JP2013522654A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2013522654A5 JP2013522654A5 JP2012554984A JP2012554984A JP2013522654A5 JP 2013522654 A5 JP2013522654 A5 JP 2013522654A5 JP 2012554984 A JP2012554984 A JP 2012554984A JP 2012554984 A JP2012554984 A JP 2012554984A JP 2013522654 A5 JP2013522654 A5 JP 2013522654A5
- Authority
- JP
- Japan
- Prior art keywords
- composition
- alkyl
- layer
- radiation
- different
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000203 mixture Substances 0.000 claims 21
- 239000000463 material Substances 0.000 claims 9
- 125000000217 alkyl group Chemical group 0.000 claims 7
- 238000000034 method Methods 0.000 claims 7
- 230000005855 radiation Effects 0.000 claims 6
- 230000003667 anti-reflective effect Effects 0.000 claims 5
- 238000004132 cross linking Methods 0.000 claims 5
- 125000003545 alkoxy group Chemical group 0.000 claims 4
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 claims 4
- 239000002253 acid Substances 0.000 claims 3
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical compound C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 claims 3
- 125000001046 glycoluril group Chemical group [H]C12N(*)C(=O)N(*)C1([H])N(*)C(=O)N2* 0.000 claims 3
- -1 lanthanide rare earth metals Chemical class 0.000 claims 3
- 229920000642 polymer Polymers 0.000 claims 3
- 239000007787 solid Substances 0.000 claims 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims 2
- 229920000877 Melamine resin Polymers 0.000 claims 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 2
- 229910052799 carbon Inorganic materials 0.000 claims 2
- 239000003989 dielectric material Substances 0.000 claims 2
- 238000005530 etching Methods 0.000 claims 2
- 125000000524 functional group Chemical group 0.000 claims 2
- 229910052735 hafnium Inorganic materials 0.000 claims 2
- 229910052747 lanthanoid Inorganic materials 0.000 claims 2
- 150000007974 melamines Chemical class 0.000 claims 2
- 229910052758 niobium Inorganic materials 0.000 claims 2
- 239000003960 organic solvent Substances 0.000 claims 2
- 229910052760 oxygen Inorganic materials 0.000 claims 2
- 239000001301 oxygen Substances 0.000 claims 2
- 125000000951 phenoxy group Chemical group [H]C1=C([H])C([H])=C(O*)C([H])=C1[H] 0.000 claims 2
- 229910052761 rare earth metal Inorganic materials 0.000 claims 2
- 229910052706 scandium Inorganic materials 0.000 claims 2
- 239000000758 substrate Substances 0.000 claims 2
- 229910052715 tantalum Inorganic materials 0.000 claims 2
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 claims 2
- 229910052719 titanium Inorganic materials 0.000 claims 2
- 229910052727 yttrium Inorganic materials 0.000 claims 2
- 229910052726 zirconium Inorganic materials 0.000 claims 2
- MCVVDMSWCQUKEV-UHFFFAOYSA-N (2-nitrophenyl)methyl 4-methylbenzenesulfonate Chemical compound C1=CC(C)=CC=C1S(=O)(=O)OCC1=CC=CC=C1[N+]([O-])=O MCVVDMSWCQUKEV-UHFFFAOYSA-N 0.000 claims 1
- DLDWUFCUUXXYTB-UHFFFAOYSA-N (2-oxo-1,2-diphenylethyl) 4-methylbenzenesulfonate Chemical compound C1=CC(C)=CC=C1S(=O)(=O)OC(C=1C=CC=CC=1)C(=O)C1=CC=CC=C1 DLDWUFCUUXXYTB-UHFFFAOYSA-N 0.000 claims 1
- XGQJGMGAMHFMAO-UHFFFAOYSA-N 1,3,4,6-tetrakis(methoxymethyl)-3a,6a-dihydroimidazo[4,5-d]imidazole-2,5-dione Chemical compound COCN1C(=O)N(COC)C2C1N(COC)C(=O)N2COC XGQJGMGAMHFMAO-UHFFFAOYSA-N 0.000 claims 1
- NJQJGRGGIUNVAB-UHFFFAOYSA-N 2,4,4,6-tetrabromocyclohexa-2,5-dien-1-one Chemical group BrC1=CC(Br)(Br)C=C(Br)C1=O NJQJGRGGIUNVAB-UHFFFAOYSA-N 0.000 claims 1
- KUMMBDBTERQYCG-UHFFFAOYSA-N 2,6-bis(hydroxymethyl)-4-methylphenol Chemical compound CC1=CC(CO)=C(O)C(CO)=C1 KUMMBDBTERQYCG-UHFFFAOYSA-N 0.000 claims 1
- NXKOSHBFVWYVIH-UHFFFAOYSA-N 2-n-(butoxymethyl)-1,3,5-triazine-2,4,6-triamine Chemical compound CCCCOCNC1=NC(N)=NC(N)=N1 NXKOSHBFVWYVIH-UHFFFAOYSA-N 0.000 claims 1
- KFVIYKFKUYBKTP-UHFFFAOYSA-N 2-n-(methoxymethyl)-1,3,5-triazine-2,4,6-triamine Chemical compound COCNC1=NC(N)=NC(N)=N1 KFVIYKFKUYBKTP-UHFFFAOYSA-N 0.000 claims 1
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 claims 1
- 229930185605 Bisphenol Natural products 0.000 claims 1
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 claims 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 claims 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 claims 1
- 229910052581 Si3N4 Inorganic materials 0.000 claims 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 claims 1
- 229920003180 amino resin Polymers 0.000 claims 1
- 239000000908 ammonium hydroxide Substances 0.000 claims 1
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 claims 1
- 229910052794 bromium Inorganic materials 0.000 claims 1
- 239000000460 chlorine Substances 0.000 claims 1
- 229910052801 chlorine Inorganic materials 0.000 claims 1
- 239000004020 conductor Substances 0.000 claims 1
- 238000010894 electron beam technology Methods 0.000 claims 1
- 230000032050 esterification Effects 0.000 claims 1
- 238000005886 esterification reaction Methods 0.000 claims 1
- 239000011737 fluorine Substances 0.000 claims 1
- 229910052731 fluorine Inorganic materials 0.000 claims 1
- 229910052739 hydrogen Inorganic materials 0.000 claims 1
- 239000001257 hydrogen Substances 0.000 claims 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 claims 1
- 238000003384 imaging method Methods 0.000 claims 1
- 239000011810 insulating material Substances 0.000 claims 1
- 239000000696 magnetic material Substances 0.000 claims 1
- 229910052751 metal Inorganic materials 0.000 claims 1
- 239000002184 metal Substances 0.000 claims 1
- 125000005010 perfluoroalkyl group Chemical group 0.000 claims 1
- 238000001020 plasma etching Methods 0.000 claims 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 claims 1
- 229910052710 silicon Inorganic materials 0.000 claims 1
- 239000010703 silicon Substances 0.000 claims 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims 1
- 229910052814 silicon oxide Inorganic materials 0.000 claims 1
- 150000003460 sulfonic acids Chemical class 0.000 claims 1
- 239000011593 sulfur Substances 0.000 claims 1
- 229910052717 sulfur Inorganic materials 0.000 claims 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US12/711,748 | 2010-02-24 | ||
| US12/711,748 US8323871B2 (en) | 2010-02-24 | 2010-02-24 | Antireflective hardmask composition and a method of preparing a patterned material using same |
| PCT/US2010/053652 WO2011106040A1 (en) | 2010-02-24 | 2010-10-22 | Antireflective hardmask composition and a method of preparing a patterned material using same |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2013522654A JP2013522654A (ja) | 2013-06-13 |
| JP2013522654A5 true JP2013522654A5 (https=) | 2014-08-14 |
Family
ID=44476797
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2012554984A Pending JP2013522654A (ja) | 2010-02-24 | 2010-10-22 | 反射防止ハードマスク組成物及びそれを用いたパターン化材料を調製する方法。 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US8323871B2 (https=) |
| JP (1) | JP2013522654A (https=) |
| CN (1) | CN102770807B (https=) |
| DE (1) | DE112010005304B4 (https=) |
| GB (1) | GB2489645A (https=) |
| WO (1) | WO2011106040A1 (https=) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8647809B2 (en) * | 2011-07-07 | 2014-02-11 | Brewer Science Inc. | Metal-oxide films from small molecules for lithographic applications |
| JP5756134B2 (ja) | 2013-01-08 | 2015-07-29 | 信越化学工業株式会社 | 金属酸化物含有膜形成用組成物及びパターン形成方法 |
| US9460934B2 (en) * | 2013-03-15 | 2016-10-04 | Globalfoundries Inc. | Wet strip process for an antireflective coating layer |
| US10007184B2 (en) * | 2016-09-01 | 2018-06-26 | Rohm And Haas Electronic Materials Llc | Silicon-containing underlayers |
| CN116496500B (zh) * | 2022-01-18 | 2026-02-24 | 上海艾深斯科技有限公司 | 用于KrF显微光刻法的单层组合物中组合的硬掩模和ARC |
Family Cites Families (49)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2026190B (en) * | 1978-07-07 | 1982-11-10 | Hitachi Ltd | Liquid crystal display device |
| US4371605A (en) | 1980-12-09 | 1983-02-01 | E. I. Du Pont De Nemours And Company | Photopolymerizable compositions containing N-hydroxyamide and N-hydroxyimide sulfonates |
| DE3265701D1 (en) | 1981-02-13 | 1985-10-03 | Ciba Geigy Ag | Curable compositions containing an acid-curable resin, and process for curing them |
| JPS59175725A (ja) | 1983-03-26 | 1984-10-04 | Toshiba Corp | 多層レジスト膜 |
| DE3439482A1 (de) * | 1984-10-27 | 1986-05-07 | Röhm GmbH, 6100 Darmstadt | Verfahren zur beschichtung von substraten mit kratzfesten, nichtreflektierenden ueberzuegen |
| US4855017A (en) * | 1985-05-03 | 1989-08-08 | Texas Instruments Incorporated | Trench etch process for a single-wafer RIE dry etch reactor |
| JPH01147535A (ja) | 1987-12-04 | 1989-06-09 | Koujiyundo Kagaku Kenkyusho:Kk | 多層レジスト膜 |
| JPH01293339A (ja) | 1988-05-23 | 1989-11-27 | Tosoh Corp | フォトレジスト組成物 |
| US5250829A (en) * | 1992-01-09 | 1993-10-05 | International Business Machines Corporation | Double well substrate plate trench DRAM cell array |
| FR2692275A1 (fr) * | 1992-06-10 | 1993-12-17 | Du Pont | Nouvelle laque à base de silicium et zirconium, son emploi en tant que revêtement de substrat et les substrats ainsi obtenus. |
| JP3271359B2 (ja) * | 1993-02-25 | 2002-04-02 | ソニー株式会社 | ドライエッチング方法 |
| US5691101A (en) * | 1994-03-15 | 1997-11-25 | Kabushiki Kaisha Toshiba | Photosensitive composition |
| US5562801A (en) * | 1994-04-28 | 1996-10-08 | Cypress Semiconductor Corporation | Method of etching an oxide layer |
| US6669995B1 (en) * | 1994-10-12 | 2003-12-30 | Linda Insalaco | Method of treating an anti-reflective coating on a substrate |
| US5580819A (en) * | 1995-03-22 | 1996-12-03 | Ppg Industries, Inc. | Coating composition, process for producing antireflective coatings, and coated articles |
| US5948570A (en) * | 1995-05-26 | 1999-09-07 | Lucent Technologies Inc. | Process for dry lithographic etching |
| US5744376A (en) * | 1996-04-08 | 1998-04-28 | Chartered Semiconductor Manufacturing Pte, Ltd | Method of manufacturing copper interconnect with top barrier layer |
| US5618751A (en) * | 1996-05-23 | 1997-04-08 | International Business Machines Corporation | Method of making single-step trenches using resist fill and recess |
| US5886102A (en) * | 1996-06-11 | 1999-03-23 | Shipley Company, L.L.C. | Antireflective coating compositions |
| US5821469A (en) * | 1996-12-18 | 1998-10-13 | Lucent Technologies Inc. | Device for securing cables in a telecommunications system |
| US5939236A (en) * | 1997-02-07 | 1999-08-17 | Shipley Company, L.L.C. | Antireflective coating compositions comprising photoacid generators |
| US5801094A (en) * | 1997-02-28 | 1998-09-01 | United Microelectronics Corporation | Dual damascene process |
| US6013582A (en) * | 1997-12-08 | 2000-01-11 | Applied Materials, Inc. | Method for etching silicon oxynitride and inorganic antireflection coatings |
| US6037097A (en) * | 1998-01-27 | 2000-03-14 | International Business Machines Corporation | E-beam application to mask making using new improved KRS resist system |
| US6316167B1 (en) * | 2000-01-10 | 2001-11-13 | International Business Machines Corporation | Tunabale vapor deposited materials as antireflective coatings, hardmasks and as combined antireflective coating/hardmasks and methods of fabrication thereof and application thereof |
| US6890448B2 (en) * | 1999-06-11 | 2005-05-10 | Shipley Company, L.L.C. | Antireflective hard mask compositions |
| US6420084B1 (en) * | 2000-06-23 | 2002-07-16 | International Business Machines Corporation | Mask-making using resist having SIO bond-containing polymer |
| CN1253311C (zh) | 2001-03-16 | 2006-04-26 | 东丽株式会社 | 层压聚酯薄膜 |
| JP3696830B2 (ja) | 2001-11-23 | 2005-09-21 | 庄吾 土田 | 再利用可能式電球、蛍光燈等と分離可能式回路 |
| US6730454B2 (en) * | 2002-04-16 | 2004-05-04 | International Business Machines Corporation | Antireflective SiO-containing compositions for hardmask layer |
| US6872506B2 (en) * | 2002-06-25 | 2005-03-29 | Brewer Science Inc. | Wet-developable anti-reflective compositions |
| US6743726B2 (en) * | 2002-07-11 | 2004-06-01 | Promos Technologies, Inc. | Method for etching a trench through an anti-reflective coating |
| WO2004027518A2 (en) * | 2002-09-19 | 2004-04-01 | Arch Specialty Chemicals, Inc. | A method for the removal of an imaging layer from a semiconductor substrate stack |
| JP2004158639A (ja) | 2002-11-06 | 2004-06-03 | Nec Tokin Ceramics Corp | 電気二重層コンデンサ |
| JP2004172222A (ja) | 2002-11-18 | 2004-06-17 | Tokyo Electron Ltd | 電子デバイスおよびその製造方法 |
| KR20040044368A (ko) * | 2002-11-20 | 2004-05-28 | 쉬플리 캄파니, 엘.엘.씨. | 다층 포토레지스트 시스템 |
| US7172849B2 (en) * | 2003-08-22 | 2007-02-06 | International Business Machines Corporation | Antireflective hardmask and uses thereof |
| US7030008B2 (en) * | 2003-09-12 | 2006-04-18 | International Business Machines Corporation | Techniques for patterning features in semiconductor devices |
| US7033735B2 (en) * | 2003-11-17 | 2006-04-25 | Taiwan Semiconductor Manufacturing Co., Ltd. | Water soluble negative tone photoresist |
| US7141692B2 (en) * | 2003-11-24 | 2006-11-28 | International Business Machines Corporation | Molecular photoresists containing nonpolymeric silsesquioxanes |
| US8153344B2 (en) * | 2004-07-16 | 2012-04-10 | Ppg Industries Ohio, Inc. | Methods for producing photosensitive microparticles, aqueous compositions thereof and articles prepared therewith |
| US7320855B2 (en) * | 2004-11-03 | 2008-01-22 | International Business Machines Corporation | Silicon containing TARC/barrier layer |
| KR100682184B1 (ko) * | 2004-12-28 | 2007-02-12 | 주식회사 하이닉스반도체 | 감광막 패턴 수축용 조성물 |
| JP4933063B2 (ja) * | 2005-06-24 | 2012-05-16 | 東京応化工業株式会社 | パターン形成方法 |
| US7326442B2 (en) * | 2005-07-14 | 2008-02-05 | International Business Machines Corporation | Antireflective composition and process of making a lithographic structure |
| US7585613B2 (en) * | 2006-01-25 | 2009-09-08 | Shin-Etsu Chemical Co., Ltd. | Antireflection film composition, substrate, and patterning process |
| JP4793592B2 (ja) * | 2007-11-22 | 2011-10-12 | 信越化学工業株式会社 | 金属酸化物含有膜形成用組成物、金属酸化物含有膜、金属酸化物含有膜形成基板及びこれを用いたパターン形成方法 |
| KR100930673B1 (ko) * | 2007-12-24 | 2009-12-09 | 제일모직주식회사 | 반사방지 하드마스크 조성물 및 이를 이용한재료의 패턴화 방법 |
| JP5015891B2 (ja) * | 2008-10-02 | 2012-08-29 | 信越化学工業株式会社 | 金属酸化物含有膜形成用組成物、金属酸化物含有膜形成基板及びパターン形成方法 |
-
2010
- 2010-02-24 US US12/711,748 patent/US8323871B2/en not_active Expired - Fee Related
- 2010-10-22 CN CN201080064595.7A patent/CN102770807B/zh active Active
- 2010-10-22 GB GB1213664.4A patent/GB2489645A/en not_active Withdrawn
- 2010-10-22 DE DE112010005304.9T patent/DE112010005304B4/de active Active
- 2010-10-22 JP JP2012554984A patent/JP2013522654A/ja active Pending
- 2010-10-22 WO PCT/US2010/053652 patent/WO2011106040A1/en not_active Ceased
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP7008160B2 (ja) | 金属酸化物ナノ粒子及び有機ポリマーを含むスピンオン材料の組成物 | |
| KR101783509B1 (ko) | 금속 산화물 함유막 형성용 조성물 및 패턴 형성 방법 | |
| US8906590B2 (en) | Antireflective coating composition and process thereof | |
| CN110088072B (zh) | 新型化合物、半导体材料、以及使用了其的膜以及半导体的制造方法 | |
| TWI750917B (zh) | 有機膜形成用材料、圖案形成方法、以及聚合物 | |
| TW202041619A (zh) | 包含無機氧化物組分及經炔氧基取代之旋塗碳組分且可用作具有改良儲存壽命之硬遮罩及填充材料的旋塗組合物 | |
| TW201336857A (zh) | 含矽之表面改質劑、含有此表面改質劑之光阻下層膜形成用組成物、及圖案形成方法 | |
| JP7406590B2 (ja) | 重合体 | |
| EP3137943A1 (en) | Antireflective coating compositions and processes thereof | |
| CN1619415A (zh) | 用于旋涂抗反射涂层/硬掩膜材料的含硅组合物 | |
| TWI577699B (zh) | 含矽聚合物、含矽化合物、光阻下層膜形成用組成物及圖案形成方法 | |
| TW202136920A (zh) | 有機膜形成材料、有機膜形成方法、圖案形成方法、以及化合物 | |
| TWI870792B (zh) | 金屬氧化膜形成用組成物、圖案形成方法、及金屬氧化膜形成方法 | |
| JP2013522654A5 (https=) | ||
| KR20060116133A (ko) | 반사방지성을 갖는 하드마스크 조성물 | |
| JPWO2019208762A1 (ja) | レジスト下層膜形成用組成物、リソグラフィー用下層膜、及びパターン形成方法 | |
| KR20210132038A (ko) | 막 형성용 조성물 및 반도체 기판의 제조 방법 | |
| WO2008075860A1 (en) | High etch resistant hardmask composition having antireflective properties, method for forming patterned material layer using the hardmask composition and semiconductor integrated circuit device produced using the method | |
| KR100836675B1 (ko) | 반사방지 하드마스크 조성물, 이를 이용한 패턴화된 재료형상의 제조방법 및 반도체 집적회로 디바이스 | |
| WO2023110660A1 (en) | Thick film-forming composition and method for manufacturing cured film using the same | |
| Ouattara et al. | EUV assist layers for use in multilayer processes |