JP2013522654A - 反射防止ハードマスク組成物及びそれを用いたパターン化材料を調製する方法。 - Google Patents

反射防止ハードマスク組成物及びそれを用いたパターン化材料を調製する方法。 Download PDF

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Publication number
JP2013522654A
JP2013522654A JP2012554984A JP2012554984A JP2013522654A JP 2013522654 A JP2013522654 A JP 2013522654A JP 2012554984 A JP2012554984 A JP 2012554984A JP 2012554984 A JP2012554984 A JP 2012554984A JP 2013522654 A JP2013522654 A JP 2013522654A
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JP
Japan
Prior art keywords
composition
hard mask
layer
radiation
polymer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2012554984A
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English (en)
Japanese (ja)
Other versions
JP2013522654A5 (https=
Inventor
バーンズ、ショーン、ディー
メデイロス、デービッド、アール
ファイファー、ダーク
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
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International Business Machines Corp
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Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of JP2013522654A publication Critical patent/JP2013522654A/ja
Publication of JP2013522654A5 publication Critical patent/JP2013522654A5/ja
Pending legal-status Critical Current

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes
    • H10P76/2043—Photolithographic processes using an anti-reflective coating
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G03F7/0752—Silicon-containing compounds in non photosensitive layers or as additives, e.g. for dry lithography
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/094—Multilayer resist systems, e.g. planarising layers

Landscapes

  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Structural Engineering (AREA)
  • Architecture (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Medicinal Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Materials For Photolithography (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Laminated Bodies (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Silicon Polymers (AREA)
  • Polymers With Sulfur, Phosphorus Or Metals In The Main Chain (AREA)
JP2012554984A 2010-02-24 2010-10-22 反射防止ハードマスク組成物及びそれを用いたパターン化材料を調製する方法。 Pending JP2013522654A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/711,748 2010-02-24
US12/711,748 US8323871B2 (en) 2010-02-24 2010-02-24 Antireflective hardmask composition and a method of preparing a patterned material using same
PCT/US2010/053652 WO2011106040A1 (en) 2010-02-24 2010-10-22 Antireflective hardmask composition and a method of preparing a patterned material using same

Publications (2)

Publication Number Publication Date
JP2013522654A true JP2013522654A (ja) 2013-06-13
JP2013522654A5 JP2013522654A5 (https=) 2014-08-14

Family

ID=44476797

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2012554984A Pending JP2013522654A (ja) 2010-02-24 2010-10-22 反射防止ハードマスク組成物及びそれを用いたパターン化材料を調製する方法。

Country Status (6)

Country Link
US (1) US8323871B2 (https=)
JP (1) JP2013522654A (https=)
CN (1) CN102770807B (https=)
DE (1) DE112010005304B4 (https=)
GB (1) GB2489645A (https=)
WO (1) WO2011106040A1 (https=)

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US8647809B2 (en) * 2011-07-07 2014-02-11 Brewer Science Inc. Metal-oxide films from small molecules for lithographic applications
JP5756134B2 (ja) 2013-01-08 2015-07-29 信越化学工業株式会社 金属酸化物含有膜形成用組成物及びパターン形成方法
US9460934B2 (en) * 2013-03-15 2016-10-04 Globalfoundries Inc. Wet strip process for an antireflective coating layer
US10007184B2 (en) * 2016-09-01 2018-06-26 Rohm And Haas Electronic Materials Llc Silicon-containing underlayers
CN116496500B (zh) * 2022-01-18 2026-02-24 上海艾深斯科技有限公司 用于KrF显微光刻法的单层组合物中组合的硬掩模和ARC

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Publication number Priority date Publication date Assignee Title
US20040009672A1 (en) * 2002-07-11 2004-01-15 Promos Technologies, Inc. Method for etching a trench through an anti-reflective coating
US20070015083A1 (en) * 2005-07-14 2007-01-18 International Business Machines Corporation Antireflective composition and process of making a lithographic structure
JP2009126940A (ja) * 2007-11-22 2009-06-11 Shin Etsu Chem Co Ltd 金属酸化物含有膜形成用組成物、金属酸化物含有膜、金属酸化物含有膜形成基板及びこれを用いたパターン形成方法

Also Published As

Publication number Publication date
CN102770807A (zh) 2012-11-07
DE112010005304T5 (de) 2012-12-20
WO2011106040A1 (en) 2011-09-01
GB2489645A (en) 2012-10-03
DE112010005304B4 (de) 2022-07-28
US8323871B2 (en) 2012-12-04
GB201213664D0 (en) 2012-09-12
DE112010005304T8 (de) 2013-03-14
US20110207047A1 (en) 2011-08-25
CN102770807B (zh) 2015-05-06

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