JP2013520016A5 - - Google Patents

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Publication number
JP2013520016A5
JP2013520016A5 JP2012553032A JP2012553032A JP2013520016A5 JP 2013520016 A5 JP2013520016 A5 JP 2013520016A5 JP 2012553032 A JP2012553032 A JP 2012553032A JP 2012553032 A JP2012553032 A JP 2012553032A JP 2013520016 A5 JP2013520016 A5 JP 2013520016A5
Authority
JP
Japan
Prior art keywords
well
connections
high dose
dose implant
dopant polarity
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2012553032A
Other languages
English (en)
Japanese (ja)
Other versions
JP2013520016A (ja
Filing date
Publication date
Priority claimed from US12/705,185 external-priority patent/US8227846B2/en
Application filed filed Critical
Publication of JP2013520016A publication Critical patent/JP2013520016A/ja
Publication of JP2013520016A5 publication Critical patent/JP2013520016A5/ja
Pending legal-status Critical Current

Links

JP2012553032A 2010-02-12 2011-02-11 連続ウェルデカップリングコンデンサのためのシステムおよび方法 Pending JP2013520016A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/705,185 US8227846B2 (en) 2010-02-12 2010-02-12 Systems and methods for a continuous-well decoupling capacitor
US12/705,185 2010-02-12
PCT/US2011/024522 WO2011106176A1 (en) 2010-02-12 2011-02-11 Systems and methods for a continuous-well decoupling capacitor

Publications (2)

Publication Number Publication Date
JP2013520016A JP2013520016A (ja) 2013-05-30
JP2013520016A5 true JP2013520016A5 (https=) 2014-03-13

Family

ID=43937842

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2012553032A Pending JP2013520016A (ja) 2010-02-12 2011-02-11 連続ウェルデカップリングコンデンサのためのシステムおよび方法

Country Status (6)

Country Link
US (1) US8227846B2 (https=)
EP (1) EP2534690B1 (https=)
JP (1) JP2013520016A (https=)
KR (1) KR101697720B1 (https=)
CN (1) CN102754214A (https=)
WO (1) WO2011106176A1 (https=)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9082886B2 (en) * 2011-05-12 2015-07-14 Taiwan Semiconductor Manufacturing Company, Ltd. Adding decoupling function for tap cells
US10157910B2 (en) * 2015-12-30 2018-12-18 Taiwan Semiconductor Manufacturing Company Limited Circuits and structures including tap cells and fabrication methods thereof
US10032763B2 (en) 2016-06-02 2018-07-24 Qualcomm Incorporated Bulk cross-coupled high density power supply decoupling capacitor
US10740527B2 (en) 2017-09-06 2020-08-11 Apple Inc. Semiconductor layout in FinFET technologies
US11244895B2 (en) 2020-06-01 2022-02-08 Qualcomm Incorporated Intertwined well connection and decoupling capacitor layout structure for integrated circuits
TW202604262A (zh) * 2024-03-12 2026-01-16 日商新唐科技日本股份有限公司 去耦合電容元件

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR0174313B1 (ko) * 1994-07-27 1999-02-01 스기야마 가즈히꼬 Mos 커패시터와 그 제조방법
US6239662B1 (en) * 1998-02-25 2001-05-29 Citizen Watch Co., Ltd. Mis variable capacitor and temperature-compensated oscillator using the same
JP2000223722A (ja) * 1998-02-25 2000-08-11 Citizen Watch Co Ltd Ｍｉｓ型可変容量コンデンサおよびそれを用いた温度補償型発振器
US6475838B1 (en) * 2000-03-14 2002-11-05 International Business Machines Corporation Methods for forming decoupling capacitors
US6621128B2 (en) 2001-02-28 2003-09-16 United Microelectronics Corp. Method of fabricating a MOS capacitor
JP2003297940A (ja) * 2002-03-29 2003-10-17 Kawasaki Microelectronics Kk Ｍｏｓ型可変容量素子および集積回路
US20050035410A1 (en) 2003-08-15 2005-02-17 Yee-Chia Yeo Semiconductor diode with reduced leakage
US7301217B2 (en) 2004-04-23 2007-11-27 Taiwan Semiconductor Manufacturing Co., Ltd. Decoupling capacitor design
US7825447B2 (en) * 2004-04-28 2010-11-02 Semiconductor Energy Laboratory Co., Ltd. MOS capacitor and semiconductor device
US7378705B2 (en) 2005-09-01 2008-05-27 Honeywell International, Inc. Single-poly EEPROM cell with lightly doped MOS capacitors
JP2007157892A (ja) * 2005-12-02 2007-06-21 Nec Electronics Corp 半導体集積回路およびその製造方法
JP2007299860A (ja) * 2006-04-28 2007-11-15 Nec Electronics Corp 半導体装置

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