DE112010005304B4 - Reflexionsmindernde Hartmaskenzusammensetzung und Verfahren zur Herstellung eines strukturierten Materials damit - Google Patents

Reflexionsmindernde Hartmaskenzusammensetzung und Verfahren zur Herstellung eines strukturierten Materials damit Download PDF

Info

Publication number
DE112010005304B4
DE112010005304B4 DE112010005304.9T DE112010005304T DE112010005304B4 DE 112010005304 B4 DE112010005304 B4 DE 112010005304B4 DE 112010005304 T DE112010005304 T DE 112010005304T DE 112010005304 B4 DE112010005304 B4 DE 112010005304B4
Authority
DE
Germany
Prior art keywords
composition
layer
moieties
radiation
alkyl
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE112010005304.9T
Other languages
German (de)
English (en)
Other versions
DE112010005304T5 (de
DE112010005304T8 (de
Inventor
Sean D. Burns
David R. Medeiros
Dirk Pfeiffer
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
GlobalFoundries US Inc
Original Assignee
GlobalFoundries US Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by GlobalFoundries US Inc filed Critical GlobalFoundries US Inc
Publication of DE112010005304T5 publication Critical patent/DE112010005304T5/de
Application granted granted Critical
Publication of DE112010005304T8 publication Critical patent/DE112010005304T8/de
Publication of DE112010005304B4 publication Critical patent/DE112010005304B4/de
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes
    • H10P76/2043—Photolithographic processes using an anti-reflective coating
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G03F7/0752—Silicon-containing compounds in non photosensitive layers or as additives, e.g. for dry lithography
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/094—Multilayer resist systems, e.g. planarising layers

Landscapes

  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Structural Engineering (AREA)
  • Architecture (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Medicinal Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Materials For Photolithography (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Laminated Bodies (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Silicon Polymers (AREA)
  • Polymers With Sulfur, Phosphorus Or Metals In The Main Chain (AREA)
DE112010005304.9T 2010-02-24 2010-10-22 Reflexionsmindernde Hartmaskenzusammensetzung und Verfahren zur Herstellung eines strukturierten Materials damit Active DE112010005304B4 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/711,748 2010-02-24
US12/711,748 US8323871B2 (en) 2010-02-24 2010-02-24 Antireflective hardmask composition and a method of preparing a patterned material using same
PCT/US2010/053652 WO2011106040A1 (en) 2010-02-24 2010-10-22 Antireflective hardmask composition and a method of preparing a patterned material using same

Publications (3)

Publication Number Publication Date
DE112010005304T5 DE112010005304T5 (de) 2012-12-20
DE112010005304T8 DE112010005304T8 (de) 2013-03-14
DE112010005304B4 true DE112010005304B4 (de) 2022-07-28

Family

ID=44476797

Family Applications (1)

Application Number Title Priority Date Filing Date
DE112010005304.9T Active DE112010005304B4 (de) 2010-02-24 2010-10-22 Reflexionsmindernde Hartmaskenzusammensetzung und Verfahren zur Herstellung eines strukturierten Materials damit

Country Status (6)

Country Link
US (1) US8323871B2 (https=)
JP (1) JP2013522654A (https=)
CN (1) CN102770807B (https=)
DE (1) DE112010005304B4 (https=)
GB (1) GB2489645A (https=)
WO (1) WO2011106040A1 (https=)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8647809B2 (en) * 2011-07-07 2014-02-11 Brewer Science Inc. Metal-oxide films from small molecules for lithographic applications
JP5756134B2 (ja) 2013-01-08 2015-07-29 信越化学工業株式会社 金属酸化物含有膜形成用組成物及びパターン形成方法
US9460934B2 (en) * 2013-03-15 2016-10-04 Globalfoundries Inc. Wet strip process for an antireflective coating layer
US10007184B2 (en) * 2016-09-01 2018-06-26 Rohm And Haas Electronic Materials Llc Silicon-containing underlayers
CN116496500B (zh) * 2022-01-18 2026-02-24 上海艾深斯科技有限公司 用于KrF显微光刻法的单层组合物中组合的硬掩模和ARC

Citations (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4371605A (en) 1980-12-09 1983-02-01 E. I. Du Pont De Nemours And Company Photopolymerizable compositions containing N-hydroxyamide and N-hydroxyimide sulfonates
CA1204547A (en) 1981-02-13 1986-05-13 Rudolf Kirchmayr Curable composition based on an acid-curable resin, and process for curing this resin
US4855017A (en) 1985-05-03 1989-08-08 Texas Instruments Incorporated Trench etch process for a single-wafer RIE dry etch reactor
US5362663A (en) 1992-01-09 1994-11-08 International Business Machines Corporation Method of forming double well substrate plate trench DRAM cell array
US5429710A (en) 1993-02-25 1995-07-04 Sony Corporation Dry etching method
US5562801A (en) 1994-04-28 1996-10-08 Cypress Semiconductor Corporation Method of etching an oxide layer
US5618751A (en) 1996-05-23 1997-04-08 International Business Machines Corporation Method of making single-step trenches using resist fill and recess
US5744376A (en) 1996-04-08 1998-04-28 Chartered Semiconductor Manufacturing Pte, Ltd Method of manufacturing copper interconnect with top barrier layer
US5801094A (en) 1997-02-28 1998-09-01 United Microelectronics Corporation Dual damascene process
US5821469A (en) 1996-12-18 1998-10-13 Lucent Technologies Inc. Device for securing cables in a telecommunications system
US5886102A (en) 1996-06-11 1999-03-23 Shipley Company, L.L.C. Antireflective coating compositions
US5939236A (en) 1997-02-07 1999-08-17 Shipley Company, L.L.C. Antireflective coating compositions comprising photoacid generators
US5948570A (en) 1995-05-26 1999-09-07 Lucent Technologies Inc. Process for dry lithographic etching
US6037097A (en) 1998-01-27 2000-03-14 International Business Machines Corporation E-beam application to mask making using new improved KRS resist system
US6316167B1 (en) 2000-01-10 2001-11-13 International Business Machines Corporation Tunabale vapor deposited materials as antireflective coatings, hardmasks and as combined antireflective coating/hardmasks and methods of fabrication thereof and application thereof
EP1293339A1 (en) 2001-03-16 2003-03-19 Toray Industries, Inc. Laminated polyester film
JP2003157808A (ja) 2001-11-23 2003-05-30 Shogo Tsuchida 再利用可能式電球、蛍光燈等と分離可能式回路
US6730454B2 (en) 2002-04-16 2004-05-04 International Business Machines Corporation Antireflective SiO-containing compositions for hardmask layer
JP2004158639A (ja) 2002-11-06 2004-06-03 Nec Tokin Ceramics Corp 電気二重層コンデンサ
JP2004172222A (ja) 2002-11-18 2004-06-17 Tokyo Electron Ltd 電子デバイスおよびその製造方法
US20050042538A1 (en) 2003-08-22 2005-02-24 International Business Machines Corporation Antireflective hardmask and uses thereof
US20070015083A1 (en) 2005-07-14 2007-01-18 International Business Machines Corporation Antireflective composition and process of making a lithographic structure

Family Cites Families (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2026190B (en) * 1978-07-07 1982-11-10 Hitachi Ltd Liquid crystal display device
JPS59175725A (ja) 1983-03-26 1984-10-04 Toshiba Corp 多層レジスト膜
DE3439482A1 (de) * 1984-10-27 1986-05-07 Röhm GmbH, 6100 Darmstadt Verfahren zur beschichtung von substraten mit kratzfesten, nichtreflektierenden ueberzuegen
JPH01147535A (ja) 1987-12-04 1989-06-09 Koujiyundo Kagaku Kenkyusho:Kk 多層レジスト膜
JPH01293339A (ja) 1988-05-23 1989-11-27 Tosoh Corp フォトレジスト組成物
FR2692275A1 (fr) * 1992-06-10 1993-12-17 Du Pont Nouvelle laque à base de silicium et zirconium, son emploi en tant que revêtement de substrat et les substrats ainsi obtenus.
US5691101A (en) * 1994-03-15 1997-11-25 Kabushiki Kaisha Toshiba Photosensitive composition
US6669995B1 (en) * 1994-10-12 2003-12-30 Linda Insalaco Method of treating an anti-reflective coating on a substrate
US5580819A (en) * 1995-03-22 1996-12-03 Ppg Industries, Inc. Coating composition, process for producing antireflective coatings, and coated articles
US6013582A (en) * 1997-12-08 2000-01-11 Applied Materials, Inc. Method for etching silicon oxynitride and inorganic antireflection coatings
US6890448B2 (en) * 1999-06-11 2005-05-10 Shipley Company, L.L.C. Antireflective hard mask compositions
US6420084B1 (en) * 2000-06-23 2002-07-16 International Business Machines Corporation Mask-making using resist having SIO bond-containing polymer
US6872506B2 (en) * 2002-06-25 2005-03-29 Brewer Science Inc. Wet-developable anti-reflective compositions
US6743726B2 (en) * 2002-07-11 2004-06-01 Promos Technologies, Inc. Method for etching a trench through an anti-reflective coating
WO2004027518A2 (en) * 2002-09-19 2004-04-01 Arch Specialty Chemicals, Inc. A method for the removal of an imaging layer from a semiconductor substrate stack
KR20040044368A (ko) * 2002-11-20 2004-05-28 쉬플리 캄파니, 엘.엘.씨. 다층 포토레지스트 시스템
US7030008B2 (en) * 2003-09-12 2006-04-18 International Business Machines Corporation Techniques for patterning features in semiconductor devices
US7033735B2 (en) * 2003-11-17 2006-04-25 Taiwan Semiconductor Manufacturing Co., Ltd. Water soluble negative tone photoresist
US7141692B2 (en) * 2003-11-24 2006-11-28 International Business Machines Corporation Molecular photoresists containing nonpolymeric silsesquioxanes
US8153344B2 (en) * 2004-07-16 2012-04-10 Ppg Industries Ohio, Inc. Methods for producing photosensitive microparticles, aqueous compositions thereof and articles prepared therewith
US7320855B2 (en) * 2004-11-03 2008-01-22 International Business Machines Corporation Silicon containing TARC/barrier layer
KR100682184B1 (ko) * 2004-12-28 2007-02-12 주식회사 하이닉스반도체 감광막 패턴 수축용 조성물
JP4933063B2 (ja) * 2005-06-24 2012-05-16 東京応化工業株式会社 パターン形成方法
US7585613B2 (en) * 2006-01-25 2009-09-08 Shin-Etsu Chemical Co., Ltd. Antireflection film composition, substrate, and patterning process
JP4793592B2 (ja) * 2007-11-22 2011-10-12 信越化学工業株式会社 金属酸化物含有膜形成用組成物、金属酸化物含有膜、金属酸化物含有膜形成基板及びこれを用いたパターン形成方法
KR100930673B1 (ko) * 2007-12-24 2009-12-09 제일모직주식회사 반사방지 하드마스크 조성물　및　이를 이용한재료의　패턴화 방법
JP5015891B2 (ja) * 2008-10-02 2012-08-29 信越化学工業株式会社 金属酸化物含有膜形成用組成物、金属酸化物含有膜形成基板及びパターン形成方法

Patent Citations (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4371605A (en) 1980-12-09 1983-02-01 E. I. Du Pont De Nemours And Company Photopolymerizable compositions containing N-hydroxyamide and N-hydroxyimide sulfonates
CA1204547A (en) 1981-02-13 1986-05-13 Rudolf Kirchmayr Curable composition based on an acid-curable resin, and process for curing this resin
US4855017A (en) 1985-05-03 1989-08-08 Texas Instruments Incorporated Trench etch process for a single-wafer RIE dry etch reactor
US5362663A (en) 1992-01-09 1994-11-08 International Business Machines Corporation Method of forming double well substrate plate trench DRAM cell array
US5429710A (en) 1993-02-25 1995-07-04 Sony Corporation Dry etching method
US5562801A (en) 1994-04-28 1996-10-08 Cypress Semiconductor Corporation Method of etching an oxide layer
US5948570A (en) 1995-05-26 1999-09-07 Lucent Technologies Inc. Process for dry lithographic etching
US5744376A (en) 1996-04-08 1998-04-28 Chartered Semiconductor Manufacturing Pte, Ltd Method of manufacturing copper interconnect with top barrier layer
US5618751A (en) 1996-05-23 1997-04-08 International Business Machines Corporation Method of making single-step trenches using resist fill and recess
US5886102A (en) 1996-06-11 1999-03-23 Shipley Company, L.L.C. Antireflective coating compositions
US5821469A (en) 1996-12-18 1998-10-13 Lucent Technologies Inc. Device for securing cables in a telecommunications system
US5939236A (en) 1997-02-07 1999-08-17 Shipley Company, L.L.C. Antireflective coating compositions comprising photoacid generators
US5801094A (en) 1997-02-28 1998-09-01 United Microelectronics Corporation Dual damascene process
US6037097A (en) 1998-01-27 2000-03-14 International Business Machines Corporation E-beam application to mask making using new improved KRS resist system
US6514667B2 (en) 1998-06-29 2003-02-04 International Business Machines Corporation Tunable vapor deposited materials as antireflective coatings, hardmasks and as combined antireflective coating/hardmasks and methods of fabrication thereof and applications thereof
US6316167B1 (en) 2000-01-10 2001-11-13 International Business Machines Corporation Tunabale vapor deposited materials as antireflective coatings, hardmasks and as combined antireflective coating/hardmasks and methods of fabrication thereof and application thereof
EP1293339A1 (en) 2001-03-16 2003-03-19 Toray Industries, Inc. Laminated polyester film
JP2003157808A (ja) 2001-11-23 2003-05-30 Shogo Tsuchida 再利用可能式電球、蛍光燈等と分離可能式回路
US6730454B2 (en) 2002-04-16 2004-05-04 International Business Machines Corporation Antireflective SiO-containing compositions for hardmask layer
JP2004158639A (ja) 2002-11-06 2004-06-03 Nec Tokin Ceramics Corp 電気二重層コンデンサ
JP2004172222A (ja) 2002-11-18 2004-06-17 Tokyo Electron Ltd 電子デバイスおよびその製造方法
US20050042538A1 (en) 2003-08-22 2005-02-24 International Business Machines Corporation Antireflective hardmask and uses thereof
US20070015083A1 (en) 2005-07-14 2007-01-18 International Business Machines Corporation Antireflective composition and process of making a lithographic structure

Also Published As

Publication number Publication date
CN102770807A (zh) 2012-11-07
DE112010005304T5 (de) 2012-12-20
WO2011106040A1 (en) 2011-09-01
GB2489645A (en) 2012-10-03
US8323871B2 (en) 2012-12-04
GB201213664D0 (en) 2012-09-12
DE112010005304T8 (de) 2013-03-14
US20110207047A1 (en) 2011-08-25
CN102770807B (zh) 2015-05-06
JP2013522654A (ja) 2013-06-13

Similar Documents

Publication Publication Date Title
JP4042981B2 (ja) リソグラフィ用反射防止ハードマスク組成物およびそれを用いた半導体デバイスの製造方法
EP3686672B1 (en) Process of coating a hard mask composition for pattern transfer into a silicon substrate
JP4384919B2 (ja) ハードマスク層用の反射防止ＳｉＯ含有組成物
EP2089770B1 (en) Method of creating photolithographic structures with developer-trimmed hard mask
KR100787332B1 (ko) 하드마스크용 조성물 및 이를 이용한 반도체 소자의 제조방법
EP2783389B1 (en) Structure comprising assist layers for euv lithography and method for forming it
DE112014000485B4 (de) Silicium enthaltende Antireflexbeschichtungen, die Nicht-Polymere Silsesquioxane beinhalten
US20070105363A1 (en) Antireflective Hardmask and Uses Thereof
KR100816735B1 (ko) 반사방지 하드마스크 조성물, 이를 이용한 패턴화된 재료형상의　제조방법 및 반도체 집적회로 디바이스
US7326442B2 (en) Antireflective composition and process of making a lithographic structure
DE112010005304B4 (de) Reflexionsmindernde Hartmaskenzusammensetzung und Verfahren zur Herstellung eines strukturierten Materials damit
EP4339702A1 (en) Compound for forming metal-containing film, composition for forming metal-containing film, patterning process, and semiconductor photoresist material
KR100500453B1 (ko) 이중층 레지스트막의 하부 레지스트 층의 형성방법
KR102678333B1 (ko) 반도체 포토레지스트용 조성물 및 이를 이용한 패턴 형성 방법
KR100787331B1 (ko) 하드마스크용 조성물 및 이를 이용한 반도체 소자의 제조방법
KR102821359B1 (ko) 반도체 포토레지스트용 조성물 및 이를 이용한 패턴 형성 방법
KR102959717B1 (ko) 반도체 레지스트용 조성물 및 이를 이용한 패턴 형성 방법
KR20260064285A (ko) 반도체 포토레지스트용 조성물 및 이를 이용한 패턴 형성 방법
DE102023107991A1 (de) Verfahren zur herstellung einer halbleitervorrichtung
KR20250172149A (ko) 포토레지스트 조성물 및 이를 이용하는 집적회로 소자의 제조 방법
KR20070093303A (ko) 유기실란계 화합물, 이를 포함하는 레지스트 하층막용하드마스크 조성물 및 이를 이용한 반도체 집적회로디바이스의 제조방법
KR20070106212A (ko) 하드마스크막과 포토레지스트막 계면의 혼합 방지용 조성물및 이를 이용한 반도체 소자의 제조 방법

Legal Events

Date Code Title Description
R012 Request for examination validly filed
R079 Amendment of ipc main class

Free format text: PREVIOUS MAIN CLASS: G03F0007000000

Ipc: G03F0007090000

Effective date: 20121105

R081 Change of applicant/patentee

Owner name: GLOBALFOUNDRIES U.S. INC., SANTA CLARA, US

Free format text: FORMER OWNER: INTERNATIONAL BUSINESS MACHINES CORPORATION, ARMONK, N.Y., US

Owner name: GLOBALFOUNDRIES INC., KY

Free format text: FORMER OWNER: INTERNATIONAL BUSINESS MACHINES CORPORATION, ARMONK, N.Y., US

Owner name: GLOBALFOUNDRIES US 2 LLC (N.D.GES.DES STAATES , US

Free format text: FORMER OWNER: INTERNATIONAL BUSINESS MACHINES CORPORATION, ARMONK, N.Y., US

R082 Change of representative

Representative=s name: RICHARDT PATENTANWAELTE PARTG MBB, DE

R081 Change of applicant/patentee

Owner name: GLOBALFOUNDRIES U.S. INC., SANTA CLARA, US

Free format text: FORMER OWNER: GLOBALFOUNDRIES US 2 LLC (N.D.GES.DES STAATES DELAWARE), HOPEWELL JUNCTION, N.Y., US

Owner name: GLOBALFOUNDRIES INC., KY

Free format text: FORMER OWNER: GLOBALFOUNDRIES US 2 LLC (N.D.GES.DES STAATES DELAWARE), HOPEWELL JUNCTION, N.Y., US

R082 Change of representative

Representative=s name: RICHARDT PATENTANWAELTE PARTG MBB, DE

R016 Response to examination communication
R081 Change of applicant/patentee

Owner name: GLOBALFOUNDRIES U.S. INC., SANTA CLARA, US

Free format text: FORMER OWNER: GLOBALFOUNDRIES INC., GRAND CAYMAN, KY

R082 Change of representative

Representative=s name: RICHARDT PATENTANWAELTE PARTG MBB, DE

R016 Response to examination communication
R082 Change of representative

Representative=s name: GRUENECKER PATENT- UND RECHTSANWAELTE PARTG MB, DE

R016 Response to examination communication
R018 Grant decision by examination section/examining division
R020 Patent grant now final