CN102754214A - 用于连续井的去耦电容的系统和方法 - Google Patents

用于连续井的去耦电容的系统和方法 Download PDF

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Publication number
CN102754214A
CN102754214A CN2011800087480A CN201180008748A CN102754214A CN 102754214 A CN102754214 A CN 102754214A CN 2011800087480 A CN2011800087480 A CN 2011800087480A CN 201180008748 A CN201180008748 A CN 201180008748A CN 102754214 A CN102754214 A CN 102754214A
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CN
China
Prior art keywords
well
group
band
high dose
dose implant
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN2011800087480A
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English (en)
Chinese (zh)
Inventor
安德鲁·卡尔森
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Advanced Micro Devices Inc
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Advanced Micro Devices Inc
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Publication date
Application filed by Advanced Micro Devices Inc filed Critical Advanced Micro Devices Inc
Publication of CN102754214A publication Critical patent/CN102754214A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/201—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits
    • H10D84/204—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors
    • H10D84/212—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors of only capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/62—Capacitors having potential barriers
    • H10D1/66—Conductor-insulator-semiconductor capacitors, e.g. MOS capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/201—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits
    • H10D84/204—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors
    • H10D84/212—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors of only capacitors
    • H10D84/217—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors of only capacitors of only conductor-insulator-semiconductor capacitors

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  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
CN2011800087480A 2010-02-12 2011-02-11 用于连续井的去耦电容的系统和方法 Pending CN102754214A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/705,185 US8227846B2 (en) 2010-02-12 2010-02-12 Systems and methods for a continuous-well decoupling capacitor
US12/705,185 2010-02-12
PCT/US2011/024522 WO2011106176A1 (en) 2010-02-12 2011-02-11 Systems and methods for a continuous-well decoupling capacitor

Publications (1)

Publication Number Publication Date
CN102754214A true CN102754214A (zh) 2012-10-24

Family

ID=43937842

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2011800087480A Pending CN102754214A (zh) 2010-02-12 2011-02-11 用于连续井的去耦电容的系统和方法

Country Status (6)

Country Link
US (1) US8227846B2 (https=)
EP (1) EP2534690B1 (https=)
JP (1) JP2013520016A (https=)
KR (1) KR101697720B1 (https=)
CN (1) CN102754214A (https=)
WO (1) WO2011106176A1 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111066153A (zh) * 2017-09-06 2020-04-24 苹果公司 鳍式场效晶体管技术中的半导体布局

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9082886B2 (en) * 2011-05-12 2015-07-14 Taiwan Semiconductor Manufacturing Company, Ltd. Adding decoupling function for tap cells
US10157910B2 (en) * 2015-12-30 2018-12-18 Taiwan Semiconductor Manufacturing Company Limited Circuits and structures including tap cells and fabrication methods thereof
US10032763B2 (en) 2016-06-02 2018-07-24 Qualcomm Incorporated Bulk cross-coupled high density power supply decoupling capacitor
US11244895B2 (en) 2020-06-01 2022-02-08 Qualcomm Incorporated Intertwined well connection and decoupling capacitor layout structure for integrated circuits
TW202604262A (zh) * 2024-03-12 2026-01-16 日商新唐科技日本股份有限公司 去耦合電容元件

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6239662B1 (en) * 1998-02-25 2001-05-29 Citizen Watch Co., Ltd. Mis variable capacitor and temperature-compensated oscillator using the same
US20020117720A1 (en) * 2001-02-28 2002-08-29 David Lee Method of fabricating a MOS capacitor
US20070045710A1 (en) * 2005-09-01 2007-03-01 Honeywell International Inc. Single-poly EEPROM cell with lightly doped MOS capacitors
US20070126031A1 (en) * 2005-12-02 2007-06-07 Nec Electronics Corporation Semiconductor integrated circuit and method of manufacturing the same

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR0174313B1 (ko) * 1994-07-27 1999-02-01 스기야마 가즈히꼬 Mos 커패시터와 그 제조방법
JP2000223722A (ja) * 1998-02-25 2000-08-11 Citizen Watch Co Ltd Ｍｉｓ型可変容量コンデンサおよびそれを用いた温度補償型発振器
US6475838B1 (en) * 2000-03-14 2002-11-05 International Business Machines Corporation Methods for forming decoupling capacitors
JP2003297940A (ja) * 2002-03-29 2003-10-17 Kawasaki Microelectronics Kk Ｍｏｓ型可変容量素子および集積回路
US20050035410A1 (en) 2003-08-15 2005-02-17 Yee-Chia Yeo Semiconductor diode with reduced leakage
US7301217B2 (en) 2004-04-23 2007-11-27 Taiwan Semiconductor Manufacturing Co., Ltd. Decoupling capacitor design
US7825447B2 (en) * 2004-04-28 2010-11-02 Semiconductor Energy Laboratory Co., Ltd. MOS capacitor and semiconductor device
JP2007299860A (ja) * 2006-04-28 2007-11-15 Nec Electronics Corp 半導体装置

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6239662B1 (en) * 1998-02-25 2001-05-29 Citizen Watch Co., Ltd. Mis variable capacitor and temperature-compensated oscillator using the same
US20020117720A1 (en) * 2001-02-28 2002-08-29 David Lee Method of fabricating a MOS capacitor
US20070045710A1 (en) * 2005-09-01 2007-03-01 Honeywell International Inc. Single-poly EEPROM cell with lightly doped MOS capacitors
US20070126031A1 (en) * 2005-12-02 2007-06-07 Nec Electronics Corporation Semiconductor integrated circuit and method of manufacturing the same

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111066153A (zh) * 2017-09-06 2020-04-24 苹果公司 鳍式场效晶体管技术中的半导体布局
US11720734B2 (en) 2017-09-06 2023-08-08 Apple Inc. Semiconductor layout in FinFET technologies
CN111066153B (zh) * 2017-09-06 2023-12-19 苹果公司 鳍式场效晶体管技术中的半导体布局
US12450418B2 (en) 2017-09-06 2025-10-21 Apple Inc. Semiconductor layout in FinFET technologies

Also Published As

Publication number Publication date
EP2534690B1 (en) 2021-03-31
EP2534690A1 (en) 2012-12-19
KR20120121914A (ko) 2012-11-06
WO2011106176A1 (en) 2011-09-01
JP2013520016A (ja) 2013-05-30
US8227846B2 (en) 2012-07-24
US20110198677A1 (en) 2011-08-18
KR101697720B1 (ko) 2017-01-18

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Application publication date: 20121024