GB2489645A - Antireflective hardmask composition and a method of preparing a patterned material using same - Google Patents

Antireflective hardmask composition and a method of preparing a patterned material using same Download PDF

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Publication number
GB2489645A
GB2489645A GB1213664.4A GB201213664A GB2489645A GB 2489645 A GB2489645 A GB 2489645A GB 201213664 A GB201213664 A GB 201213664A GB 2489645 A GB2489645 A GB 2489645A
Authority
GB
United Kingdom
Prior art keywords
hardmask composition
patterned material
antireflective hardmask
preparing
same
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
GB1213664.4A
Other languages
English (en)
Other versions
GB201213664D0 (en
Inventor
Sean Burns
David Medeiros
Dirk Pfeiffer
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of GB201213664D0 publication Critical patent/GB201213664D0/en
Publication of GB2489645A publication Critical patent/GB2489645A/en
Withdrawn legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes
    • H10P76/2043—Photolithographic processes using an anti-reflective coating
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G03F7/0752—Silicon-containing compounds in non photosensitive layers or as additives, e.g. for dry lithography
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/094—Multilayer resist systems, e.g. planarising layers

Landscapes

  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Structural Engineering (AREA)
  • Architecture (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Medicinal Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Materials For Photolithography (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Laminated Bodies (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Silicon Polymers (AREA)
  • Polymers With Sulfur, Phosphorus Or Metals In The Main Chain (AREA)
GB1213664.4A 2010-02-24 2010-10-22 Antireflective hardmask composition and a method of preparing a patterned material using same Withdrawn GB2489645A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US12/711,748 US8323871B2 (en) 2010-02-24 2010-02-24 Antireflective hardmask composition and a method of preparing a patterned material using same
PCT/US2010/053652 WO2011106040A1 (en) 2010-02-24 2010-10-22 Antireflective hardmask composition and a method of preparing a patterned material using same

Publications (2)

Publication Number Publication Date
GB201213664D0 GB201213664D0 (en) 2012-09-12
GB2489645A true GB2489645A (en) 2012-10-03

Family

ID=44476797

Family Applications (1)

Application Number Title Priority Date Filing Date
GB1213664.4A Withdrawn GB2489645A (en) 2010-02-24 2010-10-22 Antireflective hardmask composition and a method of preparing a patterned material using same

Country Status (6)

Country Link
US (1) US8323871B2 (https=)
JP (1) JP2013522654A (https=)
CN (1) CN102770807B (https=)
DE (1) DE112010005304B4 (https=)
GB (1) GB2489645A (https=)
WO (1) WO2011106040A1 (https=)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8647809B2 (en) * 2011-07-07 2014-02-11 Brewer Science Inc. Metal-oxide films from small molecules for lithographic applications
JP5756134B2 (ja) 2013-01-08 2015-07-29 信越化学工業株式会社 金属酸化物含有膜形成用組成物及びパターン形成方法
US9460934B2 (en) * 2013-03-15 2016-10-04 Globalfoundries Inc. Wet strip process for an antireflective coating layer
US10007184B2 (en) * 2016-09-01 2018-06-26 Rohm And Haas Electronic Materials Llc Silicon-containing underlayers
CN116496500B (zh) * 2022-01-18 2026-02-24 上海艾深斯科技有限公司 用于KrF显微光刻法的单层组合物中组合的硬掩模和ARC

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US4273420A (en) * 1978-07-07 1981-06-16 Hitachi, Ltd. Liquid crystal display device
US4719146A (en) * 1984-10-27 1988-01-12 Rohm Gmbh Scratch resistant antireflective coatings for synthetic resins
US5580819A (en) * 1995-03-22 1996-12-03 Ppg Industries, Inc. Coating composition, process for producing antireflective coatings, and coated articles
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US6013582A (en) * 1997-12-08 2000-01-11 Applied Materials, Inc. Method for etching silicon oxynitride and inorganic antireflection coatings
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US20030209515A1 (en) * 1999-06-11 2003-11-13 Shipley Company, L.L.C. Antireflective hard mask compositions
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US20040058275A1 (en) * 2002-06-25 2004-03-25 Brewer Science, Inc. Wet-developable anti-reflective compositions
US6743726B2 (en) * 2002-07-11 2004-06-01 Promos Technologies, Inc. Method for etching a trench through an anti-reflective coating
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US20050112382A1 (en) * 2003-11-24 2005-05-26 Allen Robert D. Molecular photoresists containing nonpolymeric silsesquioxanes
US20070015083A1 (en) * 2005-07-14 2007-01-18 International Business Machines Corporation Antireflective composition and process of making a lithographic structure
US20080187731A1 (en) * 2003-09-12 2008-08-07 International Business Machines Corporation Techniques for Patterning Features in Semiconductor Devices
US20090029284A1 (en) * 2005-06-24 2009-01-29 Tokyo Ohka Kogyo Co., Ltd. Pattern coating material and pattern forming method
US20090176165A1 (en) * 2007-12-24 2009-07-09 Cheon Hwan Sung Polymer composition, hardmask composition having antireflective properties, and associated methods

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US7033735B2 (en) * 2003-11-17 2006-04-25 Taiwan Semiconductor Manufacturing Co., Ltd. Water soluble negative tone photoresist
US8153344B2 (en) * 2004-07-16 2012-04-10 Ppg Industries Ohio, Inc. Methods for producing photosensitive microparticles, aqueous compositions thereof and articles prepared therewith
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Patent Citations (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4273420A (en) * 1978-07-07 1981-06-16 Hitachi, Ltd. Liquid crystal display device
US4719146A (en) * 1984-10-27 1988-01-12 Rohm Gmbh Scratch resistant antireflective coatings for synthetic resins
US5668237A (en) * 1992-06-10 1997-09-16 E.I. Dupont De Nemours And Company Silicon and zirconium based lacquer, its use as a substrate coating and substrates thus obtained
US6669995B1 (en) * 1994-10-12 2003-12-30 Linda Insalaco Method of treating an anti-reflective coating on a substrate
US5580819A (en) * 1995-03-22 1996-12-03 Ppg Industries, Inc. Coating composition, process for producing antireflective coatings, and coated articles
US6013582A (en) * 1997-12-08 2000-01-11 Applied Materials, Inc. Method for etching silicon oxynitride and inorganic antireflection coatings
US20030209515A1 (en) * 1999-06-11 2003-11-13 Shipley Company, L.L.C. Antireflective hard mask compositions
US6420084B1 (en) * 2000-06-23 2002-07-16 International Business Machines Corporation Mask-making using resist having SIO bond-containing polymer
US20040058275A1 (en) * 2002-06-25 2004-03-25 Brewer Science, Inc. Wet-developable anti-reflective compositions
US6743726B2 (en) * 2002-07-11 2004-06-01 Promos Technologies, Inc. Method for etching a trench through an anti-reflective coating
US20050042538A1 (en) * 2003-08-22 2005-02-24 International Business Machines Corporation Antireflective hardmask and uses thereof
US20080187731A1 (en) * 2003-09-12 2008-08-07 International Business Machines Corporation Techniques for Patterning Features in Semiconductor Devices
US20050112382A1 (en) * 2003-11-24 2005-05-26 Allen Robert D. Molecular photoresists containing nonpolymeric silsesquioxanes
US20090029284A1 (en) * 2005-06-24 2009-01-29 Tokyo Ohka Kogyo Co., Ltd. Pattern coating material and pattern forming method
US20070015083A1 (en) * 2005-07-14 2007-01-18 International Business Machines Corporation Antireflective composition and process of making a lithographic structure
US20090176165A1 (en) * 2007-12-24 2009-07-09 Cheon Hwan Sung Polymer composition, hardmask composition having antireflective properties, and associated methods

Also Published As

Publication number Publication date
CN102770807A (zh) 2012-11-07
DE112010005304T5 (de) 2012-12-20
WO2011106040A1 (en) 2011-09-01
DE112010005304B4 (de) 2022-07-28
US8323871B2 (en) 2012-12-04
GB201213664D0 (en) 2012-09-12
DE112010005304T8 (de) 2013-03-14
US20110207047A1 (en) 2011-08-25
CN102770807B (zh) 2015-05-06
JP2013522654A (ja) 2013-06-13

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WAP Application withdrawn, taken to be withdrawn or refused ** after publication under section 16(1)