TW201143125A - Method of forming a negatively charged passivation layer over a diffused p-type region - Google Patents

Method of forming a negatively charged passivation layer over a diffused p-type region Download PDF

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Publication number
TW201143125A
TW201143125A TW100108561A TW100108561A TW201143125A TW 201143125 A TW201143125 A TW 201143125A TW 100108561 A TW100108561 A TW 100108561A TW 100108561 A TW100108561 A TW 100108561A TW 201143125 A TW201143125 A TW 201143125A
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TW
Taiwan
Prior art keywords
layer
substrate
solar cell
gas
plasma
Prior art date
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TW100108561A
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English (en)
Chinese (zh)
Inventor
Michael P Stewart
Mukul Agrawal
Rohit Mishra
Hemant P Mungekar
Timothy W Weidman
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Applied Materials Inc
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Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of TW201143125A publication Critical patent/TW201143125A/zh

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/30—Coatings
    • H10F77/306—Coatings for devices having potential barriers
    • H10F77/311—Coatings for devices having potential barriers for photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells

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  • Photovoltaic Devices (AREA)
  • Formation Of Insulating Films (AREA)
TW100108561A 2010-03-30 2011-03-14 Method of forming a negatively charged passivation layer over a diffused p-type region TW201143125A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US31914110P 2010-03-30 2010-03-30

Publications (1)

Publication Number Publication Date
TW201143125A true TW201143125A (en) 2011-12-01

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TW100108561A TW201143125A (en) 2010-03-30 2011-03-14 Method of forming a negatively charged passivation layer over a diffused p-type region

Country Status (6)

Country Link
US (1) US20110240114A1 (enExample)
JP (1) JP2013524510A (enExample)
CN (1) CN102834930A (enExample)
DE (1) DE112011101134T5 (enExample)
TW (1) TW201143125A (enExample)
WO (1) WO2011126660A2 (enExample)

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TWI851621B (zh) * 2018-11-30 2024-08-11 美商應用材料股份有限公司 在基板上形成膜層的方法

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CN104362240B (zh) * 2014-10-31 2017-10-20 广东德力光电有限公司 一种LED芯片的Al2O3/SiON钝化层结构及其生长方法
US9443865B2 (en) 2014-12-18 2016-09-13 Sandisk Technologies Llc Fabricating 3D NAND memory having monolithic crystalline silicon vertical NAND channel
DE102015226516B4 (de) * 2015-12-22 2018-02-22 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung eingetragener Verein Verfahren zur Dotierung von Halbleitersubstraten mittels eines Co-Diffusionsprozesses
CN107452830B (zh) * 2016-05-31 2019-07-26 比亚迪股份有限公司 一种背钝化太阳能电池及其制备方法
US9953839B2 (en) * 2016-08-18 2018-04-24 International Business Machines Corporation Gate-stack structure with a diffusion barrier material
JP2018041836A (ja) * 2016-09-07 2018-03-15 キヤノン株式会社 固体撮像装置およびその製造方法ならびにカメラ
CN107293614A (zh) * 2017-05-10 2017-10-24 东方环晟光伏（江苏）有限公司 电池片生成热氧化钝化层的方法
CN110246905B (zh) * 2019-05-31 2024-05-07 苏州腾晖光伏技术有限公司 一种硅太阳能电池及其制备方法
CN110148637A (zh) * 2019-06-02 2019-08-20 苏州腾晖光伏技术有限公司 一种太阳能电池减反射膜结构
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CN112349792B (zh) * 2020-11-06 2023-01-31 浙江师范大学 一种单晶硅钝化接触结构及其制备方法
CN112563342A (zh) * 2020-12-04 2021-03-26 浙江晶科能源有限公司 一种光伏电池的钝化层结构、其制备方法及光伏电池
CN114765224B (zh) * 2020-12-30 2024-09-27 苏州阿特斯阳光电力科技有限公司 背接触电池及其制备方法
CN114695594B (zh) * 2020-12-30 2024-11-15 苏州阿特斯阳光电力科技有限公司 背接触电池的制备方法及背接触电池
CN112713203A (zh) * 2021-01-19 2021-04-27 天合光能股份有限公司 一种新型太阳能电池叠层钝化结构

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TWI851621B (zh) * 2018-11-30 2024-08-11 美商應用材料股份有限公司 在基板上形成膜層的方法

Also Published As

Publication number Publication date
US20110240114A1 (en) 2011-10-06
WO2011126660A3 (en) 2012-01-05
CN102834930A (zh) 2012-12-19
JP2013524510A (ja) 2013-06-17
DE112011101134T5 (de) 2013-01-10
WO2011126660A2 (en) 2011-10-13

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