 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- QCCDYNYSHILRDG-UHFFFAOYSA-K cerium(3+);trifluoride Chemical compound [F-].[F-].[F-].[Ce+3] QCCDYNYSHILRDG-UHFFFAOYSA-K 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005660 chlorination reaction Methods 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000000839 emulsion Substances 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 125000001153 fluoro group Chemical group F* 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 210000004692 intercellular junction Anatomy 0.000 description 1
- -1 lanthanum fluoride hydride Chemical compound 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- VYIRVGYSUZPNLF-UHFFFAOYSA-N n-(tert-butylamino)silyl-2-methylpropan-2-amine Chemical compound CC(C)(C)N[SiH2]NC(C)(C)C VYIRVGYSUZPNLF-UHFFFAOYSA-N 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- RUDFQVOCFDJEEF-UHFFFAOYSA-N oxygen(2-);yttrium(3+) Chemical class [O-2].[O-2].[O-2].[Y+3].[Y+3] RUDFQVOCFDJEEF-UHFFFAOYSA-N 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000010405 reoxidation reaction Methods 0.000 description 1
- 230000008439 repair process Effects 0.000 description 1
- 229910001925 ruthenium oxide Inorganic materials 0.000 description 1
- WOCIAKWEIIZHES-UHFFFAOYSA-N ruthenium(iv) oxide Chemical compound O=[Ru]=O WOCIAKWEIIZHES-UHFFFAOYSA-N 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 229910021647 smectite Inorganic materials 0.000 description 1
- 239000000779 smoke Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 210000003802 sputum Anatomy 0.000 description 1
- 208000024794 sputum Diseases 0.000 description 1
- 230000000153 supplemental effect Effects 0.000 description 1
- 230000001360 synchronised effect Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 150000003648 triterpenes Chemical class 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/30—Coatings
- H10F77/306—Coatings for devices having potential barriers
- H10F77/311—Coatings for devices having potential barriers for photovoltaic cells
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F10/00—Individual photovoltaic cells, e.g. solar cells
- H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
- H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
Landscapes
- Photovoltaic Devices (AREA)
- Formation Of Insulating Films (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US31914110P | 2010-03-30 | 2010-03-30 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW201143125A true TW201143125A (en) | 2011-12-01 |
Family
ID=44708209
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW100108561A TW201143125A (en) | 2010-03-30 | 2011-03-14 | Method of forming a negatively charged passivation layer over a diffused p-type region |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US20110240114A1 (enExample) |
| JP (1) | JP2013524510A (enExample) |
| CN (1) | CN102834930A (enExample) |
| DE (1) | DE112011101134T5 (enExample) |
| TW (1) | TW201143125A (enExample) |
| WO (1) | WO2011126660A2 (enExample) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI474488B (zh) * | 2012-09-21 | 2015-02-21 | Ind Tech Res Inst | 太陽能電池 |
| TWI851621B (zh) * | 2018-11-30 | 2024-08-11 | 美商應用材料股份有限公司 | 在基板上形成膜層的方法 |
Families Citing this family (33)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8183081B2 (en) * | 2008-07-16 | 2012-05-22 | Applied Materials, Inc. | Hybrid heterojunction solar cell fabrication using a metal layer mask |
| EP2359410A4 (en) | 2008-12-10 | 2014-09-24 | Applied Materials Inc | IMPROVED VISIBILITY SYSTEM FOR ALIGNMENT OF SCREEN PRINT PATTERNS |
| US9202960B2 (en) * | 2010-03-30 | 2015-12-01 | Sunpower Corporation | Leakage pathway layer for solar cell |
| CN104094418A (zh) * | 2012-02-17 | 2014-10-08 | 应用材料公司 | 硅基太阳能电池的钝化薄膜堆叠 |
| DE102012101456A1 (de) * | 2012-02-23 | 2013-08-29 | Schott Solar Ag | Verfahren zum Herstellen einer Solarzelle |
| CN102623558B (zh) * | 2012-03-27 | 2014-07-16 | 山东力诺太阳能电力股份有限公司 | 酸法后制绒无死层发射极的制备工艺 |
| CN103578904B (zh) * | 2012-07-18 | 2016-05-25 | 中微半导体设备(上海)有限公司 | 一种用于多腔室等离子处理装置的减少颗粒污染的方法 |
| EP2701204B1 (en) * | 2012-08-24 | 2021-02-24 | Industrial Technology Research Institute | Solar cell module |
| CN103050553B (zh) * | 2012-12-29 | 2015-06-24 | 中国科学院沈阳科学仪器股份有限公司 | 一种双面钝化晶硅太阳能电池及其制备方法 |
| KR101631450B1 (ko) * | 2013-03-05 | 2016-06-17 | 엘지전자 주식회사 | 태양 전지 |
| US9559222B2 (en) * | 2013-08-14 | 2017-01-31 | Arizona Board Of Regents On Behalf Of Arizona State University | Method and tool to reverse the charges in anti-reflection films used for solar cell applications |
| US20160268462A1 (en) * | 2013-10-25 | 2016-09-15 | Sharp Kabushiki Kaisha | Photoelectric conversion element |
| JP2016539514A (ja) * | 2013-11-04 | 2016-12-15 | アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ | 酸化物−ケイ素スタックのための付着性の改善 |
| CN103746009A (zh) * | 2014-01-23 | 2014-04-23 | 通用光伏能源(烟台)有限公司 | 一种太阳能电池的钝化层及其制备工艺 |
| WO2015130261A1 (en) * | 2014-02-25 | 2015-09-03 | Empire Technology Development Llc | Silicon chip with refractive index gradient for optical communication |
| KR101929443B1 (ko) * | 2014-04-29 | 2019-03-14 | 엘지전자 주식회사 | 반도체 화합물 태양 전지 |
| CN104064623B (zh) * | 2014-05-27 | 2017-03-29 | 中国科学院电工研究所 | 一种提升太阳电池转换效率的后处理方法 |
| CN104037245B (zh) * | 2014-07-01 | 2017-11-10 | 中国科学院宁波材料技术与工程研究所 | 具有带负电荷抗反射层的太阳电池及其制法 |
| KR101541252B1 (ko) * | 2014-10-13 | 2015-08-04 | 한양대학교 에리카산학협력단 | 태양 전지 및 그 제조 방법 |
| CN104362240B (zh) * | 2014-10-31 | 2017-10-20 | 广东德力光电有限公司 | 一种LED芯片的Al2O3/SiON钝化层结构及其生长方法 |
| US9443865B2 (en) | 2014-12-18 | 2016-09-13 | Sandisk Technologies Llc | Fabricating 3D NAND memory having monolithic crystalline silicon vertical NAND channel |
| DE102015226516B4 (de) * | 2015-12-22 | 2018-02-22 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung eingetragener Verein | Verfahren zur Dotierung von Halbleitersubstraten mittels eines Co-Diffusionsprozesses |
| CN107452830B (zh) * | 2016-05-31 | 2019-07-26 | 比亚迪股份有限公司 | 一种背钝化太阳能电池及其制备方法 |
| US9953839B2 (en) * | 2016-08-18 | 2018-04-24 | International Business Machines Corporation | Gate-stack structure with a diffusion barrier material |
| JP2018041836A (ja) * | 2016-09-07 | 2018-03-15 | キヤノン株式会社 | 固体撮像装置およびその製造方法ならびにカメラ |
| CN107293614A (zh) * | 2017-05-10 | 2017-10-24 | 东方环晟光伏（江苏）有限公司 | 电池片生成热氧化钝化层的方法 |
| CN110246905B (zh) * | 2019-05-31 | 2024-05-07 | 苏州腾晖光伏技术有限公司 | 一种硅太阳能电池及其制备方法 |
| CN110148637A (zh) * | 2019-06-02 | 2019-08-20 | 苏州腾晖光伏技术有限公司 | 一种太阳能电池减反射膜结构 |
| CN112349792B (zh) * | 2020-11-06 | 2023-01-31 | 浙江师范大学 | 一种单晶硅钝化接触结构及其制备方法 |
| CN112563342A (zh) * | 2020-12-04 | 2021-03-26 | 浙江晶科能源有限公司 | 一种光伏电池的钝化层结构、其制备方法及光伏电池 |
| CN114765224B (zh) * | 2020-12-30 | 2024-09-27 | 苏州阿特斯阳光电力科技有限公司 | 背接触电池及其制备方法 |
| CN114695594B (zh) * | 2020-12-30 | 2024-11-15 | 苏州阿特斯阳光电力科技有限公司 | 背接触电池的制备方法及背接触电池 |
| CN112713203A (zh) * | 2021-01-19 | 2021-04-27 | 天合光能股份有限公司 | 一种新型太阳能电池叠层钝化结构 |
Family Cites Families (24)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5788778A (en) | 1996-09-16 | 1998-08-04 | Applied Komatsu Technology, Inc. | Deposition chamber cleaning technique using a high power remote excitation source |
| US5873781A (en) * | 1996-11-14 | 1999-02-23 | Bally Gaming International, Inc. | Gaming machine having truly random results |
| US6024044A (en) | 1997-10-09 | 2000-02-15 | Applied Komatsu Technology, Inc. | Dual frequency excitation of plasma for film deposition |
| US6477980B1 (en) | 2000-01-20 | 2002-11-12 | Applied Materials, Inc. | Flexibly suspended gas distribution manifold for plasma chamber |
| US20020182385A1 (en) * | 2001-05-29 | 2002-12-05 | Rensselaer Polytechnic Institute | Atomic layer passivation |
| US6825133B2 (en) * | 2003-01-22 | 2004-11-30 | Taiwan Semiconductor Manufacturing Company, Ltd. | Use of fluorine implantation to form a charge balanced nitrided gate dielectric layer |
| JP2004193350A (ja) * | 2002-12-11 | 2004-07-08 | Sharp Corp | 太陽電池セルおよびその製造方法 |
| US7659475B2 (en) * | 2003-06-20 | 2010-02-09 | Imec | Method for backside surface passivation of solar cells and solar cells with such passivation |
| US20050181535A1 (en) * | 2004-02-17 | 2005-08-18 | Yun Sun J. | Method of fabricating passivation layer for organic devices |
| US8083853B2 (en) | 2004-05-12 | 2011-12-27 | Applied Materials, Inc. | Plasma uniformity control by gas diffuser hole design |
| KR20060007325A (ko) * | 2004-07-19 | 2006-01-24 | 삼성전자주식회사 | 플라즈마 유도 원자층 증착 기술을 이용한 유전막 형성 방법 |
| US7429410B2 (en) | 2004-09-20 | 2008-09-30 | Applied Materials, Inc. | Diffuser gravity support |
| US7432175B2 (en) * | 2005-01-07 | 2008-10-07 | Huffaker Diana L | Quantum dots nucleation layer of lattice mismatched epitaxy |
| US7554031B2 (en) * | 2005-03-03 | 2009-06-30 | Sunpower Corporation | Preventing harmful polarization of solar cells |
| JP2006332510A (ja) * | 2005-05-30 | 2006-12-07 | Kyocera Corp | 太陽電池素子の製造方法 |
| US20060286774A1 (en) * | 2005-06-21 | 2006-12-21 | Applied Materials. Inc. | Method for forming silicon-containing materials during a photoexcitation deposition process |
| JP5347228B2 (ja) * | 2007-03-05 | 2013-11-20 | 日本電気株式会社 | 電界効果トランジスタ |
| EP2135292A2 (en) * | 2007-03-16 | 2009-12-23 | BP Corporation North America Inc. | Solar cells |
| DE102007054384A1 (de) * | 2007-11-14 | 2009-05-20 | Institut Für Solarenergieforschung Gmbh | Verfahren zum Herstellen einer Solarzelle mit einer oberflächenpassivierenden Dielektrikumdoppelschicht und entsprechende Solarzelle |
| TW200929575A (en) * | 2007-12-28 | 2009-07-01 | Ind Tech Res Inst | A passivation layer structure of the solar cell and the method of the fabricating |
| AU2008348838A1 (en) * | 2008-01-23 | 2009-07-30 | Solvay Fluor Gmbh | Process for the manufacture of solar cells |
| KR20120083400A (ko) * | 2009-09-18 | 2012-07-25 | 신에쓰 가가꾸 고교 가부시끼가이샤 | 태양전지, 그 제조방법 및 태양전지 모듈 |
| US8603900B2 (en) * | 2009-10-27 | 2013-12-10 | Varian Semiconductor Equipment Associates, Inc. | Reducing surface recombination and enhancing light trapping in solar cells |
| US8008208B2 (en) * | 2009-12-07 | 2011-08-30 | Applied Materials, Inc. | Method of cleaning and forming a negatively charged passivation layer over a doped region |
-
2011
- 2011-03-10 JP JP2013502606A patent/JP2013524510A/ja active Pending
- 2011-03-10 WO PCT/US2011/027914 patent/WO2011126660A2/en not_active Ceased
- 2011-03-10 CN CN2011800181035A patent/CN102834930A/zh active Pending
- 2011-03-10 DE DE112011101134T patent/DE112011101134T5/de not_active Withdrawn
- 2011-03-14 US US13/047,665 patent/US20110240114A1/en not_active Abandoned
- 2011-03-14 TW TW100108561A patent/TW201143125A/zh unknown
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI474488B (zh) * | 2012-09-21 | 2015-02-21 | Ind Tech Res Inst | 太陽能電池 |
| TWI851621B (zh) * | 2018-11-30 | 2024-08-11 | 美商應用材料股份有限公司 | 在基板上形成膜層的方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2013524510A (ja) | 2013-06-17 |
| CN102834930A (zh) | 2012-12-19 |
| DE112011101134T5 (de) | 2013-01-10 |
| WO2011126660A2 (en) | 2011-10-13 |
| WO2011126660A3 (en) | 2012-01-05 |
| US20110240114A1 (en) | 2011-10-06 |
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